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NCE30H21

NCE N-Channel Enhancement Mode Power MOSFET


DESCRIPTION
The NCE30H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

GENERAL FEATURES
VDS =30V,ID =210A RDS(ON) < 2.5m @ VGS=10V (Typ:1m) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability Schematic diagram

Application
Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment

100% UIS TESTED! 100% Vds TESTED!


TO-220 top view

Package Marking And Ordering Information


Device Marking NCE30H21 Device NCE30H21 Device Package TO-220 Reel Size Tape width Quantity -

Absolute Maximum Ratings (TA=25unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS
Drain Current-Continuous Drain Current-Continuous(TC=100) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS

Limit
30 20 210 100 1000 230 1.5 1800 -55 To 175

Unit
V V A A A W W/ mJ

ID
ID (100)

IDM PD

TJ,TSTG

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Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2) RJC

NCE30H21
0.65 /W

Electrical Characteristics (TA=25unless otherwise noted) Parameter Symbol Condition


Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)
Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min
30

Typ

Max

Unit
V

BVDSS IDSS IGSS VGS(th) RDS(ON) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS trr Qrr ton

VGS=0V ID=250A VDS=30V,VGS=0V VGS=20V,VDS=0V VDS=VGS,ID=250A VGS=10V, ID=40A VDS=24V,ID=40A

1 100 2 160 8200 3000 280 18 3 1 4 2.5

A nA V m S PF PF PF nS nS nS nS nC nC nC

VDS=25V,VGS=0V, F=1.0MHz

VDD=15V,ID=40A VGS=10V,RGEN=1.8

120 50 25 210 64 40 0.85 80 180 1.2 40 120 250

VDS=24V,ID=40A, VGS=10V

VGS=0V,IS=40A TJ = 25C, IF = 40A di/dt = 100A/s(Note3)

V A nS nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. EAS conditionTj=25,VDD=15V,VG=10V,L=1mH,Rg=25

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NCE30H21

Test circuit
1EAS test Circuits

2Gate charge test Circuit:

3Switch Time Test Circuit

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http://www.ncepower.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)

NCE30H21

ID- Drain Current (A)

Normalized On-Resistance

Vds Drain-Source Voltage (V)

TJ-Junction Temperature()

Figure 1 Output Characteristics

Figure 4 Rdson-JunctionTemperature

Vgs Gate-Source Voltage (V)

ID- Drain Current (A)

Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC)

Figure 2 Transfer Characteristics


Rdson On-Resistance(m)

Figure 5 Gate Charge

ID- Drain Current (A)

Is- Reverse Drain Current (A)

Vsd Source-Drain Voltage (V)

Figure 3 Rdson- Drain Current

Figure 6 Source- Drain Diode Forward

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NCE30H21

C Capacitance (pF)

Normalized BVdss

Vds Drain-Source Voltage (V)

TJ-Junction Temperature()

Figure 7 Capacitance vs Vds

Figure 9

BVDSS vs Junction Temperature

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

TJ-Junction Temperature()

Figure 8

Safe Operation Area

Figure 10

VGS(th) vs Junction Temperatur

r(t),Normalized Effective Transient Thermal Impedance

Square Wave Pluse Duration(sec)

Figure 11 Normalized Maximum Transient Thermal Impedance

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NCE30H21

TO-220-3L Package Information

Symbol A A1 b b1 c c1 D E E1 e e1 F H h L L1 V I

Dimensions In Millimeters Min 4.470 2.520 0.710 1.170 0.330 1.200 10.010 8.500 12.060 2.540TYP. 4.980 2.590 8.440 REF. 0.000 13.400 3.560 6.360 REF. 6.300 REF. 3.735 3.935 0.300 13.800 3.960 5.180 2.890 Max 4.670 2.820 0.910 1.370 0.650 1.400 10.350 8.900 12.460

Dimensions In Inches Min 0.176 0.099 0.028 0.046 0.013 0.047 0.394 0.335 0.475 0.100TYP. 0.196 0.102 0.332 REF. 0.000 0.528 0.140 0.250 REF. 0.248 REF. 0.147 0.155 0.012 0.543 0.156 0.204 0.114 Max 0.184 0.111 0.036 0.054 0.026 0.055 0.407 0.350 0.491

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NCE30H21

Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customers products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.

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