2SK2926(L), 2SK2926(S)

Silicon N Channel MOS FET

High Speed Power Switching
ADE-208-535
1st. Edition
Features
Low on-resistance
R
DS(on)
= 0.042 typ.
4V gate drive devices.
High speed switching
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK2
D
G
S
2SK2926(L), 2SK2926(S)
2
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
20 V
Drain current I
D
15 A
Drain peak current I
D(pulse)
*
1
60 A
Body to drain diode reverse drain current I
DR
15 A
Avalanche current I
AP
*
3
15 A
Avalanche energy E
AR
*
3
19 mJ
Channel dissipation Pch*
2
25 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Notes: 1. PW 10s, duty cycle 1 %
2. Value at Ta = 25C
3. Value at Ta = 25C, Rg 50
2SK2926(L), 2SK2926(S)
3
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60 V I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20 V I
G
= 100A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
10 A V
DS
= 60 V, V
GS
= 0
Gate to source leak current I
GSS
10 A V
GS
= 16V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
1.5 2.5 V I
D
= 1mA, V
DS
= 10V
Static drain to source on state R
DS(on)
0.042 0.055 I
D
= 8A, V
GS
= 10V*
1
resistance R
DS(on)
0.065 0.11 I
D
= 8A, V
GS
= 4V*
1
Forward transfer admittance |y
fs
| 7 11 S I
D
= 8A, V
DS
= 10V*
1
Input capacitance Ciss 500 pF V
DS
= 10V
Output capacitance Coss 260 pF V
GS
= 0
Reverse transfer capacitance Crss 110 pF f = 1MHz
Turn-on delay time t
d(on)
10 ns V
GS
= 10V, I
D
= 8A
Rise time t
r
80 ns R
L
= 3.75
Turn-off delay time t
d(off)
100 ns
Fall time t
f
110 ns
Body to drain diode forward
voltage
V
DF
1.0 V I
F
= 15A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
55 ns I
F
= 15A, V
GS
= 0
diF/ dt = 50A/s
Note: 1. Pulse test
2SK2926(L), 2SK2926(S)
4
Main Characteristics
40
30
20
10
0
50 100 150 200
1000
300
100
30
3
10
0.1 0.3 1 3 10 30 100
20
16
12
8
4
0
2 4 6 8 10
20
16
12
8
4
0
1 2 3 4 5
0.3
0.1
1
1
0

s
1

m
s
P
W

=

1
0

m
s

(
1
s
h
o
t
)
Ta = 25C
1
0
0

s
10 V
C
h
a
n
n
e
l

D
i
s
s
i
p
a
t
i
o
n




P
c
h


(
W
)
Case Temperature Tc (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
D
r
a
i
n

C
u
r
r
e
n
t




I






(
A
)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
D
r
a
i
n

C
u
r
r
e
n
t




I






(
A
)
D
Typical Output Characteristics
Gate to Source Voltage V (V) GS
D
r
a
i
n

C
u
r
r
e
n
t




I








(
A
)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
D
C

O
p
e
r
a
t
i
o
n

(
T
c

=

2
5

C
)
6 V 5 V
3.5 V
4 V
3 V
V = 2.5 V
GS
Pulse Test
4 .5 V
Tc = 75C
25C
25C
V = 10 V
Pulse Test
DS
2SK2926(L), 2SK2926(S)
5
2.0
1.6
1.2
0.8
0.4
0 4 8 12 16 20 5 20 100 1 10 50 2
0.20
0.16
0.12
0.08
0.04
40 0 40 80 120 160
0
0.1 0.2 1 5 20
20
2
5
1
0.5
1.0
0.2
0.5
0.1
0.02
0.01
0.05
0.5 2
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V













(
V
)
D
S
(
o
n
)
D
r
a
i
n

t
o

S
o
u
r
c
e

S
a
t
u
r
a
t
i
o
n

V
o
l
t
a
g
e
Drain Current I (A)
D
D
r
a
i
n

t
o

S
o
u
r
c
e

O
n

S
t
a
t
e

R
e
s
i
s
t
a
n
c
e
R















(




)

D
S
(
o
n
)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (C)
R













(



)
D
S
(
o
n
)
S
t
a
t
i
c

D
r
a
i
n

t
o

S
o
u
r
c
e

o
n

S
t
a
t
e

R
e
s
i
s
t
a
n
c
e

Static Drain to Source on State Resistance

vs. Temperature
Drain Current I (A)
D
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e


|
y




|

(
S
)
f
s
Forward Transfer Admittance vs.
Drain Current
Pulse Test
10 A
5 A
I = 20 A D
V = 4 V
GS
Pulse Test
10 V
I = 10 A D
V = 4 V
GS
10 V
5 A
Pulse Test
5 A 20 A 10 A
10
10
V = 10 V
Pulse Test
DS
25 C
Tc = 25 C
75 C
2SK2926(L), 2SK2926(S)
6
0.1 0.5 1 2 10 0.2 5 0 10 20 30 40 50
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
8 16 24 32 400
0
1000
300
100
30
10
0.1 0.2 1 5 10
V = 10 V
25 V
50 V
DD
V = 50 V
25 V
10 V
DD
500
200
100
20
50
10
5
2000
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 15A
D
V
GS
V
DS
3
1
0.5 2
Reverse Drain Current I (A)
DR
R
e
v
e
r
s
e

R
e
c
o
v
e
r
y

T
i
m
e



t
r
r


(
n
s
)
Body to Drain Diode Reverse
Recovery Time
C
a
p
a
c
i
t
a
n
c
e



C


(
p
F
)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
r
a
i
n

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e




V








(
V
)
D
S
G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e




V








(
V
)
G
S
Dynamic Input Characteristics
Drain Current I (A)
D
S
w
i
t
c
h
i
n
g

T
i
m
e



t


(
n
s
)
Switching Characteristics
20
20
r
t
V = 10 V, V = 30 V
PW = 5 s, duty < 1 %
GS DD
t
f
d(on)
t
d(off)
t
di / dt = 50 A / s
V = 0, Ta = 25 C
GS
2SK2926(L), 2SK2926(S)
7
50
40
30
20
10
0
0.4 0.8 1.2 1.6 2.0
V = 0, 5 V
GS
10 V
5 V
200
160
120
80
40
25 50 75 100 125 150
0
Channel Temperature Tch (C)
R
e
p
e
t
i
v
e

A
v
a
l
a
n
c
h
e

E
n
e
r
g
y



E







(
m
J
)
A
R
Maximum Avalanche Energy vs.
Channel Temperature Derating
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = L I
2
1
V
V V
AR
AP
DSS
DSS DD
2
Avalanche Test Circuit Avalanche Waveform
Source to Drain Voltage V (V)
SD
R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t



I








(
A
)
D
R
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
I = 40 A
V = 25 V
duty < 1 %
Rg > 50
AP
DD

2SK2926(L), 2SK2926(S)
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
Switching Time Test Circuit Switching Time Waveform
3
1
0.3
0.1
0.03
0.01
10 100 1 m 10 m 100 m 1 10
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 5 C/W, Tc = 25 C

D = 1
0.5
0.2
0
.
0
1
0
.
0
2
0.1
0
.0
5
1

s
h
o
t

P
u
l
s
e
Tc = 25C
Pulse Width PW (S)
N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e
s



(
t
)

Normalized Transient Thermal Impedance vs. Pulse Width

2SK2926(L), 2SK2926(S)
9
Package Dimensions
Unit: mm
6.5 0.5
5.4 0.5
1.15 0.1
2.3 0.2
0.55 0.1
2.29 0.5
0.55 0.1 1.2 typ
1
.
7

0
.
5
5
.
5

0
.
5
3
.
1

0
.
5
1
6
.
2

0
.
5
2.29 0.5
6.5 0.5
5.4 0.5
1.15 0.1
0.8 0.1
2.3 0.5
0.55 0.1
1
.
7

0
.
5
5
.
5

0
.
5
9
.
5

0
.
5
2
.
5

0
.
5
2.29 0.5 2.29 0.5
1
.
2

M
a
x
0.55 0.1
0 ~ 0.25
0.8 0.1
type L S type
4
.
7

0
.
5
Hitachi
EIAJ ( L type)
EIAJ ( S type)
JEDEC
DPAK2
SC63
SC64

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