AO4410 N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4410 is Pb-free (meets ROHS & Sony 259 specifications).

Features
VDS (V) = 30V (VGS = 10V) ID = 18A RDS(ON) < 5.5m (VGS = 10V) RDS(ON) < 6.2m (VGS = 4.5V)

UIS TESTED! Rg,Ciss,Coss,Crss Tested

D S S S G D D D D

G S

SOIC-8

Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25C Power Dissipation Avalanche Current B TA=70C
B

Maximum 30 12 18 15 80 3 2.1 30 135 -55 to 150

Units V V A

TA=25C TA=70C ID IDM PD IAR EAR TJ, TSTG

W A mJ C

Repetitive avalanche energy 0.3mH

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 31 59 16

Max 40 75 24

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4410

Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 0.8 80 4.7 6.4 5.2 102 0.64 1 4.5 9130 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.2 625 387 0.4 72.4 VGS=10V, VDS=15V, ID=18A 13.4 16.8 11 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=100A/s 7 99 13 33 22.2 15 11 135 19.5 40 30 542 0.8 85 10500 5.5 7.4 6.2 1.1 Min 30 1 5 100 1.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev5: Jan 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 4 VGS (Volts) 3 2 1 0 0 10 40 50 60 70 80 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 90 100000 VDS=15V ID=18A Capacitance (pF) 10000 Ciss

Coss 1000 Crss 100 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30

100.0 RDS(ON) limited 10ms 10.0 ID (Amps) 0.1s 1s 10s 1.0 DC TJ(Max)=150C TA=25C 100s 1ms Power (W) 10s

100 80 60 40 20 0 0.001 100

TJ(Max)=150C TA=25C

0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1

0.01

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 Z JA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton 0.1 1

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

0.01 0.00001 Single Pulse 0.001 0.0001 0.01

T 10 100 1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 10V 50 2.5V 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 6.0 Normalized On-Resistance VGS=4.5V 1.6 ID=18A VGS=4.5V ID(A) VGS=2V 40 30 20 10 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 50 VDS=5V 60

5.5 RDS(ON) (m )

1.4

VGS=10V 1.2

5.0 VGS=10V 4.5

4.0 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16

0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature

1.0E+02 1.0E+01

12 RDS(ON) (m )

ID=18A 125C IS (A)

1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05

125C

25C

25C

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts) Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com