Properties of Materials

BiS 271 Spring, 2006
Biomechanics and
Materials
V. Material Properties
V.1 Properties of Materials
Prof. Young-Ho CHO
Department of BioSystems, KAIST
http://biosys.kaist.ac.kr
Phn: +82-42-869-8699 E-mail: mems@kaist.ac.kr http://mems.kaist.ac.kr
BiS271: Biomechanics & Materials Prof. Young-Ho Cho Spring 2006, KAIST BiS271: Biomechanics & Materials Prof. Young-Ho Cho Spring 2006, KAIST
V.1.1 Mechanical Properties [Note] Analysis of mechanical deformation
How strong is it?

(1) Young’s Modulus Under what sort of deformation?
(2) Mechanical Strength (yield, ultimate, fracture)

Tension Compression
(3) Poisson’s Ratio
(4) Residual Stress (thermal, intrinsic)
(5) Hardness Torsion

Shear
[Review] Tensile Test [Review] Stress-Strain Curve
σu
σy
• Specimen is “pulled” in tension at a

constant rate σf
σe
• Load (F) necessary to produce a
given elongation (ΔL) is monitored σ e : Elastic Limit
• Load vs elongation curve σ y : Yield Strength
• Converted to stress-strain curve σ u : Ultimate Strength
σ f : Fracture Toughness
(1) Young’s modulus [Note] Resonant Test Method for Young’s Modulus
The test structure is driven in the parallel direction to the silicon substrate by the
electrostatic force. From the measured natural frequency of the test structure, Young’s
modulus can be estimated.
σy
beam
Young’s modulus = modulus of elasticity Measure
σe the dimension of the test structure truss
and the natural frequency
Hooke’s Law: 2 π 2 f n2 mL 3
E =
σ ( stress ) = Eε ( strain) tw 3
σ
plate
Young ' s modulus, E = 1

where m = m p + mt +
12
mb
ε 4 35
[KAIST]
[Note] Blister Test for Young’s modulus and residual stress (2) Yield Strength
Pressurizing or blistering a diaphragm with pressure-deflection measurements
Measurement of residual tensile stress and Young’s modulus. Yield Strength: Strength when a definite amount of
TP7658 polymer
plastic strain has occurred (0.2%)
cylinder micrometer [Al Technology Inc.]
Norm alized Displacem ent vs. Pressure
4500000
4000000
specimen 3500000
Normalized Pressure
3000000
tube
2500000
Yield strength
2000000 E = 0.198 GPa
knob 1500000
σ = 1.45 MPa
Dial pressure
gauge 1000000
microscope -0.002 0.000 0.002 0.004 0.006 0.008
Normalized Displacement
0.010 0.012 0.014
[KAIST]
σtd ⎡ E ⎤ td
3
p = C1 2 + C2 ⎢ • Young Modulus : 0.198GPa
⎣1 − ν ⎥⎦ a
4
a • Residual Stress : 1.45MPa
(3) Ultimate and Fracture Strength [Note] Fracture Toughness
*Energy required to fail → area under stress-strain curve.

Ultimate Strength: Maximum stress
Engineering smaller toughness (ceramics)

tensile larg er toughness
Fracture Toughness: Stress at Fracture stress, σ (metals, PMCs)
smaller toughness-
unreinforced
polymers
Engineering tensile strain, ε
[Note] Pull Test for ultimate strength [Note] Blade Test for Fracture Toughness
Inserting Pre-inserted blade

blade
Silicon Pyrex glass
Pyrex #7740 glass h
δb Bonded area
Silicon wafer H
a
Crack propagation length
10mm
3h 2δ 2
G= 4 b 3 [KAIST]
c1a (1 + γη )
[Nagoya Univ.] [UCLA]

[Note] Ductility (4) Poisson’s Ratio, υ

A Isotropic material
Ductility: degree of plastic εx εy
F υ=− =− • Elastic strain in compression perpendicular
L deformation at fracture εz εz
to extension caused by tensile stress
⎛ A − AF ⎞ • Cannot be directly obtained from stress-
% Reduction in Area = ⎜⎜ 0 ⎟⎟ ×100
⎝ A0 ⎠ strain curve
⎛ L f − L0 ⎞ • υ = 0.26 to 0.35 for common metal alloys
⎛ L f − L0 ⎞ % Elongation = ⎜⎜ ⎟⎟ × 100
% EL = ⎜⎜ ⎟⎟ × 100
⎝ Lo ⎠ ⎝ L0 ⎠ • υ < 0.25 for ceramics
• υ has a maximum value of 0.50 (no volume
Brittle Materials have a
change)
fracture strain of less than
approx. 5%
[Example] A cylindrical rod is made of steel having poisson’s ratio,0.3,
(5) Hardness
is deformed under tensile loading. The initial length of the rod
is 4m, and its original diameter is 1m. When the elongation is 1) Hardness
0.1m, calculate the change in diameter of given rod.
- Material’s resistance to localized plastic deformation
- Test tools: Rockwell, Brinell, Knoop, Vickers
L=4m ε radial = −υε longit
Tensile load
2) Hardness vs. Tensile Strength
ε radial = −0.3 × 0.1 = −0.03
For metals,
d=1m Δd = d × ε radial = 1× (−0.03) = −0.03m su = 3.45 HB [MPa]
or 500 HB [psi]
3) Assumptions for material dimension and loading conditions:
(e.g.) material thickness > 10 X indentation depth
(6) Residual Stress 1) Thermal residual stress

Origin - thermal expansion coefficient mismatch
• Residual Stress : σ r = σ rt + σ ri αf
ε=0
αf
εrt
Intrinsic
αs αs
Thermal
stress stress T = Td T = Tr
ε rt = (α f − α s )(Td − Tr ) αf > αs → εrt > 0 : tensile

αf < αs → εrt < 0 : compressible
(ex) Poly silicon on (100) Silicon wafer

αf = 2.8x10-6 /K, αs = 3.2x10-6 /K, Td = 625°C & Tr = 25°C
→ εrt = -2.4x10-4
2) Intrinsic residual stress 3) Residual Stress Control
Origin – many !!
Doping (+, -) ~ ionic radius effect in substitutional site Compensate dopant strain
σri > 0 σri < 0 (ex) Boron doping in Poly-Silicon
Si B Si Si P Si
(tensile) (compressive)
Material composition
Atomic peening (-) Process conditions
densified compressive film in ion bombardment by atoms
(ex) Sputtering ~ gas pressure, substrate bias
Void (+)
Gas entrapment (-) PECVD ~ everything affects residual stress
Shrinkage during cure (+) LPCVD ~ temperature
Grain boundaries (complex, poorly understood)
Etc.
[Note] Disk or Curvature Method for residual Stress [Note] Beam Buckling Method for Residual Stress
Disk method is based on a measurement of the deflection in the center of the disk substrate The test structure, composed of a series of clamped-clamped beams, is used to
before and after processing. measure the compressive residual stress. When a clamped-clamped beam is buckled,
the compressive residual stress can be estimated.
Assumption
• Substrates ; thin, transversely isotropic, no bow Euler’s formula for elastic instability
• Film ; thin, uniform, constant stress : no internal moments
• System ; uniform temperature, mechanically from gradients in residual stress
free When the critical load clamped beam
2 for buckling is
1 E T
σ = 4π 2 I
R 6 (1 − ν ) t Pcr = E 2
Lc
Then, the residual stress is
Thin Film -
4π 2 1
substrate σ = E [KAIST]
+ [KAIST]
A L 2c
[Note] Gauge Needle Method for Residual Stress [Note] Bent-Beam Strain Gauge Method for Residual Stress
The test structure measures strain by interconnecting two opposed beams The narrow beams amplify and transform deformations
such that third beam to rotate as a gauge needle. caused by residual stress into opposing displacement of
The rotation of a gauge needle quantifies the residual strain. the apices, where vernier scales are positioned to quantify
the deformation.
FEM Analysis Type B ; uniform response

determines correction factor C f over the widest range of stress
yY tan θ A kL
σ = EC f y L / 2 = 2( )(tan ) where k = F / EI
( LA + LB )( LC + 0.5Y ) k 4
E⎛ FL ⎞ 1 L / 2 ∂y 2
σ= ⎜ ΔL′ + ⎟ where L′ = −
2 ∫0 ∂x
( ) dx
L⎝ 2 Ewt ⎠
V.1.2 Electrical Properties (0) Electrical Quantities
1) Charge(q) : Coulomb[C] ≡ 1A⋅s

- 1C = charge of 6.24×1018 electrons
(0) Electrical Quantities = charge transfer of 1 A⋅sec
- Charge of single electron = 1.602 × 10-19 C
(1) Resistance
2) Current(i) : Ampere[A] ≡ 1C/s
(2) Capacitance
3) Voltage(v) : volt[V] ≡ 1W/A
(3) Inductance - energy/charge or power/current
4) Electric field strength(E) : [V/m] ≡ N/C
[Note] Electrical Elements and Properties (1) Resistance
Resistance Inductance Capacitance
ρL π d2
I I I Resistance R= 1 For a wire of diameter, d : A =
A 4
V R V L V C ΔA Δd ΔL
=2 = −2ν 3
ρ (resistivity) A d L
L [Henry] F [Farad] ⎛ Δd ΔL ⎞
R [Ohm] ⎜Q = −ν ⎟
dI ⎝ d L ⎠
V =L dV
V = RI I =C L
dt dt A 3 → 2
V
I= 1
I = ∫ Vdt 1 ΔR ΔL Δρ
C∫
R V= Idt = (1 + 2ν ) +
L ΔR ΔL ΔA Δρ
= − + 2
R L ρ 4
ER = ∫0 VIdt
T
ER = ∫0 VIdt
T
R L A ρ
ER = ∫0 VIdt
T
1 1 Dimensional Piezoresistive
= RI 2T = LI 2 = CV 2 Effect Effect
2 2 (Strain gauge) (Semiconductor
Dissipation Storage (K.E.) Storage (P.E.) gauge)
(2) Capacitance
• Piezoresistive effect comes from the effect of strain
on the energy surface
d
• Gauge factor (strain sensitivity)
Area : A
G≡
(ΔR R ) = (1 + 2ν ) + (Δρ ρ ) where ν : Poisson's ratio
(ΔL L ) (ΔL L ) A A
C =ε = ε 0ε r
d d
[Note]
ε = ε0 εr : permittivity [ F/m]
• metal :G=2~5
ε0 = 8.85 pF/m
• p-Si : G = 100 ~ 170
εr = relative permittivity (dielectric constant)
• n-Si : G = -100 ~ -140
(3) Inductance V.1.3. Thermal Properties
Inductors store energy in a
magnetic field
(1) Heat Capacity & Specific Heat
(2) Thermal Conductivity
(3) Thermal Expansion
(4) Temperature Coefficient of Resistance
L = Inductance [V-s/A] (5) Thermoelectric Effects
(1) Heat Capacity and Specific Heat [Note] Heat Capacity: Comparison
• As the material absorbs heat, its temperature rises material c p (J/kg-K)

• Quantitative: The energy required to increase the ? Polymers at room T
Polypropylene 1925 c p : (J/kg-K)
temperature of the material (J/mol·K) Polyethylene 1850 C p : (J/mol-K)
Polystyrene 1170
Teflon 1050
energy input (J/mol)
heat capacity dQ ? Ceramics
(J/mol-K) C= Magnesia (MgO)
p
940
dT temperature change (K) Alumina (Al 2 O 3 ) 775
increasing c
Glass 840
• Specific Heat, c: Heat capacity per unit mass (J/kg·K) ? Metals
Aluminum 900
Heat Capacity (J/mol-K) Steel 486
Specific Heat C Tungsten 128
(J/Kg-K) c= Gold 138
m Mass (kg)
(2) Thermal Conductivity (2) Thermal Conductivity
• General: The ability of a material to transfer heat. • Proportionality constant (k) that relates heat flow
• Quantitative: temperature rate (dQ/dt) and temperature gradient (dT/dx)
dT gradient
q = −k 1 dQ dx
heat flux dx k=−
(J/m2-s) thermal conductivity (J/m-K-s) A dt dT
• Fourier’s Law is analogous to Fick’s Law
T1 T2 > T 1
x1 x2 dT 1 dQ
heat flux q = −k q=
dx A dt
• Atomic view: Atomic vibrations in hotter region carry
energy (vibrations) to cooler regions. • k in J/(s·m·K)
BiS271: Biomechanics & Materials Prof. Young-Ho Cho 7 KAIST

Spring 2006, BiS271: Biomechanics & Materials Prof. Young-Ho Cho Spring 2006, KAIST
1) Mechanism of Heat Transfer in Solids 2) Heat Transfer in Metals

• Heat transport by atomic vibrations as they move from
high T to low T regions • Free electrons are the main
contributor to heat transport
in high purity metals due to
• Heat transport by free electrons as they gain kinetic high velocities and lack of
energy and migrate to low T areas (in Metals) scattering
• k = k a + ke • Alloying metals (solid

T1 T2 > T 1
solution) introduces
x1 x2
heat flux scattering centers and the
heat transfer reduces
A
e
3) Heat Transfer in Ceramics 4) Thermal Conductivity: Comparison
Material k (W/m-K) Energy Transfer

? Metals
Aluminum 247 By vibration of
• They lack the free electrons of Steel 52 atoms and
metals Tungsten 178 motion of
Gold 315 electrons
? Ceramics
• Phonon transport dominates
increasing k
Magnesia (MgO) 38
and drops with rising Alumina (Al 2 O 3 ) 39 By vibration of
temperature Soda-lime glass 1.7 atoms
Silica (cryst. SiO 2 ) 1.4
? Polymers
Polypropylene 0.12 By vibration/
Polyethylene 0.46-0.50 rotation of chain
Polystyrene 0.13 molecules
Teflon 0.25
Selected values from Table 19.1, Callister 6e.
BiS271: Biomechanics & Materials Prof. Young-Ho Cho Spring 2006, KAIST BiS271: Biomechanics & Materials Prof. Young-Ho Cho 8 KAIST
Spring 2006,
(3) Thermal Expansion 1) Atomic analysis

• Materials change size when heating. 1 ΔL
α=
L final − L initial L ΔT
= α( Tfinal − Tinitial ) T init
L initial Linit
T final • Bond strength determines α…the greater the bond energy, the
linear coefficient of smaller α
thermal expansion (1/K) Lfinal
• Generally
• Atomic view: Mean bond length increases with T. αceramics < αmetals < αpolymers
Bond energy
r(T 1 )
r(T 5 )
Bond length (r)

increasing T
T5
bond energy vs bond length
curve is 밶symmetric
T1
2) Thermal expansion coefficient properties 3) Comparison
Material α (10 -6 /K)

? Polymers at room T
Polypropylene 145-180
• In general, thermal 106-198
Polyethylene
expansion coefficient Polystyrene 90-150
increases with temperature Teflon 126-216
? Metals
• Q: Why does α
α
• Can have negative α Aluminum 23.6
Steel 12 generally decrease
increasing
• Can have α near zero Tungsten 4.5 with increasing
Gold 14.2 bond energy?
? Ceramics
Magnesia (MgO) 13.5
Alumina (Al 2 O 3 ) 7.6
Soda-lime glass 9
Silica (cryst. SiO 2 ) 0.4
V.1.4. Optical Properties (2) Optical Energy

(1) Light and its spectrum - Photon has no mass but energy
where h : plank constant
• Radiation (Thermal, Optical) v = 6.63x10-34 J·s = 4.135x10-5 eV·s
E = hf = h [eV] f : wave frequency
• Radiation : Energy transfer by electromagnetic wave phenomena λ
v : wave velocity
λ : wave length
• Spectrum Thermal
radiation • Energy band diagram • Ep = eΦ (work
function)
e
Elevel
10-12 10-10 10-8 10-6 10-4 10-2 101 102 104 λ[m] Evacuum
eΦ Χ
Econduction
• E = Χ (electron affinity)
Cosmic Egap
X-ray UV Infrared(IR) Micro wave Radio (RF) Ef
ray (forbidden band)
Visible
ray
Evalance e
(0.39 μm ~ 0.78 μm)
e
BiS271: Biomechanics & Materials Prof. Young-Ho Cho Spring 2006, KAIST BiS271: Biomechanics & Materials Prof. Young-Ho Cho v=0 Spring 2006, KAIST
(3) Refraction V.1.5. Bio-chemical Properties
- index of refraction, n (1) Surface Energy
c where c : light velocity
n= v : wave velocity
Quantifies the disruption of chemical bonds when a
v surface is created
(4) Reflection
- reflectivity, R
Surface area
Ir where Ir : intensity of reflected ∝ Surface Energy
R= light Volume
Ii Ii : intensity of incident light
- Normal incident light
⎛ n2 − n1 ⎞
2
R=⎜ ⎟ where n1, n2 : indices of refraction

⎝ n2 + n1 ⎠
V.1.5. Bio-chemical Properties V.1.6. Material property interactions

(2) Contact Angle
(1) Electro-mechanical
Young’s Equation (2) Thermo-mechanical
Hydrophilic (3) Opto-mechanical
Mechanical
γ LG θ < 90o (4) Chemo-electrical

Liquid Gas
θ
(5) Opto-electrical Electrical Thermal
γ SL γ SG
(6) Thermo-electrical
Solid
Hydrophobic (7) Thermo-chemical
γ SL = γ SG − γ LG cos θ
θ > 90 o
(8) Chemo-mechanical Optical Chemical
γ SL : Solid - Liquid Surface Tension
γ SG : Solid - Gas Surface Tension (9) Opto-chemical
γ LG : Liquid - Gas Surface Tension (10) Thermo-optical
θ : Contact Angle
(1) Electro-mechanical: Piezo-electric Electrical Charge induced by the external force F
Asymmetric charge distribution in the material structure
Q = dF = dσA = dεEA
• Voltage potential → Polarization of internal charge → Relative
displacement of internal charges → Deformation (strain)
where, d is charge sensitivity coefficient (matrix) and E is
Piezoelectric material : Quartz, PZT (Lead Zirconate Young’s Modulus of the material.
Titanate), Zinc Oxide, ZnO, Lithium Niobate
Change in length per unit applied voltage
Δl C εε A 1 εε εε
= ⋅ Δl = o r ⋅ ⋅ Δl = o r ⋅ Δl = o r
ΔV ΔQ l dF ldσ dE
Δl ε oε r
= ≈ 1.23nm / V
ΔV dE
Δl is independent of l, only depends on the voltage ΔV and

material properties -> Stack for large Δl
(2) Thermo-mechanical (3) Opto-mechanical: Optical tweezer
Thermal Stress A strongly focused laser beam

has the ability to catch and
hold particles (of dielectric
material) in a size range from
• Occurs due to: T room nm to µm.
- uneven heating/cooling L room ΔL d=10um
- mismatch in thermal expansion. The basic principle behind
T optical tweezers is the
momentum transfer associated
with bending light
•For a constrained solid compressive σ keeps ΔL = 0 The forces are in the order of
0.01 to 300pN.
σ(ΔT) = Eα(T0 – Tf)
Possible to manipulate
- Upon heating (Tf>T0), Compressive Stress (σ<0) particles like atoms, molecules
- Upon heating (Tf<T0), Tensile Stress (σ>0) (even large) and small V. Emiliani et.al., Optics Express, Vol.12(2004)
dielectric spheres
(4) Chemo-electrical: Electro-wetting
In the Rayleigh Regime (diameter of
particle is very small compared to the ElectroWetting
wavelength, D « λ)
Scattering force due to the radiation

pressure on the particle
2
I o 128π 5r 6 ⎛⎜ n p − 1 ⎞⎟
2
Fscat = nm
c 3λ ⎜⎝ n p + 2 ⎟⎠
4 2
I o : Intensity
r : Radius of spherical particle Gradient force due to the Lorenz force
λ : Wave lenght of light acting on the dipole, induced by the No external voltage applied. External voltage applied.
n p : Refractive index of the particle electromagnetic field Charges are distributed at the Charge density at EDL changes
2
nb r 3 ⎛⎜ np −1 ⎞⎟
2
electrode-electrolyte interface, so that γSL and the contact
3
nm : Refractive index of the medium nb
Fgrad = − α∇E = −
2
∇E2
α : Polarizability of particle 2 2 ⎜⎝ np 2 + 2 ⎟⎠ building an EDL. angle decrease or increase.
Droplet Manipulation using

Young’s Equation
Electro-Wetting (UCLA)
γ SL = γ SG − γ LG cos θ
γ LG
γ SL : Solid - Liquid Surface Tension
Liquid Gas
γ SG : Solid - Gas Surface Tension
θ
γ SL γ SG
γ LG : Liquid - Gas Surface Tension
Solid θ : Contact Angle
Lippmann-Young Equation
1 1
cos θ = cos θ 0 + cV 2
γ LG 2
θ : Contact angle
c : Capacitance per unit area
V : Applied voltage
(5) Opto-electrical Effects (6) Thermo-electrical: TCR
1) Photoelectric (PE) 2) Photoconductive (PC) 3) Photovoltaic (PV) 1) Temperature Coefficient of Resistance (TCR)
Ep(λ) → I(V) Ep(λ) → R(I,V) Ep(λ) → V
Ep > eΦ Ep Ep > Eg Ep > Eg R(T ) = Ro(1 + αT + βT 2 + γT 3 +)
Ep
anode semiconductor n I Thermistor

Ep p or metal R Eo
I Ic
Eb
R Eo
e
k [W/cm-K] cp[J/g-K]
Ep e p Ep n Si 1.48 0.7
cathode Ec -
Al 2.37 0.9
Eb Ec
Eg
Ev
Ef Cu 4.01 0.39
+
Ev SiO2 0.014 1.0
• nowadays, seldom used • recombination nose • no recombination nose
• need bias (external source) • no external source required
→ Exposure meter → Solar cell
2) Seebeck effect 3) Peltier effect 4) Thomson effect [Note]

• Joule heating : Thermal heat conduction (one way)
• Generation of a •Electrical E → Thermal E
thermoelectric voltage due • Absorption or emission of • Seebeck effect, Peltier effect (two way)
to a temperature difference • Heat transfer due to heat due to carrier movement
between the junction of electrical current heat up or down a temperature [Note]
two dissimilar conducting generation/absorption rate gradient • Seebeck effect = Peltier effect + Thomson effect
materials • Reverse of Seebeck effect
A QTA VAB
A T1 I A T2 T1 I T2
VAB Qp
Qp1
T1 > T2 , V1 > V2
T1 Qp2
T1 B B [Note] T ↑ → carrier density ↑ B T2
T2
Heat Heat → carrier diffusion ↑
absorption generation QTB
[Applications]
ΔVAB = S AB ΔT
T2
qT = ∫ φ A IdT
*
Q p = Π AB I = ( S1* − S 2* ) IT T1
1) Voltage, current, power temperature measurement
S*AB : Seebeck coeff. in a wide frequency range (Hz ~ GHz)
qT : heat/sec/voltage
ΠAB : Peltier coeff. 2) Fluid flow, pressure, thermoconductivity measurement
(0.2~80 µV/°C) φA : Thomson coeff.
Q p : Amount of Heat 3) Power generation (~mW)
(7) Thermo-chemical (8) Chemo-mechanical
Surface tension driven fluid motion under Polymer actuator
Voltage-displacement
temperature gradient
Working principle
Temperature gradient
Surface energy gradient Polymer actuator shifting a coin
(9) Others References

Opto-chemical interactions
Thermo-optical interactions
[1] J.J. Wortman and R.A. Evans, “Young’s modulus, Shear modulus, and Poisson’s Ratio in
Silicon and Germanium”, J. of Applied Phys., Vol.36, No.1, Jan. 1965, pp.153-156
[2] H. Guckel et al., “Mechanical Properties of Fine Grained Polysilicon : The Repeatability
issue”.
[3] M. Madou, Fundamentals of Microfabrication, CRC Press, 1997, pp.223-224.
[4] Y. B. Gianchandani, “Bent-Beam Strain Sensors,” J. of MEMS, Vol. 5, No. 1(1996), pp.52-58.
[5] K. Najafi, K. Suzuki, “A Novel Technique and Structure for the Measurement of Intrinsic
Stress and Young’s Modulus of Thin Films,” Proc. IEEE MEMS Workshop, Salt Lake City,
1989, pp.96-97.

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BiS 271 Spring, 2006

Phn: +82-42-869-8699 E-mail: mems@kaist.ac.kr http://mems.kaist.ac.kr

V.1.1 Mechanical Properties [Note] Analysis of mechanical deformation

How strong is it?

(2) Mechanical Strength (yield, ultimate, fracture)

(4) Residual Stress (thermal, intrinsic)

(5) Hardness Torsion

• Specimen is “pulled” in tension at a

Young ' s modulus, E = 1

microscope -0.002 0.000 0.002 0.004 0.006 0.008

(3) Ultimate and Fracture Strength [Note] Fracture Toughness

*Energy required to fail → area under stress-strain curve.

Engineering smaller toughness (ceramics)

Engineering tensile strain, ε

Inserting Pre-inserted blade

[Nagoya Univ.] [UCLA]

[Note] Ductility (4) Poisson’s Ratio, υ

(6) Residual Stress 1) Thermal residual stress

ε rt = (α f − α s )(Td − Tr ) αf > αs → εrt > 0 : tensile

(ex) Poly silicon on (100) Silicon wafer

FEM Analysis Type B ; uniform response

V.1.2 Electrical Properties (0) Electrical Quantities

1) Charge(q) : Coulomb[C] ≡ 1A⋅s

4) Electric field strength(E) : [V/m] ≡ N/C

(2) Thermal Conductivity

(3) Thermal Expansion

(4) Temperature Coefficient of Resistance

L = Inductance [V-s/A] (5) Thermoelectric Effects

• As the material absorbs heat, its temperature rises material c p (J/kg-K)

BiS271: Biomechanics & Materials Prof. Young-Ho Cho 7 KAIST

1) Mechanism of Heat Transfer in Solids 2) Heat Transfer in Metals

• k = k a + ke • Alloying metals (solid

Material k (W/m-K) Energy Transfer

(3) Thermal Expansion 1) Atomic analysis

Bond length (r)

Material α (10 -6 /K)

V.1.4. Optical Properties (2) Optical Energy

R=⎜ ⎟ where n1, n2 : indices of refraction

V.1.5. Bio-chemical Properties V.1.6. Material property interactions

γ LG θ < 90o (4) Chemo-electrical

 Δl is independent of l, only depends on the voltage ΔV and

(2) Thermo-mechanical (3) Opto-mechanical: Optical tweezer

Thermal Stress  A strongly focused laser beam

 Scattering force due to the radiation

Droplet Manipulation using

anode semiconductor n I Thermistor

2) Seebeck effect 3) Peltier effect 4) Thomson effect [Note]

Surface energy gradient Polymer actuator shifting a coin

(9) Others References

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Δl is independent of l, only depends on the voltage ΔV and

Thermal Stress A strongly focused laser beam

Scattering force due to the radiation