MP4303

2006-10-27 1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors in One)
MP4303

High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching



Small package by full molding (SIP 12 pins)
High collector power dissipation (4-device operation)
: P
T
= 4.4 W (Ta = 25C)
High collector current: I
C (DC)
= 2 A (max)
High DC current gain: h
FE
= 2000 (min) (V
CE
= 2 V, I
C
= 1 A)

Absolute Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
120 V
Collector-emitter voltage V
CEO
100 V
Emitter-base voltage V
EBO
6 V
DC I
C
2
Collector current
Pulse I
CP
4
A
Continuous base current I
B
0.5 A
Collector power dissipation
(1 -evice operation)
P
C
2.2 W
Collector power dissipation
(4-device operation)
P
T
4.4 W
Junction temperature T
j
150 C
Storage temperature range T
stg
55 to 150 C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

Array Configuration

Industrial Applications
Unit: mm


JEDEC
JEITA
TOSHIBA 2-32C1B
Weight: 3.9 g (typ.)
1
R1 R2
7
R1 4.5 k R2 300
6
12 8 5
2 3 10 4 9 11
MP4303
2006-10-27 2
Marking


Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance from junction to
ambient
(4-device operation, Ta = 25C)
R
th (j-a)
28.4 C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260 C

Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= 120 V, I
E
= 0 A 10 A
Collector cut-off current I
CEO
V
CE
= 100 V, I
B
= 0 A 10 A
Emitter cut-off current I
EBO
V
EB
= 6 V, I
C
= 0 A 0.5 2.5 mA
Collector-base breakdown voltage V
(BR) CBO
I
C
= 1 mA, I
E
= 0 A 120 V
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= 10 mA, I
B
= 0 A 100 V
h
FE (1)
V
CE
= 2 V, I
C
= 1 A 2000 15000
DC current gain
h
FE (2)
V
CE
= 2 V, I
C
= 2 A 1000

Collector-emitter V
CE (sat)
I
C
= 1 A, I
B
= 1 mA 1.5
Saturation voltage
Base-emitter V
BE (sat)
I
C
= 1 A, I
B
= 1 mA 2.0
V
Transition frequency f
T
V
CE
= 2 V, I
C
= 0.5 A 100 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz 20 pF
Turn-on time t
on
0.4
Storage time t
stg
4.0 Switching time
Fall time t
f



I
B1
= I
B2
= 1 mA, duty cycle 1%
0.6
s

I
B
1

20 s
V
CC
= 30 V
Output
3
0

I
B2
I
B1
Input
I
B
2

MP4303
JAPAN Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
MP4303
2006-10-27 3
Emitter-Collector Diode Ratings and Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Maximum forward current I
FM
2 A
Surge current I
FSM
t = 1 s, 1 shot 4 A
Forward voltage V
F
I
F
= 0.5 A, I
B
= 0 A 2.0 V
Reverse recovery time t
rr
1.0 s
Reverse recovery charge Q
rr
I
F
= 2 A, V
BE
= 3 V, dI
F
/dt = 50 A/s
5 C

Flyback-Diode Rating and Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Maximum forward current I
FM
2 A
Reverse current I
R
V
R
= 120 V 0.4 A
Reverse voltage V
R
I
R
= 100 A 120 V
Forward voltage V
F
I
F
= 0.5 A 1.8 V

MP4303
2006-10-27 4





























































Collector current I
C
(A)

V
CE (sat)
I
C

C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e

V
C
E

(
s
a
t
)


(
V
)


Collector current I
C
(A)

V
BE (sat)
I
C

B
a
s
e
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e

V
B
E

(
s
a
t
)


(
V
)

0.1
0.5
Common emitter
I
C
/I
B
= 500
0.3 0.5 1 3 5
1
3
5
10
25
100
Ta = 55C
0.1
0.5
Common emitter
I
C
/I
B
= 500
0.3 0.5 1 3 5
1
3
5
10
25
100
Ta = 55C

Collector current I
C
(A)

h
FE
I
C


D
C

c
u
r
r
e
n
t

g
a
i
n


h
F
E


Base current I
B
(mA)

V
CE
I
B


C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r

v
o
l
t
a
g
e


V
C
E


(
V
)

)

Collector-emitter voltage V
CE
(V)

I
C
V
CE


C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
A
)


Base-emitter voltage V
BE
(V)

I
C
V
BE


C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
A
)

0
0
1
2
3
4
1 2 3 4 5
Common emitter
V
CE
= 2 V
25
55
Ta = 100C
100
0.03

25
55
Tc = 100C
0.1 0.3 1 3 10
300
500
1000
3000
5000
10000
Common emitter
V
CE
= 2 V
0
0

Common emitter
Ta = 25C
1
2
3
4
2 4 6 8 10
4 2
1
0.4
I
B
= 0.15 mA
0.2
0.3
0.5
0
Common emitter
Ta = 25C
0
0.1 0.3 1 3 10 30 100 300
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1.5
I
C
= 4 A
3
2
1
0.5
0.1
500
MP4303
2006-10-27 5




























































0
0


Circuit board
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
40
80
120
160
200
1 2 3 4 5
(4) (2) (1) (3)

Collector-emitter voltage V
CE
(V)

Safe Operating Area

C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
A
)






Pulse width t
w
(s)



Ambient temperature Ta (C)

P
T
Ta

T
o
t
a
l

p
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n


P
T


(
W
)


Total power dissipation P
T
(W)

T
j
P
T


J
u
n
c
t
i
o
n

t
e
m
p
e
r
a
t
u
r
e

i
n
c
r
e
a
s
e

T
j


(

C
)

0.01
1

3 5 10 30 50 100 300
0.03
0.05
0.1
0.3
0.5
1
3
5
10

*: Single nonrepetitive pulse
Ta = 25C
Curves must be derated linearly
with increase in temperature.
I
C
max (pulsed)*
10 ms*
1 ms*
100 s*
V
CEO

max

r
th
t
w

T
r
a
n
s
i
e
n
t

t
h
e
r
m
a
l

r
e
s
i
s
t
a
n
c
e

r
t
h


(

C
/
W
)

0
0
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Circuit board
2
4
6
8
10
40 80 120 160 200
(4)
(2)
(1)
(3)
0.001

0.01 0.1 1 10 100 1000
Curves should be applied in thermal
limited area. (Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
(3)
(2)
(1)
1
3
10
30
100
300
(4)
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation Circuit board
MP4303
2006-10-27 6


RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.