TLP3526

2002-09-25 1
TOSHIBA Photocoupler GaAs Ired & PhotoTriac
TLP3526

Triac Driver
Programmable Controllers
ACOutput Module
Solid State Relay



The TOSHIBA TLP3526 consists of a phototriac optically coupled to a
gallium arsenide infrared emitting diode in a 16 lead plastic DIP.


Peak offstate voltage: 600V(min.)
Trigger LED current: 10mA(max.)
Onstate current: 1.0Arms(max.)
Isolation voltage: 2500 Vrms(min.)
UL recognized: UL1577, file no. E67349







Pin Configuration (top view)
2 : Anode
3 : Cathode
4,5,6,7 : N.C.
9,13 : Triac T2
11 : Triac T1
15 : Triac gate
15 2
13
11
9
3
4
5
6
7




Unit in mm


TOSHIBA 1120A2
Weight: 1.13 g
TLP3526
2002-09-25 2
Maximum Ratings (Ta = 25C)
Characteristic Symbol Rating Unit
Forward current I
F
50 mA
Forward current derating (Ta 53C) I
F
/ C 0.7 mA / C
Peak forward current (100s pulse, 100pps) I
FP
1 A
Reverse voltage V
R
5 V
L
E
D

Junction temperature T
j
125 C
Offstate output terminal voltage V
DRM
600 V
Ta = 40C 1.0
Onstate RMS current
Ta = 60C
I
T(RMS)

0.7
A
Onstate current derating (Ta 40C) I
T
/ C 14.3 mA / C
Peak current from snubber circuit
(100s pulse, 120pps)
I
SP
2 A
Peak nonrepetitive surge current (50Hz, peak) I
STM
10 A
D
e
t
e
c
t
o
r

Junction temperature T
j
110 C
Storage temperature range T
stg
40~125 C
Operating temperature range T
opr
20~80 C
Lead soldering temperature (10 s) T
sol
260 C
Isolation voltage (AC, 1min., R.H. 60%) (Note) BV
S
2500 V
rms

(Note 1) Device considered a two terminal: LED side pins shorted together and detector side pins shorted together.

Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage V
AC
240 V
ac
Forward current I
F
15 20 25 mA
Peak current from snubber circuit I
SP
1 A
Operating temperature T
opr
20 80 C

TLP3526
2002-09-25 3
Individual Electrical Characteristics (Ta = 25C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage V
F
I
F
= 10mA 1.0 1.15 1.3 V
Reverse current I
R
V
R
= 5V 10 A
L
E
D

Capacitance C
T
V = 0, f = 1MHz 30 pF
Peak offstate current I
DRM
V
DRM
= 600V, Ta = 110C 100 A
Peak onstate voltage V
TM
I
TM
= 1.5A 3.0 V
Holding current I
H
R
L
= 100 25 mA
Critical rate of rise of
offstate voltage
dv / dt V
in
= 240V
rms
(Fig.1) 500 V/s
D
e
t
e
c
t
o
r

Critical rate of rise of
commutating voltage
dv / dt(c)
V
in
= 240V
rms
, I
T
= 1.0Arms
(Fig.1)
5 V/s

Coupled Electrical Characteristics (Ta = 25C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Trigger LED current I
FT
V
T
= 6V 10 mA
Capacitance
(input to output)
C
S
V
S
= 0, f = 1MHz 1.5 pF
Isolation resistance R
S
V
S
= 500V 510
10
10
14

AC, 1 minute 2500
AC, 1 second, in oil 5000
V
rms
Isolation voltage BV
S

DC, 1 minute, in oil 5000 V
dc
Fig.1: dv / dt test circuit

5V,V
CC

0V
dv/dtc dv/dt

R
in

R
L

V
in

2
3
15
V
CC

120


13
11
9
TLP3526
2002-09-25 4


Ambient temperature Ta ()

A
l
l
o
w
a
b
l
e

f
o
r
w
a
r
d

c
u
r
r
e
n
t



I
F


(
m
A
)


I
F
Ta
0
120 100 80 60 40 20 0 20
20
40
60
80
100
Ambient temperature Ta ()

O
n
-
s
t
a
t
e

c
u
r
r
e
n
t

I
T
(
R
M
S
)


(
A
)


I
T(RMS)
Ta
0
120 100 80 60 40 20 0 20
0.4
0.8
1.2
1.6
2.0
50
Pulse forward voltage V
FP
(V)


I
FP
V
FP

P
u
l
s
e

f
o
r
w
a
r
d

c
u
r
r
e
n
t

I
F
P


(
m
A
)

Pulse width 10s
Repetitive frequency
100Hz
Ta=25
1
2.6 2.2 1.8 1.4 1.0
3
5
10
100
300
500
1000
0.6
30
50
Duty cycle ratio D
R


A
l
l
o
w
a
b
l
e

p
u
l
s
e

f
o
r
w
a
r
d

c
u
r
r
e
n
t



I
F
P


(
m
A
)


I
FP
D
R
Pulse width 100s
Ta=25
10
10
0
3
30
500
3000
10
1
10
2
10
3
3 3 3
50
100
1000
300
Forward voltage V
F
(V)


F
o
r
w
a
r
d

c
u
r
r
e
n
t

I
F


(
m
A
)


I
F
V
F
0.1
1.8 1.6 1.6 1.4 1.2 1.0 0.8
0.3
0.5
1
10
30
50
100
0.6
5
3
Ta=25

F
o
r
w
a
r
d

v
o
l
t
a
g
e

t
e
m
p
e
r
a
t
u
r
e


c
o
e
f
f
i
c
i
e
n
t

V
F

/

T
a


(
m
V

/

)


V
F
/ Ta I
F
0.4
5 10 1 0.3 30 0.5 0.1 3
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward current I
F
(mA)

TLP3526
2002-09-25 5


V
T
= 6V
Ambient temperature Ta ()

T
r
i
g
g
e
r

L
E
D

c
u
r
r
e
n
t

I
F
T



(
a
r
b
i
t
r
a
r
y

u
n
i
t
)


Normalized I
FT
Ta
0.1
100 80 60 40 20 0 20 40
0.3
0.5
1
2
1.2
3
Ambient temperature Ta ()

H
o
l
d
i
n
g

c
u
r
r
e
n
t

I
H



(
a
r
b
i
t
r
a
r
y

u
n
i
t
)


Normalized I
H
Ta
0.1
100 80 60 40 20 0 20 40
0.3
0.5
1
2
1.2
3
100
Ambient temperature Ta ()

P
e
a
k

o
f
f
-
s
t
a
t
e

c
u
r
r
e
n
t

I
D
R
M



(
a
r
b
i
t
r
a
r
y

u
n
i
t
)


Normalized I
DRM
Ta
V
DRM
= Rated
80 60 40 20 0
10
3

10
2

10
1

10
0

Ambient temperature Ta ()

O
f
f
-
s
t
a
t
e

o
u
t
p
u
t

t
e
r
m
i
n
a
l

v
o
l
t
a
g
e




V
D
R
M


(
a
r
b
i
t
r
a
r
y

u
n
i
t
)


Normalized V
DRM
Ta
0.2
100 80 60 40 20 0 20 40
0.6
0.8
1.0
1.2
1.4
0.4

I
n
h
i
b
i
t

v
o
l
t
a
g
e


V
I
H

(
a
r
b
i
t
r
a
r
y

u
n
i
t
)

Normalized V
IH
Ta

Ambient temperature Ta ()
10
1
30 50 100 300 500 1000
1.4
1.6
1.8
2
3
5
10
1.2
TLP3526
2002-09-25 6


TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS ON PRODUCT USE