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SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors

2N3905
2N3906*

PNP Silicon

*Motorola Preferred Device

COLLECTOR
3
2
BASE
1
EMITTER
1
2

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector Emitter Voltage

VCEO

40

Vdc

Collector Base Voltage

VCBO

40

Vdc

Emitter Base Voltage

VEBO

5.0

Vdc

Collector Current Continuous

IC

200

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Power Dissipation @ TA = 60C

PD

250

mW

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

Watts
mW/C

TJ, Tstg

55 to +150

Operating and Storage Junction

Temperature Range

CASE 2904, STYLE 1

TO92 (TO226AA)

THERMAL CHARACTERISTICS(1)
Symbol

Max

Unit

Thermal Resistance, Junction to

Ambient

Characteristic

RqJA

200

C/W

Thermal Resistance, Junction to Case

RqJC

83.3

C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector Emitter Breakdown Voltage (2)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

Vdc

Collector Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

40

Vdc

Emitter Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

IBL

50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

ICEX

50

nAdc

OFF CHARACTERISTICS

1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width
300 ms; Duty Cycle
2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

2N3905 2N3906
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic

Symbol

Min

Max

2N3905
2N3906

30
60

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

2N3905
2N3906

40
80

(IC = 10 mAdc, VCE = 1.0 Vdc)

2N3905
2N3906

50
100

150
300

(IC = 50 mAdc, VCE = 1.0 Vdc)

2N3905
2N3906

30
60

(IC = 100 mAdc, VCE = 1.0 Vdc)

2N3905
2N3906

15
30

0.25
0.4

0.65

0.85
0.95

200
250

Unit

ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)

hFE

Collector Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc

VCE(sat)

Base Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

Vdc

Vdc

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT
2N3905
2N3906

MHz

Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

4.5

pF

Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

10.0

pF

0.5
2.0

8.0
12

0.1
0.1

5.0
10

50
100

200
400

1.0
3.0

40
60

5.0
4.0

td

35

ns

tr

35

ns

2N3905
2N3906

ts

200
225

ns

2N3905
2N3906

tf

60
75

ns

Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)

hie
2N3905
2N3906

X 10 4

hre
2N3905
2N3906
hfe
2N3905
2N3906

mmhos

hoe
2N3905
2N3906
NF
2N3905
2N3906

dB

SWITCHING CHARACTERISTICS
Delay Time
Rise Time

((VCC = 3.0 Vdc,, VBE = 0.5 Vdc,,

IC = 10 mAdc, IB1 = 1.0 mAdc)

Storage Time

Fall Time

1. Pulse Test: Pulse Width

(VCC = 3.0 Vdc, IC = 10 mAdc,

IB1 = IB2 = 1.0 mAd

v 300 ms; Duty Cycle v 2.0%.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3905 2N3906
3V

3V
< 1 ns

+9.1 V
275

275

< 1 ns
10 k

+0.5 V

10 k
0
CS < 4 pF*

10.6 V

300 ns
DUTY CYCLE = 2%

CS < 4 pF*

1N916
10 < t1 < 500 ms
DUTY CYCLE = 2%

t1

10.9 V

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

10

5000

7.0

3000
2000
Cobo

5.0

Q, CHARGE (pC)

CAPACITANCE (pF)

TJ = 25C
TJ = 125C

Cibo
3.0
2.0

VCC = 40 V
IC/IB = 10

1000
700
500
300
200

QT
QA

1.0
0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)

100
70
50

20 30 40

1.0

2.0 3.0

Figure 3. Capacitance

5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)

200

Figure 4. Charge Data

500

500
IC/IB = 10

300
200

VCC = 40 V
IB1 = IB2

300
200

tr @ VCC = 3.0 V
15 V

30
20

t f , FALL TIME (ns)

TIME (ns)

IC/IB = 20
100
70
50

100
70
50
30
20

IC/IB = 10

40 V
10
7
5

2.0 V
td @ VOB = 0 V
1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

10
7
5

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn On Time

Figure 6. Fall Time

Motorola SmallSignal Transistors, FETs and Diodes Device Data

200

2N3905 2N3906
TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
12

SOURCE RESISTANCE = 200 W

IC = 1.0 mA

4.0

f = 1.0 kHz

SOURCE RESISTANCE = 200 W

IC = 0.5 mA

3.0

SOURCE RESISTANCE = 2.0 k

IC = 50 mA

2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA

1.0

0
0.1

0.2

0.4

IC = 1.0 mA

10
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

5.0

IC = 0.5 mA
8
6
IC = 50 mA

IC = 100 mA

1.0 2.0 4.0

10
f, FREQUENCY (kHz)

20

40

100

0.1

0.2

0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)

Figure 7.

40

100

Figure 8.

h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
hoe, OUTPUT ADMITTANCE (m mhos)

h fe , DC CURRENT GAIN

300

200

100
70
50

70
50
30
20

10
7

30

0.1

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

0.1

0.2

Figure 9. Current Gain

10
h re , VOLTAGE FEEDBACK RATIO (X 10 4 )

h ie , INPUT IMPEDANCE (k OHMS)

10
7.0
5.0
3.0
2.0
1.0
0.7
0.5

0.1

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)

Figure 11. Input Impedance

5.0 7.0 10

Figure 10. Output Admittance

20

0.3
0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

7.0
5.0
3.0
2.0

1.0
0.7
0.5

0.1

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 12. Voltage Feedback Ratio

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3905 2N3906

h FE, DC CURRENT GAIN (NORMALIZED)

TYPICAL STATIC CHARACTERISTICS

2.0
TJ = +125C

VCE = 1.0 V

+25C

1.0
0.7

55C

0.5
0.3
0.2

0.1
0.1

0.2

0.3

0.5

0.7

1.0

2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)

20

30

70

50

100

200

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

Figure 13. DC Current Gain

1.0
TJ = 25C
0.8

IC = 1.0 mA

10 mA

30 mA

100 mA

0.6

0.4

0.2

0
0.01

0.02

0.03

0.05

0.07

0.1

0.2
0.3
0.5
IB, BASE CURRENT (mA)

0.7

1.0

2.0

3.0

5.0

7.0

10

Figure 14. Collector Saturation Region

TJ = 25C

V, VOLTAGE (VOLTS)

0.8

q V , TEMPERATURE COEFFICIENTS (mV/ C)

1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V

0.6

0.4
VCE(sat) @ IC/IB = 10

0.2

1.0

2.0

50
5.0
10
20
IC, COLLECTOR CURRENT (mA)

100

200

Figure 15. ON Voltages

Motorola SmallSignal Transistors, FETs and Diodes Device Data

1.0
0.5

qVC FOR VCE(sat)

+25C TO +125C

55C TO +25C

0.5
+25C TO +125C
1.0
55C TO +25C

qVB FOR VBE(sat)

1.5
2.0

20

40

60
80 100 120 140
IC, COLLECTOR CURRENT (mA)

160

180 200

Figure 16. Temperature Coefficients

2N3905 2N3906
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R
P
L

SEATING
PLANE

K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V

D
J

X X
G
H
V

SECTION XX

N
N

CASE 02904
(TO226AA)
ISSUE AD

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals
must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of
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2N3905/D
Motorola SmallSignal Transistors, FETs and Diodes Device
Data