CHENMKO ENTERPRISE CO.

,LTD
SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

CHM9435AJPT

CURRENT 5.3 Ampere

FEATURE
* Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability.
1

SO-8
4.06 (0.160) 3.70 (0.146)
8

CONSTRUCTION
* P-Channel Enhancement

5.00 (0.197) 4.69 (0.185)

4 5

.51 (0.020) .10 (0.012) 1.27 (0.05)BSC

MARKING
* 9435A

1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002)

.25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228)

CIRCUIT

D D

S S

Dimensions in millimeters

SO-8

Absolute Maximum Ratings

Symbol Parameter

TA = 25C unless otherwise noted

CHM9435AJPT

Units

VDSS VGSS

Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous

-30

V V

20
-5.3

ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
(Note 3)

A -20 2500 -55 to 150 -55 to 150 mW C C

Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting

Thermal characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W
2005-02

RATING CHARACTERISTIC CURVES ( CHM9435AJPT )

Electrical Characteristics T
Symbol Parameter
A

= 25C unless otherwise noted

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BVDSS IDSS I GSSF I GSSR

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage

VGS = 0 V, ID = -250 A VDS = -24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V

-30 -1 +100 -100

V A nA nA

ON CHARACTERISTICS

(Note 2)

VGS(th) RDS(ON) g FS

Gate Threshold Voltage Static Drain-Source On-Resistance

VDS = VGS, ID = -250 A VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A

-1 44 74 4 7.0

-3 50 90

V m S

Forward Transconductance

VDS = -15V, ID = -5.3A

SWITCHING CHARACTERISTICS (Note 4)

Qg Q gs Q tr t off tf
gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time

VDS=-15V, ID=-5.3A VGS=-10V V DD= -15V I D = -1.0A , VGS = -10 V RGEN= 6

22.5 2.0 6.0 19 9 74 36

29 nC

t on

26 13 105 50 nS

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS V SD

Drain-Source Diode Forward Current

(Note 1)

-1.9 -1.3

A V

Drain-Source Diode Forward Voltage I S = -5.3A , VGS = 0 V (Note 2)

RATING CHARACTERISTIC CURVES ( CHM9435AJPT )

Typical Electrical Characteristics

Figure 1. Output Characteristics

25

Figure 2. Transfer Characteristics

20

V G S =- 1 0 V
I D , DRAIN CURRENT (A)
-9.0V -8.0V -7.0V

I D , DRAIN CURRENT (A)

20

VG S =- 6 . 0 V

16

15

TJ=-55C
12

10

VG S =- 5 . 0 V VG S =- 4 . 0 V VG S =- 3 . 0 V
0 0.5 2.0 2.5 1.0 1.5 V DS , DRAIN- TO- SOURCE VOLTAGE (V) 3.0

TJ=125C
0 0 0.5 VGS

TJ=25C
2.5 3.0

2.0 1.0 1.5 , GATE-TO-SOURCE VOLTAGE (V)

Figure 3. Gate Charge

10 2.2 VDS=-15V ID=-5.3A 8

Figure 4. On-Resistance Variation with Temperature

VGS=-10V ID=-5.3A

VGS , GATE TO SOURCE VOLTAGE (V)

DRAIN-SOURCE ON-RESISTANCE

1. 9

R DS(on) , NO RMALIZED

1. 6

1. 3

1. 0

0. 7

0 0 4 8 12 16 Qg , TOTAL GATE CHARGE (nC) 20 24

0. 4 -100

-50

0 50 100 TJ , JUNCTION T EMPERATURE (C)

150

200

Figure 5. Gate Threshold Variation with Temperature

1. 3 1. 2 VDS=VGS ID=250uA

Vth , NORMALIZED GATE-SOURCE

THRESHOLD VOLTAGE

1. 1 1.0 0.9 0. 8

0. 7 0. 6 -50

-25

0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C)

125

150