Y100KKM

FAST TURN-OFF THYRISTOR

Features
Interdigitated amplifying gates Fast turn-on and high di/dt Low switching losses Inductive heating Electronic welders Self-commutated inverters

Typical Applications

IT(AV) VDRM/VRRM tq ITSM I2t

4290A 4100~4800V 80~15s 44 kA 9680 103A2S

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(C) Min

VALUE UNIT Type Max 4290 2930

IT(AV)

Mean on-state current

180 half sine wave 50Hz Double side cooled,

TC=55C TC=85C

125

VDRM VRRM IDRM IRRM ITSM It VTO rT VTM dv/dt di/dt Qrr tq IGT VGT IH VGD Rth(j-c) Rth(c-h) Fm Tstg Wt Outline
2

Repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak current Surge on-state current I T for fusing coordination Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Recovery charge Circuit commutated turn-off time Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heat sink Mounting force Stored temperature Weight
2

VDRM&VRRM , tp=10ms VDSM&VRSM= VDRM&VRRM+100V VD= VDRM VR= VRRM 10ms half sine wave VR=0.6VRRM

125

4100

4800

125 125

250 44 9680 1.48 0.16 1.98 500 1200 2500 80 40 150 450 4.5 1000
2

mA kA A s*103 V m V V/s A/s C s mA V mA V

125 ITM=2500A, F=90kN VDM=0.67VDRM VDM= 67%VDRM to4000A Gate pulse tr 0.5s IGM=1.5A ITM=2000A,tp=2000s, di/dt=-60A/s,VR=50V ITM=2000A,tp=1000s, VR =50V dv/dt=30V/s ,di/dt=-20A/s VA=12V, IA=1A 125 125 125 125 125

25

0.9 20

VDM=67%VDRM At 1800 sine, double side cooled Clamping force 90 kN

125

0.3 0.005

C /W 0.0015 81 -40 2000 108 140 kN C g

KT100cT

http://www.tech-sem.com

Page 1 of 3

Y100KKM
Peak On-state Voltage Vs.Peak On-state Current Y100KKM Transient thermal impedance,C/W 5 Instantaneous on-state voltage,volts 4.5 4 3.5 3 2.5 2 1.5 1 100 TJ =125C 0.006 0.005 0.004 0.003 0.002 0.001 0 0.001 Max . junction To0.0050 Case Thermai Impedance Vs.Time

1000 10000 100000 Instantaneous on-state current,amperes

0.01

0.1 Time,seconds

10

Fig.1
44 Surge Current Vs.Cycles

Fig.2
44 I2t9680 Vs.Time 11000 10000

50 Total peak half-sine surge current,kA 45 Maximum I 2t(Kamps2,secs) 1 10 Cycles at 50Hz 100 40 35 30 25 20 15 10

9000 8000 7000 6000 5000 4000 3000 2000 1 10

Time,m.seconds

Fig.3
Gate characteristic at 25C junction temperature 18 16 Gate voltage,VGT V 14 12 10 8 6 4 2 0 0 4 8 12 16 Gate current,IGT A 20 24 0 0 100 200 300 P G 2W 1 min. max. P GM =140W (100s spulse) 7 6 Gate voltage,VGT V 5 4 3 2
125C

Fig.4
Gate Trigger Zone at varies temperature 4.5 V,450MA
-30C -10C 25 C

400

500

600

700

800

Gate current,IGT mA

Fig.5

Fig.6

http://www.tech-sem.com

Page 2 of 3

Y100KKM
Outline:

http://www.tech-sem.com

Page 3 of 3