Modelling 3D of the straining by Avalanche
In the structures in PN junction to GaAs Semi - Insulator
Presenting Deep Centers - Traps. SIM3D Software.
Mr.A.RESFA * . Pr Mrs Brahimi.R.Menezla. Pr Mrs Bourzig
Y.Smahi.
Laboratory of modelling and conception of the circuits
electronic, department of electronics.
University Djillali Liabès. BP89, Sidi Bel Abbes 22000.
ALGERIA.
Summarized:
In this work, we simulated, the behavior of the
ionization phenomenon by impact " straining by
avalanche " of the PN junctions, subject to an inverse
polarization.
While taking into account the trapping model in a
stationary regime the P+N structures, PN+, and P+N+
using like material of basis the III-V compounds and
mainly the GaAs semi - insulator in which the deep
centers are in important densities.
The survey retailed of the physical and electric
behavior of the semiconductors and notably to really
surround the influence of the deep center presence on
the characteristic I(V) current - tension, that requires
the secondary size calculation as the electrostatic
electric, potential field, integrals of ionizations, the
density of the states traps, the current of diffusion of
the minority in the regions (1) and (3), the current of
generation thermal region (2), and the current of flight
in surface, so the tension of the straining..etc. We
introduced these quantities thereafter in pretender
SIM 3D, who is conceived for the survey of the
components to weak geometry of conception
permitting to determine in the volume of a structure,
the distributions of potential and of free carrier
densities according to a given polarization. The
system have been solved by a coupled Newton,
Newmann algorithm. The resolution method consist
of the linearisation of the transport equations by the
finite difference method. The actual version use a
combined method involving at the same time
Gummel' algorithm and Newton's algorithm, in order
to enable a better convergence and consequently to
improve the computation time in 3 dimensions (3D).
This simulator gives the spatial distributions of the
electrocstatic potentiel and density of carriers in the
simulation domain under biais.
I. INTRODUCTION
We present in this work a program of three-
dimensional simulation, studying the phenomenon of
ionization by impact " Effect Of avalanche " of the
PN junctions to basis of GaAs, while taking into
account the trapping model clean to the
semiconductors to relaxation. The GaAs made the
object these last years of a particular interest because
he proves to be a component presenting interesting
potentialities in many domains (logical, oscillators,
the development of the high range components, it is
the objective of the state-of-the-art technology to high
precision).
The advantages offered by this component are, on the
one hand, the absence of effect bound in the DX
centers in the non dopey layers and, on the other hand
the good uniformity of the tension doorstep that
makes of him a candidate privileged for the
conception of built-in circuits.
To get the elevated tensions of straining close to the
value of a plane junction, the components of power
were and are achieved again in part in technology
Mesa. However, this one remained reliable and
conducted little to an elevated dismissal rate. It is
therefore important, to remain competitive in the
international context, to be able to use the Planar
configuration, of setting in more attractive œuvre to
manufacture the components of power. Another
interest of this technology resides in the possibility to
associate several devices on the same crystal; she/it
permits to consider the realization of the circuits
integrated of power more conveniently therefore. On
the other hand, it presents the inconvenience to form
cylindrical or spherical junction sides around the
openings of masks breves that entail the existence
from a region to elevated field and therefore a
reduction important of holding in tension of the
peripheries.
This work has for objective, the determination of
the characteristic I(VBDV) of the inverse current in a
PN junction in GaAs basis, subject to an inverse
polarization while specifying the parameters that
influence the straining of the diodes.
II.2. SYSTEMS OF BASIS EQUATIONS
INTERVENING IN THE PHYSICAL MODEL
The systems of equations that translate the
mechanism of transportation, in stationary regime,
and that we will solve by numeric simulation, are
presented like follows:
Equation of Poisson
( )
div ε. gradψ = e [ n − p + N A + nr − pt ] (II.1)
τ pre . n + τ nre . plr
nr = N R
τ pre. (n+nlr ) + τ nre. ( p+ plr )
with : (II.2)
 τ nte . p + τ pre . nlt another atom pulls a new electron himself accéléré[7],
pt = NT
τ pte . (n+nlt ) + τ nte . ( p+ plt )
(II.3) etc... This phenomenon named effect of avalanche is
generally unverifiable and conducted to a destruction
Équations de continuité : of the junction.
• When the junction is polarized in inverse by a
1 .divJn = Ur − Ut (II.4) tension of Vi module, the largueur of the zone of
e space load increases as Vi whereas tension to his
boundary-marks augmente[2,4,9] as Vi. He results
1. divJp = − Ur − Ut (II.5)
e some that the electric field inside this zone increases.
In the case of the junction abrupt dissymétrique p+n
with : for example, the following expressions show that the
field is maximum to the metallurgic junction, in x=0,
Jn = e.µ n.n.E + e.Dn. grad n (II.6) and vary as :

E0 = eNd Wn (I.1) with Wn = ( 2ε (Vd +Vi ) )1/2 (III.1)

Jp = e.µ p.p.E − e.Dp. grad p (II.7) ε eNd

µ.kT
E = − gradψ (II.62) ; D= (II.1) What gives for Vi >> Vd
e
and
E0 = (2eNd/ ε )1/2 Vi (III.2)

n.p − ni 2
U nr = U pr = U r =
τ pre. (n+nlr ) + τ nre. ( p+ plr )
(II.8)
n.p − ni2
U nt = U pt = Ut =
τ pte. (n+nlt ) + τ nte. ( p+ plt )
(II.9)
These are these equations that will be solved in a
numeric way for structures in permanent working
(independent of the time).
II.2.3.A. NEUTRAL REGION OF THE DEVICE
In the neutral regions, one takes ρ =0. It implies
the solution particular Ψ =cste in the resolution of the
equation of LAPLACE ∆Ψ =0.
II.2.3.B. DESERTED REGION
In the deserted completely regions, one has p=0
and n=0. The position of the limit of the zone
destitute is gotten while forcing the potential to
remain in the applied tension domain.
II.4.3.C. INSULATING
In the insulators, while supposing that they don't
have a load, the equation of LAPLACE gives:
∆Ψ(x, y, z) =0 (II.10)
If the insulators have a density of load fix in volume,
Q, one takes the equation of POISON:
Q
∆Ψ(x, y, z) = − (II.11)
ε III.3.LE Phenomenon of ionization by impact
III. Behavior of the diode in the two senses
III.1. Straining by effect of avalanche (material little dopey).
In inverse, he reigns an intense electric field to
the level of the junction. This field can become
sufficient to pull an electron then to a link to
accelerate him and to procure him a sufficient energy
so that this electron at the time of a shock with
The Vi tension cannot increase indefinitely because a
r
limit exists to the value of the field electric E0 .
Indeed, when the electric field increases the electric
r r
strength F =−eE0 exercised on the bound electrons
increases.
When this strength is superior to the strength of link
of the valence electrons on the cores, these electrons
are freed, the material becomes driver and the Vi
tension doesn't increase anymore. In other words the
maximum electric field that one can establish in a
crystal semiconductor is the one that provokes the
direct excitation of an electron bound of the valence
strip toward a state free of the strip conduction, it is
To Say the ionization of the material. In silicon this
maximum field is the order of 106 V/cm, and of the
order of 107 V/cm in the GaAs.
III.2. Straining by effect zéner (greatly dopey material)
It is now about a non destructive straining
because the electric field is not sufficient
To accelerate sufficiently the electrons pulled to the
links. So that there is straining, it is sufficient that the
internal field is superior to his value criticizes (Ecri)
that is the order of 2.107 V/cm. In these conditions and
for an abrupt junction.
The ionization by impact or by shock appears in
a material for intense electric fields. Indeed, an
electron that drifts in a strong under the effect of an
electric field, win the energy under kinetic shape and
transmits it progressively to crystal by the numerous
shock slant that he/it does with the phonons of the
network.
.This process assures the thermal dissipation of the
potential energy lost by the electrons. However, if the
electric field is sufficiently intense, certain electrons
can, during one free flight, to acquire an energy as
their impact on an atom of the crystalline network,
succeeds to the rupture of a link and the creation of an
electron - hole pair.
.This process, illustrated on the III.1 face, can become
cumulative and can drive to the phenomenon of
avalanche. This effect being especially important than
the gap of the material is small (the energy of
doorstep of the ionization by shock is roughly of 3/2
Eg) [9], it is to the heart of our survey aiming to
optimize the structure of the HEMT transistors on InP
substratum).
III-1 face: Phenomenon of ionization by shock.
III.3.3. CONDITION OF AVALANCHE
So that the electron can make a shock ionizing it
is necessary that his kinetic energy acquired during
the free course means is superior to EG.
Q.EAV .L >EG. EAV =EG/Q.L. (III.3)
EAV = amplitude of the necessary electric field for
the avalanche.
L = free course means.
This EG: Height of the Strip Forbidden of the used
semiconductor-B.I, value of the electric field is gotten
for a tension applied on the metallurgic junction.
. The condition of avalanche is given therefore by
M ∞ the equal integral to the unit. The
tension of straining is based on the determination of
the ionization integral to a (1) dimension, his/her/its
value is defined like being the inverse polarization
tension for which this integral is equal to 1. TO 3D, it
is the inverse tension that corresponds to a maximum
ionization integral equals to 1 calculated in the
different directions of the electric field lines.
III. 4. IONIZATION BY IMPACTE
The zone of load of space of a junction in
inverse is browsed by some carriers responsible for
the flight current. These carriers are accelerated very
strongly by the reigning intense electric field in this
region. If this field is raised sufficiently (enters 105
and 106 Vcm-1) the carriers acquire in the crossing of
the ZCE enough kinetic energy to transfer to an
electron hired in a link of valence, electron of the BV
an energy of ionization capable to make bring up it in
the strip of conduction, creating a pair electron thus -
hole. There is Multiplication of the Carriers therefore.
The following faces give a ballistic representation "
11 and the other in the energizing diagram 12 " of the
phenomenon [9].
. This integral depends on rates of ionizations of the
electrons and holes αn and αp, it is necessary to know
the relation between the rate of ionization and
"amplitude of the electric field".
• Two parameters characterize the phenomenon
of ionization by impact:
a) The coefficients of ionization [10] αn(ζ) and
αp(ζ) cm-1 who represents the number of pairs
created by centimeter of course of an electron
or a hole and that are quickly functions
increasing with the electric field (in If, an" Si,
αn ≈103cm-1 for ζ=2.105 V cm-1.
b) The coefficient of multiplication [10]M that
represent the report of the inverse current of
the Ir junction in presence of informed
multiplication of Iro flight in the absence of
multiplication:
M = Ir (IV.1)
Iro
One can join these two parameters thanks to the
reasoning simple next one (that supposes the
coefficients of ionization of the electrons and the
equal holes, what is not actually):
a carrier crossing a ZCE of W thickness creates N
W
pairs: N = ∫ α (ξ (x ))dx (IV.2)
0
For every created pair, the electron and the hole are
swept quickly by the electric field each in an opposite
direction what comes back, according to an already
made reasoning, to the crossing of part of leaves from
it of the ZCE by an electron or a hole. So the even N
pair created by the initial particle provoke N2
ionizations and so forth. He results some that:
1
Ir =Iro(1+N+N2 + …) – Iro (IV.3)
1− N
W
1 = N = α (ξ (x ))dx
of or 1-
M ∫0 (V.4)
There is avalanche when every carrier creates, create
on his turn a pair electron hole, what drives to N = 1
and by following M = ∞.
W
∫α(ξ (x ))dx =1
0
(IV.5)
 IV.1.1. CALCULATION OF THE IONIZATION To determine the coefficients of multiplication in a
INTEGRALS junction subject p-n, a strong inverse polarization
To characterize the phenomenon of avalanche tension, we write the evolution of the densities of Jn
[10], one defines the coefficients of ionization αn and current and Jp (Face:II.13)
αp and the coefficients of multiplication Mn. and Mp.
IV.1.2. THE COEFFICIENTS OF IONIZATION
αn and αp
The coefficients of ionization represent the
number likely of ionizing collisions that an incidental
carrier undergoes, on an unit of length of course.
The analyses of the ionization mechanism [8,9,10]
permit to express the coefficients αn and αp according
to the local electric field and various physical
parameters as the energy of the optic phonon, the
II.13 face: Density of current in a junction p-n
energy of ionization, the free course means. Such
polarized in inverse.
expressions are often heavy and unusable. Thus, most IV.1.4. COEFFICIENT OF MULTIPLICATION
authors use empiric formulas deducted of the OF THE ELECTRONS
experience. We will keep the formulas generally used
to determine the coefficients of ionization Mn= 1 (IV.A)
xp
 xp 
αn= an exp- bn (IV.6) and αp= ap exp -
bp
(IV.7) 1− ∫αn exp− ∫ (αn −αp )dx'dx
E E xn  x 
Where E is the electric field and an, bn, ap, bp of the
constants. These expressions can be considered like IV.1.5.COEFFICIENT OF MULTIPLICATION
OF THE HOLES
simplifications of the theoretical laws. The values of
the constants proposed by various authors [18,19,20] Mp = 1 (IV.B)
 
xp x
(chapter II). In our simulation, we worked with the
coefficients -R .VAN OVERSTRAETENS [20] are 1− ∫αp exp+ ∫ (αn −αp )dx'dx
xn  xn 
given in the following picture:
A.G. C.A.LEE R.VAN These expressions are demonstrated in the theses
CHYNOWETH OVERSTRAE of URGELL[21], LEGUERRE [23], LETURCQ [24]
[18]
TEN and BONNAUD [5], and the publication of MILLER
[19]
[20] [25,26].
IV.1.6. THE INTEGRALS OF IONIZATIONS
Ap(cm-1) 6,71x105 2,25x107 1,582x106
The integrals of In ionizations and Ip can be
Bp(V/cm) 1,693x106 3,26x106 2.036x106 calculated from the coefficients of multiplications and
we have:
An(cm-1) 7,03x105 3,80x106 7,03x105

1,231x106 1,75x106 1,23x106 I =1− 1 (IV.C) et I =1− 1 (IV.D)

Bn(V/cm) n p
M n M p

Table II.1. The coefficients of ionization xp

 xp 
I n xn∫
= αn exp − ∫ (αn −αp )dx'dx (IV.E)
IV.1.3. THE COEFFICIENTS OF MULTIPLICATION  x 
 x 
xp

− ∫(αp −αn )dx'dx

MN AND MP .
The coefficients of multiplication of the carriers
represent the report of the resulting current of the
avalanche phenomenon to the crossing of the
ionization zone on the incidental current. Because of
the difference between the coefficients year and ap,
one defines MN AND MP two coefficients of
multiplication for the electrons and for the holes.
I p xn∫
= αp exp
 xn 
(IV.F)
According to SIEVE OVERSTRAETEN and
al[17][20], one calculates the integral of the electrons
to determine the tension of straining of one junction
pn+ and the integral of the holes for a junction p+n.
The infinite multiplication coefficient is the criteria of
straining that we will use for our structures p+n, from
where the integral of ionization of the holes will be
taken equal to 1.

Important note:
Concerning the geometry of our structure is like next
one; In our case, it is about one interface of a diode
pn can come closer then as to have a cylindrical shape
along a right side and a spherical to a corner of an
oblong model. We didn't take account on the order of
the junction depth, xj. of the ray of curvature xj=0
that is there equal zero in our case, it is about a plane
diode
V.1. SIMULATION 3D OF THE STRUCTURE:
P+N, PN+ and P+N+.
V.1.1. POTENTIAL ELECTROSTATIC
AND ELECTRIC FIELD
The electric field generated by a tension of
polarization presents an intensity and a specific
direction in every point in the ZCE. However it is
important to find all d ' first the potential electrostatic,
the interest of the potential resides in the fact that the
value of the intensity of the electric field in a point
drifts directly of the variation of the potential.
The electric field caracteristics, current-tension, and
the carriers densities are derived by iterative method
of the transport's equations.
The regime of balance thermodynamic
V.1 face: Profile of the distribution of the potential to the
thermodynamic balance of a P+N diode in GaAS (Plan XOY,
Z=0.8µm) Survey under polarization
Profile of the field electric " Strong multiplication "
under inverse polarization.
V.2 face: Distribution of the lines of field of a P+N
diode.
The variation of the potential electrostatic represented
here over (V.2 face), after having solved the equation
of applied Fish on this structure " three-dimensional
resolution 3D ".
1) The electric field is a vector, characterized in
every point of the domain by a vector E(x, of
it, z) with a sense and an intensity. In a three-
dimensional reference mark, he/it is marked
by his/its three components scalar Ex(xes, of
it, z), Ey(x, there ,z), Ez (x, of it, z).
2) The équipotentielles is generally given by
closed lines possibly closing endlessly se
(V.2 face). They include the loads and are
perpendicular to the lines of field.
3) The V.2 face represents the electrostatic
équipotentielles of a P+N diode to GaAs semi
- insulator, while using the program of
simulation implémenter in our software
SIM3D.
Where: NA = 4.7.1019cm-3, ND = 4.32.101cm-3,
NT=2.32.1012cm-2, thickness of film=250nm,
l=350nm, Vpol_inv = 5volts, VBDV=21.61 Volt
,WZCE=251nm.
 • The ZCE due to the metallurgic contact of
which, his width varies inversely
proportional to the concentration of dopage
of the layer integrated. This zone is therefore
more important since it presents an intensity
of considerable electric field is of the density
of state of the centers traps condensed to the
surface of the metallurgic diode.
• The spacing of the cristallites of GaAs
between them, act strongly on the
phenomenon of trapping of the free carriers
by the states traps that are going to disrupt
the electric field evolution.
V.1.2. INTEGRAL OF IONISATION/COURANT
INVERSE/TENSION OF Straining
• The different parameters put in game in the
V.5 face: Variation of the inverse current according to the tension
model, and the effect of some capable to of straining & the inverse tension of the P+N diode.
influence on the phenomenon of avalanche of
the PN junction in general, well on play some
on the parameter of dopage of the two regions
(1) and (3).
• For the P+N structures, the variation of the
ionization integral according to the inverse
polarization tension as well as the tension of
straining deducted for this kind of structures is
represented in the (V.5 face), the integral of
ionization is the order of 9,80.10-1 for the
holes and 9.17.10-1 for the electrons in the
whole structure. .
• The density of state [0.45E15 - 3E15] is
inversely proportional to the tension of
straining that limited [17 - 21.61Volts], it is
due to the thickness of the Movie of the
substratum of GaAs that is [350nm](V.3 face).

Face V.5A-B :Variation of the inverse current according to the

tension of straining & the inverse tension of the P+N+ diode.

V.4 face: Variation of the inverse current according to the tension

of straining of the P+N diode.
V.6 face: Variation of the inverse current according to the tension
of straining & the inverse tension of the PN+ diode.
. Concerning calculates it of the The integral Of
ionization increases with the increase of the inverse
tension. What we note the face (V.6 face), that the
tension of straining that corresponds to tension for
which the equal ionization integral to 1.
. Holding in tension is limited between 13.59 Volts &
17.21 Volts of a PN junction achieved to basis of
silicon polycristallin [27] and for the P+N diodes
some GaAS is the order 14.02 Volts & 21.61Volts in
our survey.
. The introduction of traps or deep centers in a
semiconductor drives to a complexity in the
interpretation of the transportation mechanisms and
simultaneously to a big diversity in the shape of the
run - tension features of a component.
. A center participating in a mechanism of
recombination of the Shochley-Read[18 type] is
characterized by four new parameters capable to vary
one of the other independently: n1t (and p1t) (cm -3)
that are functions of the position in energy of the level
in the forbidden strip and (s-1)parameters.
. Bound to the sections efficient of capture for the
electrons and the holes and finally the Nt density
(cm -3)du centers himself.
. The results of simulation acquired our P+N structure
to basis of GaAs, we permitted ourselves to pull the
following findings:
. The existence of the centers traps to an important
influence on the determination of the semiconductor's
nature, according to the density of the center traps (he
is in this case of P type).
. The structure doesn't present any real variations that
according to the perpendicular direction to the plan of
interface.
. With the secondary size introduction in pretender
SIM 3D, the analysis of the transportation
mechanisms in our P+NS structures, PN+, and P+N+
to basis of GaAs, permitted us to arrive to the
following observations:
. Under applied polarization reverses, and since there
is an injection important of holes in the critical region,
the tendency to the global neutrality of the space load
requires a growth of the free electron density (in
relation to the thermodynamic balance).
. This growth entails an increase of the generation
current and because it is in sense opposite informed
total inverse, a local increase of the electric field
results from it.
. The comparison between the pace of the electric
field with the one found by bidimensional simulation,
showed that the mechanisms of transportation through
a N+ contact in presence of deep centers in the
forbidden strip, doesn't obey the classic model of the
P-N junction of Shockley type even though with the
presence of the phenomena of generation -
recominaison.
. Such An evolution of the temperature, limit the
performance of the junctions strongly especially in
the materials that present some centers traps deep
materials to large forbidden strip. The side the more
weakly dopey is the one that determines, according to
the value of Jf current of flight. He results some that,
to minimize the currents of flight, the concentrations
of dopes, to the two sides of the junction, must be
maximized and must be (Na >Nd).
. The parameters fixes( 1) or variables(2), some three
structures are noted stables(1 previously) and
instables(2) in a middle simulation fork. Then We see
therefore, that when the dopage of the ND substratum,
for the " structure(2) " decreases, the tension of
straining increases, That will imply a lateral extension
of the bigger space load zone, it will be inversely
proportional in the reciprocal case structures (1).
. Indeed, when the dopage increases, the lateral
extension of the zone of space load is slightly
decreasing for the two first structure, and narrower for
the greatly dopey diodes and therefore, it won't
especially be necessary! remote the range of
simulation of every parameter to reach the optimum
of holding in tension of straining. It serves to prevent
the important gaps capable from emerging between
some values what could compromise the calculations
. As we said that the variation of the straining tension
decreases when the doping foulness concentration
increases, and the density of states NT traps becomes
inversely proportional to the BREAK DOWN
Voltage.
. If, one to admit the reciprocal case, it doesn't mean
that this decrease of the break down voltage to admit
weak values of the density of states NT traps, he is
limited enters of [2.03E15-1.59E16] for the first case
and [1.28.1015 - 2.3216]cm-2 concerning the second
case. The fall of the tension holding is of 21.61 volts
until 15.55 volts is joined inversely proportional with
the density of state traps NT.
· The thickness of movie of the substratum of GaAs
that is going to do a change of the resistance of the
material in the region (02) zone of desertion of the
load carriers, for it one to admit 250E-9 for the first
case, 258 E-9 for the second case and 245 E-9, the
minority carrier life span so their thermal speed acts
very quickly under the electric field effect so the
effect of ionization by impacte.
· Our survey on these structures (P+N, PN+ and
P+N+), being only structures of test for other ulterior
studies to understand the phenomena of transportation
of the semiconductors submitted to an inverse
polarization really, so the phenomenon of ionization
by impact and the thermal generation process, with
the hold in account of the geometric effects in these
structures in presence of elevated deep centers that
presumes a straining premature of this kind of diodes. [10]
· Finally, and as perspectives, this work will be an Viviane Boisson, Thèse de Doctorat du 23 Avril 1985
impulse bearer to give to others of freed, thereafter to L’école Centrale De Lyon.
the different structure simulation 3D to basis of other
‘Étude de la Géométrie Optimale Des Périphéries Des
types of devices that remain neutral tracks to this
stage. The improvement of the pretender SIM 3D Jonction Planar.
version, permitted us to create a tool of the simulation [11]
in a several senses.
W.SHOCKLEY-Read.
Czech –J.Phys.,vol.B11,p81-104 (1961)
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