7

1a

Figure1.4. (a)Diamondlattice.(b)Zincblende lattice.

Figure1.7. (a)Atetrahedronbond.(b)Schematictwo dimensionalrepresentationofatetrahedronbond.

14

5a

Figure. EnergybandstructuresofSiandGaAs.Circles() indicateholesinthevalencebandsanddots()indicate electronsintheconductionbands.

20

16

10a

Figure1.20. Measuredionizationenergies(ineV)forvarious impuritiesinSiandGaAs.Thelevelsbelowthegapcenterare measured dfrom f the th top t of fthe th valence l band b dand dareacceptor t levelsunlessindicatedbyD fordonorlevel.Thelevelsabove thegapcenteraremeasuredfromthebottomofthe conductionbandandaredonorlevelsunlessindicatedbyA foracceptorlevel. level 8

10b

Figure1.16.

FermidistributionfunctionF(E)versus(E EF)for varioustemperatures. temperatures

Figure1.17. Intrinsicsemiconductor. (a)Schematicbanddiagram diagram.(b)Densityofstates. states (c)Fermidistributionfunction.(d)Carrierconcentration.

18

12a

Figure1.18. IntrinsiccarrierdensitiesinSiandGaAs asa functionofthereciprocaloftemperature.57

24 25

13a

Figure1.24. FermilevelforSiandGaAs asafunctionof temperatureandimpurityconcentration. Thedependence p ofthebandgap g p ontemperature p isshown.9

13b

Figure1.25. ElectrondensityasafunctionoftemperatureforaSi samplewithadonorconcentrationof1015 cm3.

16b

3.1 1 ctor Figure . Schematic Schematicpath pathof ofan anelectron electronin ina asemicond semiconductor. (a)Randomthermalmotion.(b)Combinedmotiondueto randomthermalmotionandanappliedelectricfield.

22 23 24 25

17a

Figure.2.

DriftvelocityversuselectricfieldinSi.8

3.22. velocity versus electric field in Si GaAs Note Figure .2. Drift Drift velocity versus electric field inand Siand GaAs. Note thatforntypeGaAs,thereisaregionofnegativedifferential mobility.8,9

17b

3.23. distributions under various conditions of of Figure .2. Electron Electron distributions under various conditions electricfieldsforatwovalleysemiconductor.

Figure2.25.

Onepossiblevelocityfieldcharacteristicofatwo valleysemiconductor.

18a

Figure2.2. Electronmobilityinsiliconversustemperaturefor variousdonorconcentrations.Insertshowsthetheoretical temperaturedependenceofelectronmobility.3

18b

Figure2.3. Mobilities anddiffusivitiesinSiandGaAs at300Kasa functionofimpurityconcentration.3

18d

Figure2.4. Conductionprocessinanntypesemiconductor (a)atthermalequilibriumand(b)underabiasingcondition.

19a

Figure2.6. Measurementofresistivityusingafourpointprobe.3

Figure2.7. Resistivityversusimpurityconcentration3 forSiand GaAs.

1020