Ordering number : ENN7910

2SK3101LS

N-Channel Silicon MOSFET

2SK3101LS
Features

General-Purpose Switching Device Applications

Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 400 30 11 44 2.0 40 150 --55 to +150 69.1 11 Unit V V A A W W C C mJ A

*1 VDD=50V, L=1mH, IAV=11A *2 L1mH, single pulse

Electrical Characteristics at Ta=25C

Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 VDS=320V, VGS=0 VGS= 30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=15V Ratings min 400 1.0 100 3.0 4.0 8.0 0.32 0.4 4.0 typ max Unit V

mA nA
V S

Marking : K3101

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81004 TS IM TB-00000033 No.7910-1/5

2SK3101LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=11A IS=11A, VGS=0 Ratings min typ 1850 480 240 19 35 140 41 58 0.9 1.2 max Unit pF pF pF ns ns ns ns nC V

Package Dimensions unit : mm 2078C

10.0 3.2 4.5 2.8

3.5 7.2 16.1 16.0

3.6

0.9

1.2

1.2

0.75 1 2 3

14.0

0.7

1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)

2.55

2.55

Switching Time Test Circuit

VDD=200V

2.4

0.6

Unclamped Inductive Test Circuit

L 50
VGS=15V PW=1s D.C.0.5% ID=8A RL=25 VOUT

DUT

10V 0V

50

VDD

P.G

RGS 50

2SK3101LS

No.7910-2/5

2SK3101LS
25

ID -- VDS
10V

30

ID -- VGS
VDS=10V
Tc= --25C

20

15V
8V

25

25C 75C

Drain Current, ID -- A

Drain Current, ID -- A

20

15

7V
10

15

10

VGS=6V

0 0 1 2 3 4 5 6 7 8 9 10

0 0 5 10 15 20 IT06562

Drain-to-Source Voltage, VDS -- V

1.0 0.9 0.8 0.7 0.6 0.5

IT06561

RDS(on) -- VGS

Gate-to-Source Voltage, VGS -- V

1.2

RDS(on) -- Tc

Tc=25C

Static Drain-to-Source On-State Resistance, RDS(on) --

Static Drain-to-Source On-State Resistance, RDS(on) --

1.0

0.8

0.6

8A
0.4 0.3 0.2 4 6 8

0.4

ID=16A
1A
10 12 14 16 18 20

10V S= G V V 8A, =15 I D= GS V , 8A I D=

0.2

0 --50

--25

25

50

75

100

125

150

Gate-to-Source Voltage, VGS -- V

2

yfs -- ID
25C

IT06563 7

Case Temperature, Tc -- C

IT06564

VGS(off) -- Tc
VDS=10V ID=1mA

Forward Transfer Admittance, yfs -- S

VDS=10V
10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 6

Cutoff Voltage, VGS(off) -- V

3 5 7 2 3

5C --2 = Tc C 75

1 0 --100

7 1.0

10

--50

50

100

150

200 IT06566

Drain Current, ID -- A
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

IT06565 1000 7 5

Case Temperature, Tc -- C

IF -- VSD

SW Time -- ID
VDD=200V VGS=15V
td (off)

VGS=0V

Switching Time, SW Time -- ns

Forward Current, IF -- A

3 2 100 7 5 3 2 10 7 5 0.1

tf

5C

td(on)

tr

25C
0.6

0.01 7 5 3 2 0.001 0.2

0.4

Tc= 7

--25C
0.8

1.0

1.2 IT06567

1.0

10

Diode Forward Voltage, VSD -- V

Drain Current, ID -- A

IT07364

No.7910-3/5

2SK3101LS
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 15 20 25 30 IT06568 2.5 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65

Ciss, Coss, Crss -- VDS

f=1MHz

12

VGS -- Qg
VDS=200V ID=11A

Gate-to-Source Voltage, VGS -- V

Ciss

10

Ciss, Coss, Crss -- pF

Coss

Crss

Drain-to-Source Voltage, VDS -- V

100 7 5 3 2

Total Gate Charge, Qg -- nC

IT06569

ASO
Allowable Power Dissipation, PD -- W
IDP=44A ID=11A
<1s 10 s 100 s

PD -- Ta

2.0

Drain Current, ID -- A

10 7 5 3 2 1.0 5 3 3 2 0.1 7 5 3 2 0.01

1m s 10m DC 100 s ope ms rat ion Operation in this area is limited by RDS(on).

1.5

1.0

0.5

Tc=25C Single pulse

2 3 5 7 10 2 3 5 7 100 2 3 5

0 0 20 40 60 80 100 120 140 160 IT06570

1.0

Drain-to-Source Voltage, VDS -- V

45

Ambient Temperature, Ta -- C

IT06572

PD -- Tc

Allowable Power Dissipation, PD -- W

40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160

Case Temperature, Tc -- C

IT06571

No.7910-4/5

2SK3101LS

Note on usage : Be careful in handling the 2SK3101LS because it has no protection diode between gate and source.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customers products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2004. Specifications and information herein are subject to change without notice.
PS No.7910-5/5

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