Silicon Photonics

Silicon Photonics Opportunity, Applicatoins & Recent Results
Director Photonics Technology Lab Intel Corporation
Mario Paniccia,
Intel Corporation CREOL April 1 2005
Agenda
Opportunity for Silicon Photonics Copper vs optical Recent advances Intels SP Research Recent results
Intels Silicon Laser
Summary
*Third party marks and brands are the property of their respective respective owner
ELECTRONICS: Moores Law Scaling

MIPS
10000
Processor Pentium III Processor Pentium II Processor Pentium Pro Processor Pentium 4
$/MIPS
100
1000
10
100
Pentium Processor Intel486TM DX CPU Intel386TM DX Microprocessor Microprocessor
10
0.1 MIPS $/MIPS 0.01 1995 1997 1999 2001
1 1985 1987 1989 1991 1993
Integration & increased functionality Volume economics faster, better, cheaper

3
The Opportunity of Silicon Photonics

Take advantage of enormous ($ billions) CMOS infrastructure, process learning, and capacity
Available tools: litho requirements typically >90nm Draft continued investment going forward
Potential to integrate multiple optical devices Micromachining could provide smart packaging Potential to converge computing & communications
Industry standard silicon manufacturing processes could enable integration, bring volume economics to optical. enable integration, bring to optical. To benefit from existing infrastructure optical wafers must run alongside product.. i.e CMOS fabrication compatible..
4
Today's High Speed Interconnects

Primarily Primarily Optical Copper
Metro & Long Haul
0.1 80 km
Chip to Chip
1 50 cm
Billions
Board to Board
50 100 cm
Volumes
Rack to Rack
1 to 100 m
Millions
Thousands Decreasing Distances
Need to drive volume economics to drive optical closer to chip

5
Copper Approaching Limits

Simulation of 20 channel transmitter w/ equalization
0
Channel Attenuation [dB]
-10 -20 -30 -40 -50 0 10
18G
Low Loss Ro4350 Standard FR4 20 30 40
Red Zone = Eye Closes
12G
Data Rate [Gb/s]
Copper scaling more challenging. Headroom getting squeezed.

Howard Heck
6
Electrical to Optical
Enterprise
Distance: 0.1-10km
10G
Silicon Photonics?
10G
>= 40G
Rack-Rack
Distance: 1-100m
OPTICAL
40G Optical Tech
3.125G
Board-Board
Distance: 50-100cm
3.125G
5-6G
10G Copper Tech 10G
Chip-Chip
Distance: 1-50cm
ELECTRICAL
3.125G 5-6G
Tra nsit ion Z on e

15-20G
20G
2005
2010+
7
Transition driven by cost
The Photonic Dilemma

Fiber has much more bandwidth than copper
However, it is much more expensive..
Photonics: The technology of emission, transmission, control and detection of light (photons) aka fiberoptics & opto-electronics Today: Most photonic devices made with exotic materials, expensive processing, complex packaging Silicon Photonics Vision: Research effort to develop photonic devices using silicon as base material and do this using standard, high volume silicon manufacturing techniques in existing fabs Benefit: Bring volume economics to optical communications
9
Agenda
Intels Silicon Laser**
Summary
10
Silicon Pros and Cons

+ + + +
Transparent in 1.3-1.6 m region CMOS fabrication compatibility Low cost High-index contrast small footprint No electro-optic effect No detection in 1.3-1.6 m region High index contrast coupling Lacks efficient light emission
Silicon will not win with passive devices.. Must produce active devices that add functionality
11
Silicon Photonics Breakthroughs

Are Accelerating
Raman Net Pulsed Gain
9/6: Intel 9/20: Cornell 9/29: UCLA 9/29: CUHK Raman Conversion
UCLA
SRS
UCLA
Si LEDs
STM, Trento
30GHz SiGe Photodetector

IBM
Integrated APD+TIA
UT
Low Loss Strip

MIT
Inverted Taper
NTT, Cornel
Modeled GHz PIN Modulator

Surrey, Naples
GHz MOS Modulator

Intel
PBG WG <25dB/cm
IBM
PBG WG <7dB/cm
IBM, FESTA, NTT
CW Raman lasing Feb 05
2001
2002
2003
2004
Progress In Recent Years Is Accelerating still not there

12
Agenda
Intels Silicon Laser**
Summary
13
Intels Silicon Photonics Research

1. Develop photonic building blocks in silicon
1) Light Source 2) Guide Light 3) Modulation
Waveguides devices
First Continuous Silicon Laser

(Nature 2/17/05)
4) PhotoPhoto-detection
5) Low Cost Assembly

Passive Align
6) Intelligence
CMOS
1GHz (Nature 04) 4 Gb/s (05)
SiGe Photodetectors
Mirror
First Prove that silicon is viable material for photonics

14
Packaging
Approximate Optical Product Cost Breakdown
Packaging 1/3 Device 1/3 Testing 1/3

In addition to device costs, packaging and testing costs must drop with to enable high volume photonics
15
Micromachining for Packaging

U-Grooves
Use standard pick and place technologies along with litho defined silicon micro-machining
Tapers
Mirror
V-Grooves
Laser Attach
45 Mirrors
Facet Preparation
16

1. Develop photonic building blocks in silicon 2. Integrate increasing functionality directly onto silicon
Integrated in Silicon
Photodetectors Receiver Chip DEMUX Taper
Driver Chip
Passive Align
Lasers
MUX
17

1. Develop photonic building blocks in silicon 2. Integrate increasing functionality directly onto silicon 3. Long term explore monolithic integration
ECL Modulator Filter
Drivers
Multiple Channels
CMOS Circuitry
TIA
Passive Alignment
TIA
Photodetector
18
SILICON LASER
What we announced on Feb 17th
19
The First Laser

Developed by Ted Maiman, published in Nature, August 6, 1960. this ruby laser used a flash lamp as an optical pump
Fully Reflective Mirror
Flash Lamp
Partially Reflective Mirror
LASER BEAM RUBY CRYSTAL ROD
20
Raman:
(Historical Note)
Raman Effect or Raman Scattering: A phenomenon observed in the scattering of light as it passes through a transparent medium; the light undergoes a change in frequency and random alteration in phase due to a change in rotational or vibrational energy of the scattering molecules.
Discovered a material effect that is named after him

Nature published his paper on the effect on March 31, 1928 He received the Nobel prize in 1930 for his discovery
The first laser using the Raman effect was built in 1962 Today Raman based amplifiers are used throughout telecom Most long distance phone calls will go through a Raman amplifier
Typical Raman Amplifier

21
The Raman Effect

Materials
Silicon Indium Antimonide (III-V) Quartz Lithium Niobate (used for modulators) Diamond Glass Fiber (Raman lasers/amps)
Raman gain coefficient (10-8m/MW)
5000
10000
15000
20000
Kilometers of fiber
...
The Raman effect is 10,000 times stronger in silicon than in glass fiber This allows for significant gain in centimeters instead of kilometers
Centimeters of silicon
Fabrication of low-loss silicon waveguides is challenging

22
Raman Gain in Silicon

Silicon Waveguide Pump in Pump out
Pump/probe experiment
Probe in
Probe out
2.5 2.0
Raman Gain and WG loss vs. Input Pump Power

3.5 3 Raman Gain/WG Loss (dB) -0.2 -0.4 Gain-Loss (dB) -0.6 -0.8 -1 -1.2 -1.4 -1.6 0 200 400 Pump Power (mW) 600
Raman Gain WG Loss Loss w/o Pump Gain-Loss
Raman gain (dB)
(b)
1.5 1.0 0.5 0.0
2.5 2
1.5 1
0.5
0 200 400 600 800 1000
Input pump power(mW)
CW Gain Saturation due to TPA induced FCA

23
Two Photon Absorption

In silicon, one infrared photon doesn't have the energy to free an electron e e e e e e e
Free Electron
e e
SILICON WAVEGUIDE
But, occasionally, two photons can knock an electron out of orbit. Free electrons absorb individual photons and cancel Raman gain
24
Overcoming TPA induced FCA

V +
laser beam p-type

silicon electrons
n-type
silicon
Raman Gain
Gain needed to make a laser

oxide intrinsic silicon
Gain limit due to Two Photon Absorption problem
Pump power
25
Effective Carrier lifetime reduction

SiO2 passivation
Output power (mW)
500
Lifetime=16 ns Lifetime=6.8 ns Lifetime=3.2 ns Lifetime=1 ns
Al contact
Si rib waveguide
Al contact
400 300 200 100 0 0
25 V 5V short open
p-region
h
n-region
Buried oxide Si substrate
200
400
600
800 1000 1200
Input power (mW)
PIN Cross-section
TPA coeff ~ 0.5 cm/GW, 0.39 dB/cm, FCA cross sect 1.45e-17 cm^2 @ 1550 nm. The lifetime is used as a fitting parameter
26
CW gain vs. reverse bias voltage

WG= ~1.5um by 1.5um
NET GAIN
NO NET GAIN
Pump =1550 nm
Signal =1686 nm
27
With gain can build Laser:

Silicon Waveguide Cavity
16 mm
Rf V bias n-region Rb
Pump beam Laser output Dichroic coating
SOI rib waveguide
p-region
Broad-band reflective coating
24%/71%
90%
28
2 mm
Experimental setup
Pump power monitor Pump at 1,550 nm 90/10 Tap coupler Optical spectrum analyzer
0 -10 -20 -30 -40 -50 -60 -70 -80 1684 1685 1686 1687 1688 1689 1690 1691 1692
Lensed Polarization fibre controller De-multiplexer
Silicon waveguide
LP filter
Laser output at Dichroic 1,686 nm coating
High reflection coating
90/10 Laser output power meter Tap coupler
29
Experimental Set up
Test chip with 8 laser WGs
Laser chip
30
Typical Lasing Criteria

Threshold behavior: rapid growth in output power when gain > loss Spectral linewidth narrowing: Coherent light emission
31
Threshold, Efficiency, and PIN effect

10.0 9.0 8.0
Laser output (mW)
7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0
25V bias 5V bias 25V slope 5V slope
200
400
600
800
Coupled pump power (mW)
Laser turns on at threshold, when gain per pass in cavity becomes greater than the loss.
32
Spontaneous emission vs. laser spectrum

2.50 2.50 Lasing Lasingsignal signal Spontaneous Spontaneous emmission emmission 2.00 2.00
Spectralpower power(a. (a.u.) u.) Spectral
1.50 1.50
1.00 1.00
Magnified 10^ 5x
0.50 0.50
0.00 0.00 1668.5 1668.5
1669 1669
1669.5 1669.5
1670 1670
1670.5 1670.5
Wavelength Wavelength (nm) (nm)
When lasing, the spectrum becomes much more narrow and much higher in power.
33
Wavelength tuning (comparison)

0 -10
0 -10
pump
1552 nm 1554 nm 1556 nm 1558 nm
Spactral power (dB)
Spactral power (dB)
-20 -30 -40 -50 -60 -70 -80 1680
1548 nm 1550 nm
-20 -30 -40 -50 -60 -70 -80 1542
1548 nm 1550 nm 1552 nm 1554 nm 1556 nm 1558 nm
1685
1690
1695
1700
1547
1552
1557
1562
Laser wavelength (nm)
Laser wavelength (nm)
Silicon Raman laser

Commercial ECDL
34
Potential Applications
35
Communications Applications
PUMP LASER
passively aligned waveguide coupler amplified data beam
Si Raman Amplifier
weak data beam

101110
101110
silicon waveguide (cms)
laser cavity passively aligned
PUMP LASER
Si Multi-Channel Transmitter
modulators
MOD
MUX
MOD MOD MOD
N
splitter
Optical Fiber
Si Raman Modulator
integrated mirrors
36
Covering the Gaps

Different wavelengths require different types of lasers Mid-Infrared very difficult for compact semiconductors Raman Lasers could enable lasers at these wavelengths Applications in sensing, analysis, medicine, and others
2.1m Ho:YAG laser
Compact Semi. Lasers
PUMP LASER
2.9m Er:YAG laser

cascaded mirrors
>2m
Could enable lasers for a variety of applications

37
Summary
Long term true convergence opportunities are with silicon B/W will continue drive conversion of optical into interconnects Tremendous progress from research community Need to continue pushing & improving performance Research breakthrough with CW silicon laser Integration is next set of challenges In order to benefit Technologies must be CMOS fabrication compatible to benefit from HVM & infrastructure
Silicon will not win with individual devices, but with integrated modules that bring increased total functionality & intelligence at a lower cost
38
BACKUP
39
Benefits of Integration
Photonic Integration:
Reduction in interfaces lower loss Reduction in size Simpler assembly, testing, packaging Cost
Optoelectronic Integration:
Reduce parasitics, improved high-freq performance Further size, testing, packaging reductions ? Cost
Integration is only useful if integrated device has benefit (functionality, cost, performance) over discrete devices
40
CMOS Integration Challenges

Film topology Coupling to fiber Contaminating the fab Yield metrology Thermal budgets Heat dissipation Complexity / yield
Optoelectronic Integration
To benefit from existing infrastructure optical wafers must run alongside product, introducing additional pragmatic challenges
41
Surface Topology: Litho vs DOF

Depth of focus (DOF) shrinks as litho improves Many optical devices are much taller than transistors For 0.18m and better, topology exceeds DOF New planarization techniques required for advanced litho
DOF vs. Litho Technology (m)
8m Taper
0.25
0.5 m
0.18
0.35m
0.09
0.2m
Transistor on 90nm
0.9m Rib
0.3m Strip
0.1m gate
42
Fiber Coupling
Taper from (W x H): 10 x 8 m to 2.5 x 2.3 m Assume zero roughness
Tip=0.5 Tip=1.0 Tip=2.0
10
Taper loss (dB)
Coupling from standard fiber to Si waveguides requires special structures (tapers, gratings, etc). For wedge tapers, etch angle as well as the tip lithography impact loss. Sidewall roughness is also a factor
1dB
0.1 80 82 84 86 88
2dB
90
Sidewall angle (degrees)
Source: Intel
Getting light from fibers into silicon waveguides will require couplers. For certain structures litho and etch parameters must be carefully controlled.
43
Yield Metrology
CMOS fabs monitor thousands of parameters across wafer in line Tight control e.g. CMOS gate width held to 10s of angstroms Significant per-wafer cost savings from screening out yield early
In-line wafer level optical probing is very immature Most optical device testing is performed after wafer dicing To truly gain from HVM processing, automated & non-destructive techniques for probing optical devices at the wafer level must be developed
44
Opto-Electronic Integration (cont)

Thermal:
For optoelectronic integration , optical devices must tolerate heat generated by CMOS circuits.
Simulated multi-core thermal map
IO Pads Core Core
Temp C
80-85 75-80 70-75 65-70 60-65
Process compatibility:
@ 10Gb/s CMOS ICs need 90nm technology Silicon Photonic devices may only need ~.25um
Other Logic
Cache
Core Core IO Pads
Yield:
Typical industry IC yields are high, but the process windows are extremely tight. Tweaks to enable opto-electronic integration may effect IC yield
Trade off of yield and process compexity will determine if opto-electrical integration valuable
45
Animation
Click in box while in slide show mode to start
46 Click outside animation box after animation
Extending and Expanding Moores Law

Sensors Mechanical
Discrete
SSI
LSI
VLSI
Wireless
E X P Biological A EXTENDING D Fluidics I N G
Optical
47
Two Photon Absorption in Silicon

Conduction band
Pump =1.55m
Silicon band gap 1.1 eV
Valence band
Two photons can simultaneously hit an atom Combined energy enough to kick free an electron
48

Silicon Photonics

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Silicon Photonics Opportunity, Applicatoins & Recent Results

Director Photonics Technology Lab Intel Corporation

Intel Corporation CREOL April 1 2005

ELECTRONICS: Moores Law Scaling

Pentium Processor Intel486TM DX CPU Intel386TM DX Microprocessor Microprocessor

0.1 MIPS $/MIPS 0.01 1995 1997 1999 2001

1 1985 1987 1989 1991 1993

Integration & increased functionality Volume economics faster, better, cheaper

The Opportunity of Silicon Photonics

Today's High Speed Interconnects

Thousands Decreasing Distances

Need to drive volume economics to drive optical closer to chip

Copper Approaching Limits

Channel Attenuation [dB]

-10 -20 -30 -40 -50 0 10

Red Zone = Eye Closes

Data Rate [Gb/s]

Copper scaling more challenging. Headroom getting squeezed.

10G Copper Tech 10G

Tra nsit ion Z on e

Transition driven by cost

The Photonic Dilemma

However, it is much more expensive..

Silicon Pros and Cons

Silicon Photonics Breakthroughs

30GHz SiGe Photodetector

Low Loss Strip

Modeled GHz PIN Modulator

GHz MOS Modulator

CW Raman lasing Feb 05

Progress In Recent Years Is Accelerating still not there

Intels Silicon Photonics Research

First Continuous Silicon Laser

5) Low Cost Assembly

1GHz (Nature 04) 4 Gb/s (05)

First Prove that silicon is viable material for photonics

Packaging 1/3 Device 1/3 Testing 1/3

Micromachining for Packaging

Intels Silicon Photonics Research

Intels Silicon Photonics Research

The First Laser

Partially Reflective Mirror

LASER BEAM RUBY CRYSTAL ROD

Discovered a material effect that is named after him

Typical Raman Amplifier

The Raman Effect

Fabrication of low-loss silicon waveguides is challenging

Raman Gain in Silicon

Raman Gain and WG loss vs. Input Pump Power

Raman gain (dB)

Input pump power(mW)

CW Gain Saturation due to TPA induced FCA

Two Photon Absorption

Overcoming TPA induced FCA

laser beam p-type

Gain needed to make a laser

Gain limit due to Two Photon Absorption problem

Effective Carrier lifetime reduction

400 300 200 100 0 0

Buried oxide Si substrate

800 1000 1200

Input power (mW)

CW gain vs. reverse bias voltage