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The importance of semiconductor quantum dots lies primarily in their tune ability and sensitivity to external parameters as electrons

are confined in all dimensions. QDs provide the most desirable characteristics of atom-like discrete energy levels with delta-function DOS and efficient overlap of electron-hole wave functions. These advantages provide QD optoelectronic devices significant performance advantages and unique characteristics. 1. Discrete energy spectrum reduces phonon coupling for high temperature stability 2. Higher tolerance for defects and radiation due to electron and holes localization; 3. Tunable wavelength of emission and absorption by changing QD size reduces dependence on materials (heterostructure band gap). 4. efficient overlap of carrier wave functions give rise to high gain and high differential gain in QD lasers 5. Large gain and differential gain enable low threshold current density J th and large output power The use of InN and its alloyswith GaN and AlN makes it possible to extend the emission of nitride-based optoelectronic devices (LED, LASER) from ultraviolet to near infrared region. With the recent discovery that the bandgap of InN is about ~0.64eV [2], InN based IIInitrides became materials of interest for the researchers especially because of their application in most of the near infrared optical and optoelectronic applications. Calculating confinement energy of InN and InN based III-Nitrides it is possible to choose the right material composition for obtaining photon emission at desired wavelength with greater precision. Non-toxic and environmental friendly 1. Promising for optoelectronic devices. 2. Band gap of about ~ 0.64 eV 3. Designing almost all near infrared optoelectronic device. 4. Suitable for application to practical devices. 5. Low cost optoelectronic Quantum confinement causes the ground quantized energy level to shift from the band edge (both for electrons and holes) thus the actual energy of transition becomes E0 = Eg + Ee + Eh

Where, Eg = Bulk band gap Ee = Shift in electrons ground state from the band edge (Confinement energy of electron) Eh = Shift in holes ground state from the band edge (Confinement energy of hole) We have followed different method to obtain the values of Ee & Eh 1. Graphical solution of Schrdinger equation to calculate Ee (The solution for Ee can also be achieved by finite difference method but the method offers some discrete value in a probabilistic manner where the correlations between the values are poor when the number of point considered is small but consideration of large number of points would make the computation complex and time consuming. On the other hand graphical solution technique let us know and eve visualize the pattern that how quantized level varies and most importantly provide us solution with greater accuracy in less time) 2. Luttinger Khons 44 Hamiltonian for Solving Schrdinger equation to calculate Eh ( In this case graphical solution wouldnt stay good as we have to consider the effect of both light hole and heave hole with their different effective mass of course. Graphical method here would provide more time consuming and complex way to calculate the ground quantized energy level of holes. This is why we choose Luttinger Khons 44 Hamiltonian for Solving Schrdinger equation to calculate Eh ) Graphically solving 1D Schrdinger equation the value of (xai) was determined. Since is a function of Ee it is possible to calculate the value of Ee by knowing the value of . The value of Ee designates the confinement energy of the conduction band for electrons. On the other hand, determining the eigenvalues of the Luttinger-Khons Hamiltonian matrix confinement energy of the valance band for both heavy and light holes was determined. These two confinement energies added with bulk energy gap gives the actual energy of transition of electrons from conduction band to valance band.

Turning now to the computational evidence of dependency of confinement energy on dot size; figure 3, shows how confinement energy of electron changes with the change in base length of InN QDs, for some fixed values of EC (0.1 eV, 0.15 eV and 0.20 eV). With the rise in base length of quantum dot, confinement energy of electrons decreases. Another important finding was that at a very low value of dot base length the confinement potential is almost equal to the band offset (EC). For 3 distinctive value of QD base length (5 nm, 6 nm and 7 nm) the dependency of confinement energy of electrons in the conduction band on band-offset ECis shown in figure 4. Ground quantized energy level of electrons shifts up with the increase in EC and therefore the confinement energy increases. Confinement energy becomes very prominent when the band-offset is large. Also the smallest dot provides highest confinement at any particular value of EC. On the other hand calculated values of ground quantized energy level of holes with the alteration of dot size and EV are graphically represented above. Though in almost all previous studies it was the most neglecting parameter because of computation complexity and least contribution to the total energy of transition, we computed confinement potential for holes and plotted it against base diameter of QDs in figure 5. Ground quantized energy level shifts away from the band edge with decreasing value of base length and become more prominent for smaller dot size. In figure 6, for 2 different value of QD base length (5 nm and 6nm); computed confinement energy was plotted against the variation in band-offset, EVin valance band. Here also we found that increasing value of EVincreases the confinement energy. The variation in confinement energy with the change in band-offset is not very sharp here as was in conduction band, which indicates that confinement energy of holes is relatively less dependent on the bandoffset. The evidence from this study suggests that, the total energy of confinement for heterostructures composed of same dot material and barrier material may not be unique, as it is a function of dot size. Another striking finding was the dependency of confinement energy on band-offsets, which clarifies that changing barrier material or its composition would also affect the total energy

of transition. It is therefore likely that to obtain the actual energy of transition and hence the wavelength of the light; confinement energies should be determined very precisely. Design considerations of optoelectronic devices especially lasers and LEDs used in optical fiber communication, where wavelength has to be exact to ensure lower attenuation and dispersion, should include the effect of confinement properly. A convenient method of determining ground quantized energy level of electrons and holes was studied. Theoretical computation method has been applied to determine the confinement potential. In addition, confinement energy of InN quantum dot heterostructure was calculated for various dot size and bandoffsets. Variation of confinement energy as a function of dot size, EC and EV was demonstrated, which is important for the designing of InN and InN based III-nitride QD optoelectronic devices. It was done for the first time with an approach to highlight their contribution and to suggest their inclusion in design consideration. Thus the overall theoretical analysis presented, helped precisely determining the confinement energy and taking its effect for more practical device designing

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