Академический Документы
Профессиональный Документы
Культура Документы
Outlines
Automotive Embedded
Systems
3/5/2014
System requirements
L-Line(13)
K-Line(55)
OXYD(28)
OXYHD(Int.)
OCSC(39)
Knock
(11,30)
PreProcessor
Crankshaft
(49,48)
PreProcessor
CAM(8)
VSpeed(9)
FPM(47)
TLE6230GP
350mA/50V..75V
Extension
Slot
NFP-50A
Passive
Filters
System
Control
EEPROM/
Flash Memory
Am29F040
NM24C04
Micro
Controller
C509L
Output Drivers
Reserved(40)
ACCR(41)
EGRP(50)
TPS(53)
MVM(27)
Signal Conditioners
MAT(44)
CTS(45)
PSS(51)
Reserved(52)
MAF(7)
TPS2814D/
IGBTs
K, L Line
Interface
SI9243EY
Resistive
Sensor
Reserved(42)
Voltage Inputs
Example
TLE6220GP
2A/
60V..80V
TLE6220GP
BTS933
Power Regulators
/Reset Circuit
TLE4266G
TLE4267G
TLE4729G
BSP78
BSP78
SAC1-4(1)
SAC2-3(20)
TSO(43)
FCSO(54)
Reserved(38)
ACCR(25)
CFR(6)
MR(46)
FPR(3)
MFIL(22)
ISV(36)
Reserved(31)
CPV(5)
EGRV(17)
Injector4(34)
Injector3(35)
Injector2(16)
Injector1(23)
OSH(33,15)
IAC-A(4),B(26)
-C(21),D(29)
Reserved(32)
EGRP(50)
3/5/2014
ECU
Transmission Path
Susceptible to
Interference
(analog)
SE
Signal
Conditioning
(Analog)
ECU
A/D (digital)
ECU
Transmission Path
Multiple
Tap-off
Resistant to
Interference
(analog)
A/D
ECU
(digital)
ECU
Transmission Path
A/D
Immune to
Bus
Interference
Compatible (digital)
Mechatronics
ECU
(digital)
ECU
Transmission Path
Immune to
Interference
Compatible (digital)
Bus
A/D C
ECU
(digital)
3/5/2014
3/5/2014
Application
Communication API
OSEK/COM
Standard API
OSEK/COM
Standard Protocol
OSEK/COM
Device Driver
Interface
Interaction Layer
Network API
OSEK/VDX
Network
Management
Network Layer
3/5/2014
Functional Applications
Multimedia
Data Rate
MOST
X-by-wire
FlexRay
Safety Bus
InfotainmentControl
Body
Electronics
Requirements
Consumer
Interface
Powertrain and
Vehicle Dynamics
Telematics Applications
1 Mbits/s
CAN
20 Kbits/s
Sub-Bus
LIN
Safety/Reliability
3/5/2014
Hall-Effect
If a current-carrying conductor is kept in a
magnetic field, the magnetic field exerts a
force on the moving charge carriers,
tending to push them to one side of the
conductor, producing a measurable
voltage difference between the two sides
of the conductor.
3/5/2014
Hall-Effect Sensors
Commutation Sequence
Torque-Speed Characteristic
3/5/2014
3/5/2014
BLDC Control
CW
CCW
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3/5/2014
Contents
Effects of power quality
Power Quality definitions revisited
What is needed for PQ monitoring ?
GE Multilins solution
PQMII
EPM9000 series
Summary
Monitor and Analyze Power Disturbances, Disruptions & Harmonics
PQ is a Business Problem
scrambled data
interrupted communications
a frozen mouse
system crashes and equipment failure
3/5/2014
Who is Affected?
PQ Definitions Revisited
IEEE Categories
Std 1159-1995
Short Duration Variations
Lost production
Scrap
Costs to restart
Labor costs
Equipment damage and repair
Other costs
Typical Duration
Instantaneous Sag
0.5 30 cycles
Momentary Sag
30 cycles 3 sec
Temporary Sag
3 sec 1 min
PQ Definitions Revisited
PQ Definitions Revisited
IEEE Categories
Std 1159-1995
IEEE Categories
Std 1159-1995
Typical Duration
Instantaneous Sag
0.5 30 cycles
Instantaneous Sag
0.5 30 cycles
Momentary Sag
30 cycles 3 sec.
Momentary Sag
30 cycles 3 sec.
Temporary Sag
3 sec 1 min.
Temporary Sag
3 sec 1 min.
Instantaneous Swell
0.5 30 cycles
Instantaneous Swell
0.5 30 cycles
Momentary Swell
30 cycles 3 sec.
Momentary Swell
30 cycles 3 sec.
Temporary Swell
3 sec 1 min.
Temporary Swell
3 sec 1 min.
Momentary Interruptions
0.5 30 cycles
Temporary Interruptions
30 cycles 3 sec.
PQ Definitions Revisited
Typical Duration
PQ Definitions Revisited
IEEE Categories
Std 1159-1995
IEEE Categories
Std 1159-1995
Typical Duration
Typical Duration
Sustained interruptions
> 1 min
Sustained interruptions
> 1 min
Under voltages
> 1 min
Under voltages
> 1 min
Over voltages
> 1 min
Over voltages
> 1 min
Voltage imbalance
Steady state
Waveform Distortion
3/5/2014
PQ Definitions Revisited
Long Duration Variations
SourcesInternal
ofSources
PQ Problems
Utility Sources
Lightning
PF Correction
Equipment
Faults
Switching
IEEE Categories
Std 1159-1995
Typical Duration
Sustained interruptions
> 1 min
Under voltages
> 1 min
Over voltages
> 1 min
Battery Chargers
Voltage imbalance
Steady state
Waveform Distortion
DC offset
Steady state
Harmonics
Steady state
Inter harmonics
Steady state
For Electric Utilities Control of Voltage and Prevention of Outages is Power Quality
Typical problems
Disturbance Type
Possible Causes
Typical problems
Disturbance Type
Possible Causes
Overheated neutral
Intermittent lock-ups
Frequency deviations
Steady-state
Shared neutrals
Improper or inadequate wiring
High source impedance
SCR/Rectifiers and notching
Harmonics
Overheated neutral
Intermittent lock-ups
Frequency deviations
Steady-state
Shared neutrals
Improper or inadequate wiring
High source impedance
SCR/Rectifiers and notching
Harmonics
Interruption
Garbled data
Random increase in harmonics levels
Utility faults
Inrush currents
Inadequate wiring
Typical problems
Disturbance Type
Possible Causes
Typical problems
Disturbance Type
Possible Causes
Overheated neutral
Intermittent lock-ups
Frequency deviations
Steady-state
Shared neutrals
Improper or inadequate wiring
High source impedance
SCR/Rectifiers and notching
Harmonics
Overheated neutral
Intermittent lock-ups
Frequency deviations
Steady-state
Shared neutrals
Improper or inadequate wiring
High source impedance
SCR/Rectifiers and notching
Harmonics
Utility faults
Inrush currents
Inadequate wiring
Interruption
Garbled data
Random increase in harmonics levels
Intermittent lock-ups
Lights flicker
Garbled data
Sags/Swell
Component failure
Dielectric breakdown
Lock-ups
Garbled data
Wavy CRTs
Impulses
EMI/RFI
Lightning
Load switching
Capacitor switching
Static discharge
Hand-held radios
Loose wiring/arcing
Interruption
Garbled data
Random increase in harmonics levels
Intermittent lock-ups
Lights flicker
Garbled data
Sags/Swell
Utility faults
Inrush currents
Inadequate wiring
3/5/2014
Disturbance Type
Possible Causes
Overheated neutral
Intermittent lock-ups
Frequency deviations
Steady-state
Shared neutrals
Improper or inadequate wiring
High source impedance
SCR/Rectifiers and notching
Harmonics
Interruption
Garbled data
Random increase in harmonics levels
Major PQ Problems
Outages,
6%
Spikes, 7%
Utility faults
Inrush currents
Inadequate wiring
Intermittent lock-ups
Lights flicker
Garbled data
Sags/Swell
Component failure
Dielectric breakdown
Lock-ups
Garbled data
Wavy CRTs
Impulses
EMI/RFI
Lightning
Load switching
Capacitor switching
Static discharge
Hand-held radios
Loose wiring/arcing
Harmonics
Swells,
Source: EPRI, 1994
Electronic loads
SCR/rectifier
Swells
Sags (Dips)
Textile Industry
Plastics Industry
Glass Industry
Process Industry
Semiconductors
$1k
$10k
$100k
$1M
Sags, 56%
31%
$10M
Source: EPRI The Economics of Custom Power, IEEE T&D Show 2003
Momentary Outages
create problems when
computers and clocks
reset, equipment stalls,
and work stops.
Category
Industrial
Semiconductor Manufacturing
Electronics
Automobile Manufacturing
Pharmaceutical
Glass
Rubber and Plastics
Petrochemical
Food Processing
Textile
Metal Fabrication
Mining
Paper
Printing(Newspapers)
Commercial
Hospitals, banks, civil service
Communications, information processing
Resturants, bars, hotels
Commercial shops
$20.0
$8.0
$5.0
$5.0
$4.0
$3.0
$3.0
$3.0
$2.0
$2.0
$2.0
$1.5
$1.0
$60.0
$12.0
$7.5
$50.0
$6.0
$4.5
$5.0
$5.0
$4.0
$4.0
$4.0
$2.5
$2.0
$2.0
$1.0
$0.5
$0.1
$3.0
$10.0
$1.0
$0.5
Source: EPRI The Economics of Custom Pow er, IEEE T&D 2003
3/5/2014
Transients
Interruptions
Sag/Under Voltage
Swell/Over Voltage
Waveform Distortion
Voltage Fluctuations
Frequency Variations
Be easy to use
Be Suitable for continuously
monitoring indoors and outdoors
Interface with standard PQ analysis
SoftwarePQDif format
Be fast enough to capture high speed
events that produce equipment
problems
Have enough storage to save the
waveforms you need
Have PQ analysis tools that produce
usable, actionable recommendations
Meter: EPM9650
ITI: Information Technology Industry Council (Computer & Business Equipment Manufacturers Association)
Equipment Interrupting
Voltage Sags as Recorded
ITI: Information Technology Industry Council (Computer & Business Equipment Manufacturers Association)
3/5/2014
Flicker Recording
Flicker Recording
Summary
Finally
Examinations
Accurate Measurement to
determine actual state
Diagnosis
Remedy
Remedial actions
Figure TF7-2: Cross-section of basic fabrication processes. The dashed line in each drawing indicates the original surface of
the wafer.
A specific sequence or process of chemical and mechanical modifications is performed on certain areas of the
wafer. Although complex processes employ a variety of techniques, a basic IC process will employ one of the following
three modifications to the wafer:
Implantation: Atoms or molecules are added to the silicon wafer, changing its electronic properties (Fig.TF7-2(a)).
Deposition: Materials such as metals, insulators, or semiconductors are added in thin layers (like painting) onto
the wafer (Fig. TF7-2(b)).
Etching: Material is removed from the wafer through chemical reactions or mechanical motion (Fig. TF7-2(c)).
Lithography
When building a multi-component IC, we need to perform different modifications to differents areas of the wafer. We
may want to etch some areas and add metal to others, for example. The method by which we define which areas will
be modified is known as lithography.
Lithography has evolved much over the last 40 years and will continue to do so. Modern lithography employs all
of the basic principles described below, but uses complex computation, specialized materials, and optical devices to
achieve the very high resolutions required to reach modern feature sizes.
At its heart, lithography is simply a stencil process. In an old-fashioned stencil process, when a plastic sheet with
cut-out letters or numbers is laid on a flat surface and painted, only the cutout areas would be painted. Once the stencil
is removed, the design left behind consists of only the painted areas with clean edges and a uniform surface. With that
in mind, consider Fig. TF7-3. Given a flat wafer, we first apply a thin coating of liquid polymer known as photoresist
(PR). This layer usually is several hundred nanometers thick and is applied by placing a drop in the center of the wafer
and then spinning the wafer very fast (1000 to 5000 rpm) so that the drop spreads out evenly over the surface. Once
coated, the PR is heated (usually between 60 to 100 C) in a process known as baking; this allows the PR to solidify
Dispense
Expose
Develop
slightly to a plastic-like consistency. Once baked and when exposed to ultraviolet (UV) light, the bonds that hold the
PR molecules together are chopped up; this makes it easy to wash away the UV-exposed areas (some varieties of
PR behave in exactly the opposite manner: UV light makes the PR very strong or cross-linked, but we will ignore that
technique here). In lithography, UV light is focused through a glass plate with patterns on it; this is known as exposure.
These patterns act as a light stencil for the PR. Wherever UV light hits the PR, that area subsequently can be washed
away in a process called development. After development, the PR film remains behind with holes in certain areas.
How is this helpful? Lets look at how the modifications presented earlier can be masked with PR to produce
patterned effects (Fig. TF7-4). In each case, we first use lithography to pattern areas onto the wafer (Fig. TF7-4(a))
then we perform one of our three processes (Fig. TF7-4(b)), and finally, we use a strong solvent such as acetone (nail
polish remover) to completely wash away the PR (Fig. TF7-4(c)). The PR allows us to implant, deposit, or etch only in
defined areas.
Fabricating a Diode
In Section 2-7, we discussed the functional performance of the diode as a circuit component. Here, we will examine
briefly how a diode is fabricated. Similar but more complex multi-step processes are used to make transistors and
integrated circuits. Conceptually, the simplest diode is made from two slabs of siliconeach implanted with different
atomspressed together such that they share a boundary (Fig. TF7-5). The n and p areas are pieces of silicon that
Lithography
Implantation
Deposition
Etch
p-type
silicon
p or n type
silicon
area
Metal film
Etched recess
silicon substrate
metal
n-type
silicon
metal
have been implanted with atoms (known as impurities) that increase or decrease the number of electrons capable of
flowing freely through the silicon. This changes the semiconducting properties of the silicon and creates an electrically
active boundary (called a junction) between the n and the p areas of silicon. If both the n and p pieces of silicon are
connected to metal wires, this two-terminal device exhibits the diode iv curve shown in Fig. 2-35(c).
Figure TF7-6 shows the process for making a single diode. Only one step needs further definition: oxidation. During
oxidation, the silicon wafer is heated to > 1000 C in an oxygen atmosphere. At this temperature, the oxygen atoms
and the silicon react and form a layer of SiO2 on the surface (this layer is often called an oxide layer). SiO2 is a type
of glass and is used as an insulator.
Wires are made by depositing metal layers on top of the device; these are called interconnects. Modern ICs have
6 to 7 such interconnect layers (Fig. TF7-7). These layers are used to make electrical connections between all of the
various components in the IC in the same way that macroscopic wires are used to link components on a breadboard.
n-type implant
a
f
Grow oxide
Remove PR
b
g
Lithography + etch oxide
Metal deposition
c
h
Remove PR
d
i
p-type implant
e
Complete diode
Metal
Metal
3/5/2014
Topics Covered
3/5/2014
Cellular Concepts
Cellular Concepts
10
Cellular Concepts
Cellular Concepts
11
12
Figure 20-1: The area served by a cellular telephone system is divided into small
areas called cells. Note: Cells are shown as ideal hexagons, but in reality they have
circular to other geometric shapes. These areas may overlap, and the cells may be of
different sizes.
2008 The McGraw-Hill Companies
3/5/2014
13
14
Frequency Allocation
The frequencies between 824 and 849 MHz are
reserved for the uplink transmissions from the cell
phone to the base station. These are also called the
reverse channels.
The frequencies between 869 and 894 MHz are the
downlink bands from base station to cell phone.
Two blocks of 60 MHz between 1850 and 1990 MHz
are referred to as the personal communications
systems (PCS) channels.
Figure 20-4: Additional U.S. cell phone spectrum. (a) 890 to 960 MHz and (b) 1850 to
1990 MHz are called the personal communication system PCS band.
2008 The McGraw-Hill Companies
15
16
Multiple Access
17
18
3/5/2014
19
20
21
22
Duplexing
Duplexing
23
24
3/5/2014
25
26
27
28
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Base Stations
The most complex and expensive part of any cellular
telephone system is the network of base stations that
carriers must have to make it all work.
Base stations consist of multiple receivers and
transmitters so that many calls can be handled on many
different channels simultaneously.
The most visible feature of a base station is its antenna
on a tower.
Base station antennas have become directional, which
helps to increase subscriber capacity with minimal cost.
41
Figure 20-27: Horizontal radiation and reception pattern of a typical cell site antenna.
2008 The McGraw-Hill Companies
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