Вы находитесь на странице: 1из 6

2SK2613

2006-11-09 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII)
2SK2613

Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications


Low drain-source ON resistance: R
DS (ON)
= 1.4 (typ.)
High forward transfer admittance: Y
fs
= 6.0 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 800 V)
Enhancement-model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Absolute Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
1000 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
1000 V
Gate-source voltage V
GSS
30 V
DC (Note 1) I
D
8
Drain current
Pulse (Note 1) I
DP
24
A
Drain power dissipation (Tc = 25C) P
D
150 W
Single pulse avalanche energy
(Note 2)
E
AS
910 mJ
Avalanche current I
AR
8 A
Repetitive avalanche energy (Note 3) E
AR
15 mJ
Channel temperature T
ch
150 C
Storage temperature range T
stg
55~150 C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
0.833 C/W
Thermal resistance, channel to ambient R
th (ch-a)
50 C/W
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C, L = 26.3 mH, R
G
= 25 , I
AR
= 8 A
Note 3: Repetitive rating: Pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURSE
JEDEC
JEITA
TOSHIBA 216C1B
Weight: 4.6 g (typ.)
1
3
2
2SK2613
2006-11-09 2
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= 30 V, V
DS
= 0 V 10 A
Drain-source breakdown voltage V
(BR) GSS
I
G
= 10 A, V
DS
= 0 V 30 V
Drain cut-OFF current I
DSS
V
DS
= 800 V, V
GS
= 0 V 100 A
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 1000 V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.0 4.0 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 4 A 1.4 1.7
Forward transfer admittance Y
fs
V
DS
= 20 V, I
D
= 4 A 2.0 6.0 S
Input capacitance C
iss
2000
Reverse transfer capacitance C
rss
30
Output capacitance C
oss

V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
200
pF
Rise time t
r
20
Turn-ON time t
on
40
Fall time t
f
30
Switching time
Turn-OFF time t
off



100
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
65
Gate-source charge Q
gs
40
Gate-drain (miller) charge Q
gd

V
DD


400 V, V
GS
= 10 V, I
D
= 8 A
25
nC

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1) I
DR
8 A
Pulse drain reverse current (Note 1) I
DRP
24 A
Forward voltage (diode) V
DSF
I
DR
= 8 A, V
GS
= 0 V 1.9 V
Reverse recovery time t
rr
1600 ns
Reverse recovery charge Q
rr

I
DR
= 8 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/s 24 C

Marking

Duty
<
=
1%, t
w
= 10 s
0 V
10 V
V
GS
R
L
= 100
V
DD


400 V
I
D
= 4 A
V
OUT
4
.
7


K2613
TOSHIBA
Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
2SK2613
2006-11-09 3















































10
0.1 0.3 1 3 10 30
0.1
0.3
1
3
5
0.5
V
GS
= 10,15
Common source
Tc = 25C
Pulse test

F
o
r
w
a
r
d

t
r
a
n
s
f
e
r

a
d
m
i
t
t
a
n
c
e

Y
f
s



(
S
)


D
r
a
i
n
-
s
o
u
r
c
e

v
o
l
t
a
g
e


V
D
S


(
V
)



Drain-source voltage V
DS
(V)

I
D
V
DS


D
r
a
i
n

c
u
r
r
e
n
t


I
D


(
A
)


Drain-source voltage V
DS
(V)

I
D
V
DS


D
r
a
i
n

c
u
r
r
e
n
t


I
D


(
A
)


Gate-source voltage V
GS
(V)

I
D
V
GS


D
r
a
i
n

c
u
r
r
e
n
t


I
D


(
A
)


Gate-source voltage V
GS
(V)

V
DS
V
GS

Drain current I
D
(A)

Y
fs
I
D


Drain current I
D
(A)

R
DS (ON)
I
D

D
r
a
i
n
-
s
o
u
r
c
e

o
n

r
e
s
i
s
t
a
n
c
e

R
D
S

(
O
N
)


(

)

0
10
2
6
4
8
4 0 20 8 12 16
6.0
Common source
Tc = 25C
Pulse test
V
GS
= 4.75 V
5.0
5.25
5.5
5.75
10 15
Common source
V
SD
= 20 V
Pulse test
0
20
4
12
8
16
2 0 10 4 6 8
Tc = 55C
25
100
0.1
100
1
10
0.1 100 10
25
100
Tc = 55C
Common source
V
SD
= 20 V
Pulse test
1
0
20
4
12
8
16
4 0 20 8 12 16
2
Common source
Tc = 25C
Pulse test
4
I
D
= 8 A
Common source
Tc = 25C
Pulse test
0
20
4
12
8
16
20 0 100 40 60 80
V
GS
= 5.0 V
6.25
5.25
5.5
5.75
6.5
15
6.0
10
2SK2613
2006-11-09 4


































100
10
10000
100
1000
1 0.1 1000 10
C
iss

C
oss

C
rss

Common source
VGS = 0 V
f = 1 MHz
Tc = 25C
V
GS
= 0, 1 V
0
100
0.1
1
10
0.2 0 1.2 0.6
1
3
10
0.4 0.8 1.0

D
r
a
i
n

p
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n


P
D


(
W
)


G
a
t
e

t
h
r
e
s
h
o
l
d

v
o
l
t
a
g
e


V
t
h


(
V
)



Case temperature Tc (C)

R
DS (ON)
Tc

D
r
a
i
n
-
s
o
u
r
c
e

o
n

r
e
s
i
s
t
a
n
c
e


R
D
S

(
O
N
)


(

)


Drain-source voltage V
DS
(V)

I
DR
V
DS


D
r
a
i
n

r
e
v
e
r
s
e

c
u
r
r
e
n
t


I
D
R


(
A
)


Drain-source voltage V
DS
(V)

Capacitance V
DS


C
a
p
a
c
i
t
a
n
c
e


C


(
p
F
)


Case temperature Tc (C)

V
th
Tc


Case temperature Tc (C)

P
D
Tc
0
5
1
3
2
4
40 80 160 0 40 80
Common source
V
GS
= 10 V
Pulse test
I
D
= 8 A
2
4
200
40
120
80
160
0
0 80 120 200 40 160

D
r
a
i
n
-
s
o
u
r
c
e

v
o
l
t
a
g
e


V
D
S


(
V
)

G
a
t
e
-
s
o
u
r
c
e

v
o
l
t
a
g
e


V
G
S


(
V
)

Total gate charge Q
g
(nC)

Dynamic input/output characteristics

5
1
3
2
4
0
80 0 40 80 120 160 40
Common source
V
DS
= 10 V
I
D
= 1 mA
Pulse test
500
100
300
200
400
0
0 40 60 80 100 20
Common source
I
D
= 8 A
Tc

= 25C
Pulse test
400
200
V
DS
= 100 V
V
DS
V
GS
20
4
12
8
16
0
2SK2613
2006-11-09 5
























































10 100 1 m 10 m 100 m 1 10
0.001
0.01
0.1
1
10
T
P
DM
t
Duty = t/T
R
th (ch-c)
= 0.833C/W
Single pulse
Duty = 0.5
0.2
0.1
0.05
0.02
0.01

r
th
t
w


Safe operating area

E
AS
T
ch

Drain-source voltage V
DS
(V)

Pulse width t
w
(S)

Channel temperature (initial) Tch (C)


N
o
r
m
a
l
i
z
e
d

t
r
a
n
s
i
e
n
t

t
h
e
r
m
a
l

i
m
p
e
d
a
n
c
e

r
t
h

(
t
)
/
R
t
h

(
c
h
-
a
)


A
v
a
l
a
n
c
h
e

e
n
e
r
g
y


E
A
S


(
m
J
)


D
r
a
i
n

c
u
r
r
e
n
t


I
D


(
A
)



15 V
15 V
Test circuit Wave form
I
AR

B
VDSS

V
DD
V
DS

R
G
= 25
V
DD
= 90 V, L = 26.3 mH

=
V
DD
B
VDSS
B
VDSS 2
I L
2
1

AS
0.01
1
0.1
0.03
0.05
1
0.3
0.5
10
3
5
10 3 100 30 10000 300
DC Operation
Tc

= 25C
100 s *
1 ms *
* Single nonrepetitive pulse
Tc = 25C
Curves must be derated linearly
with increase in temperature.
I
D
max (pulsed) *
I
D
max (continuous)
V
DSS
max
1000 3000
100
30
50
0
25
200
400
600
1000
800
50 75 100 125 150
2SK2613
2006-11-09 6




RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

Вам также может понравиться