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Mechatronics
Chapter 9 Resistive Sensors 9-3
Background Theory
R=
For Semiconductors: The piezoresistive effect describes the changing resistivity of a semiconductor due to applied mechanical stress/strain. Gauge factor G of a piezoresistive device
G=
R R
axial
axial
L = L
axial
Force = A
Gauge Factor
,
ln R = ln + ln L ln A dR d dL dA = + R L A
dh dw dL = = h w L
dR d = + axial + 2 axial R dR R = (1 + 2 ) axial + d
A = wh dA dh dw = + A h w
L R= A
dA dL = 2 A L
Gauge Factor
,
dR R = (1 + 2 ) axial + d
dR R
axial
= (1 + 2 ) +
axial
Piezoresistive effect for semiconductors
F: Gauge factor
F=
dR R
axial
Department of Mechanical Engineering
High impedance VM
Temperature compensation
,
Temperature change can cause significant change in resistance Using a dummy gauge
Uniaxial stress
x = E x
P x = A
P = AE x
Precision Strain Gages 1-Axis General Purpose
Review: Stress-strain
Hooks Law..
Principal stresses
Principal stresses
Biaxial stress
Biaxial stress
Biaxial strain gauges for measuring axial strain 0/90 gauge pattern
dR R
axial
= (1 + 2 ) +
axial
where i and j take values from 1 to 6, denoting the parameters in the corresponding strain direction and is the piezoresistive coefficient. Material such as single crystal silicon has a cubic crystal structure, of which can be described using three constants 11, 12, and 44.
Department of Mechanical Engineering
dR R
axial
= (1 + 2 ) +
axial
where i and j take values from 1 to 6, denoting the parameters in the corresponding strain direction and is the piezoresistive coefficient. Material such as single crystal silicon has a cubic crystal structure, of which can be described using three constants 11, 12, and 44.
Department of Mechanical Engineering