Vibration Energy Harvesting

Introduction Characteristics of Various Vibration Sources Vibration to Electricity Conversion Model Vibrations to Electricity Conversion Methods Proposed S
MEMS Based Vibration Energy Harvesting
Guided by Dr. M.R. Baiju Professor Dept. of ECE CET Presented by Visakh. V Reg No. : 11 400 012
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Overview
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5 6 7 8 9 10 11 12 13
Introduction Characteristics of Various Vibration Sources Vibration to Electricity Conversion Model Vibrations to Electricity Conversion Methods Electromagnetic Power Conversion Electrostatic Power Conversion Piezoelectric Power Conversion Proposed Structure Layout of Proposed Structure Process Flow of Proposed Structure Meshing of the EH Structure First Structure Resonant Frequency Reduction Second Structure Third Structure Conclusions
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Introduction
Wireless Sensor Networks Realising Wireless Sensor Networks (WSN) is of great interest in the research community for applications like monitoring temperature, light, pressure etc. One of the challenges is powering the WSN nodes.Batteries are not enough. Low power DSPs and advances in VLSI technology has reduced the power levels. Harvesting ambient energy from the environment(solar energy, thermal gradients, vibrations etc) Earlier researches nds ambient vibrations as an important solution.
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Characteristics of Various Vibration Sources
Figure: Vibration spectrum of a microwave oven(Courtesy of [?])
There will be a fundamental vibration frequency at a fairly low frequency. There will be a few higher order harmonics. Most of the vibration energy is concentrated at a few discrete frequencies. Fundamental vibration frequency for almost all sources is less than 500 Hz.
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Vibration to Electricity Conversion Model
Figure: Generic vibration converter model proposed by Williams and Yates [?]
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3 2 ) Y n |P | = (2T ) + (1 ( )2 )2 n n me n 2 ( (1)
|P | =
me 3 Y 2 2 4T (2)
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|P | =
me A2 2 4T (3)
where: e electrical damping ratio m mechanical damping ratio T combined damping ratio (e + m ) n natural frequency of the mass spring system frequency of the driving vibrations Y input displacement
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The conclusions from equations (2)?? and (3)?? are The power output is proportional to the square of the acceleration magnitude of the driving vibrations. Power is proportional to the proof mass of the converter The equivalent electrically induced damping ratio is designable, and the power output is optimized when it is equal to the mechanical damping ratio. For a given acceleration input, power output is inversely proportional to frequency. It is critical that the natural frequency of the conversion device closely matches the fundamental vibration frequency of the driving vibrations.
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Vibrations to Electricity Conversion Methods
There are mainly three main methods for converting the energy from vibrations to electrical energy. They are Electromagnetic Power Conversion Elecrostatic Power Conversion Piezoelectric Power Conversion
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Electromagnetic Power Conversion
Electromagnetic Power Conversion
The conversion results from the relative motion of an electrical conductor in a magnetic eld (Faradays law of Electromagnetic Induction) = No separate voltage source is required. No mechanical contacts are required, so less mechanical damping. The voltage levels is very low(less than 100mV). Cannot be integrated with standard microelectronic technology. d B dt (4)
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Electrostatic Power Conversion
Two conductors separated by a dielectric (i.e. a capacitor), which move relative to one another. As the conductors move the energy stored in the capacitor changes, thus providing the mechanism for mechanical to electrical energy conversion. E= 1 1 Q2 QV = CV 2 = 2 2 2C (5)
Constant Charge Mode As capacitance reduces in constant charge, voltage increases and energy stored increases. Constant Voltage Mode As capacitance increases, charge increases and hence energy stored increases.
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Features
Voltages of 2 to several volts can be directly generated. Can be easily integrated with microelectronics. Require a separate voltage source Mechanical limit stops are required.
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Piezoelectric Power Conversion

Piezoelectric materials physically deform in the presence of an electric eld, or conversely, produce an electrical charge when mechanically deformed. The constitutive equations for a piezoelectric material are = + dE Y (6) (7)
D = E + d where: is mechanical strain is mechanical stress Y is the modulus of elasticity (Youngs Modulus) d is the piezoelectric strain coefcient E is the electric eld D is the electrical displacement (charge density) is the dielectric constant of the piezoelectric material
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Features
Voltages in the range of 2 to several volts and currents of the order of tens to hundreds of microamperes. No separate voltage source is needed. There are no mechanical limit stops. Difculty in integration with microelectronics.
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Modes of Operation
(a) Figure
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Proposed Structure
The device is designed in MEMS design softwares Conventorware and Coventor Mems+. Our structure has dimensions (1000 m 200 m 714 m )
Figure: Proposed EH Structure
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Layout
(a) Cross Section of EH Structure
(b) Top View of EH Structure
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Process ow
(c) Mask for etching the

deposited Silicon
(d) Anchor and Proof mass part created after etching
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Process ow
(e) Mask for etching deposited

thin Silicon layer
(f) Structure got after etching thin silicon layer
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Process ow
(g) Mask for SiO2 deposition
(h) Structure after SiO2 deposition by this mask
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Process ow
(i) Mask for etching Al to create

lower electrode
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Process ow
(j) Mask for etching the

deposited PZT layer
(k) Remaining piezoelectric layer after etching
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Process ow
(l) Mask for etching the

deposited Platinum electrode
(m) Remaining upper electrode after etching
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Meshing of the EH Structure

Partitioned the model into two - the beam part and the rest. Manhattan Mesher setting is used as structure is orthogonal Mesh setting For Beam Part For other parts X direction: 40m X direction: 40m Y direction: 4m Y direction: 40m Z direction: 1m Z direction: 40m
Figure: Meshed Model of the Proposed Structure
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Theoretical Natural Frequency of a Rectangular Beam
The natural frequency of a rectangular beam, having Youngs modulus E, length l, width b, depth d, and the effective mass of beam and proof mass m is given by fn = 1 2 k m (8)
1 Ebd 3 2 4ml 3 The total mass at the free end of the cantilever is given by fn = m= 33 mb + mp 140
(9)
(10)
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First Structure
(a) Cross Section
(b) Top View Figure: First structure layout
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Results
Analytical Result Substituting the value of m and k in equation(9) ??,we get the natural frequency of our device as 1 2 7.715 4.5817 108 (11)
fn =
= 2066Hz
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FEM Results
Modal Analysis
Figure: First three modes
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FEM Results
Tip Displacement
Figure: Tip displacement at 1g acceleration
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FEM Results
Voltage Output
Figure: Voltage output at 1g acceleration
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FEM Results
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Results
Modal Frequency(Hz) Voltage at 1g (V) Power at 1g (W) Voltage at 2g (V) Power at 2g (W)
2092 10.2904 53 14 98
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Resonant Frequency Reduction
The equation for the natural frequency of a cantilever beam with one end xed and a proof mass at the other end is given by 1 Ebd 3 2 4ml 3 The resonant frequency of the device can be reduced by fn = increasing mass increasing beam length reducing the beam width reducing the beam depth (height) (12)
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Second Structure
(a) Cross Section
(b) Top View Figure: Second structure layout
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Results
Analytical Result Substituting the value of m and k in equation (9) ??,we get the natural frequency of our device as 1 2 7.715 3.7841 107 (13)
fn =
= 719Hz
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FEM Results
Modal Analysis
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FEM Results
Voltage Output
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FEM Results
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Results
732.19 5 12.5 10 50
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Third Structure
(a) Cross Section
(b) Top View Figure: Third structure layout
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Results
Analytical Result Substituting the value of m and k in equation (9) ??,we get the natural frequency of our device as 1 2 1.447695 5.40645 107 (14)
fn =
= 260.57Hz
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FEM Results
Modal Analysis
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FEM Results
Voltage Output
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FEM Results
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Results
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Conclusions
Three different structures were proposed which vibrates at 3 different frequencies. First Structure(600 m 200 m 504 m ) Resonant frequency : 2092 Hz Power level : 53 W at 1g acceleration(10.29 V) : 53 W at 2g acceleration (14 V) Second Structure(600 m 200 m 504 m ) Resonant frequency : 732 Hz Power level : 12.5 W at 1g acceleration (5 V) : 50 W at 2g acceleration (10 V) Third Structure(1000 m 200 m 714 m ) Resonant frequency : 276.5 Hz Power level : 11 W at 1g acceleration (4.7 V) : 45 W at 2g acceleration (9.5 V)
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Provided a systematic procedure for reducing the resonant frequency of a cantilever based vibration energy harvester with an analytical approach. We can change the resonant frequency by increasing the proof mass, increasing the length of the beam , reducing the beam width or by reducing the beam height within the mechanical constraints. " High Performance Piezielectric MEMS Energy Harvesteer based on d33 mode of PZT thin lm on buffer layer with PbTiO3 inter layer " by J.C.Park et.al, Transducers IEEE 2009, produces 1.1 W from 0.4g at a frequency of 528 Hz. " A piezoelectric vibration harvester using clamped guided beams " by Z. Wang et.al at 2012 MEMS Conference IEEE produces 20W at 694 Hz from 1.2g.
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S. J. Roundy, Energy scavenging for wireless sensor nodes with a focus on vibration to electricity conversion, Ph.D. dissertation, THE UNIVERSITY OF CALIFORNIA, BERKELEY, 2003. C. B. Williams and R. B. Yates, Analysis of a microelectric generator for microsystems. Transducers 95 / Eurosensors , 1995, pp. 369 372. V. Kaajakari, T. Mattila, A. Lipsanen, and A. Oja, Nonlinear mechanical effects in silicon longitudinal mode beam resonators, Sensors and Actuators, vol. 120, pp. 6470, April 2005. Electrical Properties Of Materials, 7th ed. Oxford University Press.
R. J. M. Vullers, R. van Schaijk, I. Doms, C. V. Hoof, and R. Mertens, Micropower energy harvesting, Solid State Electronics, vol. 53, pp. 684693, 2009. P. D. Mitcheson, E. M. Yeatman, and A. S. Holmes, Architectures for vibration-driven micropower generators, JMEMS, vol. 13, no. 3, June 2004. R. Amritharajah and A. P. Chandrakasan, Self-powered signal processing using vibration-based power generation, IEEE Journal of Solid State Circuits, vol. 33, pp. 687695, 1998.
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E. M. Yeatman, P. D. Mitcheson, and A. S. Holmes, Micro-engineered devices for motion energy harvesting. IEEE International Electron Devices Meeting, December 2007. A. Hajati, S. P. Bathurst, H. J. Lee, and S. G. Kim, Design and fabrication of a nonlinear resonator for ultra wide-bandwidth energy harvesting applications. Cancun, Mexico: IEEE MEMS CONFERENCE, January 2011. Z. Wang, S. Matova, R. Elfrink, M. Jambunathan, C. de Nooijer, R. van Schaijk, and R. J. M. Vullers, A piezoelectric vibration harvester based on clamped guided beams. IEEE MEMS CONFERENCE, February 2012. M. Marzencki, M. Defosseux, and S. Basrour, Mems vibration energy harvesting devices with passive resonance frequency adaptation capability, JMEMS, VOL. 18, NO. 6, DECEMBER 2009, vol. 18, no. 6, December 2009. S. Meninger, J. O. Mur-Miranda, R. Amirtharajah, A. P. Chandrakasan, and J. H. Lang, Vibration-to-electric energy conversion, vol. 9, 2001. P. D. Mitcheson, E. M. Yeatman, G. Rao, A. S. Holmes, and T. C. Green, Energy harvesting from human and machine motion for wireless electronic devices, vol. 96, no. 9. IEEE Proceedings, September 2008.
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B. Morgan and R. Ghodssi, Vertically-shaped tunable mems resonators, JMEMS, vol. 17, pp. 8592, February 2008.
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THANK YOU
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Vibration Energy Harvesting

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Introduction Characteristics of Various Vibration Sources Vibration to Electricity Conversion Model Vibrations to Electricity Conversion Methods Proposed S

MEMS Based Vibration Energy Harvesting

Characteristics of Various Vibration Sources

Figure: Vibration spectrum of a microwave oven(Courtesy of [?])

Vibration to Electricity Conversion Model

Vibrations to Electricity Conversion Methods

Electromagnetic Power Conversion

Electromagnetic Power Conversion

Electrostatic Power Conversion

Electrostatic Power Conversion

Electrostatic Power Conversion

Piezoelectric Power Conversion

Piezoelectric Power Conversion

Piezoelectric Power Conversion

Piezoelectric Power Conversion

Figure: Proposed EH Structure

(a) Cross Section of EH Structure

(b) Top View of EH Structure

(c) Mask for etching the

(d) Anchor and Proof mass part created after etching

(e) Mask for etching deposited

(f) Structure got after etching thin silicon layer

(g) Mask for SiO2 deposition

(h) Structure after SiO2 deposition by this mask

(i) Mask for etching Al to create

(j) Mask for etching the

(k) Remaining piezoelectric layer after etching

(l) Mask for etching the

(m) Remaining upper electrode after etching

Meshing of the EH Structure

Figure: Meshed Model of the Proposed Structure

Theoretical Natural Frequency of a Rectangular Beam

(a) Cross Section

(b) Top View Figure: First structure layout

Figure: First three modes

Figure: Tip displacement at 1g acceleration

Figure: Voltage output at 1g acceleration

Figure: Voltage output at 2g acceleration

Resonant Frequency Reduction

(a) Cross Section

(b) Top View Figure: Second structure layout

Figure: First three modes

Figure: Voltage output at 1g acceleration

Figure: Voltage output at 2g acceleration

(a) Cross Section

(b) Top View Figure: Third structure layout

Figure: First three modes

Figure: Voltage output at 1g acceleration

Figure: Voltage output at 2g acceleration

276.49 4.7 11 9.5 45

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