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by TIP41A/D

SEMICONDUCTOR TECHNICAL DATA

 
 
 

  

 
. . . designed for use in general purpose amplifier and switching applications.



CollectorEmitter Saturation Voltage

VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
CollectorEmitter Sustaining Voltage
VCEO(sus) = 60 Vdc (Min) TIP41A, TIP42A
VCEO(sus) = 80 Vdc (Min) TIP41B, TIP42B
VCEO(sus) = 100 Vdc (Min) TIP41C, TIP42C
High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package

*MAXIMUM RATINGS
Rating

Symbol

TIP41A
TIP42A

TIP41B
TIP42B

TIP41C
TIP42C

Unit

CollectorEmitter Voltage

VCEO

60

80

100

Vdc

CollectorBase Voltage

VCB

60

80

100

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

Collector Current Continuous

Peak

IC

6
10

Adc

Base Current

IB

2.0

Adc

Total Power Dissipation

@ TC = 25_C
Derate above 25_C

PD

65
0.52

Watts
W/_C

Total Power Dissipation

@ TA = 25_C
Derate above 25_C

PD

2.0
0.016

Watts
W/_C

62.5

mJ

TJ, Tstg

65 to + 150

_C

Unclamped Inductive Load Energy (1)

Operating and Storage Junction
Temperature Range

 
 
 
*Motorola Preferred Device

6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 80 100 VOLTS
65 WATTS

CASE 221A06
TO220AB

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RJA

62.5

_C/W

Thermal Resistance, Junction to Case

RJC

1.92

_C/W

(1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 .

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

 
 
 
 
 
 

v
v

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C

VCEO(sus)

60
80
100

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)

TIP41A, TIP42A
TIP41B, TIP41C
TIP42B, TIP42C

ICEO

0.7
0.7
0.7

mAdc

400
400
400

IEBO

1.0

mAdc

hFE

30
15

75

VCE(sat)
VBE(on)

1.5

Vdc

2.0

Vdc

fT
hfe

3.0

MHz

20

Adc

ICES

TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (1)

DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

CollectorEmitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)

BaseEmitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
300 s, Duty Cycle

PD, POWER DISSIPATION (WATTS)

(1) Pulse Test: Pulse Width

TA
4.0

TC
80

3.0

60

2.0

40

1.0

20

2.0%.

TC

TA

20

40

60
100
80
T, TEMPERATURE (C)

120

140

160

Figure 1. Power Derating

VCC
+ 30 V
RC

0.7
0.5

RB
9.0 V

tr, tf 10 ns
DUTY CYCLE = 1.0%

D1
4 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA

Figure 2. Switching Time Test Circuit

t, TIME ( s)

SCOPE

+11 V
0

TJ = 25C
VCC = 30 V
IC/IB = 10

1.0

25 s

2.0

0.3
0.2

tr

0.1
0.07
0.05
0.03
0.02
0.06

td @ VBE(off) 5.0 V

0.1

0.4 0.6
1.0
0.2
2.0
IC, COLLECTOR CURRENT (AMP)

4.0

Figure 3. TurnOn Time

Motorola Bipolar Power Transistor Device Data

6.0

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

 
 
 
 
 
 
1.0
0.7
0.5

D = 0.5

0.3

0.2

0.2

0.1
0.1
0.07
0.05

0.02
0.03
0.02

0.01
SINGLE PULSE

0.01
0.01

0.02

0.05

P(pk)

ZJC(t) = r(t) RJC

RJC = 1.92C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) ZJC(t)

0.05

1.0

0.2

1.0

0.5

2.0
5.0
t, TIME (ms)

10

20

t1

t2

DUTY CYCLE, D = t1/t2

100

50

200

1.0 k

500

Figure 4. Thermal Response

10
IC, COLLECTOR CURRENT (AMP)

0.5 ms
5.0
1.0 ms

3.0
2.0
1.0
0.5
0.3
0.2

TJ = 150C
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25C
(SINGLE PULSE)
CURVES APPLY BELOW RATED VCEO

5.0 ms

TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C

0.1
5.0

There are two limitations on the power handling ability of a

transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150 _ C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

40
10
20
60
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

80 100

Figure 5. ActiveRegion Safe Operating Area

5.0

300

ts

t, TIME ( s)

1.0

TJ = 25C

TJ = 25C
VCC = 30 V
IC/IB = 10
IB1 = IB2

200
C, CAPACITANCE (pF)

3.0
2.0

0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06

tf

Cib
100
70

Cob

50

0.1

0.2
0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)

Figure 6. TurnOff Time

Motorola Bipolar Power Transistor Device Data

4.0

6.0

30
0.5

1.0

2.0 3.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)

30

50

Figure 7. Capacitance


 
 
 
 
 
 

hFE, DC CURRENT GAIN

300
200

VCE = 2.0 V
TJ = 150C

100
70
50

25C

30
20
10
7.0
5.0
0.06

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

500

55C

0.1

0.2 0.3 0.4 0.6

1.0
2.0
IC, COLLECTOR CURRENT (AMP)

4.0

2.0
TJ = 25C
1.6

1.2

IC = 1.0 A

0.4

0
10

6.0

20

V, TEMPERATURE COEFFICIENTS (mV/C)

1.2
VBE(sat) @ IC/IB = 10

0.8

VBE @ VCE = 4.0 V

0.4
VCE(sat) @ IC/IB = 10
0.1

0.2 0.3 0.4

0.6

1.0

2.0 3.0 4.0

6.0

IC, COLLECTOR CURRENT ( A)

1000

*APPLIES FOR IC/IB hFE/4

+ 1.5
+ 1.0
+ 0.5

+ 25C to + 150C

* VC FOR VCE(sat)

55C to + 25C

0.5

+ 25C to + 150C

1.0
VB FOR VBE

1.5

55C to + 25C

2.0
2.5
0.06

0.1

0.2 0.3

0.5

1.0

2.0 3.0 4.0

Figure 10. On Voltages

Figure 11. Temperature Coefficients

VCE = 30 V
TJ = 150C
100C
25C

100
IC = ICES

101
REVERSE

103
0.3 0.2 0.1

+ 2.0

IC, COLLECTOR CURRENT (AMP)

103

500

IC, COLLECTOR CURRENT (AMP)

FORWARD

+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6

+ 0.7

R BE , EXTERNAL BASEEMITTER RESISTANCE (OHMS)

V, VOLTAGE (VOLTS)

1.6

102

50
100
200 300
IB, BASE CURRENT (mA)

+ 2.5
TJ = 25C

101

30

Figure 9. Collector Saturation Region

2.0

102

5.0 A

0.8

Figure 8. DC Current Gain

0
0.06

2.5 A

6.0

10 M
VCE = 30 V
1.0 M

IC = 10 x ICES
IC ICES

100 k

10 k

IC = 2 x ICES

1.0 k

0.1 k

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
20

40

60

80

100

120

140

160

VBE, BASEEMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector CutOff Region

Figure 13. Effects of BaseEmitter Resistance

Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 
PACKAGE DIMENSIONS

T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

STYLE 1:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

BASE
COLLECTOR
EMITTER
COLLECTOR

CASE 221A06
TO220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
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Motorola Bipolar Power Transistor Device Data

*TIP41A/D*

TIP41A/D

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