LED Power and Efficiency The power generated internally by an LED may be determined by consideration of the excess electrons

and holes in the p and n type material respectively (i.e. the minority carriers) when it is forward biased and carrier injection takes place at the device contact.

LED Power and Efficiency

Generally the excess minority carrier density decays exponentially with time time t

n = n(0) exp (-t/)

d/dt[n] = (J/ed)- (n/ ) (m-3s-1)

LED Power and Efficiency The condition for the equilibrium is obtained by setting the derivative of the above to zero.

Therefore [n] = (J /ed)

(m-3)

LED Power and Efficiency

The total No. of carrier recombination rate per second or recombination rate

LED Power and Efficiency

When the forward biased current into the device is I, then total no of recombination per second

Rt = i/e int = rr/(rt) = rr /(rr +rnr) = Rr/Rt

LED Power and Efficiency

Rr = = (i/e )int

P = hf (i/e )int P int = (hc/) (i/e )int

LED Power and Efficiency

int

= [1/{1+(rnr/rr)} = [1/{1+(r / nr)}

LED Power and Efficiency

1/ =1/ r+ 1/ nr

Example
The radiative and non-radiative recombination life times of the minority carrier in active region of DH LED are 60 ns and 100 ns respectively. Determine the total carrier recombination lifetime and the power internally generated within the device when the peak emmision wavelength is 0.87 micrometer at a drive current 40 mA. Ans: = 37.5 ns int = 62.5% Pint= 35.6mW.

Edge Emitter LED This has a similar geometry to a conventional contact stripe ILD It takes advantage of transparent guiding layers with very thin active layer(50-100 m)in order that the light produced in the active layer spreads into transparent layer, reducing self absorption in the active layer.

Edge Emitter LED

The Effective radiance at the emitting end face can be very high giving an increased coupling efficiency into small NA fiber compared with surface emitter.

Edge Emitter LED

However Surface emitter generally radiate more power into air (2.5-3 times) than ELED Since the emitted light is less effected by re-absorption and interfacial recombination.

Edge Emitter LED

But it has been seen that ELED couples more optical power into low NA (less than0.3) whereas SLED just does its opposite

Edge Emitter LED

The enhance wave guiding of the edge emitter enables it to couple 7.5 times more power into low NA than SLED
Edge Emitter LED

The Stripe geometry of ELED allows very high carrier injection densities for a given driving current.

Edge Emitter LED

Last but not the least ELED have better modulation BW (order of hundreds MHz) than comparable with SLED

Coupling : ILD To Fiber