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where VG,M11,12 is the output voltage of this converter which is also the
gate voltage of transistor M15. The transistor M15 is assumed to be in
the triode region and acts as a voltage controlled resistor. For small
drain-source voltage, the resistance exhibited by M15 is given as
1
RDS;M15 ’ ð5Þ
Fig. 1 Various functions on dB scale, and variable x as linear and KM12 ðVG;M11;12 VTH Þ
nonlinear functions of t
a Functions on dB scale Consequently, the current (I þ I0) flowing through M15 will generate a
b Variable x as linear and nonlinear functions of t drain-source voltage, VDS,M15 ¼ RDS,M15(I þ I0), proportional to
(I þ I0)=(I I0). Hence, the following equation applies
Proposed idea: EVVCs are usually implemented with bipolar or I þ I0
Vout ¼ VDS;M15 ’ M ð6Þ
MOS transistors in weak inversion, because of their exponential I I0
I–V characteristics. However, bipolar transistors are not compatible
with CMOS technology, and MOS transistors in weak inversion are where M is a constant. I1 is a function of the input differential voltage
limited to low-frequency applications because of their poor frequency Vd ¼ Vinþ Vin. Finally, from (6) the pseudo-exponential approxima-
response. Consequently, the ‘pseudo-exponential’ generators [1, 2] tion of the proposed circuit shown in Fig. 2 is given as
and the Taylor series approximation [3, 4] have been introduced as kVd þ I0 kV =I þ 1
alternatives. The pseudo-exponential function is given as Vout ¼ M ¼M d 0 ð7Þ
kVd I0 kVd =I0 1
eax 1 þ ax
f ðxÞ ¼ e 2ax ¼ ffi ð1Þ In (7), the output voltage Vout is obviously a pseudo-exponential
eax 1 ax
function of the Vd, which is the same form of expression as in (1),
where a and x are the coefficient and the independent variables, where a ¼ k=I0.
respectively. Equation (1) is valid for jaxj 1. Using MATLAB to The I–V performance of the VCC is shown in Fig. 3. When the
investigate (1), the results show 15 dB linear range with the linearity supply voltage is reduced as shown in Fig. 3 by the solid line, as Vd
error < 0.5 dB for jxj < 0.42 as shown in Fig. 1a by the dashed line, increases to saturate either input transistors in the differential pair, the
Authorized licensed use limited to: NATIONAL INSTITUTE OF TECHNOLOGY WARANGAL. Downloaded on November 1, 2008 at 11:55 from IEEE Xplore. Restrictions apply.
linear relation of I ¼ bVd no longer exists because of cutoff or weak
inversion operation of either transistor. This results in a narrow window
for differential-input voltage at low-voltage applications. Therefore, for
the VCC to achieve large differential-input swing as shown in Fig. 3 by
the dashed line, the supply voltage should be high; however, the power
consumption is high as well. This issue is not compatible for low-
voltage low-power applications. Fortunately, the idea in this Letter not
only opens up a possibility to implement the I–V characteristic of the
VCC at low-voltage applications but also extends the output range of
the EVCC; hence, this idea is significant.
Authorized licensed use limited to: NATIONAL INSTITUTE OF TECHNOLOGY WARANGAL. Downloaded on November 1, 2008 at 11:55 from IEEE Xplore. Restrictions apply.