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EE4
LSI Circuits
Electrical Engineering
Drain conductance
= K(W L) p = 2 ( kT q ) ln ( n i N A )
D. Renshaw
C OX = OX t OX = ( 2 Si qN ) C OX
VE = 1 ( L )
page 1 of 5
dar@streep.D:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm
University of Edinburgh
EE4
LSI Circuits
Electrical Engineering
Saturation
CoxWLeff CoxWLD CoxW(LD + 2Leff / 3) 0 AD Cj + PDCjSW AS Cj + PSCjSW + 2WLeff Cj / 3
Ohmic
CoxWLeff CoxW(LD + Leff / 2) CoxW(LD + Leff / 2) 0 AD Cj + PDCjSW + WLeff Cj / 2 AS Cj + PSCjSW + WLeff Cj / 2
where
Cj0 C j = C j ( V ) = -------------------------n (1 V )
V = V BD or V = V BS or V = V BC
1 1 and n = -- -3 2
18 September 1994
Modified 1/12/08
D. Renshaw
dar@streep.D:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm
page 2 of 5
University of Edinburgh
EE4
LSI Circuits
Electrical Engineering
20%
Units V V
Interlayer Capacitances
Layers poly-diff gateoverlap capacitance poly-subs diff-subs Value 0.7 0.3 0.02 0.2 0.4 diff-subs in well M2 - subs M2 - diff M2 - poly M2 - M1 M1 - subs M1 - diff M1 - poly well 0.3 0.5 0.02 0.03 0.03 0.05 0.02 0.04 0.04 0.2 1.6 Units fF/(m)2 fF/(m) fF/(m)2 fF/(m)2 fF/(m) fF/(m)2 fF/(m) fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)
20%
Comment gate oxide gate-source gate-drain
A/V2 A/V2
V1/2 V1/2 V-1 V-1 V V cm2/(V.s) cm2/(V.s) V/m V/m
0 VE
n p n p n p n p n p
(L10m)
20%
/sq. /sq. /sq. /sq. /sq. /sq. /via /contact /contact /sq.
2m2m 2m2m 2m2m bulk Si
A/m
mA/m mA/m
A/via
mA/contact mA/contact
7.5
nH
18 September 1994
Modified 1/12/08
D. Renshaw
dar@streep.D:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm
page 3 of 5
University of Edinburgh
EE4
LSI Circuits
Electrical Engineering
SCALE FACTORS: T = 1E12 M = 1E-3 G = 1E9 U = 1E-6 MEG = 1E6 N = 1E-9 K = 1E3 P = 1E-12 MIL = 25.4E-6 F = 1E-15
18 September 1994
Modified 1/12/08
D. Renshaw
dar@streep.D:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm
page 4 of 5
University of Edinburgh
EE4
LSI Circuits
Electrical Engineering
18 September 1994
Modified 1/12/08
D. Renshaw
dar@streep.D:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm
page 5 of 5