similar UWB characteristics can always be obtained by using

appropriate values of w
a
and w
b
. The VSWR curves shown in
Figure 4 are for the case of d 0.4 mm. When the tuning stub is
widened towards only one side (i.e., w
a
7 mm and w
b
0), the
VSWR 2 impedance band extends over a band of about 38
GHz. With the other side of the tuning stub subsequently widened
up to w
b
1 mm, the band of 816 GHz can also be brought to
have an impedance match with VSWR 2.
3.2. Radiation Patterns
Figure 5 shows at 4, 7, 10, and 12 GHz the xz- and yz-plane
far-eld radiation patterns of the optimized antenna design for the
proposed PSSA, where G 25, L 22, t 11, d 0.7, w
a
0.7,
and w
b
1.5 (all units are in mm). The measured radiation
patterns agree reasonably well with the simulated ones. At the
lower frequency (i.e., 4 GHz), the antenna has a nearly omni-
directional radiation pattern, as is expected. However, at the fre-
quency equal to or greater than 7 GHz, the asymmetry in the
protruded tuning stub has caused unequal copolarized radiations in
the x and x directions. This asymmetry in the xz-plane radia-
tion pattern might be the reason that the cross-polarization levels in
the xz-plane are larger than the co-polarization ones in some spatial
directions. The maximum antenna gains in the band of 312 GHz
were measured to be between 2 and 5 dBi, and were simulated to
range from 1.9 to 4.7 dBi, as shown in Figure 6.
4. CONCLUSION
This article has presented a new CPW-fed UWB PSSA, in which
the protruded tuning stub is asymmetrically widened to its two
sides. The antenna geometry is simple; the design procedure is
simple; yet a wide VSWR 2 impedance band of about 2.816
GHz has been obtained for the fabricated antenna, whose occupied
circuit area is as small as 25 25 mm
2
. The antenna gains in the
standard UWB were measured to be about 25 dBi.
ACKNOWLEDGMENT
This work was supported by the National Science Council of
Taiwan, the Republic China, under Grant NSC 952221-E-606
036.
REFERENCES
1. H.D. Chen, J.S. Chen, and J.N. Li, Ultra-wideband square-slot antenna,
Microwave Opt Technol Lett 48 (2006), 500502.
2. E.S. Angelopoulos, A.Z. Anastopoulos, D.I. Kaklamani, A.A. Alexan-
dridis, F. Lazarakis, and K. Dangakis, Circular and elliptical CPW-fed
slot and microstrip-fed antennas for Ultrawideband applications, IEEE
Antennas Wireless Propagat Lett 5 (2006), 294297.
3. R. Chair, A.A. Kishk, and K.F. Lee, Ultrawide-band coplanar
waveguide-fed rectangular slot antenna, IEEE Antennas Wireless
Propagat Lett 3 (2004), 227229.
4. G. Sorbello, F. Consoli, and S. Barbarino, Numerial and experimental
analysis of a rectangular slot antenna for UWB communications, Mi-
crowave Opt Technol Lett 46 (2005), 315319.
5. J.Y. Sze and K.L. Wong, Bandwidth enhancement of a microstrip-line-
fed printed wide-slot antenna, IEEE Trans Antennas Propagat 49
(2001), 10201024.
6. J.Y. Chiou, J.Y. Sze, and K.L. Wong, A broad-band CPW-fed strip-
loaded square slot antenna, IEEE Trans Antennas Propagat 51 (2003),
719721.
7. H.D. Chen, Broadband CPW-fed square slot antennas with a widened
tuning stub, IEEE Trans Antennas Propagat 51 (2003), 19821986.
2008 Wiley Periodicals, Inc.
ANALYSIS OF COMPACT H-SHAPED
MICROSTRIP ANTENNA
J. A. Ansari,
1
Satya Kesh Dubey,
1
Prabhakar Singh,
1
R. U. Khan,
2
and Babau R. Vishvakarma
2
1
Department of Electronics and Communication University of
Allahabad, Allahabad, India
2
Department of Electronics Engineering I. T. BHU, Varanasi 221005,
India; Corresponding author: brvish@bhu.ac.in
Received 23 November 2007
ABSTRACT: Analysis of H-shaped patch is carried out using equivalent
circuit model. It is found that the antenna exhibits dual resonance behavior
which is very sensitive to the dimensions of the notch. The theoretical re-
sults of proposed method are compared with experimental and theoretical
result reported earlier using FDTD method. Comparison with other re-
ported results justify the veracity of the proposed method. 2008 Wiley
Periodicals, Inc. Microwave Opt Technol Lett 50: 17791784, 2008;
Published online in Wiley InterScience (www.interscience.wiley.com).
DOI 10.1002/mop.23543
Key words: H-shaped patch; notch patch and dual band microstrip an-
tenna
1. INTRODUCTION
With the advent of communication engineering the necessity of
size reduction and wide bandwidth with the patch radiator are
essential to meet the requirement for practical applications. Con-
sequently the design of compact microstrip antennas with broad-
band/dualband characteristics [13] is signicant especially in
satellite links, wireless local networks, cellular telephones, syn-
thetic aperture radars, and radio frequency identication systems.
A number of approaches have been reported to obtain compact
dual band microstrip antenna such as loading of rectangular [4],
circular [5], and triangular patches by shorting pins [6], loading by
crossed slot [7] and the use of a rectangular ring [8]. These dual
band operations can be at xed frequencies or tunable at both or
one of the frequency.
In the present article an H-shaped microstrip patch antenna [9]
has been analyzed using equivalent circuit model. An H-shaped
Figure 6 Simulated and measured maximum antenna gains of the de-
signed PSSA from 3 to 12 GHz
DOI 10.1002/mop MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 50, No. 7, July 2008 1779
microstrip antenna (MSA) is obtained by symmetrically cutting
notches (d w) along nonradiating edges of the rectangular
microstrip antenna as shown in Figure 1. The different antenna
parameters such as input impedance, return loss, and resonance
frequency have been studied as a function of frequency for differ-
ent value of notch width and depth, the details of which are given
in the following sections.
2. THEORETICAL CONSIDERATIONS
Rectangular microstrip antenna (L W) is considered as a parallel
combination of resistance (R
1
), inductance (L
1
), and capacitance
(C
1
) [Fig. 2(a)], the values of R
1
, L
1
, and C
1
can be given as [10]
C
1

e
LW
2h
cos
2

y
0
L

(1)
L
1

2
C
1
(2)
R
1

Q
r
C
1
(3)
in which L length of the rectangular patch, W width of the
rectangular patch, y
0
feed point location along length of the
patch, h thickness of the substrate material.
Q
r

c
e
4fh
where c velocity of light, f the design frequency,
e
is
effective permittivity of the medium which is given by [10].

r
1
2

r
1
2

1
10h
W

1/ 2
where
r
relative permittivity of the substrate material.
Because of the notches cut there is change in the surface current
of microstrip patch that changes the resonance behavior of the
patch. This is due to the fact that when the notch is cut along the
nonradiating edges of the rectangular patch the electric and mag-
netic eld distribution changes due to the lengthening of surface
current around both the notches. Because of the notch an additional
d
w
Center strip length
Central strip width
Side strip length (w
1
)
Figure 1 H-shaped microstrip antenna


L
1
C
1
R
1
C
C
L
C
1
L
1
L
R
1


L
2
C
2
R
2
(a)
(b)
(c)
Figure 2 (a) Equivalent circuit of the RMSA, (b) equivalent circuit of
H-shaped RMSA, (c) modied equivalent circuit of H-shaped RMSA

T

C
m
L
m

Z
p
Z
H
C
m
L
m
Figure 3 Coupled resonant circuit
1780 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 50, No. 7, July 2008 DOI 10.1002/mop
series inductance (L) and series capacitance (C) appear that
modify the equivalent circuit of the H-shaped patch to Figure 2(c).
The input impedance of the patch can be calculated from Figure
2(a) as
Z
P

1
1
R
1

1
jL
1
jC
1
(4)
The second resonant circuit is shown in Figure 2(b) in which series
inductance (L) and series capacitance (C) can be calculated as
[11, 12]
L
Z
1
16 f cos
2

y
0
L

tan

fd
c

(5)
where Z
1
is the characteristic impedance of the microstrip line with
width w
1
and is given as
Z
1

120
w
1
h
1.393 0.667 log

w
1
h
1.44

and
C

d
w

C
s
(6)
in which C
s
gap capacitance between two side strips [13]
The input impedance of the circuit shown in the Figure 2(c) can
be given as
Z
H

1
1
R
1

1
jL
2
jC
2
(7)
where
1.5 1.6 1.7 1.8 1.9 2
x 10
9
-30
-20
-10
0
10
20
30
40
50
Frequency (Hz)
I
n
p
u
t

I
m
p
e
d
a
n
c
e

(
o
h
m
)
R,d=5mm
X,d=5mm
R,d=7mm
X,d=7mm
R,d=9mm
X,d=9mm
R,d=12mm
X,d=12mm
R
X
(i)
0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25
x 10
10
-30
-20
-10
0
10
20
30
40
50
Frequency (Hz)
I
n
p
u
t

I
m
p
e
d
a
n
c
e

(
o
h
m
)
R,d=5 mm
X,d=5 mm
R,d=7 mm
X,d=7 mm
R,d=9 mm
X,d=9 mm
R,d=12 mm
X,d=12 mm
R
X
(ii)
1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2
x 10
9
-30
-20
-10
0
10
20
30
40
50
Frequency (Hz)
I
n
p
u
t

I
m
p
e
d
a
n
c
e

(
o
h
m
)
R,w=5 mm
X,w=5 mm
R,w=7 mm
X,w=7 mm
R,w=9 mm
X,w=9 mm
R,w=12 mm
X,w=12 mm
R
X
(i)
0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25
x 10
10
-30
-20
-10
0
10
20
30
40
50
Frequency (Hz)
I
n
p
u
t

I
m
p
e
d
a
n
c
e

(
o
h
m
)
R,w=5 mm
X,w=5 mm
R,w=7 mm
X,w=7 mm
R,w=9 mm
X,w=9 mm
R,w=12 mm
X,w=12 mm
R
X
(ii)

(a) (b)
Figure 4 Variation of input impedance with frequency for different notch (a) depth and (b) width for a given notch width (5 mm): (i) Lower resonance,
(ii) Upper resonance. [Color gure can be viewed in the online issue, which is available at www.interscience.wiley.com]
DOI 10.1002/mop MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 50, No. 7, July 2008 1781
L
2
L
1
2L
C
2

C
1
C
2C
1
C
It may be noted that the two resonant circuits are coupled through
mutual inductance (L
m
) and mutual capacitance (C
m
) expressed as
L
m

C
p
2
L
1
L
2
C
p
2
L
1
L
2

2
4C
p
2
1 C
P
2
L
1
L
2
21 C
p
2

(8)
C
m

C
1
C
2
C
1
C
2

2
4C
1
C
2
1 C
p
2

2
(9)
where C
p

1
Q
1
Q
2
and Q
1
and Q
2
are quality factors of the two
resonant circuits.
Now the equivalent circuit of the H-shaped patch can be given
as shown in Figure 3. The input impedance of the H-shaped
microstrip patch can be calculated from Figure 3 as
Z
T
Z
H

Z
P
Z
m
Z
P
Z
m
(10)
where
Z
m

1
2

jL
m

1
jC
m

2.1. Calculation of Various Antenna Parameters

The reection coefcient of the patch can be calculated as

Z
0
Z
T
Z
0
Z
T
(11)
where Z
0
characteristic impedance of the coaxial feed (50 )
VSWR and return loss can be calculated as
VSWR
1
1 (12)
1.5 1.6 1.7 1.8 1.9 2
x 10
9
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
Frequency (Hz)
R
e
t
u
r
n

l
o
s
s
(
d
B
)
d=5 mm
d=7 mm
d=9 mm
d=12 mm
(i)
0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25
x 10
10
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
Frequency (Hz)
R
e
t
u
r
n

l
o
s
s
(
d
B
)
d=5 mm
d=7 mm
d=9 mm
d=12mm
(ii)
1.5 1.6 1.7 1.8 1.9 2
x 10
9
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
Frequency (Hz)
R
e
t
u
r
n

l
o
s
s

(
d
B
)
w=5 mm
w=7 mm
w=9 mm
w=12 mm
(i)
0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25
x 10
10
-35
-30
-25
-20
-15
-10
-5
0
Frequency (Hz)
R
e
t
u
r
n

l
o
s
s

(
d
B
)
w=5 mm
w=7 mm
w=9 mm
w=12 mm
(ii)
(a) (b)
Figure 5 Variation of return loss with frequency for different notch (a) depth and (b) width for a given notch width (5 mm): (i) Lower resonance, (ii) Upper
resonance. [Color gure can be viewed in the online issue, which is available at www.interscience.wiley.com]
1782 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 50, No. 7, July 2008 DOI 10.1002/mop
Return loss 20 log (13)
3. DESIGN SPECIFICATIONS
Design specications of the H-shaped patch is given as
Dielectric constant of the substrate material (
r
) 2.5
Thickness of the substrate (h) 1.59 mm
Width of the patch (W) 3.30 cm
Length of the patch (L) 5.45 cm
Design frequency (f) 1.952 GHz
4. DISCUSSION OF RESULTS
Variation of input impedance with frequency for H-shaped patch is
shown in Figure 4(a) for the different notch depth (d) and for a
given notch width (w 5 mm). It is observed that the antenna
shows dualband and separation between two band is maximum for
lowest value of notch depth (d 5 mm). The separation between
two resonances decreases with increasing notch depth. It may be
noted that the rst resonance occurs at lower frequency which
decreases minutely with increasing notch depth (d) while upper
resonance occurs on the higher frequency which shows consider-
able shift in frequency with increasing notch depth (d), for a given
notch width (w 5 mm). Ratio of upper and lower resonance
frequency is variable between 4.63 and 6.16. It is further observed
that the real part of input impedance is around 50 while it is
having lower value at higher resonance and it decreases with
decreasing notch depth. This indicates that there is a good match-
ing at lower resonance frequency where as matching decreases at
higher resonance frequency with decreasing notch depth for given
notch width (w 5 mm). Similar behavior is also observed from
Figure 4(b) in which impedance is plotted as a function of notch
width (w) for a given notch depth (d 5 mm). Behavior of the
patch is further corroborated from the return loss data shown in
Figures 5(a) and 5(b), respectively.
Variation of real and imaginary parts of input impedance is
shown in Figure 6 along with results reported by Palanisamy and
Garg [9] and Gao et Al. [14] for lower resonance only. It is
observed that the results of proposed method are in close agree-
ment with the experimental results by Palanisamy and Garg and
that by Gao et al. using FDTD method.
Variation of lower resonance frequency as a function of central
strip width is shown in Figure 7(a) along with reported results [14].
It is found that the resonance frequency increases almost linearly
with central strip width and the result of proposed method is
almost in good agreement with that of Gao et al. [14] using FDTD
method.
1.24 1.25 1.26 1.27 1.28 1.29 1.3
x 10
9
-40
-20
0
20
40
60
80
100
Frequency (Hz)
I
n
p
u
t

I
m
p
e
d
a
n
c
e

(
o
h
m
)
R, proposed
X, proposed
R, Experimental [9]
X, Experimental [9]
R, FDTD [14]
X, FDTD [14]
R
X
Figure 6 Variation of input impedance with frequency (lower resonance,
d 9.15 mm, w 26 mm). [Color gure can be viewed in the online issue,
which is available at www.interscience.wiley.com]
0 5 10 15 20 25 30 35
1
1.5
2
2.5
3
Central strip width (mm)
R
e
s
o
n
a
n
c
e

f
r
e
q
u
e
n
c
y

(
G
H
z
)
proposed
FDTD [14]
5 10 15 20 25 30
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
w (mm)
R
e
s
o
n
a
n
c
e

f
r
e
q
u
e
n
c
y

(
G
H
z
)

proposed
FDTD [14]
0 5 10 15 20 25
1
1.5
2
2.5
3
Side strip length (mm)
R
e
s
o
n
a
n
c
e

f
r
e
q
u
e
n
c
y

(
G
H
z
)

praposed
FDTD [14]
(a)
(b)
(c)
Figure 7 Variation of lower resonance frequency with (a) centre strip
width, (b) centre strip length (w), (c) side strip length (w
1
). [Color gure
can be viewed in the online issue, which is available at www.
interscience.wiley.com]
DOI 10.1002/mop MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 50, No. 7, July 2008 1783
Variation of lower resonance frequency with center strip length
is shown in Figure 7(b). It is found that resonance frequency
decreases with increasing width of notch (i.e. center strip length).
Results of proposed method are similar to that of FDTD method.
Little variation in the two results is due to approximation involved
in the cavity theory that is used for equivalent circuit model.
The variation of lower resonance frequency as a function of
side strip length is shown in Figure 7(c) along with the reported
results. It is observed that the resonance frequency decreases with
side strip length and the results from proposed method are in good
agreement with the FDTD method.
It may be mentioned that all the data obtained from proposed
method are almost in good agreement with reported results. This
validates the veracity of proposed method of analysis.
5. CONCLUSION
It may therefore be inferred from this analysis that H-shaped patch
exhibits dual resonance behavior and the resonance frequency are
very sensitive to the dimensions of the notch. Such antenna can be
successfully used at two different frequencies as per requirement.
REFERENCES
1. K.L. Wong and K.P. Yang, Compact dual frequency microstrip an-
tenna with a pair of bend slot, Electron Lett 34 (1988), 225226.
2. H. Iwasaki, A circularly polarized small size microstrip antenna with
a cross slot, IEEE Trans Antenna Propagat 44 (1996), 13991401.
3. S. Maci and G.B. Gentillin, Dual frequency patch antenna, IEEE AP
Mag 39 (1996), 1317.
4. K.L. Wong and W.S. Chen, Compact microstrip antenna with dual
frequency operation, Electron Lett 33 (1977), 646647.
5. C.L. Tang, H.T. Chen, and K.N. Wang, Small circular microstrip
antenna with dual frequency operation, Electron Lett 33 (1997), 1112
1113.
6. S.C. Pan and K.L. Wong, Design a dual frequency microstrip antenna
using a shorting pin loading, IEEE AP-5, Symp Dig (1998), 312315.
7. K.P. Yang and K.L. Wong, Inclined slot coupled compact dual fre-
quency microstrip antenna with cross slot, Electron Lett 34 (1998),
321322.
8. W.S. Chen, Single feed dual frequency rectangular microstrip antenna
with square slot, Electron Lett 34 (1998), 231232.
9. V. Palanisamy and R. Garg, Rectangular ring and H-shaped microstrip
antennasAlternative to rectangular patch antennas, Electron Lett 21
(1985), 874876.
10. I.J. Bahal and P. Bhartia, Microstrip antennas, Artech House, Massa-
chuaetts, 1980.
11. X.X. Zhang and F. Yang, Study of slit cut microstrip antenna and its
application, Microwave Opt Technol Lett 18 (1998), 297300.
12. I.J. Bahal, Lumped elements for RF and microwave circuits, Artech
House, Boston, 2003.
13. V.K. Pandey and B.R. Vishwakarma, Theoretical analysis of linear
array antenna of stacked patches Indian J Radio Space Phys 34 (2005),
125127.
14. S.C. Gao, et al. Analysis of an H-shaped patch antenna by using the
FDTD method, Prog Electromagn Res PIER 34 (2001), 165187.
2008 Wiley Periodicals, Inc.
WIDEBAND CIRCULARLY POLARIZED
MICROSTRIP ANTENNA ARRAY USING
A NEW SINGLE FEED NETWORK
Nasimuddin,
1
Zhi Ning Chen,
1
and K. P. Esselle
2
1
Institute for Infocomm Research, 20 Science Park Road, Singapore;
Corresponding author: nasimuddin@i2r.a-star.edu.sg
2
ICS Division, Macquarie University, Sydney, Australia
Received 5 November 2007
ABSTRACT: A new single feed system is presented for broadband and
high gain circularly polarized stacked microstrip (CPSM) array applica-
tions. It consists of a combination of a microstrip line and a via. The
gap between elements and location of the feed are optimized to achieve
a good circular polarization (CP) performance with high gain. A 2 2
sequentially rotated array was fabricated and tested. The measured 3
dB axial-ratio (AR) bandwidth is 27% (3.54.6 GHz) and at boresight
gain is 9.0 dBic over the 3 dB AR bandwidth. The measured 10 dB re-
turn loss impedance bandwidth is around 51% (3.285.54 GHz). The
proposed new feeding network system is very useful to design the high
gain and wideband CP array in a space-limited environment. 2008
Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 17841789,
2008; Published online in Wiley InterScience (www.interscience.wiley.
com). DOI 10.1002/mop.23481
Key words: stacked microstrip antennas; circular polarization; axial-
ratio; wideband; single feed; array
1. INTRODUCTION
The research on achieving high scale integration of array an-
tennas for microwave subsystem in applications such as wire-
less communications and radar is challenging when these sys-
tems operate over an increased frequency band. In particular, a
considerable difculty is faced when an array of CP with broad
frequency band has to be achieved. This challenge is due to
difculty of obtaining wideband and well balanced feeding
network, which could meet the constraint of space-limited
environment packed antenna array. Circularly polarized micros-
trip (CPM) antennas are particularly useful in communication
systems where the orientation of antennas is variable or is
unknown. CP is usually achieved by combining two orthogonal
linearly polarized waves radiating in phase quadrature. There
are currently two techniques commonly used in CPM antennas.
In the single feed technique, asymmetry is introduced into the
geometry of the microstrip radiator so that, when the antenna
excited at a carefully selected feed point, the antenna radiates
two degenerated orthogonal modes with a 90 phase difference.
In the dual feed technique, two separate and spatially orthog-
onal feeds are excited with a relative phase shift of 90. The
dual feed approach requires the use of a 90 hybrid or power
splitter with unequal lengths of transmission line to provide the
necessary phase shift. This method generally gives a larger AR
bandwidth if both the microstrip radiator and feeding network
are broadband. This technique, however, suffers from poor
polarization purity due to the cross-polarized components gen-
erated by the asymmetrical feed structure. Furthermore, dual-
feed technique results in a complicated antenna structure and
higher cost, in particular when stacked patches are used for
achieving broadband CP operation. In addition they require
larger feed structures, which leave less space for other circuit
components in the feed layer. On the other hand, single-feed
CPSM antennas can be arrayed and easily fed like any linearly
polarized patch antenna. Single feed leads to a reduction in
complexity, weight, and RF loss of the feed when these ele-
1784 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 50, No. 7, July 2008 DOI 10.1002/mop