_______________General Desc ription

T he M A X761/M A X762 step-up swi tchi ng regulators

provide high efficiency over a wide range of load currents,
deli veri ng up to 150mA . A uni que, current-li mi ted
pulse-frequency-modulated ( PFM ) control scheme gives
the devices the benefits of pulse-width-modulated ( PWM )
converters ( high efficiency with heavy loads) , while using
less than 110A of supply current ( vs. 2mA to 10mA for
PWM converters) . The result is high efficiency over a wide
range of loads.
The M AX761/M AX762 input voltage range is 2V to 16.5V.
O utput voltages are preset to 12V ( M AX761) and 15V
( M AX762) , or they can be set with two external resistors.
With a 5V input, the M AX761 guarantees a 12V, 150mA
output. Its high efficiency, low supply current, fast start-up
time, SHDN controlling capability, and small size make the
M AX761 ideal for powering flash memory.
The M AX761/M AX762 have an internal 1A power M O S-
FET, making them ideal for minimum-component, low- and
medium-power applications. These devices use tiny exter-
nal components, and their high switching frequencies ( up
to 300kHz) allow for small surface-mount magnetics.
For increased output drive capability or higher output volt-
ages, use the M AX770M AX773, which are similar in
design to the M AX761/M AX762, but drive external power
M O SFET s. For steppi ng up to 5V, see the M A X756/
M AX757 and M AX856-M AX859 data sheets.
_________________________Applications
Flash M emory Programming
PCM CI A Cards
Battery-Powered Applications
High-Efficiency DC-DC Converters
____________________________Features
o High Efficiency for a Wide Range of Load Currents
o 12V/150mA Flash Memory Programming Supply
o 110A Max Supply Current
o 5A Max Shutdown Supply Current
o 2V to 16.5V Input Voltage Range
o 12V (MAX761), 15V (MAX762) or Adjustable Output
o Current-Limited PFM Control Scheme
o 300kHz Switching Frequency
o Internal, 1A, N-Channel Power FET
o LBI/LBO Low-Battery Comparator
______________Ordering Information
M
A
X
7
6
1
/
M
A
X
7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
________________________________________________________________ Maxim Integrated Products 1
1
2
3
4
8
7
6
5
V+
LX
GND
REF SHDN
FB
LBI
LBO
M AX7 6 1
M AX7 6 2
DI P/ SO
TOP VIEW
__________________Pin Configuration
MAX761
LBI
SHDN V+
FB
REF
LX
OUTPUT
12V
150mA
LOW- BATTERY
DETECTOR OUTPUT
LOW- BATTERY
DETECTOR INPUT
INPUT
4. 75V
TO 12V
ON/ OFF
GND
LBO
33F
33F
18H
__________Typic al Operating Circ uit
Call toll free 1-800-998-8800 for free samples or literature.
19-0201; Rev 0; 11/93
PART TEMP. RANGE PIN-PACKAGE
MAX761CPA 0C to + 70C 8 Plastic DI P
M AX761CSA 0C to + 70C 8 SO
M AX761C/D 0C to + 70C Dice*
M AX761ESA -40C to + 85C 8 SO
M AX761EPA -40C to + 85C 8 Plastic DI P
M AX761M JA -55C to + 125C 8 CERDI P**
MAX762CPA 0C to + 70C 8 Plastic DI P
M AX762CSA 0C to + 70C 8 SO
M AX762C/D 0C to + 70C Dice*
M AX762EPA -40C to + 85C 8 Plastic DI P
M AX762ESA -40C to + 85C 8 SO
M AX762M JA -55C to + 125C 8 CERDI P**
* Contact factory for dice specifications.
** Contact factory for availability and processing to M IL-STD-883.
E
v
a
lu
a
tio
n
K
it
A
v
a
ila
b
le
M
A
X
7
6
1
/
M
A
X
7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Supply Voltage V+ to G ND .......................................-0.3V to 17V
REF, LBO , LBI , SHDN, FB ............................-0.3V to ( V+ + 0.3V)
LX..............................................................................-0.3V to 17V
LX Peak Current....................................................................1.5A
LBO Current..........................................................................5mA
Continuous Power Dissipation ( TA = + 70C)
Plastic DI P ( derate 9.09mW/C above + 70C) ............727mW
SO ( derate 5.88mW/C above + 70C) .........................471mW
CERDI P ( derate 8.00mW/C above + 70C) .................640mW
O perating Temperature Ranges:
M AX76_C_A ........................................................0C to + 70C
M AX76_E_A .....................................................-40C to + 85C
M AX76_M JA ..................................................-55C to + 125C
Junction Temperatures:
M AX76_C_A/E_A..........................................................+ 150C
M AX76_M JA.................................................................+ 175C
Storage Temperature Range.............................-65C to + 160C
Lead Temperature ( soldering, 10sec) .............................+ 300C
ELECTRICAL CHARACTERISTICS
( V+ = 5V, I LO AD = 0mA, CREF = 0.1F, TA = TM I N to TM AX, typical values are at TA = + 25C, unless otherwise noted.)
Stresses beyond those listed under Absolute M aximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PARAMETER SYMBOL MIN TYP MAX
88 110
M inimum Start-Up Voltage 1.7 2.0 V
M inimum O perating Voltage 1.7 V
Supply Current
300
A
Shutdown Current 1 5 A
11.52 12.0 12.48
2 16.5
3 16.5 Supply Voltage V+
3.1 16.5
V
11.52 12.0 12.48
14.4 15.0 15.6
O utput Voltage
( Note 1)
VO UT
14.4 15.0 15.6
V
Peak Current at LX I PEAK 0.75 1.0 1.25 A
M aximum Switch-O n Time tO N 6 8 10 s
M inimum Switch-O ff Time tO FF 1.0 1.3 1.6 s
Load Regulation 0.0042 % /mA
Line Regulation 0.08 % /V
Efficiency 86 %
1.4700 1.50 1.5300
1.4625 1.50 1.5375 Reference Voltage VREF
1.4550 1.50 1.5450
V
CONDITIONS
Figure 2,
M AX761,
bootstrapped
V+ = 16.5V, normal operation, SHDN = 0V,
non-bootstrapped
Figure 2, bootstrapped
Figure 2, bootstrapped
Figure 2, M AX761, VI N = 5V, SHDN = 0V,
normal operation
Figure 2,
M AX762,
bootstrapped
V+ = 10.0V, shutdown mode, SHDN = V+
See Figure 4b
Figure 2, 0mA I LO AD 200mA, bootstrapped
Figure 2, bootstrapped
Figure 2, 4V VI N 6V, bootstrapped
Figure 2, bootstrapped, VO UT = 12V,
60mA I LO AD 120mA
Figure 3 or 5 with
external resistors.
M AX76_C
M AX76_E
M AX76_M
M AX76_C/E
M AX76_M
UNITS
0mA I LO AD 75mA,
3V V+ 12V
0mA ILO AD 150mA,
4.75V V+ 12V
0mA I LO AD 50mA,
3V V+ 15V
0mA ILO AD 100mA,
4.75V V+ 15V
M
A
X
7
6
1
/
M
A
X
7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
( V+ = 5V, I LO AD = 0mA, CREF = 0.1F, TA = TM I N to TM AX, typical values are at TA = + 25C, unless otherwise noted.)
Note 1: See Typical O perating Characteristics for output current capability versus input voltage. G uarantees based on correlation
to switching on and off times, on-resistance, and peak-current ratings.
PARAMETER
Voltage Trip Point
SYMBOL MIN TYP MAX
VFB
1.4550 1.50 1.5450
UNITS
V
-20 20
LX O n Resistance
LX Leakage Current
1.0 2.2
-30 30
A -10 10

-5 5
SHDN I nput High Voltage
-40 40 FB Leakage Current I FB
-60 60
nA
VI H 1.6 V
SHDN I nput Low Voltage VI L
1.4700 1.50 1.5300
0.4 V
1.4625 1.50 1.5375
SHDN Leakage Current -1 1 A
Reference Load Regulation
1.4700 1.50 1.5300
1.4625 1.50 1.5375
10
LBI Threshold Voltage
1.4550 1.50 1.5450
V
LBI Hysteresis 20 mV
LBI Leakage Current
Reference Line Regulation
-20 20 nA
15
mV
LBO Leakage Current -1 1 A
LBO Voltage VO L 0.4 V
LBI to LBO Delay 2.5 s
CONDITIONS
M AX76_M
M AX76_C
V+ > 5.0V
V+ = 16.5V,
LX = 17V
M AX76_E
M AX76_M
2.0V V+ 16.5V
2.0V V+ 16.5V
M AX76_C
M AX76_E
V+ = 16.5V, SHDN = 0V or V+
LBI falling
0A I LO AD 100A
V+ = 16.5V, VLBI = 1.5V
3.0V V+ 16.5V
V+ = 16.5V, VLBO = 16.5V
V+ = 5.0V, I SI NK = 1mA
O verdrive = 5mV
M AX76_C
M AX76_M
M AX76_E
30 100 V/V
M AX76_C/E
M AX76_M
M AX76_C
M AX76_M
M AX76_E
M
A
X
7
6
1
/
M
A
X
7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
4 _______________________________________________________________________________________
__________________________________________Typic al Operating Charac teristic s
( Circuit of Figure 2, TA = + 25C, unless otherwise noted.)
100
0
0.1 10 1000
EFFICIENCY vs. OUTPUT CURRENT
BOOTSTRAPPED
20
M
A
X
7
6
1
-0
1
OUTPUT CURRENT (mA)
E
F
F
I
C
I
E
N
C
Y

(
%
)
40
60
80
1 100
VIN = 10V
10
30
50
70
90
VIN = 5V
VIN = 2V
VOUT =12V
100
0
0.1 10 1000
EFFICIENCY vs. OUTPUT CURRENT
NON-BOOTSTRAPPED
20
M
A
X
7
6
1
-0
2
OUTPUT CURRENT (mA)
E
F
F
I
C
I
E
N
C
Y

(
%
)
40
60
80
1 100
VIN = 10V
10
30
50
70
90
VIN = 5V
VOUT =12V
2.00
0
0 1 3 6
QUIESCENT CURRENT vs.
INPUT VOLTAGE
0.50
1.50
M
A
X
7
6
1
-0
3
INPUT VOLTAGE (V)
Q
U
I
E
S
C
E
N
T

C
U
R
R
E
N
T

(
m
A
)
2 4
1.00
5
1.75
0.25
1.25
0.75
0.5 1.5 3.5 2.5 4.5 5.5
VOUT = 12V
BOOTSTRAPPED
(INTERNAL RESISTORS)
BOOTSTRAPPED
(EXTERNAL RESISTORS)
NON- BOOTSTRAPPED
400
0
3.0 6.0
MAXIMUM OUTPUT CURRENT vs.
INPUT VOLTAGE
100
300
M
A
X
7
6
1
-0
4
SUPPLY VOLTAGE (V)
M
A
X
I
M
U
M

O
U
T
P
U
T

C
U
R
R
E
N
T

(
m
A
)
4.0
200
5.0
350
50
250
150
3.5 4.5 5.5
NON- BOOTSTRAPPED
BOOTSTRAPPED
VOUT = 12V
3.5
0.5
-60 -20 60 140
NO-LOAD START-UP VOLTAGE
1.0
3.0
M
A
X
7
6
1
-0
7
TEMPERATURE (C)
N
O
-
L
O
A
D

S
T
A
R
T
-
U
P

V
O
L
T
A
G
E

(
V
)
20 100
2.0
-40 0 80 40 120
1.5
2.5
VOUT = 12V
BOOTSTRAPPED
(INTERNAL RESISTORS)
BOOTSTRAPPED
(EXTERNAL RESISTORS)
NON- BOOTSTRAPPED
(EXTERNAL RESISTORS)
250
0
-60 -20 60 140
REFERENCE OUTPUT RESISTANCE vs.
TEMPERATURE
50
M
A
X
7
6
1
-0
5
TEMPERATURE (C)
R
E
F
E
R
E
N
C
E

O
U
T
P
U
T

R
E
S
I
S
T
A
N
C
E

(

)
20 100
150
-40 0 80 40 120
100
200
100A
50A
10A 1.502
-60 -20 60 140
REFERENCE vs. TEMPERATURE
COEFFICIENT
M
A
X
7
6
1
-0
6
TEMPERATURE (C)
R
E
F
E
R
E
N
C
E

O
U
T
P
U
T


(
V
)
20 100 -40 0 80 40 120
1.500
1.498
1.496
1.494
1.492
1.504
1.506
2.2
1.3
0.1 10 1000
MAX761
START-UP VOLTAGE vs. RLOAD
M
A
X
7
6
1
-0
8
RLOAD (k)
S
T
A
R
T
-
U
P

V
O
L
T
A
G
E

(
V
)
1.4
1.5
1.6
1.7
2.1
2.0
1.8
1.9
1 100
VOUT = 12V
BOOTSTRAPPED
INTERNAL RESISTORS
1.6
0.4
-60 -20 60 140
LX ON-RESISTANCE vs.
TEMPERATURE
0.6
1.4
M
A
X
7
6
1
-0
9
TEMPERATURE (C)
L
X

O
N
-
R
E
S
I
S
T
A
N
C
E

(

)
20 100
1.0
-40 0 80 40 120
0.8
1.2
V+ = 12V
V+ = 5V
M
A
X
7
6
1
/
M
A
X
7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
_______________________________________________________________________________________ 5
1000
0.01
20 120
LX LEAKAGE vs. TEMPERATURE
10
100
M
A
X
7
6
1
-1
0
L
X

L
E
A
K
A
G
E

(
n
A
)
1
0.1
140 100 80 40 60
TEMPERATURE (C)
V+ = 15V
VLX = 16.5V
1.5
-60 -20 60 140
PEAK CURRENT AT LX vs. TEMPERATURE
M
A
X
7
6
1
-1
1
TEMPERATURE (C)
I
P
E
A
K


(
A
)
20 100 -40 0 80 40 120
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V+ = 12V
V+ = 5V
4.0
-60 -20 60 140
SHUTDOWN CURRENT
vs. TEMPERATURE
M
A
X
7
6
1
-1
2
TEMPERATURE (C)
I
C
C


(

A
)
20 100 -40 0 80 40 120
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V+ = 15V
V+ = 4V
V+ = 8V
8.5
7.5
-60 60
SWITCH-ON TIME vs. TEMPERATURE
8.0
M
A
X
7
6
1
-1
3
TEMPERATURE (C)
t
o
n


(

s
)
0 120
V+ = 5V
2.0
1.0
-60 60
SWITCH-OFF TIME vs. TEMPERATURE
1.5
M
A
X
7
6
1
-1
4
TEMPERATURE (C)
t
o
f
f


(

s
)
0 120
V+ = 5V
100
80
-60 60
POWER-SUPPLY CURRENT
vs. TEMPERATURE
90
M
A
X
7
6
1
-1
5
TEMPERATURE (C)
I
C
C


(

A
)
0 120
V+ = 3V
V+ = 16.5V
7
5
-60 60
SWITCH-ON/ SWITCH-OFF TIME RATIO
vs. TEMPERATURE
6
M
A
X
7
6
1
-1
6
TEMPERATURE (C)
t
o
n
/
t
o
f
f

R
A
T
I
O

(

s
/

s
)
0 120
V+ = 5V
SHDN RESPONSE TIME
ILOAD = 100mA, VIN = 5V
A: VOUT, 2V/ di v
B: SHDN (0V to 4V)
2ms/ di v
4V
0V
12V
5V
____________________________Typic al Operating Charac teristic s (c ontinued)
( Circuit of Figure 2, TA = + 25C, unless otherwise noted.)
M
A
X
7
6
1
/
M
A
X
7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
6 _______________________________________________________________________________________
LOADTRANSIENT RESPONSE

A: ILOAD, (0mA to 200mA)

B: VOUT , AC COUPLED, 100mV/ di v
VIN = 5V, VOUT = 12V
5s/ di v
200mA
0mA
A
B
_____________________________Typic al Operating Charac teristic s (c ontinued)
( Circuit of Figure 2, T
A
= + 25C, unless otherwise noted.)
LINETRANSIENT RESPONSE

A: VIN (4V to 6V)

B: VOUT, AC COUPLED, 20mV/ di v
IOUT = 50mA, VOUT = 12V
5ms/ di v
6V
4V
A
B
NAME FUNCTION
LBO
Low-battery output is an open-drain output that goes low when LBI is less than 1.5V.
Connect to V+ through a pull-up resistor. Leave LBO floating if not used.
LBI I nput to the internal low-battery comparator. Tie to G ND or V+ if not used.
PIN
1
2
FB
Feedback input. For fixed-output bootstrapped operation, connect FB to G ND. For
adjustable-output bootstrapped operation, connect a resistor divider between V+ , FB and
G ND. For non-bootstrapped operation, there is no fixed-output option. Connect a resistor
divider network between VO UT, FB and G ND. See Bootstrapped/Non-Bootstrapped
M odes section.
SHDN
Active-high TTL/CM O S logic-level input. I n shutdown mode ( SHDN = V+ ) , the internal
switch is turned off and the output voltage equals V+ minus a diode drop ( due to the DC
path from the input to the output) . Tie to G ND for normal operation.
REF
1.5V reference output that can source 100A for external loads. Bypass with 0.1F
or larger capacitor.
G ND G round
3
4
LX
Drain of the internal N-channel FET. LX has an output resistance of 1 and a peak current
limit of 1A.
V+ Power-supply input. I n bootstrapped mode, V+ is also the output voltage sense input.
5
6
7
8
______________________________________________________________Pin Desc ription
________________Detailed Desc ription
Operating Princ iple
The M AX761/M AX762 Bi C M O S step-up swi tch-mode
power supplies provide fixed outputs of 12V and 15V,
respectively. They have a unique control scheme that
combines the advantages of pulse-frequency modulation
( low supply current) and pulse-width modulation ( high
efficiency at high loads) . The internal N-channel power
M O SFET allows 1A peak currents, increasing the output
current capability over previous pulse-frequency-modu-
lati on ( PFM ) devi ces. Fi gure 1 shows the M A X761/
M AX762 block diagram.
The M AX761/M AX762 offer three main improvements
over prior solutions: ( 1) the converters operate with tiny
surface-mount i nductors ( less than 5mm di ameter)
because of their 300kHz switching frequency, ( 2) the
current-limited PFM control scheme allows 86% efficien-
cies over a wide range of load currents, and ( 3) the max-
imum supply current is only 110A.
Bootstrapped/Non-Bootstrapped Modes
Figures 2 and 3 show the standard application circuits
for bootstrapped and non-bootstrapped modes. I n boot-
strapped mode, the I C i s powered from the output
( VO UT) . I n other words, the current needed to power the
bootstrapped circuit is different from the V+ current the
chip consumes. The voltage applied to the gate of the
internal N-channel FET is switched from VO UT to ground,
providing more switch-gate drive and increasing the effi-
ciency of the DC-DC converter compared with non-boot-
strapped operation.
M
A
X
7
6
1
/
M
A
X
7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
_______________________________________________________________________________________ 7
N
N
N
LBI
LBI
LBO V+ FB
DUAL- MODE
COMPARATOR
REF
1.5V
REFERENCE
UNDER VOLTAGE
COMPARATOR
LOW INPUT
VOLTAGE
OSCILLATOR
CURRENT CONTROL
CIRCUITRY
CURRENT
COMPARATOR
Q S
R
Q TRIG
ONE- SHOT
Q TRIG
ONE- SHOT
0.1V 0.2V
2.5V
100mV
V+
LX
GND
ERROR
COMPARATOR
MAX761
MAX762
Figure 1. Simple Block Diagram
M
A
X
7
6
1
/
M
A
X
7
6
2
I n non-bootstrapped mode, the I C is powered from the
supply voltage, VI N, and operates with minimum supply
current. Since the voltage applied to the gate of the inter-
nal FET is reduced, efficiency declines with low input
voltages. Note: In non-bootstrapped mode, there is no
fixed-output operation; external resistors must be
used to set the output voltage. Use 1% external feed-
back resi stors when operati ng i n non-bootstrapped
mode ( Figure 3) .
Use bootstrapped mode when VI N is below approxi-
mately 4V. For VI N between 4V and 6V, the trade-off is
lower supply current in non-bootstrapped mode versus
hi gher output current i n bootstrapped mode ( see
Typical O perating Characteristics) .
Pulse-Frequenc y Modulation
(PFM) Control Sc heme
The M AX761/M AX762 use a proprietary current-limited
PFM control scheme. This control scheme combines
the ultra-low supply current of pulse-skipping PFM con-
verters with the high full-load efficiency characteristic of
current-mode pulse-width-modulation ( PWM ) convert-
ers. I t allows the devices to achieve high efficiency over
a wide range of loads, while the current-sense function
and hi gh operati ng frequency allow the use of ti ny
external components.
As with traditional PFM converters, the internal power
M O SFET i s turned on when the voltage comparator
senses the output i s out of regulati on ( Fi gure 1) .
However, unlike traditional PFM converters, switching is
accomplished through the combination of a peak cur-
rent limit and a pair of one-shots that set the maximum
on-ti me ( 8s) and mi ni mum off-ti me ( 1. 3s) for the
switch. O nce off, the minimum off-time one-shot holds
the switch off for 1. 3s. After this minimum time, the
switch either ( 1) stays off if the output is in regulation, or
( 2) turns on again if the output is out of regulation.
The M AX761/M AX762 also limit the peak inductor cur-
rent, allowing the devices to run in continuous-conduc-
ti on mode ( C C M ) and mai ntai n hi gh effi ci ency wi th
heavy loads ( Figure 4a) . This current-limiting feature is
a key component of the control circuitry. O nce turned
on, the switch stays on until either ( 1) the maximum on-
time one-shot turns it off ( 8s later) , or ( 2) the current
limit is reached.
To increase light-load efficiency, the current limit for the
first two pulses is set to half the peak current limit. I f
those pulses bring the output voltage into regulation,
the voltage comparator holds the M O SFET off, and the
current limit remains at half the peak current limit. I f the
output voltage is still out of regulation after two pulses,
the current limit for the next pulse is raised to the full
current limit of 1A ( Figure 4b) .
Internal vs. External Resistors
When external feedback resistors are used, an internal
undervoltage lockout system prevents start-up until V+
rises to about 2.7V. When external feedback resistors are
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
8 _______________________________________________________________________________________
Figure 2. Bootstrapped O perating Circuit
Figure 3. Non-Bootstrapped O perating Circuit
V
IN
=
+5V
LX
LBO
GND
MAX761
SHDN V+
REF
L1
18H
LBI
FB
D1
1N5817
C1
33F
C3
0.1F
C4
33F
C2
0.1F
R4
R3
100k
+12V at
150mA
LOW-BATTERY
OUTPUT
1
8
7
5
4
2
3
6
V
IN
LX
LBO
GND
MAX761
MAX762
SHDN
V+
REF
L1
18H
LBI
FB
D1
1N5817
C1 C2
C4
R4
R3
100k
ADJUSTABLE
OUTPUT (V
OUT
)
LOW-BATTERY
DETECT OUTPUT
C3
R2
8
2
5
4
7
6
1
3
LOW- BATTERY
DETECT
R4 = R3 ( )
V
TRIP
- V
REF
V
REF
R2 = R1 ( - 1)
V
OUT
V
REF
V
REF
= 1.5V NOMINAL
C1 = 33F
C2 = 0.1F
C3 = 0.1F
C4 = 33F
R1
7
used in a bootstrapped circuit ( Figure 5) , undervoltage
lockout prevents start-up at low i nput voltages; but
once started, operation can continue down to a lower
voltage that depends on the load.
There is no undervoltage lockout when the internal feed-
back resistors are used ( Figure 2) , and special circuitry
guarantees start-up at 2.0V. The start-up circuitry fixes
the duty cycle at 50% until V+ is driven to 2.5V, above
which the normal control system takes over.
Shutdown Mode
T he M A X761/M A X762 enter shutdown mode when
SHDN is high. I n this mode, the internal biasing circuitry
is turned off ( including the reference) and VO UT equals
V+ minus a diode drop ( due to the DC path from the
input to the output) . I n shutdown mode, the supply cur-
rent drops to less than 5A. SHDN is a TTL/CM O S logic
level input. Connect SHDN to G ND for normal operation.
LBO is high impedance during shutdown.
Modes of Operation
When deli veri ng hi gh output currents, the M A X761/
M AX762 operate in CCM . I n this mode, current always
flows in the inductor, and the control circuit adjusts the
switchs duty cycle on a cycle-by-cycle basis to maintain
regulation without exceeding the switch-current capabili-
ty. This provides excellent load-transient response and
high efficiency.
I n di sconti nuous-conducti on mode ( D C M ) , current
through the inductor starts at zero, rises to a peak value,
then ramps down to zero on each cycle. Although effi-
ciency is still excellent, the switch waveforms contain
ri ngi ng ( the i nductor' s self-resonant frequency) . Thi s
ringing is normal and poses no operational problems.
Low-Battery Detec tor
The M AX761/M AX762 provide a low-battery comparator
that compares the voltage on LBI to the 1.5V reference
voltage. When the LBI voltage is below VREF, LBO ( an
open-drain output) goes low. The low-battery compara-
tors 20mV of hysteresis adds noise immunity, prevent-
ing repeated triggering of LBO . Use a resistor-divider
network between V+ , LBI , and G ND to set the desired
trip voltage VTRI P ( Figure 3) . When SHDN is high, LBI is
i gnored and LBO i s hi gh i mpedance. T he value of
resistor R3 should be no larger than 500k to ensure
the LBI leakage current does not cause inaccuracies in
VTRI P.
__________________Design Proc edure
Setting the Output Voltage
The M AX761/M AX762s output voltage can be adjusted
from 5V to 16. 5V using external resistors R1 and R2
configured as shown in Figures 3 and 5. For adjustable-
output operati on, select feedback resi stor R1 i n the
10k to 250k range. Hi gher R 1 values wi thi n thi s
range give lowest supply current and best light-load
efficiency. R2 is given by:
R2 = ( R1) (
VO UT
- 1)
VREF
where VREF = 1.5V.
Note: Tie FB to GND for fixed-output operation
(bootstrapped mode only).
M
A
X
7
6
1
/
M
A
X
7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
_______________________________________________________________________________________ 9
Figure 4a. CCM , Heavy Load Current Waveform ( 500mA/div) Figure 4b. Light/M edium Load Current Waveform ( 500mA/div)
1A
500mA
1A
500mA
0A
M
A
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7
6
1
/
M
A
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7
6
2
Selec ting the Induc tor (L)
I n both CCM and DCM , practical inductor values range
from 10H to 50H. I f the inductor value is too low, the
current in the coil will ramp up to a high level before the
current-limit comparator can turn off the switch. The mini-
mum on-time for the switch ( tO N( min) ) is approximately
2.5s, so select an inductance that allows the current to
ramp up to ILI M /2 in no less than 2.5s. Choosing a value
of ILI M /2 allows the half-size pulses to occur, giving high-
er light-load efficiency and minimizing ripple. Hence, cal-
culate the minimum inductance value as:
L
( VI N( max) ) ( tO N( min) )
I LI M /2
O R
L ( VI N( max) ) ( 5)
where VI N( max) is in volts and L is in microhenries.
T he coi l s i nductance need not sati sfy thi s cri teri on
exactly, as the circuit can tolerate a wide range of val-
ues. Larger inductance values tend to produce physical-
ly larger coils and increase the start-up time, but are oth-
erwise acceptable. Smaller inductance values allow the
coil current to ramp up to higher levels before the switch
can turn off, producing higher ripple at light loads. I n
general, an 18H inductor is sufficient for most applica-
tions ( VI N 5V) . An 18H inductor is appropriate for
input voltages up to 3.6V, as calculated above. However,
the same 18H coil can be used with input voltages up
to 5V with only small increases in peak current, as shown
in Figures 4a and 4b.
I nductors with a ferrite core or equivalent are recom-
mended. The inductors incremental saturation-current
rating should be greater than the 1A peak current limit. I t
is generally acceptable to bias the inductor into satura-
tion by approximately 20% ( the point where the induc-
tance is 20% below the nominal value) . For highest effi-
ciency, use a coil with low DC resistance, preferably
under 100m. To minimize radiated noise, use a toroid,
a pot core, or a shielded coil.
Table 1 lists inductor types and suppliers for various
applications. The listed surface-mount inductors efficien-
cies are nearly equivalent to those of the larger through-
hole inductors.
Diode Selec tion
T he M A X761/M A X762 s hi gh swi tchi ng frequency
demands a high-speed rectifier. Use a Schottky diode
with a 1A average current rating, such as a 1N5817. For
high-temperature applications, use a high-speed silicon
di ode, such as the M UR105 or the EC 11FS1. These
di odes have lower hi gh-temperature leak age than
Schottky diodes ( Table 1) .
Capac itor Selec tion
Output Filter Capacitor
The primary criterion for selecting the output filter capac-
itor ( C 4) is low effective series resistance ( ESR) . The
product of the inductor current variation and the output
filter capacitors ESR determines the amplitude of the
hi gh-frequency ri pple seen on the output voltage. A
33F, 16V Sanyo O S-CO N capacitor with 100m ESR
typically provides 100mV ripple when stepping up from
5V to 12V at 150mA.
Because the output filter capacitors ESR affects efficien-
cy, use low-ESR capacitors for best performance. The
smallest low-ESR SM T tantalum capaci tors currently
available are the Sprague 595D series. Sanyo O S-CO N
organi c semi conductor through-hole capaci tors and
Nichicon PL series also exhibit very low ESR. Table 1
lists some suppliers of low-ESR capacitors.
Input Bypass Capacitors
The input bypass capacitor, C1, reduces peak currents
drawn from the voltage source, and also reduces noise
at the voltage source caused by the M AX761/M AX762s
switching action. The input voltage source impedance
determines the size of the capacitor required at the V+
i nput. A s wi th the output fi lter capaci tor, a low-ESR
capacitor is recommended. For output currents up to
250mA, 33F ( C1) is adequate, although smaller bypass
capacitors may also be acceptable. Bypass the I C sepa-
rately with a 0.1F ceramic capacitor, C2, placed close
to the V+ and G ND pins.
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
10 ______________________________________________________________________________________
V
IN
LX
GND
MAX761
MAX762
SHDN
V+
REF
L1
18H
LBI
FB
D1
1N5817
C2
C4
V
OUT
C3
R2
8
2
5
4
7
6
3
R2 = R1 ( - 1)
V
OUT
V
REF
C1 = 33F
C2 = 0.1F
C3 = 0.1F
C4 = 33F
C1
R1
V
REF
= 1.5V NOMINAL
Figure 5. Bootstrapped O peration with Adjustable O utput
Reference Capacitor
Bypass REF with a 0.1F capacitor. REF can source up
to 100A.
Setting the Low-Battery Detec tor Voltage
T o set the low-battery detector s falli ng tri p voltage
( VTRI P) , select R3 between 10k and 500k ( Figures 2
and 3) , and calculate R4 as follows:
R4 = R3 [
( VTRI P - VREF)
]
VREF
where VREF = 1.5V.
The rising trip voltage is higher because of the compara-
tors hysteresis of approximately 20mV, and can be cal-
culated by:
VTRI P( rising) = ( VREF + 20mV) ( 1 + R4/R3) .
C onnect a hi gh-value resi stor ( larger than R3 + R4)
between LBI and LBO if additional hysteresis is required.
Connect a pull-up resistor ( e.g., 100k) between LBO
and VO UT. Tie LBI to G ND or V+ and leave LBO floating
if the low-battery detector is not used.
___________Applic ations Information
Layout Considerations
Proper PC board layout is essential because of high cur-
rent levels and fast switching waveforms that radiate
noise. M inimize ground noise by connecting G ND, the
input bypass-capacitor ground lead, and the output filter-
capacitor ground lead to a single point ( star ground con-
figuration) . Also minimize lead lengths to reduce stray
capacitance, trace resistance, and radiated noise. The
traces connected to FB and LX, in particular, must be
short. Place bypass capacitor C2 as close as possible to
V+ and G ND.
M
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7
6
1
/
M
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7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
______________________________________________________________________________________ 11
INDUCTORS DIODES
Sumida
CD54-180 (22H)

Coiltronics
CTX 100-series
Matsuo
267 series

Surface Mount
Sanyo
OS-CON series
Low-ESR organic
semiconductor
Sumida
RCH855-180M Miniature Through-Hole
PRODUCTION METHOD
Nichicon
PL series
Low-ESR electrolytics

United Chemi-Con
LXF series
Renco
RL 1284-18
Low-Cost Through-Hole
CAPACITORS
Nihon
EC10 series
Motorola
1N5817,
MUR105
Table 1. Component Suppliers
Coiltronics (USA) (407) 241-7876 FAX (407) 241-9339
Matsuo (USA) (714) 969-2491 FAX (714) 960-6492
Matsuo (Japan) 81-6-337-6450 FAX 81-6-337-6456
Nichicon (USA) (708) 843-7500 FAX (708) 843-2798
Nihon (USA) (805) 867-2555 FAX (805) 867-2556
Renco (USA) (516) 586-5566 FAX (516) 586-5562
Sanyo (USA) (619) 661-6835 FAX (619) 661-1055
Sanyo (Japan) (0720) 70-1005 FAX (0720) 70-1174
Sumida (USA) (708) 956-0666
Sumida (Japan) 81-3-607-5111 FAX 81-3-607-5144
United Chem-Con (USA) (714) 255-9500 FAX (714) 255-9400
M axim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a M axim product. No circuit patent licenses are
implied. M axim reserves the right to change the circuitry and specifications without notice at any time.
12 __________________Maxim Integrated Produc ts, 120 San Gabriel Drive, Sunnyvale, CA 94086 (408) 737-7600
1993 M axim I ntegrated Products Printed USA is a registered trademark of M axim I ntegrated Products.
M
A
X
7
6
1
/
M
A
X
7
6
2
12V/15V or Adjustable, High-Effic ienc y,
Low I
Q
, Step-Up DC-DC Converters
TRANSI STO R CO UNT: 492;
SUBSTRATE CO NNECTED TO V+ .
___________________Chip Topography
REF
LBO
0 . 1 4 2 "
( 3 . 6 0 7 mm)
0 . 0 8 0 "
( 2 . 0 3 0 mm)

FB
SHDN
GND
LX
V+

LBI