The recording of hologram is based on the phenomenon of
interference. It requires a laser source, a plane mirror or beam splitter, an object and a photographic plate. A laser beam from the laser source is incident on a plane mirror or beam splitter. As the name suggests, the function of the beam splitter is to split the laser beam. One part of splitted beam, after reflection from the beam splitter, strikes on the photographic plate. This beam is called reference beam. While other part of splitted beam (transmitted from beam splitter) strikes on the photographic plate after suffering reflection from the various points of object. This beam is called object beam. The object beam reflected from the object interferes with the reference beam when both the beams reach the photographic plate. The superposition of these two beams produces an interference pattern (in the form of dark and bright fringes) and this pattern is recorded on the photographic plate. The photographic plate with recorded interference pattern is called hologram. Photographic plate is also known as Gabor zone plate in honour of Denis Gabor who developed the phenomenon of holography. Each and every part of the hologram receives light from various points of the object. Thus, even if hologram is broken into parts, each part is capable of reconstructing the whole object.
Figure: Recording process in holography 2. Reconstruction of image.. In the reconstruction process, the hologram is illuminated by laser beam and this beam is called reconstruction beam. This beam is identical to reference beam used in construction of hologram. The hologram acts a diffraction grating. This reconstruction beam will undergo phenomenon of diffraction during passage through the hologram. The reconstruction beam after passing through the hologram produces a real as well as virtual image of the object.
Figure: Reconstruction process in Holography One of the diffracted beams emerging from the hologram appears to diverge from an apparent object when project back. Thus, virtual image is formed behind the hologram at the original site of the object and real image in front of the hologram. Thus an observer sees light waves diverging from the virtual image and the image is identical to the object. If the observer moves round the virtual image then other sides of the object which were not noticed earlier would be observed. Therefore, the virtual image exhibits all the true three dimensional characteristics. The real image can be recorded on a photographic plate. He-Ne laser Construction : Helium neon laser used a mixture of 10:1 for its active medium. It consists of a long and narrow discharge tube of diameter of about 1 cm and about 80 cm long. The mixture is at a pressure of about 1 mm of Hg, the partial pressure of helium gas being 5 to 10 times that of neon. Working :When electric discharge is passed through the gas mixture of He and Ne, electrons are accelerated down the discharge tube in which mixture of He-Ne is placed. These accelerated electrons collide with helium atoms and excite them to higher energy levels (let us say F 2 and F 3 ).These levels happen to be Metastable and thus the He atoms spend a sufficient amount of time there before getting de-excited.
Achievement of population inversion of Neon atoms: Some of the excited states of Ne atoms correspond approximately to the same energy of the excited levels F 2 and F 3 of He. Thus, when He atoms in levels F 2 and F 3 collide with the Ne atoms in the ground state E 1 , then energy exchange takes place and this results in the excitation of Ne atoms to the levels E 4 and E 6 and de-excitation of the He atoms to the ground level F1. As the helium atoms have longer life time in excited states F 2 and F 3 , thus this process of energy transfer has high probability. Therefore, the electric discharge through the gas mixture continuously populates the Ne excited levels E 4 and E 6 . This helps to create a state of population inversion between the levels E 4 (or E 6 ) and lower energy levels E 5 and E 3 . Therefore the purpose of He atoms is to help in achieving a population inversion in the Ne atoms. Achievement of laser: The following three transitions will occur: E 6 to E 5 with laser wavelength of 3.39 m or 33900 Angstroms. E 6 to E 3 with laser wavelength of 6328 Angstroms. E 4 to E 3 with laser wavelength of 1.15 m or 11500 Angstroms. The wavelengths of 3.39 m and 1.15 m corresponds to infrared region and wavelength 6328 Angstroms corresponds to red light wavelength (visible region).Mirrors of the optical resonators are so designed to show low reflectivity for wavelengths 3.39 m and 1.15 m. Thus photons of these wavelengths will be eliminated. Therefore, the photons of wavelengths 6328 Angstroms will move back and forth in optical resonator system and thus laser of wavelength 6328 Angstroms emerges through the partially reflected mirror.The excited Ne atoms drop down from levels E 3 to E 2 through spontaneous emission and this process will emit a photon of wavelength 0.6 m. As the level E 2 is also Metastable, there is a probability of excitation of Ne atoms from E 2 to E 3 leading to quenching of the population inversion. To eliminate quenching, the narrow discharge tube (diameter of tube is made small) is used because Ne atoms de-excited to level E 1 from E 2 through collisions with the walls of the tube. Semiconductor laser Construction: The semiconductor laser (gallium arsenide (GaAs)) is heavily doped semiconductor. Its n-region is formed by heavily doping with tellurium in a concentration of 10 17 to 10 19 atoms/cm 3 while its p-region is formed by doping with zinc in concentration around 10 19 atoms/cm 3 . The two faces of semiconductor which are perpendicular to junction plane make a resonant cavity. The top and bottom faces of diode, which are parallel to junction plane are metallised so as to make external connections. The front and back faces are roughned to suppress the oscillations in unwanted direction. The active medium in GaAs is GaAS. But it is also commonly said that depletion region is the active medium in semiconductor laser. The thickness of the depletion layer is usually very small (0.1 m).
Working: When p-n junction diode is forward biased, then there will be injection of electrons into the conduction band along n-side and production of more holes in valence band along p-side of the junction. Thus, there will be more number of electrons in conduction band comparable to valence band, so population inversion is achieved. Therefore, when the electrons and holes are injected into the junction region from opposite sides with forward biasing, then population inversion is achieved between levels near the bottom of the conduction band and empty levels near the top of the valence band. When electrons recombine with the holes in junction region, then there will be release of energy in the form of photons. This release of energy in the form of photons happens only in special types of semiconductors like Galium-Arsenide(GaAs). Otherwise in semiconductors like silicon and germanium, whenever holes and electrons recombine, energy is released in the form of heat, thus Si and Ge cannot be used for the production of laser. The spontaneously emitted photon during recombination in the junction region of GaAs will trigger laser action near the junction diode. The photons emitted have a wavelength from 8200 to 9000 in the infrared region.
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