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DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching applications.
1 2
TO-3
December 2000
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2N5038
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.25
o
C/W
I CEO I EBO
V CEO(sus) Collector-Emitter Sustaining Voltage V CER(sus) Collector-Emitter Sustaining Voltage V CEX(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(sat) V BE h FE h fe C CBO tr ts tf I s/b E s/b Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain Collector-Base Capacitance Rise Time Storage Time Fall Time Second Breakdown Collector Current Second Breakdown Energy
Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Pulsed: 0.5 s non repetitive pulse.
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2N5038
DIM.
P G
D C
P003F
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2N5038
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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