IRFR/U1205

HEXFET

Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.027
I
D
= 44AU
Description
5/11/98
Parameter Max. Units
I
D
@ T
C
= 25C Continuous Drain Current, V
GS
@ 10V 44U
I
D
@ T
C
= 100C Continuous Drain Current, V
GS
@ 10V 31U A
I
DM
Pulsed Drain Current QW 160
P
D
@T
C
= 25C Power Dissipation 107 W
Linear Derating Factor 0.71 W/C
V
GS
Gate-to-Source Voltage 20 V
E
AS
Single Pulse Avalanche EnergyRW 210 mJ
I
AR
Avalanche CurrentQW 25 A
E
AR
Repetitive Avalanche EnergyQW 11 mJ
dv/dt Peak Diode Recovery dv/dt S 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
C
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
JC
Junction-to-Case 1.4
R
JA
Junction-to-Ambient (PCB mount) ** 50 C/W
R
JA
Junction-to-Ambient 110
Thermal Resistance
D-PAK
TO-252AA
I-PAK
TO-251AA
Ultra Low On-Resistance
Surface Mount (IRFR1205)
Straight Lead (IRFU1205)
Fast Switching
Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91318B
www.irf.com 1
IRFR/U1205
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 V V
GS
= 0V, I
D
= 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.055 V/C Reference to 25C, I
D
= 1mA
0.027 V
GS
= 10V, I
D
= 26A T
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance 17 S V
DS
= 25V, I
D
= 25AW
25
A
V
DS
= 55V, V
GS
= 0V
250 V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage -100 V
GS
= -20V
Q
g
Total Gate Charge 65 I
D
= 25A
Q
gs
Gate-to-Source Charge 12 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge 27 V
GS
= 10V, See Fig. 6 and 13 TW
t
d(on)
Turn-On Delay Time 7.3 V
DD
= 28V
t
r
Rise Time 69
ns
I
D
= 25A
t
d(off)
Turn-Off Delay Time 47 R
G
= 12
t
f
Fall Time 60 R
D
= 1.1, See Fig. 10 TW
Between lead,
6mm (0.25in.)
from package
and center of die contactV
C
iss
Input Capacitance 1300 V
GS
= 0V
C
oss
Output Capacitance 410 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5W
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance 7.5
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance 4.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)

showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) QW

p-n junction diode.
V
SD
Diode Forward Voltage 1.3 V T
J
= 25C, I
S
= 22A, V
GS
= 0V T
t
rr
Reverse Recovery Time 65 98 ns T
J
= 25C, I
F
=25A
Q
rr
Reverse RecoveryCharge 160 240 nC di/dt = 100A/s

TW
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
44U
160
Notes:
R V
DD
= 25V, starting T
J
= 25C, L = 470H
R
G
= 25, I
AS
= 25A. (See Figure 12)
Q Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
S I
SD
25A, di/dt 320A/s, V
DD
V
(BR)DSS
,
T
J
175C
V This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
W Uses IRFZ44N data and test conditions
U Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
T Pulse width 300s; duty cycle 2%.
IRFR/U1205
www.irf.com 3
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
tion
1
10
100
1000
0. 1 1 10 100
I



,

D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20s PULSE WIDTH
T = 25C C
A
4.5V
1
10
100
1000
0. 1 1 10 100
I



,

D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
D
V , Drain-t o-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
A
4.5V
20s PULSE WIDTH
T = 175C C
1
10
100
1000
4 5 6 7 8 9 10
T = 25 C
J
GS
V , Gate- t o- Sour ce Vol tag e ( V)
D
I



,

D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
A
V = 2 5V
2 0 s PULSE W IDTH
D S
T = 1 75 C
J
0. 0
0. 5
1. 0
1. 5
2. 0
2. 5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
J
T , J unct ion Temperat ur e ( C)
R











,


D
r
a
i
n
-
t
o
-
S
o
u
r
c
e

O
n

R
e
s
i
s
t
a
n
c
e
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
V = 10V
GS
A
I = 4 1A D
IRFR/U1205
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
500
1000
1500
2000
2500
1 10 100
C
,

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
DS
V , Drai n-to-Source Volt age (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
Ciss
Coss
Crss
0
4
8
12
16
20
0 10 20 30 40 50 60 70
Q , Total Gate Charge (nC)
G
V





,

G
a
t
e
-
t
o
-
S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
G
S
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
DS
DS
I = 25A
D
1
10
100
1000
0. 5 1. 0 1. 5 2. 0 2. 5 3. 0
T = 25C
J
V = 0V GS
V , Source-to-Drain Voltage (V)
I





,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
SD
S
D
A
T = 175C
J
1
10
100
1000
1 10 100
V , Drain-t o-Source Voltage (V)
DS
I



,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10 s
100 s
1ms
10ms
A
T = 25C
T = 175C
Single Pulse
C
J
IRFR/U1205
www.irf.com 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
(
Z








)
1
t
h
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I



,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)

C
D
LIMITED BY PACKAGE
IRFR/U1205
6 www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
5.0 V
Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3F
50K
.2F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01 t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
10V
0
100
200
300
400
500
25 50 75 100 125 150 175
J
E





,



S
i
n
g
l
e

P
u
l
s
e

A
v
a
l
a
n
c
h
e

E
n
e
r
g
y

(
m
J
)
A
S
I
TOP 10A
18A
BOTTOM 25A
A
Starting T , Junction Temperatur e ( C)
V = 25V
D
DD
IRFR/U1205
www.irf.com 7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+ -
-
-
Fig 14. For N-Channel HEXFETS
* V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
S
T
R
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
Q
*
IRFR/U1205
8 www.irf.com
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
TO-252AA (D-PARK)
Part Marking Information
6.7 3 ( .265 )
6.3 5 ( .250 )
- A -
4
1 2 3
6.22 (.2 45)
5.97 (.2 35)
- B -
3X
0.89 (.0 35)
0.64 (.0 25)
0.2 5 ( .0 10 ) M A M B
4 .57 ( .18 0)
2.2 8 ( .0 90 )
2X
1.14 (.0 45)
0.76 (.0 30)
1 .52 ( .06 0)
1 .15 ( .04 5)
1.0 2 ( .04 0)
1.6 4 ( .02 5)
5 .4 6 ( .21 5)
5 .2 1 ( .20 5)
1 .27 ( .0 50)
0 .88 ( .0 35)
2 .3 8 ( .09 4)
2 .1 9 ( .08 6)
1.14 ( .0 45)
0.89 ( .0 35)
0.5 8 ( .02 3)
0.4 6 ( .01 8)
6.45 (.2 45 )
5.68 (.2 24 )
0.51 (.0 20 )
MIN.
0 .58 ( .0 23)
0 .46 ( .0 18)
LE AD A SS IGN ME NT S
1 - GAT E
2 - D RA IN
3 - SOU R C E
4 - D RA IN
1 0.42 (.4 10 )
9 .4 0 ( .37 0)
N OTE S:
1 D IMEN S ION IN G & T OLE R AN C IN G PE R A N SI Y 14 .5M, 1 982 .
2 C ON T R OLLING D IM EN S ION : INC H .
3 C ON F OR MS T O J ED E C OU T LIN E TO- 25 2A A.
4 D IMEN S ION S S H OW N AR E B EF ORE SOL D ER D IP,
SOL D ER D IP M AX. +0 .16 ( .00 6) .
I NTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
EXAMPLE : THIS IS AN IRFR120
W ITH ASSEMBLY
LOT CODE 9U1P
FIRST PORTION
OF PART NUMBER
SECOND PORTI ON
OF PART NUMBER
120
IRFR
9U 1P
A
IRFR/U1205
www.irf.com 9
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
TO-251AA (I-PARK)
Part Marking Information
6.7 3 ( .265 )
6.3 5 ( .250 )
- A -
6 .22 ( .24 5)
5 .97 ( .23 5)
- B -
3X
0.8 9 ( .035 )
0.6 4 ( .025 )
0 .25 ( .01 0) M A M B
2 .28 ( .09 0)
1 .14 ( .0 45)
0 .76 ( .0 30)
5 .4 6 ( .21 5)
5 .2 1 ( .20 5)
1.2 7 ( .050 )
0.8 8 ( .035 )
2.38 (.0 94 )
2.19 (.0 86 )
1.14 ( .0 45 )
0.89 ( .0 35 )
0 .5 8 ( .02 3)
0 .4 6 ( .01 8)
LE AD A SS IGN ME NT S
1 - GAT E
2 - D RA IN
3 - SOU R C E
4 - D RA IN
N OTE S:
1 D IM EN S ION IN G & T OLE RA N C IN G PE R A N SI Y 14 .5M, 19 82 .
2 C ON T ROL LIN G D IM EN SION : IN C H .
3 C ON F OR MS TO J ED EC OU T LIN E T O- 25 2A A.
4 D IM EN S ION S S HOW N A R E B EF ORE SOL D ER D IP,
SOL DE R DIP MA X. +0.1 6 ( .00 6) .
9.6 5 ( .3 80 )
8.8 9 ( .3 50 )
2 X
3X
2.2 8 ( .09 0)
1.9 1 ( .07 5)
1 .52 ( .06 0)
1 .15 ( .04 5)
4
1 2 3
6 .45 ( .2 45)
5 .68 ( .2 24)
0.58 (.0 23 )
0.46 (.0 18 )
INTERNATIONAL
RECTI FIER
LOGO
ASSEMBLY
LOT CODE
FIRST PORTION
OF PART NUMBER
SECOND PORTION
OF PART NUMBER
120
9U 1P
EXAMPLE : THIS IS AN IRFU120
WITH ASSEMBLY
LOT CODE 9U1P
IRFU
IRFR/U1205
10 www.irf.com
Tape & Reel Information
TO-252AA
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice. 5/98
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.