2N7000 2N7002

N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET

Features
Type 2N7000 2N7002

VDSS 60 V 60 V

RDS(on) max

ID
3 2 1

< 5 (@10V) 0.35 A < 5 (@10V) 0.20 A

Low Qg Low threshold drive

SOT23-3L TO-92

Application

Switching applications

Description
This Power MOSFET is the second generation of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram

SOT23-3L

TO-92

Table 1.

Device summary
Marking 2N7000G ST2N Package TO-92 SOT23-3L Packaging Bulk Tape and reel

Order codes 2N7000 2N7002

November 2008

Rev 9

1/14
www.st.com 14

Contents

2N7000, 2N7002

Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 4 5

Test circuits

.............................................. 9

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14

2N7000, 2N7002

Electrical ratings

Electrical ratings
Table 2.
Symbol VDS VDGR VGS ID IDM
(1)

Absolute maximum ratings

Value Parameter TO-92 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (pulsed) Total dissipation at TC = 25 C 0.35 1.4 1 60 60 18 0.20 1 0.35 SOT23-3L V V V A A W Unit

PTOT

1. Pulse width limited by safe operating area

Table 3.
Symbol Rthj-amb TJ Tstg
1.

Thermal data
Value Parameter TO-92 Thermal resistance junction-ambient max Operating junction temperature - 55 to 150 Storage temperature C 125 SOT23-3L 357.1 (1) C/W Unit

When mounted on 1inch FR-4, 2 Oz copper board.

3/14

Electrical characteristics

2N7000, 2N7002

Electrical characteristics
(TCASE = 25 C unless otherwise specified) Table 4.
Symbol V(BR)DSS

On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS =0 VDS = max rating VDS = max rating, TC = 125 C VGS = 18 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.5 A 1 2.1 1.8 2 Min. 60 1 10 100 3 5 5.3 Typ. Max. Unit V A A nA V

IDSS

IGSS VGS(th) RDS(on)

Table 5.
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 10 V , ID = 0.5 A Min. Typ. 0.6 43 20 6 5 15 7 8 1.4 0.8 0.5 2 Max. Unit S pF pF pF ns ns ns ns nC nC nC

VDS = 25 V, f = 1 MHz, VGS = 0

VDD = 30 V, ID = 0.5 A RG = 4.7 VGS = 4.5 V (see Figure 16) VDD = 30 V, ID = 1 A, VGS = 5 V (see Figure 17)

1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%.

4/14

2N7000, 2N7002

Electrical characteristics

Table 6.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM

Source drain diode

Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 1 A, VGS = 0 32 25 1.6 Test conditions Min. Typ. Max. 0.35 1.40 1.2 Unit A A V ns nC A

Reverse recovery time ISD = 1 A, di/dt = 100 A/s, Reverse recovery charge VDD = 20 V, Tj = 150 C Reverse recovery current (see Figure 18)

1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%

5/14

Electrical characteristics

2N7000, 2N7002

2.1
Figure 2.

Electrical characteristics (curves)

Safe operating area for TO-92 Figure 3. Thermal impedance for TO-92

Figure 4.

Safe operating area for SOT23-3L

Figure 5.

Thermal impedance for SOT23-3L

Figure 6.

Output characteristics

Figure 7.

Transfer characteristics

6/14

2N7000, 2N7002 Figure 8. Transconductance Figure 9.

Electrical characteristics Static drain-source on resistance

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage vs temperature

Figure 13. Normalized on resistance vs temperature

7/14

Electrical characteristics Figure 14. Source-drain diode forward characteristics

2N7000, 2N7002 Figure 15. Normalized BVDSS vs temperature

8/14

2N7000, 2N7002

Test circuits

Test circuits
Figure 17. Gate charge test circuit

Figure 16. Switching times test circuit for resistive load

VDD 12V
2200

47k 100nF

1k

RL VGS VD RG PW D.U.T.

3.3 F

VDD Vi=20V=VGMAX
2200 F

IG=CONST 2.7k 47k PW 1k

100

D.U.T. VG

AM01468v1

AM01469v1

Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit

A D G S B 25 D.U.T.

A FAST DIODE B

A L=100H B D G 3.3 F 1000 F

VD

2200 F

3.3 F

VDD

VDD

ID

RG

Vi

D.U.T.

Pw
AM01470v1 AM01471v1

Figure 20. Unclamped inductive waveform

Figure 21. Switching time waveform

V(BR)DSS VD

ton tdon tr

toff tdoff tf

90% IDM

90% 10%

ID VDD VDD

10%

VDS 90%

VGS

AM01472v1

10%

AM01473v1

9/14

Package mechanical data

2N7000, 2N7002

Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

10/14

2N7000, 2N7002

Package mechanical data

Table 7.
Dim.

TO-92 mechanical data

mm Min. Typ. Max. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 5

A b D E e e1 L R S1 W V

4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41

Figure 22.

TO-92 drawing

0102782 D

11/14

Package mechanical data

2N7000, 2N7002

Table 8.
Dim.

SOT23-3L mechanical data

mm Min. Typ. Max. 1.25 0 1.00 0.60 2.826 2.60 1.526 0.95 1.90 0.35 0.59 0.25 0.05 0.05 3 6 0.20 7 10 0.60 0.15 1.20 0.70 3.026 3.00 1.726

A A1 A2 A3 D E E1 e e1 L L1 L2 R R1 K K1

Figure 23. SOT23-3L drawing

Top view

Bottom view

8162275_Rev_A

12/14

2N7000, 2N7002

Revision history

Revision history
Table 9.
Date 09-Oct-2004 22-Jun-2004 06-Apr-2005 19-Apr-2005 26-Apr-2005 28-Apr-2005 19-Jun-2006 03-Sep-2007

Document revision history

Revision 1 2 3 4 5 6 7 8 First document Complete document New typ and max value inserted for Vgs(th) The document has been reformatted New Pin configuration for TO-92 Pin configuration change again New template, no content change Corrected marking on first page Updated Table 7: TO-92 mechanical data and Figure 22: TO-92 drawing. Updated Table 8: SOT23-3L mechanical data and Figure 23: SOT23-3L drawing. Changes

04-Nov-2008

13/14

2N7000, 2N7002

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (ST) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to STs terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN STS TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USERS OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com

14/14