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VDSS
RDS(on)
500
500
500
500
500
< 0.38
< 0.38
< 0.38
< 0.38
< 0.38
V
V
V
V
V
ID
14
14
14
14
14
A
A
A
A
A
Pw
150 W
35 W
150 W
150 W
150 W
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
3
1
TO-220
TO-220FP
3
2
1
TO-247
3
1
23
I2PAK
D2PAK
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP14NK50Z
P14NK50Z
TO-220
TUBE
STP14NK50ZFP
P14NK50ZFP
TO-220FP
TUBE
STB14NK50ZT4
B14NK50Z
D2PAK
STB14NK50Z-1
B14NK50Z
I2PAK
TUBE
STW14NK50Z
W14NK50Z
TO-247
TUBE
March 2003
1/14
Parameter
Value
STP14NK50Z
STB14NK50Z/-1
VDS
VDGR
VGS
Unit
STP14NK50ZFP
STW14NK50Z
500
500
30
ID
14
14 (*)
14
ID
7.6
7.6 (*)
7.6
48
48 (*)
48
150
35
150
Derating Factor
1.20
0.28
1.20
W/C
IDM ( )
PTOT
VESD(G-S)
dv/dt (1)
VISO
Tj
Tstg
4000
4.5
V/ns
2500
-55 to 150
THERMAL DATA
TO-220
I2PAK
Rthj-case
D2PAK
TO-247
3.6
0.83
C/W
50
C/W
0.83
Rthj-pcb
60
Rthj-amb
62.5
Tl
TO-220FP
C/W
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
EAS
Max Value
Unit
12
400
mJ
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs= 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
2/14
Parameter
Test Conditions
Min.
Typ.
Max.
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
IDSS
1
50
A
A
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = 20V
10
VGS(th)
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 6 A
V(BR)DSS
500
Unit
3.75
4.5
0.34
0.38
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Test Conditions
Min.
VDS = 8 V, ID = 6 A
VDS = 25V, f = 1 MHz, VGS = 0
12
2000
238
55
pF
pF
pF
150
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 250 V, ID = 6 A
RG = 4.7 VGS = 10 V
(Resistive Load see, Figure 3)
24
16
ns
ns
Qg
Qgs
Qgd
VDD = 400V, ID = 12 A,
VGS = 10V
69
12
31
92
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
td(off)
tf
VDD = 250 V, ID = 6 A
RG = 4.7 VGS = 10 V
(Resistive Load see, Figure 3)
54
12
ns
ns
tr(Voff)
tf
tc
VDD = 400V, ID = 12 A,
RG = 4.7, VGS = 10V
(Inductive Load see, Figure 5)
9.5
9
20
ns
ns
ns
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 12 A, VGS = 0
trr
Qrr
IRRM
Min.
Typ.
470
3.1
13.2
Max.
Unit
12
48
A
A
1.6
V
ns
C
A
3/14
4/14
Transfer Characteristics
Transconductance
Capacitance Variations
5/14
6/14
7/14
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
D1
0.107
1.27
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
L4
H2
G1
F1
L2
F2
Dia.
L5
L9
L7
L6
8/14
L4
P011C
DIM.
MIN.
4.4
inch
TYP
MAX.
MIN.
4.6
0.173
TYP.
0.181
MAX.
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.7
0.017
0.027
0.75
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
10
10.4
0.393
L2
0.409
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9.3
0.354
0.366
3.2
0.118
0.126
L3
L3
L6
F2
G1
F1
L7
L2
L5
1 2 3
L4
9/14
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
8.95
9.35
0.352
0.368
D1
E
0.315
10
E1
10.4
0.393
8.5
0.334
4.88
5.28
0.192
0.208
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
2.4
3.2
0.094
0.126
0.015
V2
0.4
10/14
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
8.95
9.35
0.352
0.368
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
B2
C2
A1
L1
L2
L
P011P5/E
11/14
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
0.19
0.20
4.85
5.15
2.20
2.60
0.08
0.10
0.40
0.80
0.015
0.03
1.40
0.04
0.05
F1
0.11
F2
0.07
F3
2.40
0.07
0.09
F4
3.40
0.11
0.13
10.90
0.43
15.45
15.75
0.60
0.62
19.85
20.15
0.78
0.79
L1
3.70
4.30
0.14
L2
L3
18.50
14.20
0.17
0.72
14.80
0.56
0.58
L4
34.60
1.36
L5
5.50
0.21
0.07
0.11
V2
60
60
Dia
12/14
TYP
3.55
3.65
0.14
0.143
mm
MIN.
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
MAX.
MIN.
330
1.5
12.8
20.2
24.4
100
inch
MAX.
12.992
0.059
13.2
0.504 0.520
0795
26.4
0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
1.65
1.85
0.065 0.073
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
50
1.574
0.25
23.7
24.3
0.933 0.956
* on sales type
13/14
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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