Basic BJT Operation and Biasing

Neamen Microelectronics, 4e Chapter 5-1
McGraw-Hill
BASIC BJT OPERATION & BIASING

EMT 249 ANALOGUE ELECTRONIC 1

DR. SANNA TAKING
SCHOOL OF MICROELECTRONIC ENGINEERING
UNIVERSITI MALAYSIA PERLIS

McGraw-Hill
OBJECTIVES:

Discuss the physical structure and operation
of the bipolar junction transistor.
Understand and become familiar with the dc
analysis and design techniques of bipolar
transistor circuits.
Examine three basic applications of bipolar
transistor circuits.
Investigate various dc biasing schemes of
bipolar transistor circuits.

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Fig. 1 Simple geometry of bipolar transistors: (a) npn and (b) pnp
Transistor Structures
typical value ~10
6
m
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Fig. 2 Cross section of a conventional integrated circuit npn
bipolar transistor
the impurity doping concentrations in the E, B, and C may
be on the order of 10
19
, 10
17
, and 10
15
cm
3
, respectively
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npn Transistor: Forward-Active Mode Operation
Transistor Currents
Fig. 3 An npn bipolar transistor biased in the forward-active mode;
baseemitter junction forward biased and basecollector junction
reverse biased
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When the BE junction is forward biased, electrons
from the emitter are injected across the BE junction
into the base, creating an excess minority carrier
concentration in the base.

When the BC junction is reverse biased, the
electron concentration at the edge of that junction is
approximately zero. The base region is very narrow so
that, in the ideal case, the injected electrons will not
recombine with any of the majority carrier holes in the
base.

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Fig. 4 Minority carrier electron concentration across the base
region of an npn bipolar transistor biased in the forward-active
mode. Minority carrier concentration is a linear function versus
distance for an ideal transistor (no carrier recombination), and is a
nonlinear function versus distance for a real device (with carrier
recombination).
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Because of the large gradient in this concentration,
electrons that are injected, or emitted, from the emitter
region diffuse across the base, are swept across the
basecollector space-charge region by the electric field,
and are collected in the collector region creating the
collector current.
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Emitter Current:
Since the BE junction is forward biased, the current through
this junction to be an exponential function of BE voltage
Collector Current:
where i
C
= i
E
, and I
S
= I
EO

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the collector current is proportional to exp(v
BE
/V
T
)
and is independent of the reverse-biased BC
voltage. The device therefore looks like a constant-
current source. The collector current is
controlled by the BE voltage; in other words, the
current at one terminal (the collector) is controlled by
the voltage across the other two terminals. This
control is the basic transistor action.
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Base Current:
BE junction is forward biased, holes from
the base are injected across the BE junction
into the emitter.
recombination current
The total base current :
(1)
(2)
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Fig. 5 Electron and hole currents in an npn bipolar
transistor biased in the forward-active mode. Emitter,
base, and collector currents are proportional to
exp(v
BE
/V
T
)
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Common-Emitter Current Gain
In the transistor, the rate of flow of electrons and the resulting
collector current are an exponential function of the BE voltage,
as is the resulting base current. This means that the collector
current and the base current are linearly related
or
is the common-emitter current gain and is a key
parameter of the bipolar transistor. In this idealized situation,
is considered to be a constant for any given transistor. The value
of is usually in the range of 50 < < 300
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Fig. 6 An npn transistor circuit in the common-emitter
configuration. Shown are the current directions and voltage
polarities for the transistor biased in the forward-active mode.
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Current Relationships
If we treat the bipolar transistor as a single node, then, by
Kirchhoffs current law, we
have
If the transistor is biased in the forward-active mode, then
Hence, the relationship between the emitter and base currents is :
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and relationship between the collector and emitter currents is :

since i
C
= i
E
so,
The parameter is called the common-base current gain and is
always slightly less than 1. Note that if = 100, then = 0.99, so
is indeed close to 1.
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pnp Transistor: Forward-Active Mode Operation
Fig. 7 Electron and hole currents in a pnp bipolar transistor
biased in the forward-active mode. Emitter, base, and collector
currents are proportional to exp(v
BE
/V
T
) .
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Circuit Symbols and Conventions
Fig. 8 npn bipolar transistor: (a) simple block diagram
and (b) circuit symbol. Arrow is on the emitter terminal and
indicates the direction of emitter current (out of emitter terminal
for the npn device).
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Fig. 9 pnp bipolar transistor: (a) simple block diagram and (b)
circuit symbol. Arrow is on the emitter terminal and indicates
the direction of emitter current (into emitter terminal for the
pnp device).
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Fig. 10 Common-emitter circuits: (a) with an npn
transistor, (b) with a pnp transistor, and (c) with a pnp
transistor biased with a positive voltage source
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CurrentVoltage Characteristics
Fig. 11 Common-base circuit
configuration with constant
current source biasing:
(a) an npn transistor and
(b) a pnp transistor
Fig. 12 Transistor currentvoltage
characteristics of the common-base
circuit
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Fig. 13 Transistor currentvoltage characteristics of the
common-emitter circuit
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Fig. 14 Current-voltage characteristics for the common-emitter
circuit, showing the Early voltage and the finite output
resistance, r
o
, of the transistor
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The linear dependence of i
C
versus v
CE
in the forward-active
mode can be described by
where I
S
is assumed to be constant. In Fig. 14, the nonzero slope
of the curves indicates that the output resistance r
o
looking
into the collector is finite. This output resistance is determined
from
where I
C
is the quiescent collector current when v
BE
is a constant
and v
CE
is small compared to V
A
.
and r
o

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Nonideal Transistor Leakage Currents and Breakdown Voltage
Fig. 15 Block diagram of an npn transistor in an (a) open-emitter
configuration showing the junction leakage current I
CBO
and (b)
open-base configuration showing the leakage current I
CEO
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The current component I
CEO
is the normal collector current
resulting from the emitter current I
CEO

or
This relationship indicates that the open-base configuration
produces different characteristics than the open-emitter
configuration.
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Fig. 16 Transistor currentvoltage characteristics for the
common-emitter circuit including leakage currents. The dc beta
and ac beta for the transistor can be determined from this set of
characteristics. The Early voltage for this set of characteristics is
assumed to be VA =.
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A dc beta or dc common-emitter current gain can be defined as
where the collector current I
C2
includes the leakage current as
shown in the figure. An ac is defined as
This definition of beta excludes the leakage current as shown in
the figure.
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Breakdown Voltage: Common-Base Characteristics
Fig. 17 The i
C
versus v
CB
common-base characteristics, showing
the collectorbase junction breakdown
B-C junction is reverse biased
B-C junction
is forward biased
Breakdown
Voltage
Saturation
Active
Cutoff
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Breakdown Voltage: Common-Emitter Characteristics
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(a) Common-emitter circuit with npn transistor and (b) dc equivalent
circuit. Transistor equivalent circuit is shown within the dotted lines with
piecewise linear transistor parameters.
DC ANALYSIS OF TRANSISTOR CIRCUITS
(1) Common-emitter circuit
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The base current is
V
BB
> V
BE(on)
, which means that I
B
> 0. When V
BB
< V
BE(on)
, the
transistor is cut off and I
B
= 0.

In the collectoremitter portion of the circuit,
and
or
V
CE
> V
BE(on)
, which means that the BC junction is reverse
biased and the transistor is biased in the forward-active mode.
B-E loop
C-E loop
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the power dissipated in the transistor is given by
assuming I
C
>> I
B
and V
CE
> V
BE (on)
so the approximation of
the power dissipated is given as
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the common-emitter circuit with a pnp bipolar transistor
(a) Common-emitter circuit with pnp transistor and
(b) dc equivalent circuit.
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E-B loop :
E-C loop :
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Load Line and Modes of Operation
EXAMPLE 1
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B-E loop :
C-E loop :
Equation for Q-point: DC LOAD LINE
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(a) Baseemitter junction piecewise linear iv characteristics and the
input load line, and (b) common-emitter transistor characteristics and the
collectoremitter load line showing the Q-point
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EXAMPLE 2
(a) circuit; (b) circuit showing current and voltage values, assuming the
transistor is biased in the forward-active mode (an incorrect assumption);
and (c) circuit showing current and voltage values, assuming the transistor
is biased in the saturation mode (correct assumption)
Calculate the currents and voltages in a circuit when the transistor
is driven into saturation. The transistor parameters are: = 100,
and V
BE(on)
= 0.7 V. If the transistor is biased in saturation, assume
V
CE(sat)
= 0.2 V.
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1. Assume that the transistor is biased in the forward-active mode
in which case V
BE
= V
BE (on),
I
B
> 0, and I
C
= I
B
.
2. Analyze the linear circuit with this assumption.
3. Evaluate the resulting state of the transistor. If the initial
assumed parameter values and V
CE
> V
CE(sat)
are true, then the
initial assumption is correct.
However, if the calculation shows I
B
< 0, then the transistor is
probably cut off, and if the calculation shows V
CE
< 0, the transistor
is likely biased in saturation.
4. If the initial assumption is proven incorrect, then a new
assumption must be made and the new linear circuit must be
analyzed. Step 3 must then be repeated.
Problem-Solving Technique: Bipolar DC Analysis
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EXAMPLE 3
Voltage Transfer Characteristics
Develop the voltage transfer curves for both circuits below. Assume
npn transistor parameters of V
BE(on)
= 0.7 V, = 120, V
CE(sat)
= 0.2 V,
and VA =, and pnp transistor parameters of V
EB(on)
= 0.7 V, = 80,
V
EC(sat)
= 0.2 V, and V
A
= .
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(npn Transistor Circuit): For V
I
0.7V, the transistor Q
n
is cut off,
so that I
B
= I
C
= 0. The output voltage is then V
O
= V
+
= 5 V.

For V
I
> 0.7 V, the transistor Q
n
turns on and is initially biased in
the forward-active mode.
and
then
This equation is valid for 0.2 VO 5 V. When VO = 0.2 V, the
transistor Qn goes
into saturation. When VO = 0.2 V, the input voltage is found from
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which yields V
I
= 1.9 V. For V
I
1.9 V, the transistor
Q
n
remains biased in the saturation region.
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npn pnp
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Commonly Used Bipolar Circuits: dc Analysis
BE loop :
(a) circuit and (b) circuit showing
current and voltage values
CE loop :
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Common-base circuit with dual supply
E-B loop :
E-C loop :
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pnp bipolar transistor circuit with positive voltage
(a) circuit and (b) circuit showing
current and voltage values
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E-C loop :
E-B loop :
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npn bipolar transistor circuit with a load resistance
EXERCISE 1:
Calculate the characteristics of an
npn bipolar transistor circuit with a
load resistance. The load resistance
can represent a second transistor
stage connected to the output of a
transistor circuit. The transistor
parameters are:
V
BE(on)
= 0.7 V, and = 100.
Determine the Q-point and plot the
DC load line.
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BIPOLAR TRANSISTOR BIASING
to create a linear amplifier, we need to keep the transistor in the
forward-active mode, establish a Q-point near the center of the
load line, and couple the time-varying input signal to the base.
(a) A bipolar inverter circuit to be used as a time-varying amplifier;
(b) The voltage transfer characteristics
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Single Base Resistor Biasing
(a) Common-emitter circuit with a single bias resistor in
the base and (b) dc equivalent circuit
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Voltage Divider Biasing and Bias Stability
(a) A common-emitter circuit with an emitter resistor and voltage divider
bias circuit in the base; (b) the dc circuit with a Thevenin equivalent base
circuit
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Positive and Negative Voltage Biasing
(a) Circuit with positive and negative
(b) Thevenin equivalent circuit

Basic BJT Operation and Biasing

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Neamen Microelectronics, 4e Chapter 5-1

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