Name:________________________ Student #:_______________________ Section:______

Question Max
Marks
Score
1 10
2 20
3 25
4 25
5 20
Total 100
CARLETON UNIVERSITY

FINAL
EXAMINATION
April 12, 2002
Duration: 3 hours
Department name and course number: Electronics 97.257
Course Instructor(s): R. Achar, N. Tait Number of students: 380
AUTHORIZED MEMORANDA:
NON-PROGRAMMABLE CALCULATOR
Students MUST count the number of pages in this examination paper before beginning to write, and
report any discrepancies immediately to a proctor. This question paper has 12 pages.
This examination question paper MAY NOT be taken from the examination room.
This exam consists of 5 questions, which should be answered on this exam paper in the space provided.
Attempt all questions. Marks allocated to each question are indicated (total marks = 100).
Note: The solution must be clearly indicated. Multiple solutions or solutions that are not clearly
identified, will be marked incorrect. Using approximate relations (unless they are given below or
specified in a question) is not accepted. Clearly state all assumptions made. Clearly mark the units for
final answers. SHOW YOUR WORK!

Diode:
Forward current:
( )
T D
nV V
S D
e I I
/

Operational Amplifier:
) (
+
= V V A V
o
; ;
=
i
R 0 =
o
R

Small signal resistance:
D
T
d
I
nV
r =

MOSFET:
( )

=
2
2
DS
DS T GS DS
V
V V V
L
W
k I
( )
2
2
T GS
DS
V V
L
W
k I

=
ox
C k =

mV
q
kT
V
T
25 = =
at room temperature
Bipolar Transistor:
Active mode operation: V
BE
= 0.7V
Saturation mode operation: V
CEsat
= 0.2V
B C
i i =

E C
i i =
C B E
i i i + =
T GS sat DS
V V V =
,

m mb
g g =

( )
DS T GS m
I
L
W
k V V
L
W
k g = = 2

( )
1
,

=
T GS triode DS
V V
L
W
k r ;
D
A
o
I
V
r =
T
C
m
V
I
g =

m
g
r

=

C
A
o
I
V
r =

1 +
= =

r
g
r
m
e

1 +
=

Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 2/2


Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 2/2


1) -A) Answer the following questions by filling in the corresponding circles with your selection a or b or
c or d (5 marks).
(i) An important advantage of bipolar transistors over MOS transistors is that,
a) they have higher transconductance
b) they have higher input impedance
c) they have higher electron mobility
d) they emit light when biased.

(ii) For a PMOS enhancement transistor to be in triode mode
a) V
GS
> V
T
; V
DS
< V
GS
-V
T

b) V
GS
> V
T
; V
DS
> V
GS
-V
T

c) V
GS
< V
T
; V
DS
< V
GS
-V
T

d) V
GS
< V
T
; V
DS
> V
GS
-V
T


(iii) The buffer (impedance matching) stages in electronic circuits can be designed with
a) Common Emitter Configurations using BJTs
b) Common Base Configurations using BJTs
c) Common Collector Configurations using BJTs
d) Common Gate Configurations using FETs

(iv) In general, the open circuit voltage gain of a common base amplifier configuration
a) is independent of bias current
b) is independent of load resistance
c) is larger than unity
d) is smaller than unity

(v) A common use for a current mirror circuit is
a) to turn on diodes in AC rectifiers
b) to act as gates in logic circuits
c) to decrease the input resistance of small signal amplifier circuits
d) to bias transistors in integrated circuits

1) -B) Answer the following questions by entering TRUE or FALSE in the space provided (5 marks).
i) A p-channel MOSFET uses a n-type substrate or well. ______
ii) Conduction in a MOSFET channel is due primarily to majority carriers. ______
iii) Early effect is generally used estimate the input impedance of transistors. ______
iv) In saturation, the collector current in a bipolar transistor is mainly controlled by V
CE
. ______
v) A reverse biased diode acts like a voltage dependent capacitor. ______
Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 3/3
2) Diodes: For the circuit shown below, the following data is given:
Both diodes D
1
and D
2
have n =1.75 and their reverse saturation currents are such that I
s1
= 10I
s2.
The forward drop across diode D
1
is given to be V
D1
=0.7V.

The diode D
3
is represented by linear piecewise model [Battery = 0.7V, Resistance = 60 Ohms].

D
1

V
a

V
S
=10 V
R
2
= 1 K
D
2

R
3
= 1 0 0
I
1

V
b

V
D1
V
D2
D
3



Using the above data, compute the following (12 marks):

i) Find V
D2
: V
D2
= ________













ii) Find V
a
: V
a
= ________






ii) Find V
b
: V
b
= ________





Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 4/4
1) b) Diodes (continued):
In the following circuit, assume that the diodes D
1
and D
2
are ideal and the zener diode D
3
has a
reverse breakdown voltage of 3Volts. If the input is V
i
= 6sin(wt), what are the Peak-to-peak values
for the output voltage? Sketch the output waveform on the graph shown on left side. (4 Marks).

v i =6 s i n w t
v
o

2 V 1 V
v
i
v (Vo lt s)
t







c) Assuming that the forward drop across the diodes is 0.5Volts, what is the value of the current I and
output voltage V
o
in the following circuit? (4 Marks)


5 v
5 0 0 O hms
I
V o
3 V
2V
1 V

I = ________
V
o
= ________

Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 5/5
3.) Bipolar Junction Transistor

v
o

C
1
~
C
3
~
Q
1
R
E
=1K
R
L
=1K
v
s

R
S
=1K
Vcc = 21V
R
C
=2K
R
1
=30K
R
2
=51K
C
2
~
Vc
V
E
I
B

=40


a) For the circuit shown above: i ) Draw the D. C. Equivalent Circuit (2 Marks)








ii) Compute I
B
, V
C
and V
CE
(8 Marks)





I
B
=________

V
C
=________

V
CE
=________





Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 6/6
3) b) Bipolar Junction Transistor (continued.)
v
o

C
3
~
Q
1

R
E
= 100
R
L
=4K
v
s

R
S
= 80
V
CC
=10V
R
C
= 4K
R
i

R
o

V
CC
=10V
R1=200K
C
2
~
C
1
~
R2=200K
v
i



For the BJT, assume that r
e
= 25 Ohms and =50. Using these data, answer the following:

i) Draw the equivalent circuit for small signal AC analysis (preferably, use T-Model for BJT) (3 marks)










ii) Find the output resistance R
o
, input resistance R
i
for the circuit (3 marks):


R
o
=________

R
i
=________

Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 7/7

iii) Find the voltage gain A
v1
=v
i
/v
s
, voltage gain A
v2
=v
o
/v
i
and the overall voltage gain A
v
=v
o
/v
s.

Show the derivation of necessary expressions in your computations (9 marks):



























A
v1
=________

A
v2
=________

A
v
=________




Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 8/8
4) MOSFET.

Q1
+5V
R
3
=6k
+5V
R
1
=100k
R
2
=1.6k
I
D

a) In the figure above, the transistor has V
t
=1V, V
A
=30V, k
n
=100A/V
2
, L=1m and W =10m.


i) Find the bias current I
D
(5 marks):













I
D
=________


ii)) Verify the mode of operation of the transistor and state what mode the transistor is in (3 marks):








Mode=________

Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 9/9
4) b) MOSFET (continued.)

V
DD
=10V
Q
2
(small AC signal)
v
s

V
Bias
Q
1
Vo
V
DD
=10V
Q
3
I
REF

R
I
2


For the figure on the left,
the transistors have

V
t
=1V, V
A
=30V,
k
n
=100A/V
2
,
L
1
=1m, W
1
=10m,
L
2
=1m,
L
3
=1m, W
3
=10m.

Using these data
compute the following:
i) If I
REF
=1mA, find R (5 marks):













R = ________
ii) If I
2
=0.5mA, find W
2
(3 marks):







W
2
= ________

iii) What is the minimum value of V
o
for which I
2
=0.5mA (3 marks):



Minimum V
o
= ________



Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 10/10
iv) Draw the small signal equivalent circuit (2 marks):












v) If I
2
=0.5mA, =0.1 and Q
1
is in saturation, find A
v
=v
o
/v
s
(4 marks):
































A
v
= ________

Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 11/11
5) Operational Amplifier
V
o
R
4
= 9K
R
2
= 6K R
1
= 2K
V
c

V
b

V
a

R
3
= 3K
A~


a) For the circuit shown, find the expression for V
o
as a function of V
a
, V
b
and V
c
(assume the op amp is
ideal) (10 Marks)





























V
o
=________

Name:______________________________ Student #:________________ Section:___________
97.257 Final Examination, April 12 2002 Page: 12/12
5) b) Operational Amplifier (continued.)
V
o
R
3
R
2
R
1

v
i

A~
C
1

i) For the above circuit, assuming ideal op-amp, derive the gain H(jw) = Vo(jw)/ Vi(jw). Show the
steps. (6 Marks)



















ii) If R
1
= 5K, R
2
= 15K, R
3
= 10K, C
1
= 1uF and frequency is 1MHz, compute the gain-
magnitude in DBs and gain-phase in degrees. (3 Marks)




| H(jw) | =_________ DBs

| H(jw) = ________ Degrees


iii) What class of filter does the above circuit belong to? (1 Mark) _________________

End