ZTX652

ZTX653

ISSUE 2 JULY 94
FEATURES
* 100 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

PARAMETER

ZTX652

SYMBOL

MIN. TYP.
Transition
Frequency

fT

Switching Times

ton
toff

140

ZTX653
MAX. MIN. TYP.

175

140

UNIT CONDITIONS.
MAX.

175

MHz

IC=100mA, VCE=5V
f=100MHz

80

80

ns

1200

1200

ns

IC=500mA, VCC=10V
IB1=IB2=50mA

30

Output Capacitance Cobo

30

pF

VCB=10V f=1MHz

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

THERMAL CHARACTERISTICS
SYMBOL
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

Thermal Resistance: Junction to Ambient1

Junction to Ambient2
Junction to Case

MAX.

UNIT

175
116
70

C/W
C/W
C/W

2.0

Am

1.0

0.5
0

-40 -20

20 40

bie

as

nt t

te

em

pe

ra

per

tu

re

at u
re

60 80 100 120 140 160 180 200

D=1 (D.C.)

t1

D=t1/tP
tP

100

D=0.5

D=0.2
D=0.1

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

0.001

0.01

0.1

10

ZTX653

UNIT
V

Collector-Base Voltage

VCBO

100

120

VCEO

80

100

Emitter-Base Voltage

VEBO

Peak Pulse Current

ICM

Continuous Collector Current

IC

1
5.7

W
mW/C

-55 to +200

at Tamb=25C
derate above 25C

Ptot
Tj:Tstg

ZTX652

ZTX653

PARAMETER

SYMBOL

Collector-Base
Breakdown
Voltage

V(BR)CBO

100

120

IC=100A

Collector-Emitter
Breakdown
Voltage

V(BR)CEO

80

100

IC=10mA*

Emitter-Base
Breakdown
Voltage

V(BR)EBO

IE=100A

Collector Cut-Off
Current

ICBO

10

A
A
A
A

VCB=80V
VCB=100V
VCB=80V,Tamb=100C
VCB=100V,Tamb=100C

0.1

VEB=4V

MIN. TYP.

MAX. MIN. TYP.

0.1

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

Emitter Cut-Off
Current

10
IEBO

MAX.

0.1

100

T -Temperature (C)

3-223

ZTX652

Collector-Emitter Voltage

Single Pulse

0
0.0001

E-Line
TO92 Compatible

Operating and Storage Temperature Range

200

Thermal Resistance (C/W)

Max Power Dissipation - (Watts)

2.5

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

1.5

C
B

Power Dissipation

PARAMETER

ZTX652
ZTX653

NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

0.1

UNIT CONDITIONS.

Collector-Emitter
VCE(sat)
Saturation Voltage

0.13
0.23

0.3
0.5

0.13
0.23

0.3
0.5

V
V

IC=1A, IB=100mA*
IC=2A, IB=200mA*

Base-Emitter
VBE(sat)
Saturation Voltage

0.9

1.25

0.9

1.25

IC=1A, IB=100mA*

Base-Emitter
Turn-On Voltage

0.8

0.8

IC=1A, VCE=2V*

VBE(on)

3-222

ZTX652
ZTX653

ISSUE 2 JULY 94
FEATURES
* 100 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

PARAMETER

ZTX652

SYMBOL

MIN. TYP.
Transition
Frequency

fT

Switching Times

ton
toff

140

ZTX653
MAX. MIN. TYP.

175

140

UNIT CONDITIONS.
MAX.

175

MHz

IC=100mA, VCE=5V
f=100MHz

80

80

ns

1200

1200

ns

IC=500mA, VCC=10V
IB1=IB2=50mA

30

Output Capacitance Cobo

30

pF

VCB=10V f=1MHz

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

THERMAL CHARACTERISTICS
SYMBOL
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

Thermal Resistance: Junction to Ambient1

Junction to Ambient2
Junction to Case

MAX.

UNIT

175
116
70

C/W
C/W
C/W

2.0

Am

1.0

0.5
0

-40 -20

20 40

bie

as

nt t

te

em

pe

ra

per

tu

re

at u
re

60 80 100 120 140 160 180 200

D=1 (D.C.)

t1

D=t1/tP
tP

100

D=0.5

D=0.2
D=0.1

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

0.001

0.01

0.1

10

ZTX653

UNIT
V

Collector-Base Voltage

VCBO

100

120

VCEO

80

100

Emitter-Base Voltage

VEBO

Peak Pulse Current

ICM

Continuous Collector Current

IC

1
5.7

W
mW/C

-55 to +200

at Tamb=25C
derate above 25C

Ptot
Tj:Tstg

ZTX652

ZTX653

PARAMETER

SYMBOL

Collector-Base
Breakdown
Voltage

V(BR)CBO

100

120

IC=100A

Collector-Emitter
Breakdown
Voltage

V(BR)CEO

80

100

IC=10mA*

Emitter-Base
Breakdown
Voltage

V(BR)EBO

IE=100A

Collector Cut-Off
Current

ICBO

10

A
A
A
A

VCB=80V
VCB=100V
VCB=80V,Tamb=100C
VCB=100V,Tamb=100C

0.1

VEB=4V

MIN. TYP.

MAX. MIN. TYP.

0.1

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

Emitter Cut-Off
Current

10
IEBO

MAX.

0.1

100

T -Temperature (C)

3-223

ZTX652

Collector-Emitter Voltage

Single Pulse

0
0.0001

E-Line
TO92 Compatible

Operating and Storage Temperature Range

200

Thermal Resistance (C/W)

Max Power Dissipation - (Watts)

2.5

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

1.5

C
B

Power Dissipation

PARAMETER

ZTX652
ZTX653

NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

0.1

UNIT CONDITIONS.

Collector-Emitter
VCE(sat)
Saturation Voltage

0.13
0.23

0.3
0.5

0.13
0.23

0.3
0.5

V
V

IC=1A, IB=100mA*
IC=2A, IB=200mA*

Base-Emitter
VBE(sat)
Saturation Voltage

0.9

1.25

0.9

1.25

IC=1A, IB=100mA*

Base-Emitter
Turn-On Voltage

0.8

0.8

IC=1A, VCE=2V*

VBE(on)

3-222

ZTX652
ZTX653
TYPICAL CHARACTERISTICS
0.6
0.5

IC/IB=10

hFE - Gain

VCE(sat) - (Volts)

225
0.4
0.3
0.2

175
VCE=2V
125

0.1

75

0.0001

0.001

0.01

0.1

25

10

0.01

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

VCE(sat) v IC

hFE v IC

10

1.4

1.0

1.0

VBE - (Volts)

VBE(sat) - (Volts)

1.2
1.2

IC/IB=10

0.8

VCE=2V
0.8

0.6
0.6
0.4
0.001

0.0001

0.1

10

0.0001

0.01

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

VBE(sat) v IC

VBE(on) v IC

td
tr
tf
ns
280

Switching time

0.1

0.001

10

Single Pulse Test at Tamb=25C

10

IC - Collector Current (Amps)

0.01

D.C.
1s
100ms
10ms
1.0ms
100s

240

2400

200

2000

160

1600

120

1200

80

800

40

400

ZTX652
ZTX653

0.01
0.1

10

IB1=IB2=IC/10
ts
ns
2800

0
0.01

ts

tf
td
tr

0.1

100

VCE - Collector Voltage (Volts)

IC - Collector Current (Amps)

Safe Operating Area

Switching Speeds

3-224