Molecular Electronics

Molecular Electronics
Different Electronic Materials

Semiconductors: Elemental (Si, Ge) & Compound (GaAs,

GaN, ZnS, CdS, )
Insulators: SiO

, Al

O
!
, Si
!
N
"
, SiO
#
N
$
, %%%

Conductors: Al, Au, Cu, &, silicide, %%%

Organic and polymer -> li'uid cr$stal, insulator,

semiconductor, conductor, superconductor

Composite materials -> multi(la$er structures,

nano(materials, p)otonic cr$stals, %%%

More: ma*netic, +io,

Insulators, Conductors, Semiconductors
,nor*anic Materials
E
-alence +and
filled
conduction +and
empt$
.or+idden
re*ion
E
g
> /e0
1and
*ap
E
conduction
+and

E
g
< /e0
1and
*ap
2
(
electron
hole
E
-alence
+and
partiall$(filled
+and
,nsulator Semiconductor Conductor
Si3 E
*
4 5%5 e0
Ge3 E
*
4 6%7/ e0
GaAs3 E
*
4 5%" e0
SiO

3 E
*
4 8 e0
Electronic properties & de-ice function
of molecules

Electrons in molecule occup$ discrete ener*$

le-els(((molecular orbitals

9i*)est occupied molecular or+ital (9OMO) and lo:est

unoccupied molecular or+ital (;<MO) are most important to
electronic applications
1and*ap of molecule3 E
*
4 E(;<MO) ( E(9OMO)

Organic molecules :it) car+on(+ased co-alent +onds, :it)

occupied +ond states ( +and) as 9OMO and empt$
anti+ondin* states (
=
+and) as ;<MO
;o:er ener*$ +$ delocalization3


1en>ene 1ip)en$l
Conductin* ?ol$mers
?ol$acet$lene3 E
*
@ 5%7 e0
@ 56
"
S cm
(5
?ol$sulp)ur nitride (SN)
n
@ 56
!
(56
A
S cm
(5
?ol$(p)en$lene(-in$lene) (??0)
9i*) luminescence efficienc$
Diodes and nonlinear de-ices
Molecule :it) D((A
structure
C
5A
9
!!
B(!CNB
9i*)l$ conducti-e >:itterionic D
2
((A
(

state at 5(0 for:ard +ias
Ce-erse conduction state D
(
((A
2

re'uires +ias of 80
I-V cur-e of AlD"(M; C
5A
9
!!
B(!CNB ;1
filmDAl structure
A

D
Self(assem+led la$er +et:een Au electrodes
Ne*ati-e differential resistance (NDC)3 electronic
structural c)an*e under applied +ias, s)o:in* peaE
conductance
F(amino("(et)$n$lp)en$l("Fet)$n$lp)en$l(/F(nitro(5(+en>e
nnt)iol
NDC peaE(to(-alle$ ratio @ 5666
Molecular .EG and lo*ic *ates
Molecular sin*le(electron transistor3
Could ac)ie-e s:itc)in* fre'uenc$
H 5 G9>
Assem+l$ of molecule(+ased electronic de-ices
IAlli*ator clipsJ of
molecules3
Attac)in* functional atoms
S for effecti-e contact to Au

9i*) conductance t)rou*) leads +ut surface of +od$ is insulatin*
Self(assem+led Molecular (SAM) ;a$ers
6%5 M; 5(nitronap)t)alene
adsor+ed on Au(555) at A/ K
Ordered (D clusters
Carene on Si(566)

Simulated SGM ima*es
for (c)

for (a)
Self(assem+led patterns of trans(1CG1?? on Au(555) at A! K
Interlocking with
CN groups
Or*anic G)in .ilm
Gransistors (OG.G)
Or*anic ;i*)t Emittin* Diode
(O;ED)
Conventional Or*anic Electronic De-ices
.or lar*e(area flat(panel displa$s,
circuit on plastic s)eet
?rintin*3
Soft(lit)o*rap)ic
process in
fa+rication of
or*anic electronic
circuits
?roduction of uniform si>e sp)erical BDs
All clusters nucleate at +asicall$ same moment, BD si>e distri+ution L 5/M
BDs of certain a-era*e si>e are o+tained +$ remo-in* t)em out of solution after a
specific *ro:t) period
.urt)er si>e(selecti-e processin* to narro: t)e distri+ution to /M
Controlled
nucleation &
*ro:t) in
supersaturated
solution
Similar nucleation and *ro:t) processes of BDs also occur in
*lass (mi#ture of SiO

and ot)er o#ides) and pol$mer matrices

,on implantation into *lass 2 annealin*
Mono(dispersed nanocr$stals of man$ semiconductors, suc) as
CdS, CdSe, CdGe, ZnO, CuCl, and Si, are fa+ricated t)is :a$
Optimal performance of BDs for semiconductor laser acti-e
la$ers re'uires !D ordered arra$s of BDs :it) uniform si>e
,n :et c)emical BDs
fa+rication3 proper control
of sol-ent composition and
speed of separation
?assi-e optic de-ices :it) nanostructures3 ?)otonic Cr$stal
An optical medium :it) periodic dielectric parameter
r
t)at
*enerates a +and*ap in transmission spectrum
;uminescence from Si(+ased nanostructures
;uminescence efficienc$ of porous Si (?Si) and Si BDs
em+edded in SiO

@ 56
"
times )i*)er t)an cr$stalline Si
.a+rication of ?Si3 electroc)emical etc)in* in 9. solution,
positi-e -olta*e is applied to Si :afer (anodi>ation)
Si>es of porous )oles3 from nm to m, dependin* on t)e dopin*
t$pe and le-el
Nano(fin*er model of ?Si3
from Si 'uantum :ires to
pure SiO

fin*er :it)
increasin* o#idation
Emission spectrum of ?Si3
from infrared to t)e :)ole
-isi+le ran*e
CemarEa+le increase in luminescence efficienc$ also
o+ser-ed in porous Ga?, SiC
?recise control of ?Si properties not eas$

Si(+ased li*)t emittin* materials and de-ices
Di*ital Displa$
Atomic structures of carbon nanotubes
Sta+le +ulE cr$stal of car+on Graphite
;a$er structure3 stron* intra(la$er atomic +ondin*, :eaE
inter(la$er +ondin*
3! "
#!$ "
Enclosed structures3 suc) as fullerene +alls (e%*%, C
A6
, C
76
) or
nanotu+es are more sta+le t)an a small *rap)ite s)eet
rade-o!!" cur-in* of t)e +onds raises strain ener*$, e%*%, +indin*
ener*$ per C atom in C
A6
is @ 6%7 e0 less t)an in *rap)ite
M&NG, la$er spacin* @ !%" N
S&NG
0apor(p)ase s$nt)esis3 similar to C0D
Su+strate at @ 766(5/66C decorated :it) catal$st (Co, Ni or
.e) particles, e#posed to )$drocar+on (e%*% C9
"
, C
A
9
A
) and 9

Ali*ned CNGs *ro: continuousl$ atop of catal$st particles
Ce*ular CNG arra$s on catal$st
pattern
Useful for flat panel display
Electronic properties of S&NGs
S&NGs3 5D cr$stal
,f m ( n 4 !#
metallic
Ot)er:ise
semiconductor
Zi*>a*, d
t
4 5%Anm
45O, d
t
4 5%7nm
45, d
t
4 5%/nm
455, d
t
4 5%Onm
Armc)air, d
t
4 5%"nm
SGM I-V
spectroscop$
1and*ap of semiconductin*
S&NGs3
t
d
C C
a t
g
E

=
4 5%" N, /%" e0,
o-erlap inte*ral
t