Ece Formula Sheet Final

One stop series for
GATE/IES/PSU-2014

(Formula Sheet for ECE Dept.,)

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Formula Sheet
(ECE Department)

Index Page. No.

1. Mathematics --- --- 1 to 9
2. EDC & Analog Electronics --- 10 to 18
3. Digital Electronics --- --- 19 to 21
4. Microprocessors --- --- 22 to 25
5. Signals & Systems --- --- 26 to 31
6. Control Systems --- --- 32 to 34
7. Communications --- --- 35 to 38
8. Electro-Magnetic Theory --- 39 to 45

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Institute of Engineering Studies (IES,Bangalore) Mathematics Formula Sheet
MatheMatics

Matrix :-
If |A| =0 Singular matrix ; |A| 0 Non singular matrix
Scalar Matrix is a Diagonal matrix with all diagonal elements are equal
Unitary Matrix is a scalar matrix with Diagonal element as 1 (A
Q
=(A
)
T
= A
1
)
If the product of 2 matrices are zero matrix then at least one of the matrix has det zero
Orthogonal Matrix if AA
T
= A
T
.A =I A
T
=A
1

A =A
T
Symmetric
A =- A
T
Skew symmetric

Properties :- (if A & B are symmetrical )
A +B symmetric
KA is symmetric
AB +BA symmetric
AB is symmetric iff AB =BA
For any A A +A
T
symmetric ; A - A
T
skew symmetric.
Diagonal elements of skew symmetric matrix are zero
If A skew symmetric A
2n
symmetric matrix ; A
2n1
skew symmetric
If A is null matrix then Rank of A =0.

Consistency of Equations :-
r(A, B) r(A) is consistent
r(A, B) =r(A) consistent &
if r(A) =no. of unknowns then unique solution
r(A) <no. of unknowns then solutions .

Hermition , Skew Hermition , Unitary & Orthogonal Matrices :-

A
T
=A
then Hermition
A
T
=A
then Hermition
Diagonal elements of Skew Hermition Matrix must be purely imaginary or zero
Diagonal elements of Hermition matrix always real .
A real Hermition matrix is a symmetric matrix.
|KA| =K
n
|A|

Eigen Values & Vectors :-
Char. Equation |A I| =0.
Roots of characteristic equation are called eigen values . Each eigen value corresponds to non zero
solution X such that (A I)X =0 . X is called Eigen vector .
Sum of Eigen values is sum of Diagonal elements (trace)
Product of Eigen values equal to Determinent of Matrix .
Eigen values of A
T
& A are same
is Eigen value of A then 1/ A
1
&
|A|
is Eigen value of adj A.

1
,
2

n
are Eigen values of A then

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Pg.No. 1 of 45

KA K
1
, K
2
..K
n

A
m

1
m
,
2
m
..
n
m
.

A +KI
1
+k ,
2
+k , ..
n
+k
(A KI)
2
(
1
k)
2
, (
n
k)
2

Eigen values of orthogonal matrix have absolute value of 1 .
Eigen values of symmetric matrix also purely real .
Eigen values of skew symmetric matrix are purely imaginary or zero .

1
,
2
,
n
distinct eigen values of A then corresponding eigen vectors X
1
, X
2
, .. X
n
for
linearly independent set .
adj (adj A) = |A|
n2
; | adj (adj A) | =|A|
(n1)
2

Complex Algebra :-

Cauchy Rieman equations

=
1
r

=
1
r

Neccessary & Sufficient Conditions for f(z) to be analytic

f(z)/(Z a)
n+1
c
dz =
2i
n!
[ f
n
(a) ] if f(z) is analytic in region C & Z =a is single point
f(z) =f(z
0
) +f
(z
0
)
(zz
0
)
1!
+ f
(z
0
)
(zz
0
)
2
2!
+ + f
n
(z
0
)
(zz
0
)
n
n!
+. Taylor Series

if z
0
=0 then it is called Mclauren Series f(z) = a
n
(z z
0
)
n
0
; when a
n
=
f
n
(z
0
)
n !

If f(z) analytic in closed curve C except @ finite no. of poles then

f(z)dz
c
=2i (sum of Residues @ singular points within C )

Res f(a) =lim
( ()

=(a) /
(a)

= lim
1
(1)!

1
((Z a)
n
f(z) )
Calculus :-
Rolles theorem :-
If f(x) is
(a) Continuous in [a, b]


Pg.No. 2 of 45
(b) Differentiable in (a, b)
(c) f(a) =f(b) then there exists at least one value C (a, b) such that f
(c) =0 .

Langranges Mean Value Theorem :-
If f(x) is continuous in [a, b] and differentiable in (a, b) then there exists atleast one value C in (a, b)
such that f
(c) =
f(b)f(a)
ba

Cauchys Mean value theorem :-
If f(x) & g(x) are two function such that
(a) f(x) & g(x) continuous in [a, b]
(b) f(x) & g(x) differentiable in (a, b)
(c) g
(x) 0 x in (a, b)
Then there exist atleast one value C in (a, b) such that
f
(c) / g
(c) =
f(b)f(a)
g(b)g(a)

Properties of Definite integrals :-
a <c <b f(x). dx
b
a
= f(x). dx
c
a
+ f(x). dx
b
c

f(x)dx
a
0
= f(a x)dx
a
0

f(x). dx
a
a
=2 f(x)dx
a
0
f(x) is even

= 0 f(x) is odd

f(x). dx
a
0
=2 f(x)dx
a
0
if f(x) = f(2a- x)

= 0 if f(x) =- f(2a x)

f(x). dx
na
0
=n f(x)dx
a
0
if f(x) = f(x +a)

f(x). dx
b
a
= f(a +b x). dx
b
a


Pg.No. 3 of 45
x f(x). dx
a
0
=
a
2
f(x). dx
a
0
if f(a - x) = f(x)

sin
n
x
/2
0
= cos
n
x
/2
0
=
(n1)(n3)(n5)2
n (n2)(n4).3
if n odd

=
(n1)(n3)1
n (n2)(n4).2
.
2
if n even

sin
m
x
/2
0
. cos
n
x . dx =
{(m1)(m3).(m5)(2 or 1)} {(n1)(n3).(2 or 1)}.K
(m+n) (m+n2)(m+n4)2 or 1

Where K = / 2 when both m & n are even otherwise k =1
Maxima & Minima :-
A function f(x) has maximum @ x =a if f
(a) =0 and f
(a) <0
A function f(x) has minimum @ x =a if f
(a) =0 and f
(a) >0
Constrained Maximum or Minimum :-
To find maximum or minimum of u =f(x, y, z) where x, y, z are connected by (x, y, z) =0
Working Rule :-
(i) Write F(x, y, z) =f(x, y, z) + (x, y, z)
(ii) Obtain F
x
=0, F
y
=0 , F
z
=0
(ii) Solve above equations along with =0 to get stationary point .
Laplace Transform :-
L
() = s
n
f(s) - s
n1
f(0) - s
n2
f
(0) f
n1
(0)

L { t
n
f(t) } = (1)
n

d
n
ds
n
f(s)

f(t)
t
f(s)
s
ds

f(u)
t
0
du f(s) / s .

Inverse Transforms :-


Pg.No. 4 of 45

s
(s
2
+a
2
)
2
=
1
2a
t sin at

s
2
(s
2
+a
2
)
2
=
1
2a
[ sin at +at cos at]

1
(s
2
+a
2
)
2
=
1
2a
3
[ sin at - at cos at]

s
s
2
a
2
=Cos hat

a
s
2
a
2
=Sin hat

Laplace Transform of periodic function : L { f(t) } =
e
st
f(t)dt
T
0
1e
sT

Numerical Methods :-
Bisection Method :-
(1) Take two values of x
1
& x
2
such that f(x
1
) is +ve & f(x
2
) is ve then x
3
=
x
1
+x
2
2
find f(x
3
) if f(x
3
)
+ve then root lies between x
3
& x
2
otherwise it lies between x
1
& x
3
.
Regular falsi method :-
Same as bisection except x
2
=x
0
-
x
1
x
0
f(x
1
)f(x
0
)
f(x
0
)
Newton Raphson Method :-
x
n+1
=x
n

f(x
n
)
f
(x
n
)

Pi cards Method :-
y
n+1
=y
0
+ f(x, y
n
x
x
0
)
dy
dx
=f(x, y)
Taylor Series method :-
dy
dx
=f(x, y) y =y
0
+(x- x
0
) (y
)
0
+
(x x
0
)
2
2!
(y)
0
+.
(x x
0
)
n
n!
(y)
0
n

Eulers method :-
y
1
= y
0
+h f(x
0
, y
0
)
dy
dx
=f(x, y
y
1
(1)
= y
0
+
h
2
[f(x
0
, y
0
) + f(x
0
+h, y
1
)


Pg.No. 5 of 45
y
1
(2)
= y
0
+
h
2
[f(x
0
, y
0
) + f(x
0+h
, y
1
(1)
) ]
:
:
Calculate till two consecutive value of y agree
y
2
= y
1
+h f(x
0
+h, y
1
)
y
2
(1)
= y
0
+
h
2
[f(x
0
+h, y
1
) + f(x
0
+2h, y
2
)

Runges Method :-
k
1
=h f(x
0
, y
0
)
k
2
=h f( x
0
+
h
2
, y
0
+
k
1
2
) finally compute K =
1
6
(K
1
+4K
2
+K
3
)
k
=h f(x
0
+h , y
0
+k
1
)
k
3
=h ( f (x
0
+h , y
0
+k
))

Runge Kutta Method :-
k
1
=h f(x
0
, y
0
)
k
2
=h f( x
0
+
h
2
, y
0
+
k
1
2
) finally compute K =
1
6
(K
1
+2K
2
+2K
3
+K
4
)
k
3
=h f(x
0
+
h
2
, y
0
+
k
2
2
) approximation vale y
1
=y
0
+K .
k
3
=h f (x
0
+h , y
0
+k
3
)
Trapezoidal Rule :-
f(x). dx
x
0
+nh
x
0
=
h
2
[ ( y
0
+y
n
) +2 (y
1
+y
2
+. y
n1
)]
f(x) takes values y
0
, y
1
..
@ x
0
, x
1
, x
2
..
Simpsons one third rule :-


Pg.No. 6 of 45
f(x). dx
x
0
+nh
x
0
=
h
3
[ ( y
0
+y
n
) +4 (y
1
+y
3
+. y
n1
) +2 (y
2
+y
4
+. + y
n2
)]
Simpson three eighth rule :-
f(x). dx
x
0
+nh
x
0
=
3h
8
[ ( y
0
+y
n
) +3 (y
1
+y
2
+y
4
+y
5
+. y
n1
)+2 (y
3
+y
6
+. + y
n3
) ]
Differential Equations :-
Variable & Seperable :-
General form is f(y) dy =(x) dx
Sol: f(y) dy =(x) dx +C .

Homo generous equations :-
General form
dy
dx
=
f(x,y)
(x,y)
f(x, y) & (x, y) Homogenous of same degree
Sol : Put y =Vx
dy
dx
=V +x
dv
dx
& solve
Reducible to Homogeneous :-
General form
dy
dx
=
ax+by+c
a
x+b
y+c

(i)
a
a

b
b

Sol : Put x =X +h y =Y +k

dy
dx
=
ax+by+(ah+bk+c)
a
x+b
y+(a
h+b
k+c
)
Choose h, k such that
dy
dx
becomes homogenous then solve by Y =VX

(ii)
a
a
=
b
b

Sol : Let
a
a
=
b
b
=
1
m

dy
dx
=
ax+by+c
m(ax+by)+c

Put ax +by =t
dy
dx
=
/b


Pg.No. 7 of 45
Then by variable & seperable solve the equation .
Libnetz Linear equation :-
General form
dy
dx
+py =Q where P & Q are functions of x
I.F =e
p.dx

Sol : y(I.F) = Q. (I. F) dx +C .
Exact Differential Equations :-
General form M dx +N dy =0 M f (x, y)
N f(x, y)
If
M
y
=
N
x
then

Sol : M. dx +(terms of N containing x ) dy =C
( y constant )
Rules for finding Particular Integral :-

1
f(D)
e
ax
=
1
f(a)
e
ax

= x
1
f
(a)
e
ax
if f (a) =0
= x
2

1
f
(a)
e
ax
if f
(a) =0

1
f(b
2
)
sin (ax +b) =
1
f(a
2
)
sin (ax +b) f(- a
2
) 0
= x
1
f
(a
2
)
sin (ax +b) f(- a
2
) = 0 Same applicable for cos (ax +b)
=x
2

1
f
(a
2
)
sin (ax +b)

1
f(D)
x
m
= [f(D)]
y
x
m

1
f(D)
e
ax
f(x) = e
ax

1
f(D+a)
f(x)
Vector Calculus :-


Pg.No. 8 of 45
Greens Theorem :-
( dx + dy)
C
=
y
dx dy
This theorem converts a line integral around a closed curve into Double integral which is special case of
Stokes theorem .
Series expansion :-
Taylor Series :-
f(x) = f(a) +
f
(a)
1 !
(x-a) +
f
(a)
2 !
(x a)
2
++
f
n
(a)
n !
(x a)
n

f(x) = f(0) +
f
(0)
1 !
x +
f
(0)
2 !
x
2
++
f
n
(0)
n !
x
n
+. (mc lower series )
(1 +x)
n
=1+nx +
n(n1)
2
x
2
+ | nx| <1
e
x
= 1 +x +
x
2
2 !
+..
Sin x =x -
x
3
3 !
+
x
5
5!
- ..
Cos x = 1 -
x
2
2 !
+
x
4
4 !
- ..


Pg.No. 9 of 45
Institute of Engineering Studies (IES,Bangalore) EDC & Analog Electronics Formula Sheet
EDC & Analog

Energy gap
G/si
=1.21 3.6 10
4
.T ev
G/Ge
=0.785 2.23 10
4
.T ev
Energy gap depending on temperature
E
F
=E
C
- KT ln
=E
v
+KT ln

No. of electrons n =N
c
e
(E
c
E
f
)/RT
(KT in ev)
No. of holes p =N
v
e
(E
f
E
v
)/RT

Mass action law n
p
=n
i
2
=N
c
N
v
e
EG/KT

Drift velocity
d
=E (for si
d
10
7
cm/sec)
Hall voltage
H
=
B.I
w
e
. Hall coefficient R
H
=1/ . charge density =qN
0
=ne
Conductivity = ; =R
H
.
Max value of electric field @ junction E
0
= -
q
si
N
d
. n
n0
= -
q
si
N
A
. n
p0
.
Charge storage @ junction Q
+
= - Q
= qA x
n0
N
D
= qA x
p0
N
A

EDC

Diffusion current densities J
p
=- q D
p

dp
dx
J
n
=- q D
n

dn
dx

Drift current Densities =q(p
p
+n
n
)E

p
,
n
decrease with increasing doping concentration .

D
n
n
=
D
p
p
=KT/q 25 mv @ 300 K
Carrier concentration in N-type silicon n
n0
=N
D
; p
n0
=n
i
2
/ N
D

Carrier concentration in P-type silicon p
p0
=N
A
; n
p0
=n
i
2
/ N
A

J unction built in voltage V
0
=V
T
ln
2

Width of Depletion region W
dep
= x
p
+x
n
=
2
s
q

1
N
A
+
1
N
D
(V
0
+V
R
)
*
2
= 12.93

x
n
x
p
=
N
A
N
D

Charge stored in depletion region q
J
=
q.N
A
N
D
N
A
+N
D
. A . W
dep

Depletion capacitance C
j
=
s
A
W
dep
; C
j0
=
s
A
W
dep
/ V
R
=0

C
j
=C
j0
/1 +
V
R
V
0
m

C
j
=2C
j0
(for forward Bias)
Forward current I =I
p
+I
n
; I
p
=Aq n
i
2

D
p
L
p
N
D

/
1
I
n
=Aq n
i
2

D
n
L
n
N
A

/
1
Saturation Current I
s
=Aq n
i
2

D
p
L
p
N
D
+
D
n
L
n
N
A

Minority carrier life time
p
=L
p
2
/ D
p
;
n
=L
n
2
/ D
n


Pg.No. 10 of 45
Minority carrier charge storage Q
p
=
p
I
p
, Q
n
=
p
I
n

Q =Q
p
+Q
n
=
T
I
T
=mean transist time
Diffusion capacitance C
d
=

I =.g C
d
I.
carrier life time , g =conductance =I /

I
02
=2
(T
2
T
1
)/10
I
01

J unction Barrier Voltage V
j
=V
B
=V
r
(open condition)
=V
r
- V (forward Bias)
= V
r
+V (Reverse Bias)
Probability of filled states above E f(E) =
1
1+e
(EE
f
)/KT

Drift velocity of e

d
10
7
cm/sec
Poisson equation
d
2
V
dx
2
=
=
nq

dv
dx
=E =
nqx

Transistor :-
I
E
=I
DE
+I
nE

I
C
=I
Co
I
E
Active region
I
C
= I
E
+I
Co
(1- e
V
C
/V
T
)

Common Emitter :-
I
C
=(1+) I
Co
+I
B
=
1

I
CEO
=
I
Co
1
Collector current when base open
I
CBO
Collector current when I
E
=0 I
CBO
>I
Co
.
V
BE,sat
or V
BC,sat
- 2.5 mv /
0
C ; V
CE,sat

V
BE,sat
10
=- 0.25 mv /
0
C
Large signal Current gain =
I
C
I
CBo
I
B
+ I
CBo

D.C current gain
dc
=
I
C
I
B
=h
FE

(
dc
=h
FE
) when I
B
>I
CBo

Small signal current gain
=
I
C
I
R
V
CE
= h
fe
=
h
FE
1(I
CBo
+ I
B
)
h
FE
I
C

Over drive factor =
active
forced
under saturation
I
C sat
=
forced
I
B sat

Conversion formula :-
CC CE
h
ic
=h
ie
; h
rc
=1 ; h
fc
=- (1+h
fe
) ; h
oc
=h
oe

CB CE
h
ib
=
h
ie
1+h
fe
; h
ib
=
h
ie
h
oe
1+h
fe
- h
re
; h
fb
=
h
fe
1+h
fe
; h
ob
=
h
oe
1+h
fe

CE parameters in terms of CB can be obtained by interchanging B & E .

Specifications of An amplifier :-


Pg.No. 11 of 45
A
I
=
h
f
1+h
0
Z
L
Z
i
=h
i
+h
r
A
I
Z
L
A
vs
=
A
v
.Z
i
Z
i
+R
s
=
A
I
.Z
L
Z
i
+R
s
=
A
I
s
.Z
L
R
s

A
V
=
A
I
Z
L
Z
i
Y
0
=h
o
-
h
f
h
r
h
i
+ R
s
A
Is
=
A
v
.R
s
Z
i
+R
s
=
A
vs
.R
s
Z
L

Choice of Transistor Configuration :-
For intermediate stages CC cant be used as A
V
<1
CE can be used as intermediate stage
CC can be used as o/p stage as it has low o/p impedance
CC/CB can be used as i/p stage because of i/p considerations.

Stability & Biasing :- ( Should be as min as possible)

For S =
I
C
I
Co
V
B0,
S
=
I
C
V
BE
I
C0,
S
=
I
C
V
BE,I
Co

I
C
=S. I
Co
+S
V
BE
+S

For fixed bias S =
1+
1
dI
B
dI
C
=1 +

Collector to Base bias S =
1+
1+
R
C
R
C
+R
B
0 <s <1+ =
1+
1+
R
C
+ R
E
R
C
+ R
E
+ R
B

Self bias S =
1+
1+
R
E
R
E
+R
th
1+
R
th
R
e
R
E
> 10 R
2

R
1
=
V
cc
R
th
V
th
; R
2
=
V
cc
R
th
V
cc
V
th

For thermal stability [ V
cc
- 2I
c
(R
C
+R
E
)] [ 0.07 I
co
. S] < 1/ ; V
CE
<
V
CC
2

Hybrid pi()- Model :-

g
m
=|I
C
| / V
T

r
b
e
= h
fe
/ g
m

r
b
b
=h
ie
- r
b
e

r
b
c
=r
b
e
/ h
re

g
ce
=h
oe
- (1+h
fe
) g
b
c

For CE :-
f
=
g
b
e
2(C
e
+ C
c
)
=
g
m
h
fe
2(C
e
+ C
c
)


Pg.No. 12 of 45
f
T
=h
fe
f
; f
H
=
1
2 r
b
e
C
=
g
b
e
2C
C =C
e
+C
c
(1 +g
m
R
L
)
f
T
= S.C current gain Bandwidth product
f
H
= Upper cutoff frequency

For CC :-
f
H
=
1+g
m
R
L
2C
L
R
L

g
m
2C
L
=
f
T C
e
C
L
=
g
m
+ g
b
e
2(C
L
+ C
e
)

For CB:-
f
=
1+ h
fe
2r
b
e
(C
C
+ C
e
)
=(1 + h
fe
) f
= (1 + ) f

f
T
=
1+
f
>f
T
>f

Ebress moll model :-
I
C
=-
N
I
E
+I
Co
(1- e
V/V
T
)

I
E
=-
I
I
C
+I
Eo
(1- e
V/V
T
)

I
I
Co
=
N
I
Eo

Multistage Amplifiers :-
f
H
* =f
H
2
1/n
1 ; f
L
=
f
L
2
1/n
1

Rise time t
r
=
0.35
f
H
=
0.35
B.W

t
r
=1.1 t
r1
2
+t
r2
2
+

f
L
=1.1 f
L
1
2
+f
L
2
2
+

1
f
H
=1.1
1
f
H
1
2
+
1
f
H
2
2
+

Differential Amplifier :-

Z
i
=h
ie
+ (1 +h
fe
) 2R
e
=2 h
fe
R
e
2R
e

g
m
=
0
|I
EE
|
4V
T
=
I
C
4V
T
=g
m
of BJ T/4
0
DC value of

CMRR =
h
fe
R
e
R
s
+h
ie
; R
e
, Z
i
, A
d
& CMRR

Darlington Pair :-


Pg.No. 13 of 45
A
I
=(1 +
1
) (1 +
2
) ; A
v
1 ( <1)

Z
i
=
(1+h
fe
)
2
R
e2
1+h
fe
h
oc
R
e2

[ if Q
1
& Q
2
have same type ] =A
I
R
e2

R
o
=
R
s
(1+h
fe
)
2
+
2 h
ie
1+h
fe

g
m
=(1 +
2
) g
m1

Tuned Amplifiers : (Parallel Resonant ckts used ) :

f
0
=
1
2LC
Q Q factor of resonant ckt which is very high

B.W =f
0
/Q

f
L
=f
0
-
BW
2

f
H
=f
0
+
BW
2

For double tuned amplifier 2 tank circuits with same f
0
used . f
0
=f
L
f
H
.

MOSFET (Enhancement) [ Channel will be induced by applying voltage]

NMOSFET formed in p-substrate
If V
GS
V
t
channel will be induced & i
D
(Drain source )
V
t
+ve for NMOS
i
D
(V
GS
- V
t
) for small V
DS

V
DS
channel width @ drain reduces .

V
DS
=V
GS
- V
t
channel width 0 pinch off further increase no effect

For every V
GS
>V
t
there will be V
DS,sat

i
D
=K
n
[ (V
GS
- V
t
) V
DS
-
1
2
V
DS
2
]
triode region ( V
DS
<V
GS
- V
t
)

K
n
=
n
C
ox

i
D
=
1
2
K
n
[ V
DS
2
] saturation

r
DS
=
1
K
n
(V
GS
V
t
)
Drain to source resistance in triode region

PMOS :-


Pg.No. 14 of 45
Device operates in similar manner except V
GS
, V
DS
, V
t
are ve
i
D
enters @ source terminal & leaves through Drain .

V
GS
V
t
induced channel V
DS
V
GS
- V
t
Continuous channel

i
D
=K
p
[(V
GS
V
t
)
2
-
1
2
V
DS
2
] K
p
=
p
C
ox

V
DS
V
GS
- V
t
Pinched off channel .
NMOS Devices can be made smaller & thus operate faster . Require low power supply .
Saturation region Amplifier
For switching operation Cutoff & triode regions are used

NMOS PMOS

V
GS
V
t
V
GS
V
t
induced channel

V
GS
- V
DS
>V
t
V
GS
- V
DS
<V
t
Continuous channel(Triode region)

V
DS
V
GS
- V
t
V
DS
V
GS
- V
t
Pinchoff (Saturation)

Depletion Type MOSFET :- [ channel is physically implanted . i
0
flows with V
GS
=0 ]

For n-channel V
GS
+ve enhances channel .
-ve depletes channel

i
D
- V
DS
characteristics are same except that V
t
is ve for n-channel

Value of Drain current obtained in saturation when V
GS
=0 I
DSS
.

I
DSS
=
1
2
K
n
V
t
2
.

MOSFET as Amplifier :-

For saturation V
D
>V
GS
- V
t

To reduce non linear distortion
gs
<< 2(V
GS
- V
t
)
i
d
= K
n
(V
GS
V
t
)
gs
g
m
= K
n
(V
GS
V
t
)

gs
=- g
m
R
D

Unity gain frequency f
T
=
g
m
2(C
gs
+C
gd
)

JFET :-
V
GS
V
p
i
D
=0 Cut off


Pg.No. 15 of 45
V
p
V
GS
0, V
DS
V
GS
- V
p

i
D
= I
DSS
21

2
Triode

V
p
V
GS
0 , V
DS
V
GS
- V
p

i
D
= I
DSS
1

2
V
GS
= V
p
1
I
I
DSS
g
m
=
2I
DSS
|V
p
|
1
=
2I
DSS
|V
p
|

I
I
DSS
Saturation

Zener Regulators :-

For satisfactory operation
V
i
V
z
R
s
I
Z
min
+I
L
max

R
S
max
=
V
s
min
V
z
0
I
Z
min
r
z
I
Z
min
+ I
L
max

Load regulation =- (r
z
|| R
s
)

Line Regulation =
r
z
R
s
+r
z
.

For finding min R
L
take V
s min
& V
zk
, I
zk
(knee values (min)) calculate according to that .

Operational Amplifier:- (VCVS)

Fabricated with VLSI by using epitaxial method
High i/p impedance , Low o/p impedance , High gain , Bandwidth , slew rate .
FET is having high i/p impedance compared to op-amp .
Gain Bandwidth product is constant .
Closed loop voltage gain A
CL
=
A
OL
1 A
OL
feed back factor

V
0
=
1
RC
V
i
dt LPF acts as integrator ;

V
0
=
R
L

i
dt ; V
0
=
L
R

dv
i
dt
(HPF)

For Op-amp integrator V
0
=
1

i
dt ; Differentiator V
0
=-
dv
i
dt

Slew rate SR =
V
0
t
=
V
0
t
.
V
i
t
=A.
V
i
t

Max operating frequency f
max
=
slew rate
2 . V
0
=
slew rate
2 V
i
A
.


Pg.No. 16 of 45

In voltage follower Voltage series feedback

In non inverting mode voltage series feedback

In inverting mode voltage shunt feed back

V
0
=- V
T
ln
I
0

V
0
=- V
BE

= - V
T
ln

I
0

Error in differential % error =
1
CMRR

100 %

Power Amplifiers :-
Fundamental power delivered to load P
1
=
B
1
2
2
R
L
=
B
1
2
2
R
L

Total Harmonic power delivered to load P
T
=
1
2
2
+
2
2
2
+. .

= P
1
1 +
2
+
2
+
= [ 1+D
2
] P
1

Where D = +D
2
2
+. . +D
n
2
D
n
=
B
n
B
1

D =total harmonic Distortion .

Class A operation :-
o/p I
C
flows for entire 360
0

Q point located @ centre of DC load line i.e., V
ce
=V
cc
/ 2 ; =25 %
Min Distortion , min noise interference , eliminates thermal run way
Lowest power conversion efficiency & introduce power drain
P
T
=I
C
V
CE
- i
c
V
ce
if i
c
=0, it will consume more power
P
T
is dissipated in single transistors only (single ended)

Class B:-

I
C
flows for 180
0
; Q located @ cutoff ; =78.5% ; eliminates power drain
Higher Distortion , more noise interference , introduce cross over distortion
Double ended . i.e ., 2 transistors . I
C
=0 [ transistors are connected in that way ] P
T
=i
c
V
ce

P
T
=i
c
V
ce
=0.4 P
0
P
T
power dissipated by 2 transistors .

Class AB operation :-


Pg.No. 17 of 45

I
C
flows for more than 180
0
& less than 360
0

Q located in active region but near to cutoff ; =60%
Distortion & Noise interference less compared to class B but more in compared to class A
Eliminates cross over Distortion

Class C operation :-
I
C
flows for <180 ; Q located just below cutoff ; =87.5%
Very rich in Distortion ; noise interference is high .

Oscillators :-
For RC-phase shift oscillator f =
1
2RC 6+4K
h
fe
4k +23 +
29
k
where k =R
c
/R

f =
1
2RC6
>29

For op-amp RC oscillator f =
1
2RC6
| A
f
| 29 R
f
29 R
1

Wein Bridge Oscillator :-

f =
1
2R
h
fe
3
3
A 3 R
f
2 R
1

Hartley Oscillator :-

f =
1
2(L
1
+L
2
)C
|h
fe
|
L
2
L
1

| |
L
2
L
1

|A|
L
2
L
1

R
f
R
1

Colpits Oscillator :-

f =
1
2L
C
1
C
2
C
1
+C
2

|h
fe
|
C
1
C
2

| |
C
1
C
2

| A |
C
1
C
2


Pg.No. 18 of 45
Institute of Engineering Studies (IES,Bangalore) Digital Electronics Formula Sheet
Digital Electronics
Fan out of a logic gate =
I
OH
I
IH
or
I
OL
I
IL

Noise margin : V
OH
- V
IH
or V
OL
- V
IL

Power Dissipation P
D
=V
cc
I
cc
=V
cc

I
+I
2
I
I
c
when o/p low
I
I
c
when o/p high .
TTL , ECL & CMOS are used for MSI or SSI
Logic swing : V
OH
- V
OL

RTL , DTL , TTL saturated logic ECL Un saturated logic
Advantages of Active pullup ; increased speed of operation , less power consumption .
For TTL floating i/p considered as logic 1 & for ECL it is logic 0 .
MOS mainly used for LSI & VLSI . fan out is too high
ECL is fastest gate & consumes more power .
CMOS is slowest gate & less power consumption
NMOS is faster than CMOS .
Gates with open collector o/p can be used for wired AND operation (TTL)
Gates with open emitter o/p can be used for wired OR operation (ECL)
ROM is nothing but combination of encoder & decoder . This is non volatile memory .
SRAM : stores binary information interms of voltage uses FF.
DRAM : infor stored in terms of charge on capacitor . Used Transistors & Capacitors .
SRAM consumes more power & faster than DRAM .
CCD , RAM are volatile memories .
1024 8 memory can be obtained by using 1024 2 memories
No. of memory ICs of capacity 1k 4 required to construct memory of capacity 8k 8 are 16

DAC ADC
FSV = V
R
1
1
2
* LSB =Voltage range / 2

n

Resolution =
step size
FSV
=
V
R
/2
n
V
R
1
1
2
n
=
1
2
n
1
100% * Resolution =
FSV
2
n
1

Accuracy =
1
2
LSB =
1
2
n+1
* Quantisation error =
V
R
2
n
%
Analog o/p =K. digital o/p
PROM , PLA & PAL :-

AND OR
Fixed Programmable
Programmable fixed
Programmable Programmable
PROM
PAL
PLA


Pg.No. 19 of 45
Flash Type ADC : 2
n1
comparators
2
n
resistors
2
n
n Encoder
Fastest ADC :-
Successive approximation ADC : n clk pulses
Counter type ADC : 2
n
- 1 clk pulses
Dual slope integrating type : 2
n+1
clock pulses .
Flip Flops :-
a(n+1) =S +R
Q
=D
=JQ
+K
Q
=TQ
+T
Q
Excitation tables :-

For ring counter total no.of states =n
For twisted Ring counter =2n (J ohnson counter / switch tail Ring counter ) .
To eliminate race around condition t
pd clock
<<t
pd FF
.
In Master slave master is level triggered & slave is edge triggered
Combinational Circuits :-
Multiplexer :-

0
0
0 0
0
1
x
1
1
0
1
R
1 0
1
S
x
0
1
0
0 0 0
1 0
1
0
1
D
0
1
0
1
1 0
1
0
1
1 0
1
0
1
0
J K
0
1
x 1
0 x
x
x
1
0
1
T
0
1
1
0


Pg.No. 20 of 45
2
n
i/ps ; 1 o/p & n select lines.
It can be used to implement Boolean function by selecting select lines as Boolean variables
For implementing n variable Boolean function 2
n
1 MUX is enough .
For implementing n +1 variable Boolean 2
n
1 MUX +NOT gate is required .
For implementing n +2 variable Boolean function 2
n
1 MUX +Combinational Ckt is
required
If you want to design 2
m
1 MUX using 2
n
1 MUX . You need 2
mn
2
n
1 MUXes
Decoder :-
n i/p & 2
n
o/ps
used to implement the Boolean function . It will generate required min terms @ o/p & those terms
should be OR ed to get the result .
Suppose it consists of more min terms then connect the max terms to NOR gate then it will give the
same o/p with less no. of gates .
If you want to Design m 2
m
Decoder using n 2
n
Decoder . Then no. of n 2
n
Decoder
required =
2
m
2
n
.
In Parallel (n bit ) total time delay =2
n
t
pd
.
For carry look ahead adder delay =2 t
pd
.


Pg.No. 21 of 45
Institute of Engineering Studies (IES,Bangalore) Microprocessors Formula Sheet
Microprocessors
Clock frequency =
1
2
crystal frequency
Hardware interrupts
TRAP (RST 4.5) 0024H both edge level
RST 7.5 Edge triggered 003CH
RST 6.5 0034 H
RST 5.5 level triggered 002C
INTR Non vectored

Software interrupts RST 0 0000H
RST 1 0008H
2 0010H Vectored
: 0018H
:
7 0038H

HOLD & HLDA used for Direct Memory Access . Which has highest priority over all interrupts .
Flag Registers :-

Sign flag :- After arthematic operation MSB is resolved for sign flag . S =1 -ve result
If Z =1 Result =0
AC : Carry from one stage to other stage is there then AC =1
P : P =1 even no. of ones in result .
CY : if arthematic operation Results in carry then CY =1
For INX & DCX no flags effected
In memory mapped I/O ; I/O Devices are treated as memory locations . You can connect max of
65536 devices in this technique .
In I/O mapped I/O , I/O devices are identified by separate 8-bit address . same address can be used
to identify i/p & o/p device .
Max of 256 i/p & 256 o/p devices can be connected .
1
Halt
write
Read
fetch
S
0 1
S
0
1
0
1
0
1
0
AC S X P CY X Z X


Pg.No. 22 of 45

Programmable Interfacing Devices :-
8155 programmable peripheral Interface with 256 bytes RAM & 16-bit counter
8255 Programmable Interface adaptor
8253 Programmable Interval timer
8251 programmable Communication interfacing Device (USART)
8257 Programmable DMA controller (4 channel)
8259 Programmable Interrupt controller
8272 Programmable floppy Disk controller
CRT controller
Key board & Display interfacing Device
RLC :- Each bit shifted to adjacent left position . D
7
becomes D
0
.
CY flag modified according to D
7

RAL :- Each bit shifted to adjacent left position . D
7
becomes CY & CY becomes D
0
.
ROC :-CY flag modified according D
0

RAR :- D
0
becomes CY & CY becomes D
7

CALL & RET Vs PUSH & POP :-
CALL & RET PUSH & POP
When CALL executes , p automatically stores * Programmer use PUSH to save the contents
16 bit address of instruction next to CALL on the rp on stack
Stack
CALL executed , SP decremented by 2 * PUSH executes SP decremented by 2 .
RET transfers contents of top 2 of SP to PC * same here but to specific rp .
RET executes SP incremented by 2 * same here
Some Instruction Set information :-
CALL Instruction
CALL 18T states SRRWW
CC Call on carry 9 18 states
CM Call on minus 9-18
CNC Call on no carry


Pg.No. 23 of 45
CZ Call on Zero ; CNZ call on non zero
CP Call on +ve
CPE Call on even parity
CPO Call on odd parity
RET : - 10 T
RC : - 6/ 12 T states
Jump Instructions :-
J MP 10 T
J C J ump on Carry 7/10 T states
J NC J ump on no carry
J Z J ump on zero
J NZ J ump on non zero
J P J ump on Positive
J M J ump on Minus
J PE J ump on even parity
J PO J ump on odd parity .
PCHL : Move HL to PC 6T
PUSH : 12 T ; POP : 10 T
SHLD : address : store HL directly to address 16 T
SPHL : Move HL to SP 6T
STAX : R
p
store A in memory 7T
STC : set carry 4T
XCHG : exchange DE with HL 4T
XTHL :- Exchange stack with HL 16 T
For AND operation AY flag will be set & CY Reset
For CMP if A < Reg/mem : CY 1 & Z 0 (Nothing but A-B)
A > Reg/mem : CY 0 & Z 0
A = Reg/mem : Z 1 & CY 0 .


Pg.No. 24 of 45
DAD Add HL +RP (10T) fetching , busidle , busidle
DCX , INX wont effect any flags . (6T)
DCR, INR effects all flags except carry flag . Cy wont be modified
LHLD load HL pair directly
RST 12T states
SPHL , RZ, RNZ ., PUSH, PCHL, INX , DCX, CALL fetching has 6T states
PUSH 12 T ; POP 10T


Pg.No. 25 of 45
Institute of Engineering Studies (IES,Bangalore) Signals & Systems Formula Sheet

Signals & Systems

Energy of a signal |x(t)|
2
dt = |[]|
2
=

Power of a signal P =lim
1
2
|x(t)|
2
T
T
dt =lim
1
2+1
|x[n]|
2 N
n=N

x
1
(t) P
1
; x
2
(t) P
2

x
1
(t) +x
2
(t) P
1
+P
2
iff x
1
(t) & x
2
(t) orthogonal

Shifting & Time scaling wont effect power . Frequency content doesnt effect power.

if power = neither energy nor power signal
Power =0 Energy signal
Power =K power signal

Energy of power signal = ; Power of energy signal =0

Generally Periodic & random signals Power signals
Aperiodic & deterministic Energy signals

Precedence rule for scaling & Shifting :

x(at +b) (1) shift x(t) by b x(t +b)
(2) Scale x(t +b) by a x(at +b)

x( a ( t +b/a)) (1) scale x(t) by a x(at)
(2) shift x(at) by b/a x (a (t+b/a)).

x(at +b) =y(t) x(t) =y

Step response s(t) =h(t) * u(t) = h(t)dt
t
S (t) =h(t)
S[n] = []
=0
h[n] =s[n] s[n-1]

e
at
u(t) * e
bt
u(t) =
1
ba
[ e
at
- e
bt
] u(t) .
A
1
Rect (t / 2T
1
) * A
2
Rect(t / 2T
2
) =2 A
1
A
2
min (T
1
, T
2
) trapezoid (T
1
, T
2
)

Rect (t / 2T) * Rect (t / 2T) =2T tri(t / T)

Hilbert Transform Pairs :

e
x
2
/2
2
dx
= 2 ; x
2
e
x
2
/2
2
dx =
3
2 >0


Pg.No. 26 of 45
Laplace Transform :-

x(t) =
1
2j
X(s) e
st
+j
j
ds

X(s) = x(t) e
st
ds

Initial & Final value Theorems :
x(t) =0 for t <0 ; x(t) doesnt contain any impulses /higher order singularities @ t =0 then

x( 0
+
) =lim
()

x() =lim
0
()

Properties of ROC :-

1. X(s) ROC has strips parallel to j axis

2. For rational laplace transform ROC has no poles

3. x(t) finite duration & absolutely integrable then ROC entire s-plane

4. x(t) Right sided then ROC right side of right most pole excluding pole s =

5. x(t) left sided ROC left side of left most pole excluding s=-

6. x(t) two sided ROC is a strip

7. if x(t) causal ROC is right side of right most pole including s =

8. if x(t) stable ROC includes j-axis

Z-transform :-

x[n] =
1
2j
x(z) z
n1
dz

X(z) = x[n]
n=
z
n

Initial Value theorem :
If x[n] =0 for n <0 then x[0] =lim
()

Final Value theorem :-
lim
[] =lim
1
( 1) X(z)

Properties of ROC :-


Pg.No. 27 of 45

1.ROC is a ring or disc centered @ origin
2. DTFT of x[n] converter if and only if ROC includes unit circle
3. ROC cannot contain any poles
4. if x[n] is of finite duration then ROC is enter Z-plane except possibly 0 or
5. if x[n] right sided then ROC outside of outermost pole excluding z =0
6. if x[n] left sided then ROC inside of innermost pole including z =0
7. if x[n] & sided then ROC is ring
8. ROC must be connected region
9.For causal LTI system ROC is outside of outer most pole including
10.For Anti Causal system ROC is inside of inner most pole including 0
11. System said to be stable if ROC includes unit circle .
12. Stable & Causal if all poles inside unit circle
13. Stable & Anti causal if all poles outside unit circle.

Phase Delay & Group Delay :-
When a modulated signal is fixed through a communication channel , there are two different delays to be
considered.

(i) Phase delay:
Signal fixed @ o/p lags the fixed signal by (
c
) phase

P
=-
(
c
)
c
where (
c
) = K H(j)

Frequency response of channel
Group delay
g
=
d()
d

=
c
for narrow Band signal

Signal delay / Envelope delay

Probability & Random Process:-

P (A/B) =
P(AB)
P(B)

Two events A & B said to be mutually exclusive /Disjoint if P(A B) =0
Two events A & B said to be independent if P (A/B) =P(A) P(A B) =P(A) P(B)
P(Ai / B) =
P(Ai B)
P(B)
=
P
B
Ai
P(Ai)
P
B
Ai
P(Ai)
n
i=1

CDF :-
Cumulative Distribution function F
x
(x) =P { X x }

Properties of CDF :

F
x
() =P { X } =1
F
x
(- ) =0
F
x
(x
1
X x
2
) =F
x
(x
2
) - F
x
(x
1
)


Pg.No. 28 of 45
Its Non decreasing function
P{ X >x} =1 P { X x} =1- F
x
(x)

PDF :-
Pdf = f
x
(x) =
d
dx
F
x
(x)

Pmf =f
x
(x) = P{X = x
i
i=
} (x =x
i
)

Properties:-
f
x
(x) 0

F
x
(x) =f
x
(x) * u(x) = f
x
x
(x) dx

F
x
() = f
x
(x) dx =1 so, area under PDF =1

P { x
1
<X x
2
} = f
x
(x)dx
x
2
x
1

Mean & Variance :-

Mean
x
=E {x} = x f
x
(x) dx

Variance
2
=E { (X
x
)
2
} =E {x
2
} -
x
2

E{g(x)} = g(x) f
x
(x) dx

Uniform Random Variables :

Random variable X ~ u(a, b) if its pdf of form as shown below

f
x
(x) =
1
; <
0 ,

F
x
(x) =
1 ; >
; < <
0 ;

Mean =
a+b
2

Variance =(b a)
2
/ 12 E{ x
2
} =
a
2
+ ab+ b
2
3

Gaussian Random Variable :-


Pg.No. 29 of 45
f
x
(x) =
1
2
2
e
(x)
2
/2
2

X ~ N (
1
2
)

Mean = x
1
2
2
e
(x)
2
/2
2
dx =

Variance =
1
2
2
x
2

e
(x)
2
/2
2
dx =
2

Exponential Distribution :-

f
x
(x) = e
x
u(x)

F
x
(x) =( 1- e
x
) u(x)

Laplacian Distribution :-
f
x
(x) =
2
e
|x|

Multiple Random Variables :-

F
XY
(x , y) =P { X x , Y y }
F
XY
(x , ) =P { X x } =F
x
(x) ; F
xy
( , y) =P { Y <y } =F
Y
(y)
F
xy
(-, y) = F
xy
(x, - ) = F
xy
(-, -) =0
f
x
(x) = f
xy
(x, y) dy ; f
Y
(y) = f
xy
(x, y) dx

F
Y/X

Y
X
x =
P{Y y, X x}
P{X x}
=
F
XY
(x,y)
F
X
(x)

f
Y/X
(y/x) =
f
xy
(x,y)
f
x
(x)

Independence :-
X & Y are said to be independent if F
XY
(x , y) =F
X
(x) F
Y
(y)
f
XY
(x, y) =f
X
(x) . f
X
(y) P { X x, Y y} =P { X x} . P{Y y}

Correlation:
Corr{ XY} =E {XY} = f
xy
(x, y). xy. dx dy

If E { XY} =0 then X & Y are orthogonal .

Uncorrelated :-
Covariance =Cov {XY} =E { (X -
x
) (Y-
y
}
=E {xy} E {x} E{y}.
If covariance =0 E{xy} =E{x} E{y}


Pg.No. 30 of 45
Independence uncorrelated but converse is not true.

Random Process:-
Take 2 random process X(t) & Y(t) and sampled @ t
1
, t
2

X(t
1
) , X(t
2
) , Y(t
1
) , Y (t
2
) random variables

Auto correlation R
x
(t
1
, t
2
) =E {X(t
1
) X(t
2
) }
Auto covariance C
x
(t
1
, t
2
) =E { X(t
1
) -
x
(t
1
)) (X(t
2
) -
x
(t
2
) } =R
x
(t
1
, t
2
) -
x
(t
1
)
x
(t
2
)
cross correlation R
xy
(t
1
, t
2
) =E { X(t
1
) Y(t
2
) }
cross covariance C
xy
(t
1
, t
2
) =E{ X(t
1
) -
x
(t
1
)) (Y(t
2
) -
y
(t
2
) } =R
xy
(t
1
, t
2
) -
x
(t
1
)
y
(t
2
)

C
XY
(t
1
, t
2
) =0 R
xy
(t
1
, t
2
) =
x
(t
1
)
y
(t
2
) Un correlated
R
XY
(t
1
, t
2
) =0 Orthogonal cross correlation = 0
F
XY
(x, y ! t
1
, t
2
) =F
x
(x! t
1
) F
y
(y ! t
2
) independent

Properties of Auto correlation :-

R
x
(0) =E { x
2
}
R
x
() =R
x
(-) even
| R
x
() | R
x
(0)

Cross Correlation

R
xy
() =R
yx
(-)
R
xy
2
() R
x
(0) . R
y
(0)
2 | R
xy
()| R
x
(0) +R
y
(0)

Power spectral Density :-

P.S.D S
x
(j) = R
x
() e
j
d

R
x
() =
1
2

(j)e
j
d

S
y
(j) =S
x
(j) |H(j)|
2

Power =R
x
(0) =
1
2

(j) d

R
x
() =k () white process

Properties :
S
x
(j) even
S
x
(j) 0


Pg.No. 31 of 45
Institute of Engineering Studies (IES,Bangalore) Control Systems Formula Sheet
Control Systems

Time Response of 2
nd
order system :-

Step i/P :
C(t) = 1-
e

n
t
1
2
(sin
n
1
2
t tan
1

1
2
)
e(t) =
e

n
t
1
2
sin
tan
1

1
2

e
ss
=lim
e

n
t
1
2
sin
tan
1

1
2

Damping ratio ;
n
Damping factor

< 1(Under damped ) :-

C(t) = 1- =
e

n
t
1
2
Sin
tan
1

1
2

= 0 (un damped) :-

c(t) =1- cos
n
t

= 1 (Critically damped ) :-

C(t) = 1 - e
n
t
(1 +
n
t)

> 1 (over damped) :-

C(t) = 1 -
e

T =
1

n

T
undamped
> T
overdamped
> T
underdamped
> T
criticaldamp

Time Domain Specifications :-

Rise time t
r
=
n
1
2
=tan
1
1
2

Peak time t
p
=
n
d

Max over shoot % M
p
=e
n
/1
2
100
Settling time t
s
=3T 5% tolerance


Pg.No. 32 of 45
=4T 2% tolerance
Delay time t
d
=
1+0.7
n

Damping factor
2

2
=
(lnM
p
)
2
2
+ (lnM
p
)
2

Time period of oscillations T =
2
d

No of oscillations =
t
s
2/
d
=
t
s
d
2

t
r
1.5 t
d
t
r
=2.2 T
Resonant peak M
r
=
1
21
2
;
r
=
n
1 2
2

>
>

r
<
n
<
b

Bandwidth
b
=
n
(1 2
2
+ 4
4
4
2
+2)
1/2

Static error coefficients :-

Step i/p : e
ss
=lim
t
() =lim
0
() =lim
0
()
1+

e
ss
=
1
1+K
P
(positional error) K
p
=lim
0
() ()

Ramp i/p (t) : e
ss
=
1
K
v
K
v
= lim
0
()()

Parabolic i/p (t
2
/2) : e
ss
=1/ K
a
K
a
= lim
0
s
2
()()

Type <i/p e
ss
=
Type = i/p e
ss
finite
Type >i/p e
ss
=0

Sensitivity S =
A/A
K/K
sensitivity of A w.r.to K.
Sensitivity of over all T/F w.r.t forward path T/F G(s) :
Open loop: S =1

Closed loop : S =
1
1+G(s)H(s)

Minimum S value preferable
Sensitivity of over all T/F w.r.t feedback T/F H(s) : S =
G(s)H(s)
1+G(s)H(s)

Stability
RH Criterion :-

Take characteristic equation 1+G(s) H(s) =0
All coefficients should have same sign
There should not be missing s term . Term missed means presence of at least one +ve real part root


Pg.No. 33 of 45
If char. Equation contains either only odd/even terms indicates roots have no real part & posses only
imag parts there fore sustained oscillations in response.
Row of all zeroes occur if
(a) Equation has at least one pair of real roots with equal image but opposite sign
(b) has one or more pair of imaginary roots
(c) has pair of complex conjugate roots forming symmetry about origin.


Pg.No. 34 of 45
Institute of Engineering Studies (IES,Bangalore) Communications Formula Sheet
Communication Systems
Amplitude Modulation :
DSB-SC :
u (t) =A
C
m(t) cos 2f
c
t

Power P =
A
C
2
2
P
M

Conventioanal AM :

u (t) = A
C
[1 + m(t)] Cos 2f
c
t . as long as |m(t)| 1 demodulation is simple .
Practically m(t) = a m
n
(t) .
Modulation index a =
m(t)
m
n
(t)
, m
n
(t) =
m(t)
max|m(t)|

Power =
A
C
2
2
+
A
C
2
a
2
4

SSB-AM :
Square law Detector SNR =
2
K
a
m(t)

Square law modulator

K
a
= 2a
2
/ a
1
amplitude Sensitivity

Envelope Detector R
s
C (i/p) < < 1 / f
c
R
l
C (o/P) >> 1/ f
c
R
l
C << 1/

1
R
l
C

m
1
2

Frequency & Phase Modulation : Angle Modulation :-

u (t) = A
C
Cos (2f
c
t + (t) )

(t)
()
2K
f
m(t)
t
. dt FM
K
p
& K
f
phase & frequency deviation constant

max phase deviation = K
p
max | m(t) |
max frequency deviation f = K
f
max |m(t) |

Bandwidth :
Effective Bandwidth B
C
= 2 ( + 1) f
m
98% power

Noise in Analog Modulation :-

(SNR)
Base Band
=
S
N
0
=
P
m
P
n
=
P
R
N
0
B


Pg.No. 35 of 45
R = m(t) cos 2f
c
P
R
= P
m
/ 2

(SNR)
DSBSC
=
P
m
/4
P
nI/4
=
2
0
=
2 P
R
2N
0
B
=
P
R
N
0
R
=
S
N
0
= (SNR)
Base band

(SNR)
SSBSC
=
P
m
/4
P
ni/4
=
=
P
R
N
0
B
=
S
N
0
= (SNR)
Base band
.

S
N
com AM
=
2
P
m
1+
2
P
m
.
P
R
N
0
B
=
S
N
Base Band
=
2
P
m
1+
2
P
m

Noise in Angle Modulation :-

S
N
2
P
M
n
S
N
b
, PM
3
f
2
P
M
n

S
N
b
, FM

PCM :-
Min. no of samples required for reconstruction =2 =f
s
; =Bandwidth of msg signal .

Total bits required =v f
s
bps . v bits / sample

Bandwidth = R
b
/2 =v f
s
/ 2 =v .

SNR =1.76 +6.02 v

As Number of bits increased SNR increased by 6 dB/bit . Band width also increases.

Delta Modulation :-

By increasing step size slope over load distortion eliminated [ Signal raised sharply ]

By Reducing step size Grannualar distortion eliminated . [ Signal varies slowly ]

Digital Communication

Matched filter:
impulse response a(t) = P
( T t) . P(t) i/p

Matched filter o/p will be max at multiples of T . So, sampling @ multiples of T will give max SNR
(2
nd
point )
matched filter is always causal a(t) =0 for t <0
Spectrum of o/p signal of matched filter with the matched signal as i/p ie, except for a delay factor ;
proportional to energy spectral density of i/p.

0
(f) =H
opt
(f) (f) =(f) *(f) e
2fT


Pg.No. 36 of 45

0
(f) =|(f)|
2
e
j2fT

o/p signal of matched filter is proportional to shifted version of auto correlation fine of i/p signal

0
(t) =R
(t T)
At t =T
0
(T) =R
(0) which proves 2

nd
point

Cauchy-Schwartz in equality :-

|g
1
(t) g
2
(t) dt|
2
g
1
2
(t)
dt |g
2
(t)|
2
dt
If g
1
(t) =c g
2
(t) then equality holds otherwise < holds

Raised Cosine pulses :

P(t) =
Sin(
t
T
)
(
t
T
)
.
Cos (
t
T
)
14
2
t T
2

P(f) =
T , |f|
1
2T
T cos
2
t
2
|f|
1
2T
;
1
2T
|f|
1+
2T
0, |f| >
1+
2T

Bamdwidth of Raised cosine filter f
B
=
1+
2T
Bit rate
1
T
=
2f
B
1+

roll of factor
T signal time period

For Binary PSK P
e
=Q
2
=Q
2
0
=
1
2
erfc
0
.
4 PSK P
e
=2Q
2
0
1
1
2

2
0

FSK:-
For BPSK
P
e
=Q
2
=Q
0
=
1
2
erfc
2
0

All signals have same energy (Const energy modulation )

Energy & min distance both can be kept constant while increasing no. of points . But Bandwidth
Compramised.


Pg.No. 37 of 45
PPM is called as Dual of FSK .
For DPSK P
e
=
1
2
e
b
/N
0

Orthogonal signals require factor of 2 more energy to achieve same P
e
as anti podal signals

Orthogonal signals are 3 dB poorer than antipodal signals. The 3dB difference is due to distance b/w 2
points.
For non coherent FSK P
e
=
1
2
e
b
/N
0

FPSK & 4 QAM both have comparable performance .
32 QAM has 7 dB advantage over 32 PSK.

Bandwidth of Mary PSK =
2
T
s
=
2
T
blog
2
m
; S =
log
2
m
2

Bandwidth of Mary FSK =
M
2T
s
=
M
2T
b
log
2
m
; S =
log
2
m
m

Bandwidth efficiency S =
R
b
B.W
.

Symbol time T
s
=T
b
log
2
m

Band rate =
Bit rate
log
2
m


Pg.No. 38 of 45
Institute of Engineering Studies (IES,Bangalore) Electro-Magnetic Theory Formula Sheet
Electromagnetic Fields

Vector Calculus:-
A. (B C) =C. (A B) =B. (C A)
A(BC) = B(A.C) C(A.B) Bac Cab rule
Scalar component of A along B is A
B
=A Cos
AB
=A . a
B
=
(A.B)
|B|

Vector component of A along B is A
B
=A Cos
AB
. a
B
=
(A.B) B
|B|
2

Laplacian of scalars :-
A. ds =
(.)
Divergence theorem
L
A.dI
=
( )
Stokes theorem

2
A = ( .A) - A
.A = 0 solenoidal / Divergence loss ; .A > 0 source ; .A < 0 sink
A = 0 irrotational / conservative/potential.

2
A =0 Harmonic .

Electrostatics :-
Force on charge Q located @ r F =
Q
4
0

Q
k
(rr
k
)
|rr
k
|
3
N
k=1
; F
12
=
Q
1
Q
2
4
0
R
3
. R
12

E @ point r due to charge located @
=
1
4
0

(rr
k
)
|rr
k
3
N
K=1
Q
k

E due to line charge @ distance E =
L
2
0

. a
(depends on distance)
E due to surface charge
s
is E =
s
2
0
a
n
. a
n
unit normal to surface (independent of distance)
For parallel plate capacitor @ point P b/w 2 plates of 2 opposite charges is
E =
s
2
0
a
n
-
s
2
0
(
)
E due to volume charge E =
Q
4
0
R
2
a
r
.
Electric flux density D =
0
E D independent of medium
Flux = s
D .ds

Gauss Law :-
Total flux coming out of any closed surface is equal to total charge enclosed by surface .
=Q
enclosed
D . ds = Q
enclosed
=
v
. dv

v
= . D

Electric potential V
AB
=
w
Q
= - E. dI
B
A
(independent of path)
V
AB
=-
Q
4
0
r
2
B
A
a
r
. dr a
r
= V
B
- V
A
(for point charge )

Potential @ any point (distance =r), where Q is located same where , whose position is vector @ r

V =
Q
4
0
|rr
|

V(r) =
Q
4
0
r
+C . [ if C taken as ref potential ]
E =0, E =- V


Pg.No. 39 of 45
For monopole E
1
r
2
; Dipole E
1
r
3
.
V
1
r
; V
1
r
2

Electric lines of force/ flux /direction of E always normal to equipotential lines .
Energy Density W
E
=
1
2
Q
k
V
k
N
k=1
=
1
2
D. E dv =
1
2

0
E
2
dv
Continuity Equation .J =-
v
t
.

v
=
v
0
e
t/T
r
where T
r
=Relaxation / regeneration time = / (less for good conductor )

Boundary Conditions :- E
t
1
=E
t
2

Tangential component of E are continuous across dielectric-dielectric Boundary .
Tangential Components of D are dis continues across Boundary .
E
t
1
=E
t
2
;
D
1t
D
2t
=
1
/
2
.
Normal components are of D are continues , where as E are dis continues.
D
1n
- D
2n
=
s
; E
1n
=
1

E
2n
;
tan
1
tan
2
=
2
=
r1
r2

H
1t
=H
2t
B
12
=
2
B
2
t

B
1n
=B
2n
H
1n
=
1
H
2n

Maxwells Equations :-
faraday law V
emf
=E. dI =-
d
dt
B. ds

Transformer emf = E. dI = -
B
t
ds E =-
B
t

s

Motional emf = E
m
= ( B).

H =J +
D
t

Electromagnetic wave propagation :-
H = J +
D =E
2
E =

E = -
B =H
2
H =

. D =
v
J = E
.B = 0

E
y
H
z
=-
E
z
H
y
=/ ; E.H =0 E H in UPW

For loss less medium
2
E -
2
E =0 =j( +j) = +j.

=
1 +
2
1


Pg.No. 40 of 45
=
1 +
2
+1

E(z, t) = E
0
e
z
cos(t z) ; H
0
=E
0
/ .
=
j
+j
| | <

|| =
/
1+
1/4
tan 2
=/.
= +j attenuation constant Neper /m . | N
p
| =20 log
10
=8.686 dB
For loss less medium =0; =0.
phase shift/length ; = / ; =2/ .

J
s
J
d
=
E
= / =tan loss tanjent =2

If tan is very small ( <<) good (lossless) dielectric
If tan is very large ( >>) good conductor
Complex permittivity
C
= 1
- j
.
Tan =
.

Plane wave in loss less dielectric :- ( 0)
=0 ; =
; =
1
; = 2/ ; =
r
/
r
0.
E & H are in phase in lossless dielectric

Free space :- ( =0, =
0
, =
0
)
=0 , =
0
0
; u =1/
0
0
, = 2/ ; =
0
/
0
< 0 = 120 0
Here also E & H in phase .

Good Conductor :-
>> / = =
0
; =
0
r

= =f ; u =2/ ; =2 / ; =
W
45
0

Skin depth = 1/
=
1
2 e
j/4
=
1+j

Skin resistance R
s
=
1
=
f

R
ac
=
R
s
.l
w

R
dc
=
l
s
.

Poynting Vector :-
(E H) ds =-
dt

1
2
[ E
2
+ H
2
] dv E
2
dv
S v


Pg.No. 41 of 45

ave
(z) =
1
2

E
0
2
||
e
2z
cos
a
z

Total time avge power crossing given area P
avge
=P
ave
(s) ds
S

Direction of propagation :- (
)
a
k
a
E
=a
H

a
E
a
H
=a
k

Both E & H are normal to direction of propagation
Means they form EM wave that has no E or H component along direction of propagation .

Reflection of plane wave :-
(a) Normal incidence
Reflection coefficient =
E
r0
E
i0
=
2

1
2
+
1

T
xn
coefficient =
E
t0
E
i0
=
2
2
2
+
1

Medium-I Dielectric , Medium-2 Conductor :-

>
:-
>0 , there is a standing wave in medium & T
xed
wave in medium 2.
Max values of | E
1
| occurs
Z
max
= - n/
1
=
n
1
2
; n = 0, 1, 2.
Z
min
=
(2n+1)
2
1
=
(2n+1)
1
4

<
:- E
1max
occurs @
1
Z
max
=
(2n+1)
2
Z
max
=
(2n+1)
2
1
=
(2n+1)
1
4

1
Z
min
= n Z
min
=
n
1
=
n
1
2

H
1
min occurs when there is |t
1
|max
S =
|E
1
|
max
|E
1
|
min
=
|H
1
|
max
|H
1
|
min
=
1+||
1||
; | | =
s1
s+1

Since || <1 1

Transmission Lines :-
Supports only TEM mode
LC = ; G/C = / .

d
2
V
s
dz
2
- r
2
V
s
=0 ;
d
2
I
s
dz
2
- r
2
I
s
=0
= (R +jL)(G +jC) = +j
V(z, t) = V
0
+
e
z
cos (t- z) +V
0
e
z
cos (t +z)
Z
0
=
V
0
I
0
=
R+jL
G+jC
=
R+jL
G+jC

Lossless Line : (R = 0 =G; = 0)


Pg.No. 42 of 45
= +j =jLC ; = 0, = w LC ; = 1/ f LC , u = 1/ LC
Z
0
= L/C

Distortion less :(R/L = G/C)
= RG ; = L
G
R
= C
R
G
= LC
Z
0
=
R
G
=
L
C
; = 1/f LC ; u =
1
LC
= V
p
; uz
0
= 1/C , u /z
0
= 1/L

i/p impedance :-
Z
in
=Z
0

+ Z
0
tanhl
0
+ Z
L
tanhl
for lossless line =j tan hjl =j tan l
Z
in
=Z
0

+ Z
0
tanl
0
+ Z
L
tanl

VSWR =
L
=
Z
L
Z
0
Z
L
+Z
0

CSWR =-
L

Transmission coefficient S =1 +
SWR =
V
max
V
min
=
I
max
I
min
=
1+|
L
|
1|
L
|
=
Z
L
Z
0
=
Z
0
Z
L

(Z
L
>Z
0
) (Z
L
<Z
0
)

|Z
in
|
max
=
V
max
I
min
=SZ
0

|Z
in
|
min
=
V
min
I
max
=Z
0
/S

Shorted line :-
L
=-1 , S = Z
in
=Z
sc
=jZ
0
tan l

L
=-1 , S = Z
in
=Z
sc
=j Z
0
tan l.

Z
in
may be inductive or capacitive based on length 0

If l < / 4 inductive (Z
in
+ve)

4
<l </2 capacitive (Z
in
-ve)

Open circuited line :-
Z
in
=Z
oc
=-jZ
0
cot l

l
=1 s = l < / 4 capacitive

4
<l < /2 inductive
Z
sc
Z
oc
=Z
0
2

Matched line : (Z
L
=Z
0
)
Z
in
=Z
0
=0 ; s =1
No reflection . Total wave T
xed
. So, max power transfer possible .


Pg.No. 43 of 45
Behaviour of Transmission Line for Different lengths :-

l = /4
=0
impedance inverter @ l = /4

l = /2 : Z
in
=Z
0

=0
=
impedance reflector @ l = /2

Wave Guides :-
TM modes : (H
z
= 0)
E
z
=E
0
sin
x sin
y e
nz

h
2
=k
x
2
+k
y
2
=
m
a
2
+
n
b
2
where k =

m no. of half cycle variation in X-direction
n no. of half cycle variation in Y- direction .
Cut off frequency
C
=
1
m
a
2
+
n
b
2
=0; =0 =
k
2
<
m
a
2
+
n
b
2
Evanscent mode ; = ; =0
k
2
>
m
a
2
+
n
b
2
Propegation mode = j = 0

=
k
2
m
a
n
b
2

f
c
=
u
p
m
a
2
+
n
b
2
u
p
=phase velocity =
1
is lossless dielectric medium

c
=u
/f
c
=
2
(
m
a
)
2
+(
n
b
)
2

=
1
f
c
f
=/ W
=phase constant in dielectric medium.

u
p
=/ =2/ =u
p
/f phase velocity & wave length in side wave guide

TM
=
E
x
H
y
=-
E
y
H
x
=
1
f
c
f
TM
=
1
f
c
f
impedance of UPW in medium

TE Modes :- (
= 0)

H
z
=H
0
cos
cos
e
nz


Pg.No. 44 of 45

TE
=
w
1
f
c
f
2

TE
>
TM

TE
10
Dominant mode

Antennas :-
Hertzian Dipole :- H
s
=
jI
0
dl
4r
sin e
j
E
s
=H
s

Half wave Dipole :-
H
s
=
jI
0
e
j
cos
2
cos
2sin
; E
s
=H
s


Pg.No. 45 of 45

Ece Formula Sheet Final

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Ece Formula Sheet Final

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One stop series for

is Eigen value of adj A.

Neccessary & Sufficient Conditions for f(z) to be analytic

* LSB =Voltage range / 2

(x) dx =1 so, area under PDF =1

(x, y). xy. dx dy

(0) which proves 2

is lossless dielectric medium

=phase constant in dielectric medium.

impedance of UPW in medium

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