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2N60

Power MOSFET

2 Amps, 600 Volts N-CHANNEL MOSFET


Description
The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 3.8@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness

SYMBOL

Pb-free plating product number: 2N60L

ORDERING INFORMATION

Order Number Normal 2N60-TA3-T 2N60-TF3-T 2N60-TM3-T 2N60-TN3-R 2N60-TN3-T Lead Free Plating 2N60L-TA3-T 2N60L-TF3-T 2N60L-TM3-T 2N60L-TM3-T 2N60L-TN3-T Package TO-220 TO-220F TO-251 TO-252 TO-252

Pin Assignment 1 G G G G G 2 D D D D D 3 S S S S S Packing Tube Tube Tube Tape Reel Tube

Note: Pin Assignment: G: Gate D: Drain S: Source


(1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating, Blank: Pb/Sn

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2N60
Power MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)


RATINGS 600 30 2.0 TC = 25C 2.0 TC = 100C 1.26 Drain Current Pulsed (Note 2) IDP 8.0 Avalanche Energy Repetitive(Note 2) EAR 4.5 140 Single Pulse(Note 3) EAS Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 Total Power Dissipation TC = 25C PD 45 Derate above 25C 0.36 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25C 4. ISD 2.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Drain Current Continuous SYMBOL VDSS VGSS IAR ID UNIT V V A A A A mJ mJ V/ns W W/C C C

THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F SYMBOL JA RATINGS 112 112 54 54 12 12 4 4 UNIT

Thermal Resistance Junction-Case

Jc

C / W

ELECTRICAL CHARACTERISTICS (TJ =25, unless Otherwise specified.)


PARAMETER Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Forward Current Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS IDSS IGSS BVDSS/TJ TEST CONDITIONS VGS = 0V, ID = 250A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V ID = 250 A MIN 600 10 100 100 -100 0.4 TYP MAX UNIT V A A nA nA V/

VGS(TH) RDS(ON) gFS CISS COSS CRSS

VDS = VGS, ID = 250A VGS = 10V, ID =1A VDS = 50V, ID = 1A (Note 1) VDS =25V, VGS =0V, f =1MHz

2.0 3.8 2.25 270 40 5

4.0 5

V S pF pF pF

350 50 7

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2N60
Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage Continuous Drain-Source Current Pulsed Drain-Source Current Reverse Recovery Time Reverse Recovery Charge SYMBOL tD (ON) tR tD(OFF) tF QG QGS QGD VSD ISD ISM tRR QRR TEST CONDITIONS VDD =300V, ID =2.4A, RG=25 (Note 1,2) MIN TYP 10 25 20 25 9.0 1.6 4.3 MAX 30 60 50 60 11 UNIT ns ns ns ns nC nC nC V A A ns C

VDS=480V, VGS=10V, ID=2.4A (Note 1, 2)

VGS = 0 V, ISD = 2.0 A

1.4 2.0 8.0 180 0.72

VGS = 0 V, ISD = 2.4A, di/dt = 100 A/s (Note1)

Note: 1. Pulse Test: Pulse Width 300s, Duty Cycle2% 2. Essentially Independent of Operating Temperature

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2N60
Power MOSFET

TEST CIRCUITS AND WAVEFORMS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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2N60
Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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2N60
Power MOSFET

TYPICAL CHARACTERISTICS
On-Region Characteristics Transfer Characteristics

Drain-Source Voltage, VDS (V) On-Resistance Variation vs. Drain Current and Gate Voltage

Gate-Source Voltage, VGS (V) Body Diode Forward Voltage Variation vs. Source Current and Temperature

Drain Current, ID (A) Capacitance vs. Drain-Source Voltage

Source-Drain Voltage, VSD (V) Gate Charge vs. Gate Charge Voltage

Drain-Source Voltage, VDS (V)

Total Gate Charge, QG (nC)

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2N60
Power MOSFET

TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage vs. Temperature On-Resistance vs. Temperature

Junction Temperature, TJ () Max. Safe Operating Area

Junction Temperature, TJ () Max. Drain Current vs. Case Temperature

Drain-Source Voltage, VDS (V) Thermal Response

Case Temperature, TC ()

Square Wave Pulse Duration, t1 (s)

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