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PROFET BTS 307

Smart Highside Power Switch


Features
Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection Fast demagnetization of inductive loads Reverse battery protection1) Open drain diagnostic output Open load detection in OFF-state CMOS compatible input Loss of ground and loss of Vbb protection Electrostatic discharge (ESD) protection

Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO)

Vbb(AZ) Vbb(on) RON IL(ISO)

65 V 5.8 ... 58 V 250 m 1.7 A

TO-220AB/5
5 1 Straight leads

5
5 1

Standard

SMD

Application

C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads Most suitable for inductive loads Replaces electromechanical relays, fuses and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

+ V bb

Voltage source

Overvoltage protection

Current limit

Gate protection

V Logic
Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads
OUT

IN

Temperature sensor

Load

ST

Short circuit detection


GND

PROFET
Load GND

1
Signal GND

1)

With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.

Semiconductor Group

08.96

BTS 307
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback Output to the load

Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection2) Tj Start=-40 ...+150C Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Electrostatic discharge capability (ESD) IN, ST: (Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6

Symbol Vbb Vbb

Values 65 40 self-limited -40 ...+150 -55 ...+150 50 1.0 tbd (>1.0) -0.5 ... +36 2.0 5.0

Unit V V A C W kV V mA

IL Tj Tstg Ptot VESD VIN IIN IST

Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol chip - case: RthJC
junction - ambient (free air):

RthJA

min ---

Values typ max -2.5 -75

Unit K/W

2)

Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with higher Vbb.

Semiconductor Group

BTS 307 Electrical Characteristics


Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified

Symbol

Values min typ max

Unit

Load Switching Capabilities and Characteristics

Tj=25 C: Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=32 V, VIN= 0, see diagram page 7 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Vbb = 20V, Tj =-40...+150C Slew rate on, 10 to 30% VOUT, RL = 12 , Vbb = 20V, Tj =-40...+150C Slew rate off, 10 to 30% VOUT, RL = 12 , Vbb = 20V, Tj =-40...+150C

On-state resistance (pin 3 to 5) IL = 2 A, Vbb = 24 V

RON

-1.4

220 390 1.7 --

250 500 -1.1

IL(ISO) IL(GNDhigh)

--

A mA s V/s V/s

ton toff
dV /dton -dV/dtoff

15 20 ---

-----

80 70 6 7

Operating Parameters Tj =-40...+150C: Operating voltage 3) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Undervoltage restart of charge pump Tj =-40...+150C: see diagram page 11 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage protection4) Ibb=40 mA Standby current (pin 3), VIN=0 Tj=-40...+150C: Operating current (Pin 1)5), VIN=5 V

Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp)


Vbb(under)

5.8 2.7 ---65

---5.6 0.4 70

58 4.7 4.9 7.5 ---

V V V V V V A

Vbb(AZ) Ibb(off) IGND

---

10 2.2

50 --

mA

3) 4) 5)

At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V

Semiconductor Group

BTS 307
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified

Symbol

Values min typ max

Unit

Protection Functions Initial peak short circuit current limit (pin 3 to 5) Tj =-40C: Tj =25C: Tj =+150C: Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 6) Diagnostic Characteristics Open load detection current
(included in standby current Ibb(off))

IL(SCp)
--4.0 -10 ---10 -19 --75 --32 A

VON(CL) Tjt Tjt -Vbb

59 150 ---

V C K V

IL(off) Tj=-40..150C: VOUT(OL) VON(SC)

-2.4 --

6 3 2.5

-4 --

A V V

Open load detection voltage Short circuit detection voltage (pin 3 to 5)

6)

Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

Semiconductor Group

BTS 307
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified

Symbol

Values min typ max

Unit

Input and Status Feedback7) Input resistance see circuit page 6 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 3.5? V Delay time for status with open load
after Input neg. slope (see diagram page 11)

RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on)


td(ST OL3)

-1 0.8 -1 10 --

20 --0.5 -25 200

-2.5 --30 70 --

k V V V A A s

Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+150C, IST = +1.6 mA: VST(low)

5.4 --

6.1 --

-0.4

7)

If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group

BTS 307 Truth Table


Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level Output level Status BTS 307 BTS 707

L L L H H H 8) L H H H H L L L H L L L H H H H H L L L H L L L L L H L L no overvoltage shutdown, see normal operation X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11)

Terms
Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON

Status output
+5V

R ST(ON)

ST

GND

ESDZD

ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 0 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Input circuit (ESD protection)


R IN

Short circuit detection


I

Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by the PROFET itself, external switch off recommended!
+ V bb

ESD-ZD I GND

I
V ON

ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

OUT

Logic unit

Short circuit detection

8)

Power Transistor off, high impedance, internal pull up current source for open load detection.

Semiconductor Group

BTS 307
Inductive and overvoltage output clamp
+ V bb V Z

GND disconnect
3 IN Vbb PROFET 4 V bb V IN VST ST GND 1 V GND OUT

+5V
VON

2 12k

OUT GND

PROFET

VON clamped to -- V typ.


For Vbb=24V and VIN=0V: VST>2.8V @ IST 0 if pulled up as shown. Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .

Overvolt. and reverse batt. protection


+ Vbb V

GND disconnect with GND pull up


3 IN Vbb PROFET OUT

R IN

IN

RI Logic

Z2

R ST

ST V

Z1

PROFET
GND

ST GND 1

R GND
Signal GND

V bb

V IN ST

GND

VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 , RST= 15 k, RI= 20 k typ.

Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.

Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low

Vbb disconnect with energized inductive load


3 high 2 IN Vbb PROFET OUT

OFF
I L(OL)

ST GND 1

Logic unit

Open load detection

V
V OUT

bb

Signal GND

Normal load current can be handled by the PROFET itself.

Semiconductor Group

BTS 307
Vbb disconnect with charged external inductive load
S high 2 IN 3 Vbb PROFET 4 ST GND 1 V OUT

Inductive Load switch-off energy dissipation


E bb E AS V bb PROFET OUT EL GND ZL ELoad

IN
5 D

ST

bb

L RL ER

If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.

Energy stored in load inductance:

EL = 1/2LI L
While demagnetizing load inductance, the energy dissipated in PROFET is

EAS= Ebb + EL - ER= VON(CL)iL(t) dt,


with an approximate solution for RL > 0 : IL L ILRL (V + |VOUT(CL)|) ln (1+ ) |VOUT(CL)| 2RL bb

EAS=

Semiconductor Group

BTS 307 Options Overview


all versions: High-side switch, Input protection, ESD protectionand reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version
BTS 410D2 410E2 410G2 410H2 D X X X X X X X X X X X X X X -11) X X X X X X X X X X X X X X -11) X X X X X -11) X X X X X X X X X X X X X X X X X X X X X E G H X X X X 307 308

Overtemperature protection with hysteresis Tj >150 C, latch function9)10) Tj >150 C, with auto-restart on cooling Short circuit to GND protection
switches off when VON>3.5 V typ. and Vbb> 8 V typ9) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.9) (when first turned on after approx. 150 s) Achieved through overtemperature protection

Open load detection


in OFF-state with sensing current 6 A typ. in ON-state with sensing voltage drop across power transistor

Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for
overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage

Status output type


CMOS Open drain

Output negative voltage transient limit


(fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X X X X X X

Load current limit


high level (can handle loads with high inrush currents) low level (better protection of application)

Protection against loss of GND

9)

Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 10) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 11) Low resistance short V to output may be detected in ON-state by the no-load-detection bb

Semiconductor Group

BTS 307

Timing diagrams
Figure 1a: Vbb turn on, : Figure 3a: Short circuit: shut down by overtempertature, reset by cooling
IN

IN

V bb

t d(bb IN) V OUT normal operation Output short to GND

OUT

I A ST open drain t A
in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s

L(SCp) I L(SCr)

ST t
Heating up requires several milliseconds, depending on external conditions. External shutdown in response to status fault signal recommended.

Figure 2a: Switching an inductive load, Figure 4a: Overtemperature: Reset if Tj <Tjt

IN

IN

ST

ST

V
OUT

V
OUT

I
L

T
J

Semiconductor Group

10

BTS 307
Figure 5a: Open load, : detection in OFF-state, turn on/off to open load Figure 6a: Undervoltage:

IN IN V bb V
bb(under)

ST

t d(ST OL3)

Vbb(u cp) Vbb(u rst)

V
OUT

V OUT

I
L

open

normal *) t

ST open drain t

Figure 6b: Undervoltage restart of charge pump


td(ST,OL3) depends on external circuitry because of high impedance *) IL = 6 A typ

V on

Figure 5b: Open load, : detection in OFF-state, open load occurs in off-state

off-state

ST V bb(u V
OUT

V V bb(under) VOUT(OL)

bb(u cp)

on-state

IN

Vbb
charge pump starts at Vbb(ucp) =5.6 V typ.

I
L

normal *)

open

normal *) t

*) IL = 6 A typ

Semiconductor Group

11

BTS 307
Figure 7a: Overvoltage, no shutdown:

IN

Vbb

VON(CL)

OUT

VOUT(OL)

ST

Semiconductor Group

12

BTS 307

Package and Ordering Code


All dimensions in mm

Standard TO-220AB/5
BTS 307

Ordering code tbd

SMD TO-220AB/5, Opt. E3062 Ordering code


BTS 307 E3062A T&R: C67078-S5204-A4

Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components12) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems13) with the express written approval of the Semiconductor Group of Siemens AG.

TO-220AB/5, Option E3043 Ordering code


BTS 307 E3043 C67078-S5204-A3

12) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 13) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.

Semiconductor Group

13