BC817UPN

NPN/PNP Silicon Transistor Array

For AF input stages and driver applications

5
6

High current gain

Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP

3
2

Transistors in one package

Tape loading orientation

VPW09197
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device

Top View
6 5 4

B2

E2

TR2

W1s

TR1

Position in tape: pin 1

opposite of feed hole side

1 2 3
Direction of Unreeling

Type
BC817UPN

C1

SC74_Tape

Marking
1Bs

E1

B1

C2
EHA07177

Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Maximum Ratings
Parameter

Symbol

Collector-emitter voltage

VCEO

45

Collector-base voltage

VCBO

50

Emitter-base voltage

VEBO

DC collector current

IC

Peak collector current

ICM

Base current

IB

100

Peak base current

IBM

200

Total power dissipation, TS = 115 C

Ptot

330

mW

Junction temperature

Tj

150

Storage temperature

Tstg

Value

500
1

Unit
V

mA
A
mA

-65 ... 150

Thermal Resistance
RthJS

105

Junction - soldering point1)

K/W

1For calculation of R
thJA please refer to Application Note Thermal Resistance

Aug-21-2002

BC817UPN
Electrical Characteristics at TA=25C, unless otherwise specified
Symbol
Values
Parameter

Unit

min.

typ.

max.

V(BR)CEO

45

V(BR)CBO

50

V(BR)EBO

ICBO

100

nA

ICBO

50

IEBO

100

nA

DC Characteristics
Collector-emitter breakdown voltage

IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 A, IE = 0
Emitter-base breakdown voltage
IE = 10 A, IC = 0
Collector cutoff current
VCB = 25 V, IE = 0
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 C
Emitter cutoff current
VEB = 4 V, IC = 0
-

hFE

DC current gain 1)
IC = 100 mA, VCE = 1 V

160

250

400

IC = 300 mA, VCE = 1 V

100

Collector-emitter saturation voltage1)

VCEsat

0.7

IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)

VBEsat

1.2

fT

170

MHz

Ccb

pF

Ceb

60

IC = 500 mA, IB = 50 mA

AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz

1) Pulse test: t < 300 s; D < 2%

Aug-21-2002

BC817UPN
Collector cutoff current ICBO = f (TA )

Total power dissipation Ptot = f (TS )

VCB = 25V
400

10 5

mW

CBO

BC 817/818

EHP00221

nA
10 4

Ptot

300

250

max

10 3

200

typ

10 2

150

100

10 1
50

0
0

20

40

60

80

120 C

100

10 0

150

50

100

TS

150

C
TA

Permissible Pulse Load RthJS = f (tp)

Permissible Pulse Load

Ptotmax / PtotDC = f (tp)

10 3

10 3

RthJS

10

Ptotmax / PtotDC

K/W

D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5

10 2

10 1

D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0

10 0

10 -1 -6
10

10

-5

10

-4

10

-3

10

10 1

-2

10

10 0 -6
10

tp

10

-5

10

-4

10

-3

10

-2

10

tp

Aug-21-2002

BC817UPN
Collector-emitter saturation voltage

Base-emitter saturation voltage

IC = f (VCEsat ), hFE = 10

IC = f (VBEsat ), hFE = 10

10 3

BC 817/818

EHP00223

mA

150 C
25 C
-50 C

10 2

BC 817/818

10 3

EHP00222

mA
150 C
25 C
-50 C

10 2

10 1

10 1

10 0

10 0

10 -1

0.2

0.4

0.6

10 -1

0.8

1.0

2.0

3.0

4.0

V BEsat

VCEsat

DC current gain hFE = f (IC )

Transition frequency fT = f (IC)

VCE = 5V

VCE = 5V

10 3
h FE 5

BC 817/818

EHP00224

10 3
fT

100 C
25 C

BC 817/818

EHP00218

MHz
5

-50 C
10

5
10 2

10 1
5

10 0
10 -1

10

10

10

mA 10

10 1
10 0

10 1

10 2

mA

10 3

Aug-21-2002

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.