BAV99 Small Signal Diode

August 2011

BAV99 Small Signal Diode

Connection Diagram
3
3 3

2
1

A7
2 1 2

SOT-23

Absolute Maximum Ratings*

Symbol
VRRM IF(AV) IFSM

TA = 25C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 300 microseconds Storage Temperature Range Operating Junction Temperature

Value
70 200 1.0 8.0 -55 to +150 -55 to +150

Units
V mA A A C C

Tstg Tj

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

Parameter
Power Dissipation Thermal Resistance, Junction to Ambient

Value
350 357

Units
mW C/W

Electrical Characteristics
Symbol
VR VF

TA = 25C unless otherwise noted

Parameter
Breakdown Voltage Forward Voltage

Test Condition

Min.
70

Max.
715 855 1.0 1.25 2.5 30 50 1.5 6.0

Units
V mV mV V V A A A pF ns

IR

CT trr

IR = 100A IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Reverse Leakage VR = 70V VR = 25V, TA = 150C VR = 70V, TA = 150C Total Capacitance VR = 0V, f = 1.0MHz Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA, RL = 100

2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 1

www.fairchildsemi.com

BAV99 Small Signal Diode

Typical Performance Characteristics

150

Ta= 25 C

300

Ta= 25 C

Reverse Voltage, V R [V]

Reverse Current, IR [nA]

1 2 3 5 10 20 30 50 100

140

250

200

130

150

120

100

50

110

Reverse Current, IR [uA]

10

20

30

50

70

100

Reverse Voltage, V R [V]

Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA

Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V

Ta= 25 C
700 450

Ta= 25 C

Forward Voltage, VF [mV]

Forward Voltage, VF [mV]

650

400

600

350

550

300

500

250 450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10

Forward Current, IF [uA]

Forward Current, IF [mA]

Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA

Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA

1.3

Ta= 25 C

Ta= 25 C

Forward Voltage, VF [V]

Total Capacitance [pF]

10 20 30 50 100 200 300 500

1.4

1.2

1.2

1.0

1.1

0.8

0.6

1.0 0 2 4 6 8 10 12 14

Forw ard C urrent, I F [m A ]

R everse V oltage [V ]

Figure 5. Forward Voltage vs Forward Current VF - 10 - 800 mA

Figure 6. Total Capacitance vs Reverse Voltage

2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 2

www.fairchildsemi.com

BAV99 Small Signal Diode

Typical Performance Characteristics (Continued)

4.0
400

Ta= 25 C

Reverse Recovery Time [nS]

3.5
300

3.0

Current [mA]

2.5

200

IF

(A V

-A V

ER

AG

2.0

ER E

CT

100

IF IE

DC U

RR

1.5
0

EN

TmA
150

1.0 10 20 30 40 50 60

50

100
o

Reverse Current [mA]

Ambient Temperature, T A [ C]

Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10 mA vs 60 mA

Figure 8. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA)

500

Power Dissipation, P [mW ] D

400

DO -35 P kg
300

SO T-23 P kg
200

100

0 0 50 100 150
o

200

Average Tem perature, I O [ C ]

Figure 9. Power Derating Curve

2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 3

www.fairchildsemi.com

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