Вы находитесь на странице: 1из 6

www.DataSheet4U.com

www.DataSheet.co.kr

www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U − MOSIII)

2SJ681

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (UMOSIII)

2SJ681

Relay Drive, DCDC Converter and Motor Drive Applications

4-V gate drive

Low drainsource ON resistance: R DS (ON) = 0.12 (typ.)

High forward transfer admittance: |Y fs | = 5.0 S (typ.)

Low leakage current: I DSS = 100 µA (max) (V DS = 60 V)

Enhancement mode: V th = 0.8 to 2.0 V

(V DS = 10 V, I D = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

 

Symbol

Rating

Unit

Drainsource voltage

V

DSS

60

V

Draingate voltage (R GS = 20 k)

V

DGR

60

V

Gatesource voltage

V

GSS

±20

V

 

DC

(Note 1)

 

I

D

5

A

Drain current

Pulse(Note 1)

I

DP

20

A

Drain power dissipation

 

P

D

20

W

Single pulse avalanche energy (Note 2)

 

E

AS

40.5

mJ

Avalanche current

I

AR

5

A

Repetitive avalenche energy

(Note 3)

E

AR

2

mJ

Channel temperature

 

T

ch

150

°C

Storage temperature range

   

T

stg

55~150

°C

Characteristics

 

Symbol

Max

Unit

Thermal resistance, channel to case

R th (chc)

6.25

°C / W

Thermal resistance, channel to ambient

 

R th (cha)

125

°C / W

Thermal Characteristics

Unit: mm 6.5±0.2 5.2±0.2 0.6 MAX. 1.1±0.2 0.9 0.6 MAX
Unit: mm
6.5±0.2
5.2±0.2
0.6 MAX.
1.1±0.2
0.9
0.6 MAX
2.3
2.3
123
0.6±0.15
0.8 MAX.
1.1 MAX.
0.6±0.15
JEDEC
JEITA
TOSHIBA
2-7J2B
4.1±0.2
1.6
2.3±0.2
5.7
5.5±0.2
1.5±0.2

Weight: 0.36 g (typ.)

Note 1:

Ensure that the channel temperature does not exceed 150.

Note 2:

V DD = 25 V, T ch = 25°C (initial), L = 2.2 mH, R G = 25 , I AR = 5 A

Note 3:

Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

is an electrostatic-sensitive device. Please handle with caution. 1 2006-06-30 Datasheet pdf - http://www.DataSheet4U.net/

1

2006-06-30

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet4U.com

www.DataSheet.co.kr

www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 Electrical Characteristics ( T a = 2 5 ° C ) Characteristics

2SJ681

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

 

Test Condition

 

Min

Typ.

Max

Unit

Gate leakage current

 

I

GSS

V GS = ±16 V, V DS = 0 V

 

±10

µA

Drain cutoff current

 

I

DSS

V DS = 60 V, V GS = 0 V

 

100

µA

 

V

(BR) DSS

I D = 10 mA, V GS = 0 V

 

60

V

Drainsource breakdown voltage

V

(BR) DSX

I D = 10 mA, V GS = 20 V

 

35

V

Gate threshold voltage

 

V

th

V DS = 10 V, I D = 1 mA

 

0.8

2.0

V

   

V GS = 4 V, I D = 2.5 A

 

0.16

0.25

 

Drainsource ON resistance

R DS (ON)

V GS = 10 V, I D = 2.5 A

 

0.12

0.17

Forward transfer admittance

 

|Y

fs |

V DS = 10 V, I D = 2.5 A

 

2.5

5.0

S

Input capacitance

 

C

iss

 

700

 

Reverse transfer capacitance

 

C

rss

V DS = 10 V, V GS = 0 V, f = 1 MHz

 

60

pF

Output capacitance

 

C

oss

 

90

 

Rise time

 

t

r

V

0 V

GS

I D = − 2.5 A 4.7 Ω

I D = 2.5 A

4.7 Ω
4.7 Ω

Output

14

 

Turnon time

 

t

on

10 V

24

Switching time

   

R L = 12

ns

         

Fall time

 

t

f

   

14

   

V

DD

30 V

Turnoff time

 

t

off

<

Duty = 1%, t w = 10 µs

95

Total gate charge (Gatesource plus gatedrain)

 

Q

g

 

15

 

Gatesource charge

 

Q

gs

V DD ≈ −48 V, V GS = 10 V, I D = 5 A

11

nC

Gatedrain (“miller”) charge

 

Q

gd

4

Characteristics

Symbol

 

Test Condition

 

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

 

I

DR

 

5

A

Pulse drain reverse current (Note 1)

 

I

DRP

 

20

A

Forward voltage (diode)

 

V

DSF

I DR = 5 A, V GS = 0 V

 

1.7

V

Reverse recovery time

 

t

rr

I DR = 5 A, V GS = 0 V

 

40

ns

Reverse recovery charge

 

Qrr

dl DR / dt = 50 A / µS

32

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Marking

J681
J681

Part No. (or abbreviation code)

Lot No.

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-06-30 Datasheet pdf - http://www.DataSheet4U.net/

2

2006-06-30

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet4U.com

www.DataSheet.co.kr

www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 I D – V DS −5 −10 −6 −4. −3.5 −8 Common source

2SJ681

I D – V DS
I D – V DS
−5 −10 −6 −4. −3.5 −8 Common source Tc = 25°C Pulse test −4 −3
−5
−10
−6
−4.
−3.5
−8
Common source
Tc = 25°C
Pulse test
−4
−3
−3
−2.8
−2
V GS = −2.5V
−1
0
Drain current
I D
(A)

0

0.4

0.8

1.2

1.6

2.0

Drain−source voltage (V) V DS
Drain−source voltage
(V)
V DS
I D – V GS
I D – V GS
−10 Common source V DS = −10 V Pulse test −8 −6 25 −4 −2
−10
Common source
V DS = −10 V
Pulse test
−8
−6
25
−4
−2
100
Tc = −55°C
0
Drain current
I D
(A)

0

1

2

3

4

5

Gate−source voltage (V) V GS
Gate−source voltage
(V)
V GS
I D – V DS
I D – V DS
−10 −10 −6 −4 Common source Tc = 25°C Pulse test −8 −8 −3.5 −6
−10
−10
−6
−4
Common source
Tc = 25°C
Pulse
test
−8
−8
−3.5
−6
−4
−3
−2
V GS = −2.5 V
0
Drain current
I D
(A)

0 2

4

6

8

10

Drain−source voltage (V) V DS
Drain−source voltage
(V)
V DS
V DS – V GS
V DS – V GS
−2.0 Common source Tc = 25°C Pulse test −1.6 −1.2 −0.8 −5 −0.4 −2.5 I
−2.0
Common source
Tc = 25°C
Pulse test
−1.6
−1.2
−0.8
−5
−0.4
−2.5
I D = −1.2 A
0
Drain−source voltage
V DS
(V)

0 4

8

12

16

20

Gate−source voltage (V) V GS
Gate−source voltage
(V)
V GS
⎪Y fs ⎪ − I D
⎪Y fs ⎪ − I D
100 Common source V DS = −10 V Pulse test 10 Tc = −55°C 100
100
Common source
V DS = −10 V
Pulse test
10
Tc = −55°C
100
25
1
0.1
−0.1
−1
−10
−100
Forward transfer admittance
⎪Y fs ⎪
(S)
Drain current I D (A)
Drain current
I D
(A)
R DS (ON) − I D
R DS (ON) − I D
0.5 Common source Tc = 25°C Pulse test 0.4 0.3 −4 V 0.2 0.1 V
0.5
Common source
Tc = 25°C
Pulse test
0.4
0.3
−4 V
0.2
0.1
V GS = −10V
0
Drain−source ON resistance
R DS (ON)
(Ω)

0

2

4

6

8

10

Drain current I D (A)
Drain current
I D
(A)
(Ω) 0 − 2 − 4 − 6 − 8 − 10 Drain current I D

3

2006-06-30

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet4U.com

www.DataSheet.co.kr

www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 R DS (ON) − Tc −0.4 Common source Pulse test −0.3 I D

2SJ681

R DS (ON) − Tc
R DS (ON) − Tc
−0.4 Common source Pulse test −0.3 I D = −5 A −2.5 −1.2 −0.2 −5
−0.4
Common source
Pulse test
−0.3
I D = −5 A
−2.5
−1.2
−0.2
−5
V GS = −4 V
−2.5
−1.2
−0.1
V GS = −10 V
0
Drain−source ON resistance
R DS (ON)
(Ω)

80

40

0

40

80

120

160

Case temperature Tc (°C)
Case temperature
Tc
(°C)
Capacitance – V DS
Capacitance – V DS
10000 Common source V GS = 0 V f = 1 MHz Tc = 25°C
10000
Common source
V
GS = 0 V
f
= 1 MHz
Tc = 25°C
1000
C
iss
100
C
oss
C
rss
10
Capacitance
C
(pF)

0.1

1

10

100

Drain−source voltage (V) V DS
Drain−source voltage
(V)
V DS
I DR − V DS
I DR − V DS
10 Common source −10 Tc = 25°C −5 Pulse test −3 −1 V GS =
10
Common source
−10
Tc
= 25°C
−5
Pulse test
−3
−1
V GS = 0 V
1
0.1
Drain reverse current
I DR
(A)
0 0.2 0.4 0.6 0.8 1.0 1.2 Drain−source voltage (V) V DS V th −
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain−source voltage
(V)
V DS
V th − Tc
−2.0
Common source
V DS = −10 V
I D = 1 mA
Pulse test
−1.6
−1.2
−0.8
−0.4
0
−80
−40
0
40
80
120
160
Case temperature
Tc
(°C)
P D − Tc
P D − Tc
40 30 20 10 0 0 40 80 120 160 200 Drain power dissipation P
40
30
20
10
0 0
40
80
120
160
200
Drain power dissipation
P D
(W)
Case temperature Tc (°C)
Case temperature
Tc
(°C)
Dynamic input/output characteristics −50 −25 V DS Common source I D = −5 A −20
Dynamic input/output
characteristics
−50
−25
V
DS
Common source
I D = −5 A
−20
−40
Ta = 25°C
Pulse test
−30
−15
−12V
−24V
−10
−20
V DD = −48 V
−10
−5
V
GS
0
0
Drain−source voltage
V DS
(V)
Gate−source voltage
V GS
(V)

0

5

10

15

20

25

30

Total gate charge Q g (nC)
Total gate charge
Q g
(nC)
V GS (V) 0 5 10 15 20 25 30 Total gate charge Q g (nC)

4

2006-06-30

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet4U.com

www.DataSheet.co.kr

www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 r th − t w 10 1 Duty = 0.5 0.2 Single Pulse

2SJ681

r th − t w
r th − t w
10 1 Duty = 0.5 0.2 Single Pulse 0.1 P DM 0.1 t 0.05 0.02
10
1
Duty = 0.5
0.2
Single Pulse
0.1
P
DM
0.1
t
0.05
0.02
T
0.01
Duty = t/T
R th (ch-c) = 6.25°C/W
0.01
10 µ
100 µ
1 m
10 m
100 m
1
10
Normalized transient thermal impedance
r th (t) /R th (ch-c)
Pulse width (s) t w
Pulse width
(s)
t w
Safe operating area −100 I D max (pulsed) * −10 1 ms * 100 µs
Safe operating area
−100
I D max (pulsed) *
−10
1 ms *
100 µs *
I D max (continuous)
DC operation
Tc = 25°C
−1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
V DSS max
−0.1
−0.1
−1
−10
−100
Drain-source voltage
(V)
V DS
Drain current
I D
(A)
Avalanche energy
E AS
(mJ)
E AS – T ch
E AS – T ch
50 40 30 20 10 0
50
40
30
20
10
0

25

50

75

100

125

150

Channel temperature (initial) Tch (°C)
Channel temperature (initial)
Tch
(°C)

0 V

15 V

150 Channel temperature (initial) Tch (°C) 0 V − 15 V Test circuit B VDSS I

Test circuit

B VDSS I AR V V DD DS Wave form 1 ⎛ ⎞ B VDSS
B VDSS
I AR
V
V DD
DS
Wave form
1
B VDSS
=
L
I
2 ⎜
Ε AS
2
B VDSS
V DD ⎠

R G = 25 V DD = −25 V, L = 2.2 mH

V DD ⎠ R G = 25 Ω V D D = − 25 V, L

5

2006-06-30

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet4U.com

www.DataSheet.co.kr

www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 RESTRICTIONS ON PRODUCT USE 0 6 0 1 1 6 E A A

2SJ681

RESTRICTIONS ON PRODUCT USE

060116EAA

The information contained herein is subject to change without notice. 021023_D

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A

The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 021023_B

The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C

or patent rights of TOSHIBA or others. 0 2 1 0 2 3 _ C 6

6

2006-06-30

Datasheet pdf - http://www.DataSheet4U.net/