A AP PP PL LI IC CA AT TI IO ON N O OF F G GI IA AN NT T M MA AG GN NE ET TO OI IM MP PE ED DA AN NC CE E

A A S SI IM MP PL LE E M MA AG GN NE ET TI IC C S SE EN NS SO OR R
A PROJECT REPORT

Submitted in partial fulfillment of the requirements for
the award of the degree of

MASTER OF SCIENCE
In
PHYSICS
by
P.SHIJIN BABU
PH08C024

under the guidance of
DR. G. MARKANDEYULU



DEPARTMENT OF PHYSICS
INDIAN INSTITUTE OF TECHNOLOGY MADRAS

APRIL 2010
i


C CE ER RT TI IF FI IC CA AT TE E


This is to certify that the work reported in this dissertation entitled Application of Giant
Magneto Impedance Effect- A Simple Magnetic Sensor submitted by Mr. P. Shijin
Babu (PH08C024) was carried out by him under my supervision at the Department of
Physics towards the partial fulfillment for the award of the Master of Science in Physics
at Indian Institute of Technology Madras



April 20, 2010 Dr.G.MARKANDEYULU
Professor
Advanced Magnetic Materials Laboratory
Department of Physics
Indian Institute of Technology Madras


ii


A AC CK KN NO OW WL LE ED DG GE EM ME EN NT TS S

I sincerely wish to express my deep sense of gratitude to my guide Prof. G.
Markandeyulu for his inspiring guidance, support and persistent encouragement
throughout the project work in this institute.
I take this opportunity to express my gratitude to Ms Sandhya Dwevedi and
Late Mrs. M.R. Sumathi for their incredible help. I like to thank Dr. R Niramala for
helping me in understanding basics of magnetism.
Also I like to thank Mr. M. Dhanapalan for his suggestions and help
regarding electronics and Mr. Manoharan for helping me with electronic components.



P.SHIJIN BABU


iii


C CO ON NT TE EN NT TS S

Page No.
C CH HA AP PT TE ER R 1 1: : I IN NT TR RO OD DU UC CT TI IO ON N 1
1.1 Giant magneto impedance effect 2
1.2 Theory of giant magneto impedance 5
1.3 Application of GMI sensors 7
1.31 Current sensors 7
1.32 Stress sensors 7
1.33 Magnetic sensors 8
1.4 Application of GMI sensors 11

C CH HA AP PT TE ER R 2 2: : E EX XP PE ER RI IM ME EN NT TA AL L T TE EC CH HN NI IQ QU UE ES S 12
2.1 Preparation of the ribbon 12
2.2 Melt spinning 12
2.3 GMI measurements 14

C CH HA AP PT TE ER R 3 3: : D DE ES SI IG GN NI IN NG G T TH HE E S SE EN NS SO OR R 15
3.1 Introduction 15
3.2 Ac power supply unit 17
iv

3.3 Battery power supply 18
3.4 Oscillator circuit 19
3.5 Sensing circuit 20
3.51 Schottky diode 21
3.52 Instrumentation Amplifier 22
3.6 Display 24

C CH HA AP PT TE ER R 4 4: : R RE ES SU UL LT TS S A AN ND D D DI IS SC CU US SS SI IO ON N 26
4.1 GMI studies 27
4.2 Sensor measurements 29
4.21 Measurement of the field produced by Helmholtz coil 29
4.22 Measurement of Earths magnetic field 32
4.23 Measurement of magnetic field variation in campus 34

C CH HA AP PT TE ER R 5 5: : C CO ON NC CL LU US SI IO ON N

38
R RE EF FE ER RE EN NC CE ES S 39






v

L LI IS ST T O OF F F FI IG GU UR RE ES S
F FI IG G. . N NO O. . P PA AG GE E N NO O. .


1.1 Change in impedance with the field of a 2
magnetic ribbon

1.2 Measurement of GMI 4

1.3 Illustration of dependence of skin depth on field for 4
a magnetic wire and thin film

1.4 A photograph of GMI sensor 8

1.5 Comparison of Different magnetic sensors 9

1.6 Schematic diagram of the sensor 10

2.1 Melt spinning apparatus 13

3.1 Block Diagram of the Sensor 16

3.2 Duel voltage power supply (+12/-12) using 17
7812 and 7912 regulator ICs

3.3 Pin diagram of 7812 and 7912 18

3.4 Battery Power supply Using 7812 and 7912 18

3.5 Circuit Diagram of the Colpitts Oscillator 19

3.6 Circuit diagram of the sensing circuit 20

3.7 Schottky Diode 21

3.8 Simple circuit diagram of an Instrumentation Amplifier 22
vi


3.9 Simplified circuit diagram and pin diagram of 23
AD 620 instrumentation amplifier

3.10 Pin diagram of PM129a DPM 24

3.11 A photograph of the magnetic sensor 25

4.1 XRD pattern of Co
68
Fe
5
Si
12
B
15
26


4.2 Variation of GMI of Co
68
Fe
5
Si
12
B
15
with field, 28
at 1MHz

4.3 Variation of GMI of Co
68
Fe
5
Nb
12
B
15
with field, 28
at 1 MHz

4.4 GMI ratio of Co
68
Fe
5
Si
12
B
15
with 29
frequency, at field 6Oe

4.5 Variation of sensor output voltage with magnetic field 31

4.6 Change in sensor output voltage with rotation in 33
Earths magnetic field

4.7 The chosen places for magnetic field measurement 35

4.8 Magnetic fields at different locations in the campus 37











vii

A AB BS ST TR RA AC CT T

Giant magnetoimpedance (GMI) has attracted intense research interest
since Panina and Mohri reported the effect in 1994 in Co based amorphous ribbons.
Since the effect is very sensitive to the external magnetic field, it has been exploited for
different types of magnetic sensors. The GMI sensors are highly sensitive, small in size
and consume very low power.

The project presents a simple mobile magnetic sensor based on GMI
effect. Even though the main objective of the project is the design and application of the
magnetic sensor, GMI studies on Melt spun magnetic ribbons are presented for the
better understanding of the phenomena. The sensing elements and the working
frequency of the sensor were chosen from these studies. The sensor can work on both
AC power and batteries. Other than the power supply part the sensor consists of a high
frequency oscillator, a sensing circuit and a digital panel meter for display purpose.

Three different types of field measurements were done using the sensor.
One is the measurement of field produced by the Helmholtz coil, second is the
measurement of Earths magnetic field and finally the most interesting- the magnetic
field variation in the campus. The sensor is found to be very useful in measuring low
magnetic fields. The sensor exhibited a maximum sensitivity of 27.1% (change in
impedance) in Earths magnetic field when finemet was used as the sensing element.
Making use of this sensitivity, a comparative study of variation in magnetic field inside
campus was done by measuring the local magnetic filed in ten different chosen places
in the campus.
1


1
1
I IN NT TR RO OD DU UC CT TI IO ON N

In the current technology-based modern world, magnetic sensors play a
very important role in all our life. Magnetic sensors are used in different of areas like
magnetic storage systems, industrial and military sectors, space research,
geomagnetic research etc [Lenz JE 1990]. Depending on the working situation and the
intensity of the field, a particular magnetic sensor is chosen from the wide range of
sensors. Some examples of magnetic sensors are fluxgate sensors, induction sensors,
hall effect sensors squid magnetic sensors etc. All sensors make use of one or more
field- dependant chemical or physical phenomena.
The recent discovery of the so called Giant Magneto Impedance effect
opened a new door towards high sensitive and low power magnetic sensors. The GMI
effect was first reported by Panina and Mohri in amorphous Co based wires in 1994
[Panina L V, Mohri K. 1994:]. Since then, GMI has obtained an important position in
research because of both scientific research interest and technological applications.

2

1 1. .1 1 G GI IA AN NT T M MA AG GN NE ET TO O I IM MP PE ED DA AN NC CE E E EF FF FE EC CT T: :
Giant magneto impedance effect is the large change in
impedance of a ferromagnetic conductor on the application of a steady magnetic field
in the presence of an ac current. The change in impedance of the conductor depends
on the intensity of the magnetic field, frequency of the ac signal, amplitude of the ac
signal and shape and type of the conductor. If Z(Hex=0) and Z(Hex) are the
impedance at without field and with field respectively, then the GMI ratio is defined as
GMI =
Z
Z
(%) =
Z(H
ex
)-Z(H
ex
=0)
Z(H
ex
=0)
100% 1.1
.
FIG 1.1 CHANGE IN IMPEDANCE WITH CHANGE IN FIELD OF A MAGNETIC RIBBON
3

At large ac frequencies, GMI ratio up to 360 % has been
observed in zero magnetostrictive amorphous wires and ribbons. After proper thermal
treatment (conventional, joule and magnetic annealing) sensitivity up to 1700% has
been reported. It is because of this high sensitivity, GMI became important topic for
sensor applications. The change in impedance of the conductor is due to the large
change in complex permeability of the conductor even in small magnetic field.
The impedance of the sample is
Z = (V
ac
/I
ac
) =R + j X 1.2
Where V
ac
is the ac voltage applied between the ends of the sample and
I
ac
is the ac current through the sample.
R is the DC resistance which is due to the scattering of electrons and
X is the reactance which is due to the inductance of the sample.
The impedance of a wire shaped conductor and thin film are given by
Z = R
dc
kt
j
0
(kt)
2]1(kt)
wire shaped conductor 1.3
Z = R
dc
jka coth(jka) thin film 1.4
Where R
dc
is the dc electrical resistance,J
0
and J
1
are the Bessel functions of the first
kind, t ,the radius of the wire and 2a is the thickness of the thin film. k = (1+j) / , where
j is the imaginary unit and is the electromagnetic skin depth. The skin depth is
4

defined as the distance measured from the surface of the conductor towards its center
to reduce the amplitude of the ac current to 1/e times of its maximum value.
=

I
in the case of wire 1.5
=

t
I
in the case of film 1.6
Where is the conductivity of the material,
f is the frequency of the ac signal,

is the circumferential permeability of the wire and

t
is the transverse permeability of the film.
In the presence of magnetic field, the skin depth of the sample changes since it
depends on the permeability of the sample. The skin depth decides the size of cross
sectional area available for the ac current which in turn decides the impedance of the
sample. This idea is illustrated in the picture in the next page

5


FIG.1.2 MEASUREMENT OF GMI



FIG.1.3 ILLUSTRATION OF DEPENDENCE OF SKIN DEPTH (
m
) ON FIELD FOR
A MAGNETIC WIRE (ABOVE) AND THIN FILM (BELOW)

6

The expected properties for a material to show high GMI effect are the following
High conductivity
High permeability
Low coercivety
Low remnence
High magnetization
Negligible or zero magnetostriction


1 1. .2 2 T TH HE EO OR RY Y O OF F G GI IA AN NT T M MA AG GN NE ET TO O I IM MP PE ED DA AN NC CE E E EF FF FE EC CT T: :
The mechanism and theory of GMI can be roughly divided in to three regimes
depending on the frequency of the ac current
Low frequency regime: In the low frequency region- up to 10 KHz , the change
in impedance of the sample is due to magneto inductive effect. When an ac signal
passes through the sample, it generates a circumferential time varying magnetic field,
which produces an axial electric field E
ax
.The value of induced voltage across the
sample is decided by the value of the electric field E
ax
on the surface of the sample and
sample length. The total voltage drop on the sample when an ac current passes
through, can be written as th the sum of the resistive voltage VL and inductive voltage
VR.. i e, V = VL + VR.
7

Resistive Voltage V
R
=R I 1.7
Inductive voltage V
L
= E
ax
(on surface) l =
I
c
2
L
int
I 1.8
So, total voltage V = R I
I
c
2
L
int
I 1.9
Where R is the dc resistance of the sample,
I is ac current passing through the sample,
is the frequency of the ac current, and
L
int
is the internal inductance of the sample.
In the case of a homogeneous magnetic wire, L
int
=

I
2
. So, it is concluded that at
low frequency, the effect of external magnetic field is to mainly change the
circumferential magnetic permeability of the sample which incidentally changes the
voltage drop across the sample. In low frequency region skin effect has no major part
in GMI since the skin depth is higher than the dimensions of the sample.
Moderate frequency regime: In the moderate frequency regime, which is up to a
few mega hertz it is the skin effect which plays very important role. When an ac current
flows through a conductor, the current tends to concentrate on the surface of the
conductor. Skin depth gives a measure of the skin depth. In moderate frequency
regime also, the problem of explaining change in impedance is solved by
understanding how the permeability of the sample changes due to the external field
and the frequency of the ac current since it is the major factor in deciding the skin
8

depth of the conductor. In the case of wires, it is the effective circumferential
permeability

eff
which decides the response of magnetic domains towards the
longitudinal field and the frequency of the ac current. The effective circumferential
permeability can be written as

eff
=

rot
+

mov
1.10
Where

rot
is the circumferential permeability due to the rotation of magnetization
and

mov
is the circumferential permeability due to domain wall motion.
At frequencies less than 500 KHz. Both terms contributes to the
circumferential magnetization of the sample. At higher frequencies, magnetization
rotation dominates because domain wall movements are suppressed by eddy currents.
High frequency regime: In high frequency region the theory of giant magneto
impedance is not clear as that in moderate and low frequency regimes. But the origin
of the GMI in high frequency regime is believed to be ferromagnetic resonance and it is
proved that both ferromagnetic resonance and exchange interaction plays important
role in it.
1 1. .3 3 A AP PP PL LI IC CA AT TI IO ON NS S O OF F G GM MI I S SE EN NS SO OR RS S: :
The main applications of GMI are the GMI sensors. Since GMI is very
sensitive to applied field, frequency of the ac current and stress, sensors can be
designed to measure the same quantities. Some important sensors are discussed
below.
9


1 1. .3 31 1 C CU UR RR RE EN NT T S SE EN NS SO OR RS S: :
In GMI current sensors, the measurement of the current is
achieved by making use of the magnetic produced by the current which is to be
monitored. A successful model of such a dc current sensor is produced by
R.Valensuela [ Valensuela R,Freijo JJ, Vazquez M Hernado A. 1997] in which the current which
is to be measured is allowed to pass through a solenoid having a sensing element at
the center. When the current flows through the solenoid, the axial magnetic field
produced by the current changes the impedance of the magnetic element. The sensing
element used in the sensor is Co
68
Fe
5
Si
12
B
15
amorphous wire. The main advantage of
a GMI current sensor is its reduced size, since the sensing element is just a wire. But
the GMI sensor mentioned above cannot be used to measure ac current. The research
is going on to develop+ ac/dc GMI current sensors and a prototype of such a sensor is
already suggested by Manh-Huong Phan and Hua-Xin Peng [Phan MH, Peng HX, Dung
2008].

1 1. .3 32 2 S ST TR RE ES SS S S SE EN NS SO OR RS S: :
Stress sensors can be designed by making use of the fact that GMI has
dependence on the applied stress. The advantage of the stress sensor over
conventional stress sensors is its sensitivity. For example a semi conductor strain
gauge shows 15% change in its resistance on the application of maximum strain in the
10

safe limit while a GMI stress sensor shows 315% change in inductance when the
limiting value of strain is applied [Bowles A, Gore J, Tomks G Anew 2005].

1 1. .3 33 3 M MA AG GN NE ET TI IC C S SE EN NS SO OR RS S: :
Since even a very low field changes the impedance by orders of
magnitude, GMI is the ideal tool for magnetic sensors. A GMI sensor usually uses
ribbons, films or wires as sensing elements. GMI sensors have many important
advantages over conventional magnetic sensors, out of which sensitivity is the most
important of all these. Talking about sensitivity, Yabukami has designed a GMI sensor
which can measure field up to 1.7 1u
-8
Oe at 500 KHz [Yabukami S, Mawatari H,
Horikoshi N, Murayama Y, Ozawa T, ishiyama K, 2005]. This resolution is much more than the
resolution possible by normal fluxgate sensors. Aichi Steel Corporation in Japan has
already developed a number of commercial GMI sensors for technological applications.
Another advantage of the GMI sensors are its small size. For example, the head length
of a normal fluxgate sensor is around 20mm while that of a GMI sensor is just around
1mm. Other than this GMI sensors have better thermal stability than conventional
magnetic sensors.
11


Fig.1.4 A photograph of GMI sensor
The comparison of the magnetic GMI sensor with other magnetic sensors is shown
below. Note that the range of GMI sensor is from 10-8 to more than 106 gauss.


FIG. 1.5 COMPARISON OF DIFFERENT MAGNETIC SENSORS
12


A magnetic sensor can be produced in two ways, one is contact
method and the other is non-contact method. In contact method the GMI wire or ribbon
is exposed to the magnetic field and the voltage drop over the wire or ribbon is
measured. In search coil method, the GMI material is placed inside at the center of the
coil and the field is applied along the length of the coil. When an ac current passing
through the coil, emf is induced on the coil which is proportional to change in flux and
the inductance of the coil. In the case of a coil with magnetic core, inductance is given
by
L = n
2
V
0

r
1.11
Where n is the number of turns in unit length of the coil,
V, volume occupied by the coil

0,
permeability in free space and

r,
the relative permeability of the core.
So in the presence of an external field, the permeability of the core changes which
results in change in impedance and voltage drop of the coil. The schematic diagram of
the magnetic sensor is given below
13


Fig. 1.6 Schematic diagram of the sensor

A high frequency ac signal is applied to the search coil with magnetic core.
The voltage drop of the search coil in no field is replicated by a voltage divider and both
are given to the input of a differentia amplifier. The amplifier only amplifies the change
in voltage along the coil and the output is given to the display. The detailed design of
the sensor is given in chapter 3.
1 1. .4 4 A AP PP PL LI IC CA AT TI IO ON N O OF F G GM MI I S SE EN NS SO OR RS S: :
GMI sensors can be used in wide range of fields, some of the areas which
can benefit from GMI sensors are given below
Space research and aerospace applications
Magnetic storage systems
14

Automatic traffic controlling
Bio magnetic measurements
Geo magnetic research
Stress sensing applications
Target detection and non destructive crack detection




15

2
2

E EX XP PE ER RI IM ME EN NT TA AL L T TE EC CH HN NI IQ QU UE ES S
2 2. .1 1 P PR RE EP PA AR RA AT TI IO ON N O OF F T TH HE E R RI IB BB BO ON N: :
There are two important steps in making tee magnetic ribbons. First one is
the homogeneous mixing of the constituents using arc melting. Second one is the melt
spinning to produce ribbons. First, the elements are weighed precisely in the desired
proportions and melted several times using arc melting. To ensure the constituents are
mixed well, the melting is repeated several times.
2 2. .2 2 M ME EL LT T S SP PI IN NN NI IN NG G: :
After homogeneous mixing of the elements, the alloy is passed to melt
spinning setup to produce amorphous ribbons. The main parts of the melt spinning
setup are a commercial radio frequency furnace and a copper drum which is connected
to a high speed motor. The material is placed inside a quartz tube whose top end is
connected to an argon cylinder and having a small orifice (about 6mm) at the bottom.
The duty of argon gas is to prevent the material from oxidation and to push the material
out of the quartz tube. A high frequency high voltage induction coil is placed around
16

coil to melt the material inside the sample. The sample melts because of eddy current
heating. The quartz tube is placed 2-3 mm above the copper drum having a radius 18
cm and rotating at 2800rpm. The quartz tube is placed at angle 7
0
to the vertical for the
easy output of the ribbons. When the material is melted inside the tube, argon pressure
ejects the melt which falls on the rotating copper drum. The thickness of the ribbon is
inversely proportional to the rotation of the motor. The quality of the ribbon depends on
the pressure of the argon gas inside the quartz tube, the distance between quartz tube
and the copper drum and the quality of the surface of the copper drum.


17


FIG. 2.1 MELT SPINNING APPARATUS

2 2. .3 3 G GM MI I M ME EA AS SU UR RE EM ME EN NT TS S: :
The GMI measurements are made using HP 4192A LF IMPEDANCE
ANALYSER, Helmholtz coil and a constant current source for the Helmholtz coil. The
measurements are made in frequency range 100 KHz to 10 MHz by the application of
18

a constant current 10mA through the sample. The field is applied by the help of
Helmholtz coil in the range -6 Oe to +6 Oe in the longitudinal direction of the ribbon.
The field is varied by varying the current through the Helmholtz coil.



19

3
3

D DE ES SI IG GN N I IN NG G T TH HE E S SE EN NS SO OR R

3 3. .1 1 I IN NT TR RO OD DU UC CT TI IO ON N: :
Over the last few years there has been many models of magnetic
sensors based on GMI effect. Over all those sensors, there are only very few which are
mobile and handy. The sensor discussed here belongs to this category. It is handy
and works on battery so that it can be taken anywhere to take measurement just like a
multimeter. This section explains the basic idea and fabrication of such a sensor.
Other than the battery power source, its always good to have a an AC
power source for the sensor so that battery power can be saved in case if there is any
AC plug around. So the power supply part of the sensor includes a duel regulated
power supply which uses the AC mains along with a back up battery power supply .
The schematic diagram of the sensor is given below. Other than the
power supply part, the sensor consists of three parts. The high frequency Oscillator
part, the sensing part and the display part. The high frequency oscillator part is a
colpitts oscillator, which produces an alternating current of frequency 10 mega hertz
20

approximately. The ac signal is passed over to the next part in which the signal is
applied to a search coil which actually senses the magnetic field. The search coil is
followed by a schottky barrier diode which rectifies the voltage drop on the search coil
followed by a instrumentation amplifier. The duty of the instrumentation amplifier is to
cut off the unwanted voltage and to amplify it accordingly for the display part to display
it.


FIG. 3.1 BLOCK DIAGRAM OF THE SENSOR
The following paragraphs will discuss each section in detail with appropriate circuit and
figures.

21

3 3. .2 2 A AC C P PO OW WE ER R S SU UP PP PL LY Y U UN NI IT T: :
The duty of the power supply is to supply constant voltage to
the sensing circuit, oscillator and the digital panel meter. The Oscillator demands a
constant +12 volt, The sensing circuit demands +12 and -12 volt and the digital panel
meter needs voltage between 7 and 11. The circuit diagram of the power supply used
in the sensor is given below. The AC 230 volt is given to the center tapped step down
transformer whose output voltage is 15-0-15. After the transformer, follows the usual
rectifier circuit. The diodes D1,D2,D3,D4 rectifies the ac voltage and the capacitors
C1,C2,C3,C4 filters the ac components and gives a smooth dc voltage to the input of
the voltage regulator IC s. IC 1 is 7812 positive regulator ic and IC 2 (7912) is negative
regulator IC. The terminals of the regulator IC s can be identified from the picture given
below. Since the digital panel meter cannot take 12 volt, an appropriate voltage divider
is used to produce a voltage between 7 and 11 out of +12 volt.

22



FIG. 3.2 DUEL VOLTAGE POWER SUPPLY (+12/-12) USING 7812 AND 7912 REGULATOR ICS

7812 7912
FIG 3.3 PIN DIAGRAM OF 7812 AND 7912
3 3. .3 3 B BA AT TT TE ER RY Y P PO OW WE ER R S SU UP PP PL LY Y: :
The battery power supply is made by connecting four nine volt
batteries in series. The end terminals gives +18 and -18 which are given to the input
23

terminals of regulator IC s, 7812 and 7912.The regulator IC give a constant +/- 12 volt
for the oscillator and the sensing circuit. Since the DPM cannot afford 12 volt, a
connection is taken from positive terminal of the one of the batteries to produce a nine
volt terminal.

FIG. 3.4 BATTERY POWER SUPPLY USING 7812 AND 7912
3 3. .4 4 O OS SC CI IL LL LA AT TO OR R C CI IR RC CU UI IT T: :
The high frequency ac signal needed for the sensing circuit is
produced by the colpitts oscillator. The reason to choose colpitts oscillator from other
oscillators is that it is very simple and sturdy. The circuit diagram of the oscillator is
give below. The resistors R1, R2 and R3 are part of the voltage divider and the
inductor L1 along with the capacitors C1 and C2 determines the frequency of the
24

oscillator. The voltage needed for feedback is taken from the voltage divider made by
the two capacitors in serial. The frequency of the oscillator is given by

2.1

FIG 3.5 CIRCUIT DIAGRAM OF THE COLPITTS OSCILLATOR
3 3. .5 5 S SE EN NS SI IN NG G C CI IR RC CU UI IT T: :
Sensing circuit is the main part of the magnetic sensor. The circuit
diagram of the sensor is given below. The output of the oscillator is given to the search
coil which is connected in series with a resistor. The purpose of the resistor is to keep
25

the voltage drop across the coil to an optimum value. The sensing coil is a simple coil
inside which a magnetic material is placed as core. In this case it is melt spun magnetic
ribbon. Since the ribbon shows GMI effect, when an axial magnetic field is applied, the
voltage drop across the coil changes according to the intensity of the field present. This
is the basic idea of the sensor. Since the voltage drop over the coil without the field is
always added to the voltage drop in the presence of field, it should be subtracted from
the actual voltage drop to increase precision.
FIG. 3.6 CIRCUIT DIAGRAM OF THE SENSING CIRCUIT. THE VALUES OF THE RESISTORS ARE
R1=10K, R2=30K (THREE 10K IN SERIES), R3= 0 - 0.5K, R4=1K AND R5=10K.
To subtract the unwanted voltage drop and to amplify only the change in voltage
drop produced by the field, An instrumentation amplifier is used. The voltage drop over
26

the coil, which is rectified using a schottky diode is given as one input of the amplifier.
The second input is from a variable resistor which works as a voltage divider and
replicates the voltage drop of the coil when no field is present. The schottky diode and
the instrumentation amplifier used are discussed below.
3 3. .5 51 1 S SC CH HO OT TT TK KY Y D DI IO OD DE E: :
Schottky diode is a special kind of semi conductor diode with very low forward
voltage drop and very fast switching action. The main reason to choose schottky diode
over the normal diode is its very low barrier voltage. The normal silicon diode has a
voltage drop of 0.7 volt, which means in some field, if the coil produces a voltage drop
less than 0.7 volt, the sensor will not be able to measure the field. The voltage drop of
the schottky diode used in the circuit (RA 69), has a voltage drop of 0.2 volt which is
why it is preferred for the sensor circuit.


Fig. 3.7 Schottky Diode Schematic Symbol
27

Another reason to choose schottky diode over normal diode is its very
low reverse recovery time. A normal p-n junction diode take hundreds of nano seconds
to change from conducting state to non conducting state while a schottky diode takes
practically no time for it which makes it ideal for very high frequency circuits.
3 3. .5 52 2 I IN NS ST TR RU UM ME EN NT TA AT TI IO ON N A AM MP PL LI IF FI IE ER R: :
An instrumentation amplifier is an advanced form of the differential amplifier.
An instrumentation amplifier usually consist of a differential amplifier with one or more
voltage followers which makes it suitable for the construction of weighing machines,
Temperature sensors, field sensors etc. The additional benefits over simple differential
amplifier are high common mode rejection ratio, high input impedance, low noise and
low dc offset voltage. A simple circuit diagram of an instrumentation amplifier is given
below

FIG. 3.8 SIMPLE CIRCUIT DIAGRAM OF AN INSTRUMENTATION AMPLIFIER
28

As shown in the diagram, the above instrumentation amplifier consists of three
op-amps out f which one is a differential amplifier with a gain equal to R3/R2 and
differential input resistance 2 R2.The other two op-amps are arranged in a such a way
that it buffers the input voltages V1 and V2.The voltage gain of the setup is given by
2.2
In the sensor discussed her, the instrumentation amplifier used is AD 620. The
simplified actual circuit diagram and pin diagram of AD 620 is given below. Another
advantage of instrumentation amplifier including AD 620 is that the gain can be varied
by changing just one resistance value. In the case of AD 620, the voltage gain is given
by
Av = 1+(49.4k/RG) 2.3

29



FIG. 3.9 SIMPLIFIED CIRCUIT DIAGRAM AND PIN DIAGRAM OF AD 620 INSTRUMENTATION
AMPLIFIER
In the circuit used in the sensor, voltage drop of the coil is given to the
non inverting input terminal while the voltage drop from the variable resistor is given to
the inverting terminal. In this way the variable resistor can be used as a zero correction
knob. This arrangement keeps the output voltage positive always. The gain of the
30

amplifier can be selected between 6 and 60 by using the two way switch. This is
achieved by connecting two resistors of resistance value 1k and 10 k between
terminals 1 and 8 through a two way switch. The output is taken from terminal 6 is
passed to the display section.
3 3. .6 6 D DI IS SP PL LA AY Y
To display the output voltage of the amplifier, a 3 digital panel meter
is used. The DPM is cheap and available in all electronic shops. A picture of PM 129
3 LED DPM is given below. The newly bought PM129A DPM can only measure
voltages up to 200mV. But by changing the specific resistor values on the board, it can
be changed to 20V, 200V and even 1000 V.
b

FIG. 3.10 PIN DIAGRAM OF PM129A DPM
31

A complete picture of the sensor designed is given below .


FIG 3.11PHOTOGRAPH OF THE SENSOR
1.Battery power supply
2.display
3.Main circuit (Sensing circuit and Oscillator)
4.Sensing coil
5. Regulated power supply
32

4
4
R RE ES SU UL LT TS S A AN ND D D DI IS SC CU US SS SI IO ON N: :
Even though the main objective of the project is to design a magnetic sensor and
to find practical application by it, a basic study of GMI has been done to understand the
concept and to be familiar with. The X-ray pattern of the Fe
68
Co
5
Si
12
B
15
melt spun
ribbon at different annealing temperature is given below

FIG 4.1 XRD PATTERN OF Fe
68
Co
5
Si
12
B
15
MELT SPUN RIBBON AT DIFFERENT ANNEALING
TEMPERATURES
33

4 4. .1 1 G GM MI I S ST TU UD DI IE ES S: : The dependence of GMI on the applied magnetic field
and ac current frequency are studied using an impedance analyzer and Helmholtzs
coil. The frequency has been changed from 100 kHz to 10 MHz and the magnetic
field from -6 Oe to 6 Oe. For field variation measurements, 5 cm long melt spun
Co
68
Fe
5
Si
12
B
15
and Co
68
Fe
5
Nb
12
B
15
ribbons are used (the samples are made by
Ms. Sandhya Dwevedi). Co
68
Fe
5
Si
12
B
15
ribbon alone is used for freequency
measurements.From the graph given below it is clear that the impedance changes
rapidly up to a few mega hertz, and after that the slop decreases. This can be
explained by the effect of skin effect on impedance of the sample. As explained earlier,
in moderate freequency regime, the skin effect is relatively large and the relation
between freequency and skin depth is given by
=

I
4.1
Where is the resistivity of the ribbon,
the permeability and f the frequency of the ribbon.
To study the dependence of impedance on field, constant current of
amplitude 10 mA and frequency 1 MHz is given to the ribbon and the field is varied
using Helmholtz coil. Since the frequency is 1MHz, the variation in impedance still can
be explained by skin effect. The applied field filed decreases the permeability of the
ribbon, which increases the skin depth which results the decrease in impedance. The
variation of GMI ratio with field is shown in the graph below
34


FIG 4.2 THE VARIATION OF GMI OF CO
68
Fe
5
Si
12
B
15
WITH FIELD AT 1MHZ

FIG 4.3 THE VARIATION OF GMI OF CO
68
Fe
5
Nb
12
B
15
WITH FIELD AT 1 MHZ
35


FIG 4.4 THE CHANGE IN GMI RATIO OF CO
68
Fe
5
Si
12
B
15
WITH FREQUENCY AT FIELD 6 Oe
4 4. .2 2 S SE EN NS SO OR R M ME EA AS SU UR RE EM ME EN NT TS S: :
The sensor whose design has been explained in the report is found to
be very useful for low field measurements. Three different types of field measurements
were taken using the sensor.
1. Measurement of the field produced by Helmholtz coil
2. Measurement of Earths magnetic field using different samples
3. Measurement of Magnetic field variation in IIT campus
36

4 4. .2 21 1 M ME EA AS SU UR RE EM ME EN NT T O OF F T TH HE E F FI IE EL LD D P PR RO OD DU UC CE ED D B BY Y H HE EL LM MH HO OL LT TZ Z
C CO OI IL L: : In this measurement, the ribbon is placed inside the sensing coil and
both are placed between the Helmholtz coils with the length of the ribbon parallel to the
field. Two different readings are taken using different ribbons, Finemet and
CO
68
Fe5Si
12
B
15
. The field is increased in steps of 0.06Oe from zero to 2Oe and the
corresponding sensor output voltage is noted. The graph representing the
measurement is shown below. The one advantage of the sensor is that the ribbon or
wire which acts as the core can be changed for appropriate field measurements. Even
though the graphs are not linear, with an appropriate calibration table the sensor can
be used to measure low magnetic fields.







37


FIG 4.5 VARIATION OF SENSOR OUTPUT VOLTAGE WITH MAGNETIC FIELD
38

4 4. .2 22 2 M ME EA AS SU UR RE EM ME EN NT T O OF F E EA AR RT TH H S S M MA AG GN NE ET TI IC C F FI IE EL LD D: :
To measure the Earths magnetic field, the coil carrying ribbon is rotated in
Earths magnetic field and the change in sensor output voltage is noted. When the coil
is perpendicular to the Earths magnetic field (E-W direction), the field is perpendicular
to the easy magnetization axis of the magnetic ribbon (for a fresh ribbon easy axis is
decided by the shape and demagnetizing effects). So Earths magnetic field has no or
negligible effect on the coil when it is placed perpendicular to it. But when the coil is
rotated, the parallel component of the Earths magnetic field acts on the ribbon and the
impedance of the coil starts changing. When it is exactly parallel to the direction of the
field (N-S direction), the whole field is acting on the ribbon and the change in
impedance of the coil is maximum. So the difference in sensor reading is proportional
to the Earths magnetic field. The first graph shows relatively small changes in sensor
reading while the second one bigger change. From the graphs, Co
68
Fe
5
Si
12
B
15
ribbon
shows 9.11%(B) change in impedance CO
68
Fe
5
Nb
12
B
15
(B) ribbon shows 5.49%
Finemet shows 27.12%(D) and CO
68
Mn
5
Si
12
B
15
shows 25.79%(E) in earths magnetic
field.

39


FIG 4.6 CHANGE IN SENSOR OUTPUT VOLTAGE WITH ROTATION IN EARTHS MAGNETIC FIELD
40

4 4. .2 23 3 M ME EA AS SU UR RE EM ME EN NT T O OF F M MA AG GN NE ET TI IC C F FI IE EL LD D V VA AR RI IA AT TI IO ON N I IN N
C CA AM MP PU US S: : An interesting study of the magnetic field variation in IITM campus has
been done by taking the sensor to different places and measuring the filed in the local
area .The sensor recorded considerable amount of change in magnetic field in
campus. But it is important to note that the changes in field mentioned here are the
relative change in magnetic field, not the exact values.
41


FIG 4.7 THE CHOSEN PLACES FOR MEASUREMENT OF MAGNETIC FIELD
42

The places numbered in the picture are these
1. Near main entrance
2. Construction area
3. Lake side
4. Peliamman temple
5. Stadium
6. Gajendra circle
7. OAT
8. Sangam ground
9. Near biotechnology department
10. Velachery gate

The variation in the field in the campus is measured using CoFeSB magnetic ribbon.
The relative change in magnetic filed over the campus is shown in the graph below.
From collected values, stadium has the smallest and biotechnology department has
the highest values of magnetic field.
43


FIG 4.8 MAGNETIC FIELD AT DIFFERENT LOCATIONS IN CAMPUS
1. Near main entrance
2. Construction area
3. Lake side
4. Peliamman temple
5. Stadium
6. Gajendra circle
7. OAT
8. Sangam ground
9. Near biotechnology department
10. Velachery gate
44

5
5

C CO ON NC CL LU US SI IO ON NS S
The GMI studies on ribbons explain the basic idea and mechanism of GMI.
The Co
68
Fe
5
Nb
12
B
15
ribbon shows a maximum of 11.2% and Co
68
Fe
5
Si
12
B
15
ribbon
shows maximum of 26.7% change in Impedance at frequency 1MHz.The magnetic
sensor developed is found to be very useful in low magnetic fields. Using
Co
68
Fe
5
Si
12
B
15
and

Co
68
Fe
5
Nb
12
B
15
magnetic ribbons as sensing elements, the field
produced by a Helmholtz coil was measured and the corresponding graphs are given.
Using four different ribbons CO
68
Fe
5
Nb
12
B
15
,

Co
68
Fe
5
Si
12
B
15,
CO
68
Mn
5
Si
12
B
15
and
finemet the Earths magnetic field was measured. The corresponding percentage
change impedance are 5.49%, 25.79%,, 9.11% and 27.12%. Also study of variation in
magnetic field in campus has been done and a graph was drown showing the relative
change in magnetic field with different locations.



45

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