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Damian McCann, Director of Engineering MACOM - Long Beach Design Center damian.mccann@macomtech.com
Surveillance
Marine Radar
Attenuator
Switch Limiter
CMOS Drivers
Driver Amplifier Power Amp
GaN is the fastest growing segment of the $1.3B RF power transistor market GaN is expected to be approximately 25% of the overall RF power device market in 2016
Radar Satcom
SSPA
EW Jammer Avionics
Missile Systems
High Power and Frequency needs Lower Cost required one time use Tough Thermal demands need higher PAE
EW Receive
High RF survivable LNAs
Comms Transmit
Linearity and Efficiency at mm-Wave freqs
Comms Receive
mmW, wideband, Linearity and survivability
The push towards High Duty/CW Operation Three major market drivers for CW GaN in A&D power modules:
New systems need to be multi-purpose with comms, EW & datalinks etc.. These systems will require higher power, linear, high duty/CW solutions New program funding will most likely be based upon upgrades to current systems with aggressive cost targets and small form factors using GaN to replace aging TWT, Silicon or GaAs based power modules Size, weight, performance and cost become critical parameters for A&D system upgrades (SWaPC .!)
SWaPc
High Voltage Operation High Power Density Breakdown Field 200 Wide Bandgap
V/um
GaN
1.4 A/mm Imax
GaAs Si
Low Noise Figure Less Carrier Scatter Low RF loss Higher Efficiency
NF dB
Max Drain Current High Carrier Density High Electron Mobility Higher Power Smaller Size
Wider Bandwidth
Multi-function Capability
Generally speaking Half the Impedance Transformation Ratio, Voltage Double the BW
Company Confidential
Pout (watts)
Pin (watts)
Realizing the Size, weight and Performance (SWaP) advantage that GaN enables
While its clear that high-voltage GaN semiconductor technology sets a new standard in power, efficiency and bandwidth performance to enable new multi-function RADAR systems. Meaningful forward progress on reducing size and weights hinges on our ability to develop and manufacture
smaller, wider bandwidth, lighter and functionally more flexible power transistors modules that promote multifunction integration.
Next generation AESA radars need smaller packaged power transistors to reduce size, weight and cost, while maintaining optimal performance and reliability
Learning From other Applications Helps Guide Best Practices in Stress, Humidity and Temperature
GaN LED used in lighting and automotive applications MACOM plastic packaging approach
Thermal Measurement of 90W Device Shows Tj=113C for 80C Stage Temp
Thermal Balance approx 6degs
113 deg C junction temperature represents a very low risk for thermal reliability. Devices can operate at even higher temperatures The calculated MTTF at 200 deg C is roughly 600 years.
For transient thermal characterization, a single pixel, high-speed temperature detector is used in conjunction with the steady-state microscope.
Company Confidential
High Power GaN in Small Packages Fully matched multi-stage amplifier modules
Wide bandwidth (DC-3.5GHz) GaN Transistors
14 mm x 24 mm laminate module
Creating a Common Amplifier Module Platform for Total System cost savings
L-Band Avionics Band S-Band
IN
GaN
OUT
2 4 5
MABC-001000-000DPM
6
10 9 8
50VDC
Tested KGD
All SMT assembly Final Assembly also includes a conformal coating for enhanced environmental ruggedness
25
But will the SMT module not get hot sitting on a Laminate board ?
Vision: Develop device compatible materials and packaging techniques
to provide localized thermal management within the packaged device Increase thermal heat spreading and reduce heat flow barriers
GaN die Cu Leadframe Overmold Dense Solid Cu Via Hole Array Thermally Enhanced Ag Epoxy Tmax=141.3 C Even More Dense Via Hole Array MODULE PCB Epoxy Attach
Tbase=88 C
MODULE PCB
Tbase=89 C
Actual Rise in Temperature at base of Plastic GaN device is just 17degs < 1.1deg/W at 750uS and 15%
Total System Cost Reduction enabled by COTS GaN and High Power Laminate Based TRMs
Multi-stage L-Band Laminate Based Power Module Realize S-Band Version
Putting All The Technologies Together to Realize Affordable, High Power T/R Module and Planar Array Technology
S-Band Laminate Base >90W Power Building Block S-Band Laminate Based Surface Mount TRM Commercial Plastic Packaging and PCB Technologies for SWAPC
Driving Down the Cost for Future Radar Systems by Shifting the Paradigm of Design and Manufacturing
Integrating Laminate Based LGA Surface Mount TRM
110
0.3
90
0.2
80
0.1
70 2.7 2.8 2.9 3.0 3.1 3.2 3.3 Frequency (GHz) 3.4 3.5
0 2.7 2.8 2.9 3 3.1 3.2 3.3 Frequency (GHz) 3.4 3.5
In Summary
High performing and innovative GaN in space saving plastic enables radar system designers to take full advantage of GaN technology and achieve new levels of power density while significantly reducing system size and weight. Using existing SMT technology capacity and best commercial practices we are also able to reduce the size, weight and affordibility of integrated Plugand-play modular power solutions. These scalable and highly manufacturable modules, when used in a True SMT assembly with additional RF SMT components, form complete TRMs in AESA RADAR systems. Leading the way towards a truly modular RF solution for future AESA RADAR and multi-function systems. The ability to offer a COTS solution using GaN combines the best of advanced military power technologies and high-volume commercial manufacturing expertise, breaks through current boundaries of SWaP, resulting in total overall system cost savings.