College of Engineering Ateneo de Naga University

Activity 1 Diode Characteristic and Biasing

Name: John Joshua F. Montaez Section: GE31 Date Performed: 26 June 2012 Date Submitted: ____________

Name of Laboratory Partner: Carmelyn A. Borja and Jessa M. Castillo Laboratory Instructor: Engr. Anacleto Casimiro, MS ECE

RESULTS AND ANALYSIS Table 1 Diode Specification Product Number: Continuous Forward Current: Peak Inverse Voltage: Table 2 Diode Curve Diode Voltage 0V 0.104V 0.211V 0.33V 0.48V 0.46V 0.52V 0.54V 0.57V 0.58V 0.59V 0.63V 0.64V 0.67V 0.69V Diode and Resistor Current 0A 0A 0A 0.0272mA 0.0796mA 0.447mA 0.578mA 1.02mA 1.36mA 1.68mA 2.44mA 4.26mA 8.13mA 8.72mA 12.31mA Resistor Voltage 0V 0.000069V 0.005V 0.005.89mV 0.0169mV 0.09167mV 0.12556mV 0.2219mV 0.2934mV 0.36V 0.58V 0.93V 1.79V 1.93V 2.68V 1N4001

Supply Voltage 0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3

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OBSERVATION AND ANALYSIS:

When the circuit is subjected to the increasing voltage supply, say from 0.1 V up to 0.6V, the voltage of the diode is approximately equal to the difference of the voltage supply and the voltage drop across the resistor because the voltage across the diode, if you take off the diode, does not exceeds the operating voltage of the diode. Furthermore, the current passing to both the resistor and diode is approximately 0 A, since the circuit is like in the state of being open this is because of the state of the diode. But when the supply voltage increases from 0.7V to 3V, the voltage is almost giving constant values. On the other hand the current increase as the supply voltage increases starting from 0.7V. This is because the diode is already assuming the forward biased region.

Table 3 Diode Circuit VAB Fig. 2 Fig. 3 Fig. 4 Fig. 5 Fig. 6 Fig. 7 5 5 -3 -3 -1 2.01 States of Diode On Off Off On Off On Diode Voltage 0.656V 4.96V 273.1mV 3.104V 1.7mV 668.262mV Diode Current 4.35mA 0 0 1.17mA 0 1.66mA Bias Condition Forward Reversed Reversed Forward Reversed Forward

OBSERVATION: It is necessary to determine VAB because it will us a clue as to whether the diode will act in the reverse or forward bias region. The position of the anode and cathode with respect to the voltage supply plays a major role to the state of the diode. In fig. 2, the anode is more positive than that of the cathode thus it is in the forward biased region. In fig. 5 and fig.7, determining VAB we observe that it is greater to the voltage of the diode in which it is expected to operate, thus it is in the forward biased region.

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On the other hand, consider fig. 3, it is observed that the anode is more negative to the cathode, thus it exhibits the state of the diode in the reversed biased region. Consider as well fig. 4 and fig 6. , determining VAB we observe that it is greater to the voltage of the diode in which it is expected to operate but position of the cathode and anode makes the difference to both fig. 5 and fig.7 , thus it is in the reversed biased region. Generalization: The diode can be biased in the forward and reverse region. We can say that the diode is in the forward biased region if the anode is more positive with respect to the cathode, and in the reversed biased region, if otherwise. In the forward biased region the diode current will increase exponentially with increase in voltage across the diode. In the reverse biased region the diode current is very small reverse saturation current until zener breakdown is reached and current will flow in the opposite direction through the diode.

Table 4 Faults 1. Normal Condition 2. R3 short 3. R3 open 4. R2 short 5. R2 open 6. R1 short 7. R1 opens 8. D1 open 9. D2 open VO condition (in terms of VCC)

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