FDS6982 Dual N-Channel, Notebook Power Supply MOSFET General Description This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction losses (less than 20m at VGS = 4.5V).
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a)
Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C Q2 Q1 Q2 Q1 All All All 30 30 27 26 1 100 -100 V mV/C A nA nA
Zero Gate Voltage Drain VDS = 24 V, VGS = 0 V Current Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V (Note 2)
On Characteristics VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 8.6 A VGS = 10 V, ID = 8.6 A, TJ = 125C VGS = 4.5 V, ID = 7.5 A VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 6.3 A, TJ = 125C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 8.6 A VDS = 5 V, ID = 6.3 A
Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6
Q2 VDS = 15 V, ID = 8.6 A, VGS = 5 V Q1 VDS = 15 V, ID = 6.3 A,VGS = 5 V
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
15 10 11 14 36 21 18 7 18.5 8.5 7.3 2.4 6.2 3.1
27 18 20 25 58 34 29 14 26 12
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = 1.3 A Voltage (Note 2) (Note 2)
Q2 Q1 Q2 Q1
0.72 0.74
1.3 1.3 1.2 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.Thermal rating based on independant single device opperation.
a) 78 C/W when mounted on a 0.5 in2 pad of 2 oz. copper.
b) 125 C/W when mounted on a 0.02 in2 pad of 2 oz. copper.
c) 135 C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
100 RDS(ON) LIMIT 10 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 o o
30 SINGLE PULSE 100s 1ms 25 20 15 10 5 0 0.01 0.1 1 10 100 1000 RJA = 135 C/W TA = 25 C o o
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
FDS6982, Rev. D1
FDS6982
Typical Characteristics: Q1 & Q2
(continued)
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
r(t), NORMALIZED EFFECTIVE
R JA (t) = r(t) * R JA R JA = 135C/W
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t1 /t2
10 100 300
Figure 21. Transient Thermal Response Curve.
FDS6982, Rev. D1
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
