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March 2013
FQP5N60C / FQPF5N60C
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
4.5 A, 600 V, RDS(on) = 2.5 (Max) @VGS = 10 V, ID = 2.25 A Low Gate Charge (Typ. 15 nC) Low Crss (Typ. 6.5 pF) 100% Avalanche Tested
!
!
G! G DS
#
! !
"
TO-220
FQP Series
GD S
TO-220F
FQPF Series
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
33 0.26
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP5N60C 1.25 0.5 62.5 FQPF5N60C 3.79 -62.5 Unit C/W C/W C/W
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Electrical Characteristics
Symbol Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance
2.0 ---
-2.0 4.7
4.0 2.5 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---515 55 6.5 670 72 8.5 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 4.5A, VGS = 10 V
(Note 4, 5)
--------
10 42 38 46 15 2.5 6.6
30 90 85 100 19 ---
ns ns ns ns nC nC nC
------
---300 2.2
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
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Typical Characteristics
10
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
150 C -55 C
10
0
25 C
10
-1
10
-2
10
-1
-1
10
10
10
10
10
5
VGS = 10V
10
VGS = 20V
1
% Note : TJ = 25$
150$ 25$
10
-1
0 0 2 4 6 8 10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
800
10
Ciss
VDS = 480V
Capacitance [pF]
600
Coss
400
% Notes ; 1. VGS = 0 V 2. f = 1 MHz
200
Crss
2
% Note : ID = 4.5A
0 -1 10
10
10
12
16
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Typical Characteristics
(Continued)
1.2
3.0
2.5
1.1
2.0
1.0
1.5
1.0
% Notes : 1. VGS = 10 V 2. ID = 2.25 A
0.9
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
10 s 100 s 1 ms
10
100 s 1 ms
10
10 ms 100 ms
10
0
DC
10
10 ms 100 ms DC
10
-1
10
-1
10
-2
10
10
10
10
10
-2
10
10
10
10
0 25
50
75
100
125
150
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Typical Characteristics
(Continued)
(t), T h e rm a l R e s p o n s e
10
D = 0 .5
0 .2 0 .1
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
JC
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
( t) , T h e r m a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
% N o te s : 1 . Z ( J C ( t) = 3 .7 9 $ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z ( J C ( t)
10
-1
0 .0 2 0 .0 1
( JC
PDM
s i n g le p u ls e
10
-2
t1 t2
10
-3
10
-5
10
-4
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
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VGS
DUT
3mA
Charge
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
L VDS ID RG DUT
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp
10V
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DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
VGS ( Driver )
10V
I SD ( DUT )
IRM
Body Diode Reverse Current
VDS ( DUT )
VSD
VDD
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Mechanical Dimensions
TO - 220
Dimensions in Millimeters
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Package Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
2.76 0.20
9.40 0.20
Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation FQP5N60C / FQPF5N60C Rev. C0
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15.87 0.20
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2.
A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I64
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