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High Linearity:
0.02% Linearity Allows Simple System Calibration
No-Hassle Simplicity:
True RMS-DC Conversion with Only One External
Capacitor
Delta Sigma Conversion Technology
Flexible Inputs:
Differential or Single Ended
Rail-to-Rail Common Mode Voltage Range
Up to 1V
PEAK
Differential Voltage
Flexible Output:
Rail-to-Rail Output
Separate Output Reference Pin Allows Level Shifting
Small Size:
Space Saving 8-Pin MSOP Package
1968 TA01
4.5V TO 5.5V
OUTPUT
DIFFERENTIAL
INPUT
LTC1968
V
+
0.1F
OPT. AC
COUPLING
EN GND
OUT RTN
IN1
IN2
TYPICAL APPLICATIO
U
V
IN
(mV AC
RMS
)
0
1.0
L
I
N
E
A
R
I
T
Y
E
R
R
O
R
(
V
O
U
T
m
V
D
C
V
I
N
m
V
A
C
R
M
S
)
0.8
0.6
0.4
0.2
0
0.2
100 200 300 400
1968 TA01b
500
LTC1968,
60Hz SINEWAVE
CONVENTIONAL
LOG/ANTILOG
Linearity Performance
, LTC and LT are registered trademarks of Linear Technology Corporation.
Protected under U.S. Patent Numbers 6,359,576, 6,362,677 and 6,516,291
2
LTC1968
1968f
Supply Voltage
V
+
to GND............................................................. 6V
Input Currents (Note 2) ..................................... 10mA
Output Current (Note 3) ..................................... 10mA
ENABLE Voltage ......................................... 0.3V to 6V
OUT RTN Voltage........................................ 0.3V to V
+
Operating Temperature Range (Note 4)
LTC1968C/LTC1968I ......................... 40C to 85C
Specified Temperature Range (Note 5)
LTC1968C/LTC1968I ......................... 40C to 85C
Maximum Junction Temperature ......................... 150C
Storage Temperature Range ................ 65C to 150C
Lead Temperature (Soldering, 10 sec)................. 300C
ORDER PART
NUMBER
LTC1968CMS8
LTC1968IMS8
T
JMAX
= 150C,
JA
= 220C/ W
ABSOLUTE AXI U RATI GS
WW WU
PACKAGE/ORDER I FOR ATIO
U U W
(Note 1)
MS8 PART MARKING
LTAFG
The denotes specifications which apply over the full operating
temperature range, otherwise specifications are T
A
= 25C. V
+
= 5V, V
OUTRTN
= 2.5V, C
AVE
= 10F, V
IN
= 200mV
RMS
, V
ENABLE
= 0.5V
unless otherwise noted.
ELECTRICAL CHARACTERISTICS
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The temperature grade (I or C) is indicated on the shipping container.
1
2
3
4
GND
IN1
IN2
NC
8
7
6
5
ENABLE
V
+
OUT RTN
V
OUT
TOP VIEW
MS8 PACKAGE
8-LEAD PLASTIC MSOP
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Accuracy
G
ERR
Low Frequency Gain Error 50Hz to 20kHz Input (Notes 6, 7) 0.1 0.3 %
0.4 %
V
OOS
Output Offset Voltage (Notes 6, 7) 0.2 0.75 mV
V
OOS
/T Output Offset Voltage Drift (Note 11) 2 10 V/C
LIN
ERR
Linearity Error 50mV to 350mV (Notes 7, 8) 0.02 0.15 %
PSRRG Power Supply Rejection (Note 9) 0.02 0.20 %/V
0.25 %/V
V
IOS
Input Offset Voltage (Notes 6, 7, 10) 0.4 1.5 mV
V
IOS
/T Input Offset Voltage Drift (Note 11) 2 10 V/C
Additional Error vs Crest Factor (CF)
CF = 3 60Hz Fundamental, 200mV
RMS
0.2 mV
CF = 5 60Hz Fundamental, 200mV
RMS
5 mV
Input Characteristics
V
IMAX
Maximum Peak Input Swing Accuracy = 1% (Note 14) 1 1.05 V
I
VR
Input Voltage Range 0 V
+
V
Z
IN
Input Impedance Average, Differential (Note 12) 1.2 M
Average, Common Mode (Note 12) 100 M
CMRRI Input Common Mode Rejection (Note 13) 50 400 V/V
V
IMIN
Minimum RMS Input 5 mV
PSRRI Power Supply Rejection (Note 9) 250 700 V/V
3
LTC1968
1968f
The denotes specifications which apply over the full operating
temperature range, otherwise specifications are T
A
= 25C. V
+
= 5V, V
OUTRTN
= 2.5V, C
AVE
= 10F, V
IN
= 200mV
RMS
, V
ENABLE
= 0.5V
unless otherwise noted.
ELECTRICAL CHARACTERISTICS
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The inputs (IN1, IN2) are protected by shunt diodes to GND and
V
+
. If the inputs are driven beyond the rails, the current should be limited
to less than 10mA.
Note 3: The LTC1968 output (V
OUT
) is high impedance and can be
overdriven, either sinking or sourcing current, to the limits stated.
Note 4: The LTC1968C/LTC1968I are guaranteed functional over the
operating temperature range of 40C to 85C.
Note 5: The LTC1968C is guaranteed to meet specified performance from
0C to 70C. The LTC1968C is designed, characterized and expected to
meet specified performance from 40C to 85C but is not tested nor QA
sampled at these temperatures. The LTC1968I is guaranteed to meet
specified performance from 40C to 85C.
Note 6: High speed automatic testing cannot be performed with
C
AVE
= 10F. The LTC1968 is 100% tested with C
AVE
= 47nF.
Note 7: The LTC1968 is 100% tested with DC and 10kHz input signals.
Measurements with DC inputs from 50mV to 350mV are used to calculate
the four parameters: G
ERR
, V
OOS
, V
IOS
and linearity error. Correlation tests
have shown that the performance limits can be guaranteed with the
additional testing being performed to guarantee proper operation of all
internal circuitry.
Note 8: The LTC1968 is inherently very linear. Unlike older log/antilog
circuits, its behavior is the same with DC and AC inputs, and DC inputs are
used for high speed testing.
Note 9: The power supply rejections of the LTC1968 are measured with
DC inputs from 50mV to 350mV. The change in accuracy from V
+
= 4.5V
to V
+
= 5.5V is divided by 1V.
Note 10: Previous generation RMS-to-DC converters required nonlinear
input stages as well as a nonlinear core. Some parts specify a DC reversal
error, combining the effects of input nonlinearity and input offset voltage.
The LTC1968 behavior is simpler to characterize and the input offset
voltage is the only significant source of DC reversal error.
Note 11: Guaranteed by design.
Note 12: The LTC1968 is a switched capacitor device and the input/output
impedance is an average impedance over many clock cycles. The input
impedance will not necessarily lead to an attenuation of the input signal
measured. Refer to the Applications Information section titled Input
Impedance for more information.
Note 13: The common mode rejection ratios of the LTC1968 are measured
with DC inputs from 50mV to 350mV. The input CMRR is defined as the
change in V
IOS
measured with the input common mode voltage at 0V and
V
+
, divided by V
+
. The output CMRR is defined as the change in V
OOS
measured with OUT RTN = 0V and OUT RTN = V
+
350mV divided by
V
+
350mV.
Note 14: The LTC1968 input and output voltage swings are limited by
internal clipping. However, its topology is relatively tolerant of
momentary internal clipping.
Note 15: The LTC1968 exploits oversampling and noise shaping to reduce
the quantization noise of internal 1-bit analog-to-digital conversions. At
higher input frequencies, increasingly large portions of this noise are
aliased down to DC. Because the noise is shifted in frequency, it becomes
a low frequency rumble and is only filtered at the expense of increasingly
long settling times. The LTC1968 is inherently wideband, but the output
accuracy is degraded by this aliased noise.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Output Characteristics
OVR Output Voltage Range 0 V
+
V
Z
OUT
Output Impedance (Note 12) 10 12.5 16 k
CMRRO Output Common Mode Rejection (Note 13) 50 250 V/V
V
OMAX
Maximum Differential Output Swing Accuracy = 1%, DC Input (Note 14) 1.0 1.05 V
0.9 V
PSRRO Power Supply Rejection (Note 9) 250 1000 V/V
Frequency Response
f
1P
1% Additional Gain Error (Note 15) 500 kHz
f
3dB
3dB Frequency (Note 15) 15 MHz
Power Supplies
V
+
Supply Voltage 4.5 5.5 V
I
S
Supply Current IN1 = 20mV, IN2 = 0V 2.3 2.7 mA
IN1 = 200mV, IN2 = 0V 2.4 mA
Shutdown Characteristics
I
SS
Supply Current V
ENABLE
= 4.5V 0.1 10 A
I
IH
ENABLE Pin Current High V
ENABLE
= 4.5V 1 0.1 A
I
IL
ENABLE Pin Current Low V
ENABLE
= 0.5V 3 0.5 0.1 A
V
TH
ENABLE Threshold Voltage 2.1 V
V
HYS
ENABLE Threshold Hysteresis 0.1 V
5-1
Semiconductor
Features
25A and 28A, 80V and 100V
r
DS(ON)
= 0.077 and 0.100
Single Pulse Avalanche Energy Rated
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Components to PC Boards
Description
These are N-Channel enhancement mode silicon gate
power eld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specied level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17421.
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-262AA
JEDEC TO-263AB
Ordering Information
PART NUMBER PACKAGE BRAND
IRF540 TO-220AB IRF540
IRF541 TO-220AB IRF541
IRF542 TO-220AB IRF542
IRF543 TO-220AB IRF543
RF1S540 TO-262AA RF1S540
RF1S540SM TO-263AB RF1S540SM
NOTE: When ordering, use the entire part number. Add the sufx 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURCE
November 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright Harris Corporation 1997
File Number 2309.3
IRF540, IRF541, IRF542,
IRF543, RF1S540, RF1S540SM
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,
N-Channel Power MOSFETs
5-2
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specied
IRF540, RF1S540,
RF1S540SM IRF541 IRF542 IRF543 UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V
DS
100 80 100 80 V
Drain to Gate Voltage (R
GS
= 20k) (Note 1) . . . . . . . V
DGR
100 80 100 80 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
28
20
28
20
25
17
25
17
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I
DM
110 110 100 100 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
20 20 20 20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . P
D
150 150 150 150 W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
AS
230 230 230 230 mJ
Operating and Storage Temperature . . . . . . . . . . . . T
J,
T
STG
-55 to 175 -55 to 175 -55 to 175 -55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . T
pkg
300
260
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 150
o
C.
Electrical Specications T
C
= 25
o
C, Unless Otherwise Specied
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250A, V
GS
= 0V (Figure 10)
IRF540, IRF542,
RF1S540, RF1S540SM
100 - - V
IRF541, IRF543 80 - - V
Gate to Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250A 2 - 4 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - 25 A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 150
o
C
- - 250 A
On-State Drain Current (Note 2) I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= 10V
(Figure 7)
IRF540, IRF541,
RF1S540, RF1S540SM
28 - - A
IRF542, IRF543 25 - - A
Gate to Source Leakage Current I
GSS
V
GS
= 20V - - 100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 17A, V
GS
= 10V (Figures 8, 9)
IRF540, IRF541,
RF1S540, RF1S540SM
- 0.060 0.077
IRF542, IRF543 - 0.080 0.100
Forward Transconductance (Note 2) g
fs
V
DS
50V, I
D
= 17A (Figure 12) 8.7 13 - S
Turn-On Delay Time t
d(ON)
V
DD
= 50V
,
I
D
28A, R
G
9.1, R
L
= 1.7
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
- 15 23 ns
Rise Time t
r
- 70 110 ns
Turn-Off Delay Time t
d(OFF)
- 40 60 ns
Fall Time t
f
- 50 75 ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 28A, V
DS
= 0.8 x Rated
BV
DSS
, I
g(REF)
= 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Op-
erating Temperature
- 38 59 nC
Gate to Source Charge Q
gs
- 8 - nC
Gate to Drain Miller Charge Q
gd
- 21 - nC
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-3
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 11)
- 1450 - pF
Output Capacitance C
OSS
- 550 - pF
Reverse Transfer Capacitance C
RSS
- 100 - pF
Internal Drain Inductance L
D
Measured From the
Contact Screw on Tab
To Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measured From the
Drain Lead, 6mm
(0.25in) from Package to
Center of Die
- 4.5 - nH
Internal Source Inductance L
S
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction to Case R
JC
- - 1
o
C/W
Thermal Resistance
Junction to Ambient
R
JA
Free Air Operation - - 80
o
C/W
R
JA
RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad
- - 62
o
C/W
Source to Drain Diode Specications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
SD
Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Diode
- - 28 A
Pulse Source to Drain Current
(Note 3)
I
SDM
- - 110 A
Source to Drain Diode Voltage (Note 2) V
SD
T
J
= 25
o
C, I
SD
= 27A, V
GS
= 0V (Figure 13) - - 2.5 V
Reverse Recovery Time t
rr
T
J
= 25
o
C, I
SD
= 28A, dI
SD
/dt = 100A/s 70 150 300 ns
Reverse Recovery Charge Q
RR
T
J
= 25
o
C, I
SD
= 28A, dI
SD
/dt = 100A/s 0.44 1.0 1.9 C
NOTES:
2. Pulse test: pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 440H, R
G
= 25, peak I
AS
= 28A. (Figures 15, 16).
Electrical Specications T
C
= 25
o
C, Unless Otherwise Specied (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
L
S
L
D
G
D
S
G
D
S
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-4
Typical Performance Curves Unless Otherwise Specied
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25 50 75 100 125 150 175 0
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
M
U
L
T
I
P
L
I
E
R
0
0.2
0.4
0.6
0.8
1.0
1.2
12
6
0
25 50 75 100 125 150
24
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
30
175
18
IRF542, IRF543
IRF540, IRF541
RF1S540, RF1S540SM
t
1
, RECTANGULAR PULSE DURATION (s)
10
Z
J
C
,
T
R
A
N
S
I
E
N
T
10
-3
10
-2
10
-1
1
1
10
-5
10
-4
10
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.2
0.5
0.01
0.05
SINGLE PULSE
T
H
E
R
M
A
L
I
M
P
E
D
A
N
C
E
(
o
C
/
W
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
10
1
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
100
100
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
SINGLE PULSE
IRF540, 1, RF1S540, SM
IRF542, 3
IRF542, 3
IRF541, 3
DC
100s
10s
1ms
I
R
F
5
4
0
,
2
R
F
1
S
5
4
0
,
S
M 10ms
IRF540, 1, RF1S540, SM
T
C
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
0
0 12 24 36 48
10
20
30
40
50
60
V
GS
= 7V
V
GS
= 5V
V
GS
= 4V
80s PULSE TEST
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-5
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves Unless Otherwise Specied (Continued)
0
10
0 1.0 2.0 3.0 5.0
20
30
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
V
GS
= 10V
40
4.0
V
GS
= 4V
V
GS
= 7V
V
GS
= 5V
50
V
GS
= 8V
80s PULSE TEST
0 4 6 8 10 2
0.1
1
10
I
D
(
O
N
)
,
O
N
-
S
T
A
T
E
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
25
o
C 175
o
C
V
DS
50V 80s PULSE TEST
DUTY CYCLE = 0.5% MAX
0
0.4
0.6
0.8
25 50 75 100
r
D
S
(
O
N
)
,
D
R
A
I
N
T
O
S
O
U
R
C
E
I
D
, DRAIN CURRENT (A)
125
1.0
0
0.2
V
GS
= 10V
V
GS
= 20V
80s PULSE DURATION
O
N
R
E
S
I
S
T
A
N
C
E
(
)
N
O
R
M
A
L
I
Z
E
D
D
R
A
I
N
T
O
S
O
U
R
C
E
3.0
1.8
1.2
0.6
0.0
-60 -40 -20 0 20 40 60
T
J
, JUNCTION TEMPERATURE (
o
C)
100 120 140 160 180
2.4
80
V
GS
= 10V, I
D
= 28A
O
N
R
E
S
I
S
T
A
N
C
E
1.25
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
R
M
A
L
I
Z
E
D
D
R
A
I
N
T
O
S
O
U
R
C
E
B
R
E
A
K
D
O
W
N
V
O
L
T
A
G
E
100 120 140 160 180
1.15
80
I
D
= 250A
3000
600
0
1
10 100
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
1800
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
C
ISS
C
OSS
C
RSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specied (Continued)
25
o
C
I
D
, DRAIN CURRENT (A)
g
f
s
,
T
R
A
N
S
C
O
N
D
U
C
T
A
N
C
E
(
S
)
0
0 10 20 30 40
4
8
12
16
20
50
175
o
C
V
DS
50V, 80s PULSE TEST
0 1.2 1.8 2.4 3.0 0.6
1
10
100
I
S
D
,
S
O
U
R
C
E
T
O
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1000
25
o
C
175
o
C
Q
g
, TOTAL GATE CHARGE (nC)
V
G
S
,
G
A
T
E
T
O
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
)
0
0 12 24 36 48
4
8
12
16
20
60
I
D
= 28A
V
DS
= 50V
V
DS
= 80V
V
DS
= 20V
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
5-7
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50% 50%
10%
PULSE WIDTH
V
GS
0
0
0.3F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
V
DS
0.2F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM