Академический Документы
Профессиональный Документы
Культура Документы
Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 1/7
MTB35N04J3
Features
Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package
BVDSS ID RDSON(MAX)
Equivalent Circuit
MTB35N04J3
Outline
TO-252
G D S
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C Continuous Drain Current @ TC=100C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25 Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25 Total Power Dissipation @TC=100 Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
MTB35N04J3
40 20 12 8 48 10 5 2 36 12 -55~+175
mJ W C
Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 2/7
Value 4.1 80
Min. 40 1.8 12 -
Unit V V S nA A A A m m
Test Conditions VGS=0, ID=250A VDS =VGS, ID=250A VDS =5V, ID=10A VGS=20, VDS=0 VDS =32V, VGS =0 VDS =30V, VGS =0, Tj=125C VDS =10V, VGS =10V VGS =10V, ID=10A VGS =7V, ID=8A
*1
Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr
nC
ns
pF A V ns nC
Note : *1.Pulse Test : Pulse Width 300s, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.
Ordering Information
Device MTB35N04J3 Package TO-252 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Marking B35N04
MTB35N04J3
Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 3/7
On-Region Characteristics 50
V GS= 10V 8.0V 7.0V
On-Resistance Variation with Drain Current and Gate Voltage 2.4 2.2 2.0 VGS = 3.5 V 5.0 V
40
6.0V
30
6.0 V
7.0 V 8.0 V
20
5.0V 4.0V 3.5V
10
On-Resistance Variation with Temperature 1.9 ID = 10A V GS = 10V 1.6 R DS (on) - Normalized Drain-S ource On-Resistance
On-Resistance Variation with Gate-to-S ource Voltage 0.09 0.08 0.07 0.06 RDS(ON) - On-Resistance() 0.05 0.04 0.03 0.02 0.01 2 4 6 VGS- Gate-to-S ource Voltage(V) 8 10 TA = 25C T A = 125C ID = 10 A
1.3
1.0
0.7
0.4 -50
-25
100
125
150
100
Body Diode Forward Voltage Variation with S ource Current and Temperature V GS= 0V
10
T A= 125 C
25 C
0.1
-55 C
0.01
0.001
0.2 0.6 0.8 1.0 0.4 VSD- Body Diode Forward Voltage(V)
1.2
1.4
MTB35N04J3
Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 4/7
1200
VDS = 15V
20V
900 Capacitance( pF )
Ciss
600
2 0 0 4 8 Q g - Gate Charge(nC)
Maximum Safe Operating Area
12
16
80 50 RDS(ON) Limit
50
1ms
I D - Drain Current(A)
10ms
100s
40
30
100ms
1s 10s
20
10 0 0.001
1 0
40 50
0.01
0.1
1 10 t 1 ,Time (sec)
100
1000
1
Duty Cycle = 0.5
0.2
0.1
Notes:
PDM t1 t2
0.01
Single Pulse
t1 t2
0.001 10
-4
10
-3
10
-2
10 t 1 ,Time (sec)
-1
10
100
1000
MTB35N04J3
Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 5/7
MTB35N04J3
Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 6/7
Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3C/second max. (Tsmax to Tp) Preheat 100C Temperature Min(TS min) Temperature Max(TS max) 150C Time(ts min to ts max) 60-120 seconds Time maintained above: Temperature (TL) 183C Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 C Time within 5C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6C/second max. 6 minutes max. Time 25 C to peak temperature
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB35N04J3
Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 7/7
Marking:
B L F G
3 H E K 2 I 1 J
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283
Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80
DIM G H I J K L
Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630
Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60
Material:
Lead : KFC; pure tin plated Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB35N04J3