EL 5463 Introduction to RF/Microwave Integrated Circuits

(Lecture 2, Feb. 11, 2013)

Microwave Components
Detectors and Mixers:
Nonlinear devices to achieve frequency conversion of an input
signal; rectification, detection, and mixing.
Diode rectifiers and detectors:
Mixer: generate an output spectrum consisting of the sum and
difference frequencies of two input signals.
Single-ended Mixer:
v
RF
= V
r
cos
r
t, v
L0
= V
0
cos
0
t
i = (G
d
/4)[V
r
2
+ V
0
2
+ V
r
2
cos 2
r
t + V
0
2
cos 2
0
t + 2V
r
V
0
cos (
r
-
0
)t
+ 2V
r
V
0
cos (
r
+
0
)t]
Down-conversion in a heterodyne receiver
Up-conversion in a transmitter
Conversion Loss:
L
c
= 10 log(Available RF input power/Available IF output power) dB
= 10 log
10
(P
RF
/P
IF
) dB
Balanced Mixer:
V
rf
= [V
r
+ V
n
(t)] cos
r
t, V
L0
= V
0
cos
0
t
V
1
= {[V
r
+ V
n
(t)]

/ 2} cos (
r
t 90
0
) + (V
0
/ 2) cos (
0
t 180
0
)
= {[V
r
+ V
n
(t)] / 2} sin
r
t - (V
0
/ 2) cos
0
t
V
2
= {[V
r
+ V
n
(t)] / 2} cos (
r
t 180
0
) + (V
0
/ 2) cos (
0
t 90
0
)
= -{[V
r
+ V
n
(t)] / 2} cos
r
t + (V
0
/ 2) sin
0
t
i
1
= kV
1
2
= (k/2)[(V
r
+ V
n
(t))
2
sin
2
r
t + V
0
2
cos
2
0
t 2(V
r
+V
n
)V
0
sin
r
t cos
0
t]
i
2
= -kV
2
2
= -(k/2)[(V
r
+ V
n
(t))
2
cos
2
r
t + V
0
2
sin
2
0
t 2(V
r
+V
n
)V
0
cos
r
t sin
0
t]
i
1
= (k/4)[ (V
r
+ V
n
(t))
2
+ V
0
2
2(V
r
+V
n
)V
0
sin (
r
-
0
)t]
i
2
= -(k/4)[ (V
r
+ V
n
(t))
2
+ V
0
2
+ 2(V
r
+V
n
)V
0
sin (
r
-
0
)t]
i
if
= i
1
+ i
2
= -k(V
r
+V
n
)V
0
sin(
r
-
0
)t = -k(V
r
+ V
n
)V
0
sin
i
t
P
RF
= [Vr + Vn(t)]
2
/2Z
L,
P
IF
= i
if
2
Z
L
/2 L
c
= -20 log ( kV
0
Z
L
)
Single-pole Single-throw rf Switches:
Insertion Loss
IL = -20log V
L
/V
0

Series Configuration Shunt Configuration
PIN Diodes and Control Circuits
Equivalent circuits for
(a) reverse and (b) forward bias
states.
IL = -20log 2Z
0
/(2Z
0
+ Z
d
) IL = -20log 2Z
d
/(2Z
d
+ Z
0
)
CKTs for single-pole double-throw rf switches
PIN diode phase shifter: switched line, loaded line, reflection
Switch line: = (l
2
l
1
)
= 180
0
, 90
0
, 45
0
, etc.
Loaded Line
= [1(1 + jb)]/ [1+(1 + jb)] = -jb/(2+jb)
T = 1+ = 2/(2+jb) = [2/ (4+b
2
)] -tan
-1
b/2
Insertion loss due to reflection is the main
problem
Practical Loaded Line
A B 1 0 0 jZ
0
1 0 -BZ
0
jZ
0

C D jB 1 j/Z
0
0 jB 1 j(1/Z
0
B
2
Z
0
) BZ
0


SPST diode switch is used to control the two states for jB
A B cos
e
jZ
e
sin
e

C D jsin
e
/Z
e
cos
e


cos
e
= -BZ
0
= -b for small b,
e
~ /2 + b
Z
e
= Z
0
csc
e
= Z
0
/ (1 b
2
)

e
~ /2 + b and Z
e
~ Z
0
(1 + b
2
/2)

For diode on (forward biased), b = -1/3 cot cos
e
= 1/3 cot
For diode off (reverse biased), b = 1/3 tan cos
e
= -1/3 tan
= 45
0
= cos
-1
(1/3 cot ) - cos
-1
(-1/3 tan ) (on-off) = 121
0

Y
L
= 1 + jb, Y
in
= 1/Y
L
, Y
L1
= 1/Y
L
+ jb = (1-b
2
+jb)/(1+jb),
1
= (1-Y
L1
)/(1+Y
L1
) = b
2
/(2-b
2
+2jb)
P
t
/P
in
= 1 -
1
2
= 4/(4 + b
4
) = T
2
T = 2/ (4+b
4
)

T
1
= 1+
1
= 2/(1+Y
L1
) = 2Y
L
/(1+Y
L
2
) = 2(1+jb)/(2-b
2
+2jb);
(where 1+Y
L1
= Y
L
+1/Y
L
is used)
T = s
21
= T
1
(-j/Y
L
) = 2/[-2b + j(2-b
2
)]
Reflection Phase shifter
= e
-j
on state,
=

e
-j( + )
off state

Diodes are biased at the same state
RF Transistor Characteristics
Short-circuit current gain:
The upper frequency limit (G
i
sc
= 1):
Field Effect Transistors (FETs)
GaAs MESFET
DC biases: V
c
= V
g

I
ds
= V
ds
/R
ds
g
m
V
g

RF input at gate terminal: V
rf

V
crf
= V
rf
/(1 + j C
gs
R
i
)
I
dsrf
= -g
m
V
crf
/(1 + j C
ds
R
ds
)
V
dsrf
= I
dsrf
R
ds
,

thus,
I
ds
= V
ds
/R
ds
g
m
V
g
-g
m
V
crf
/(1 + j C
ds
R
ds
)
V
0
= (V
ds
g
m
V
g
R
ds
) g
m
V
crf
R
ds
/(1 + j C
ds
R
ds
)
HW #1 Problems from Chapter 10:
1, 4, 5, 6, 7, 11, and 12

(due by Feb. 25, 2013)