RAS300

RAS 300 Power Amplifier
Introduction
This power amplifier was born in November 2008 after the needs of two Turkish
friends Gokhan and Orsoy. Although the amplifier seems very complex at first glance
the design is fairly simple and straight forward.
It was decided to split the amplifier in two halves, the first consisting of the input and
driver while the second half consists of all the output transistors for easy mounting
directly onto a heat sink.
Important Issues
This amplifier is capable of more 1000 watts peak into 4 Ohm (70V supply) and it is
important to note this when calculating fuse and wire size for internal wiring.
Furthermore, a class AB amplifier could dissipate a lot of heat and you need to make
sure that you have adequate heat sink to dissipate this heat.
Rod Eliot has an excellent paper regarding heat sink requirements on his web site and
really worth checking out. http://sound.westhost.com/heatsinks.htm
The other issue is that of power supply, reservoir capacitors and ground wiring. The
better the power supply, the better the sound quality.
Predicted Performance
The characteristic performance of this amplifier has been acquired by means of
simulation only and some graphs illustrating the typical characteristics are available at
the end of this paper. From these graphs we can see the following:
Output power 4
8
372 watt rms

205 watt rms
THD
0.0064% @ 1 kHz into 8 Ohms

0.0008% @ 1 kHz into 4 Ohms
Frequency Response
Phase deviation
Bias Current
Operating Voltage
2Hz to 260 kHz (-3dB)

14 degrees 20 Hz 20 kHz
1.3 Amp
30 70 VDC
Slew Rate
20V/uS
Note all derivatives are at just before the onset of clipping.

Description
The amplifier is a full complimentary symmetry design from beginning to end, this
balancing I have found the most suitable for reproducing music.
The input is shared by two long tail pairs of opposite polarity and it is important to
match them as well as one could
I used a very unique constant current sources that was introduced to me by Alex
Miguel which provided very stable and low constant impedance sources. Each of the
long tail pairs are running at 1.2 mA and optimised.
An offset adjust was provided degeneration resistors as well for in case the transistors
used are not that well matched.
The VAS is a dual complimentary Darlington pair with a bias current of about 11mA.
I simple 1 k multi-turn pot is used to set the gain, which I kept a low value so
accidental over bias will not damage the amp in any way. There is no reason that you
cannot bias this amp into class A, one just need to take not that the dissipation would
about double.
The power transistors are spread over a long PCB and intended to be fitted to a
complete heat sink assembly, this make the amplifier somewhat modular and easy to
work on.
There is nothing of critical nature in this amp so built correctly it should fire up
working the first time round.
Protection
Keep in mind that there is no protection of the amp in anyway. My simpler units have
run for about ten years never giving a problem. If you are concerned with speaker and
output protection there are many articles that you can research.
Completeness
For the sake of completeness I have attached datasheets of the semiconductors used.
300watt power amp.lsp

Ref
Qty
Name
Package
---------------------------------------C15
2
1000u
63V
C16
---------------------------------------C17
3
100n
5_0 mm
C18
C22
---------------------------------------VR2
1
100R 10T
G
---------------------------------------C11
2
100u
16V
C12
---------------------------------------C14
1
10u
35V
---------------------------------------R19
2
120E
250mW
R28
---------------------------------------R36
2
150E
250mW
R37
---------------------------------------R32
1
1K0
250mW
---------------------------------------R29
2
1K2
250mW
R30
---------------------------------------VR1
1
1K 10T
G
---------------------------------------J2
1
2 Way Pin
DSC
---------------------------------------R21
4
22E
250mW
R22
R23
R24
---------------------------------------R38
1
22K
250mW
---------------------------------------R31
1
27K
250mW
---------------------------------------Q9
2
2SA970
TO-92
Q10
---------------------------------------Q11
2
2SC2240
TO-92
Q12
---------------------------------------R1
4
3K3
250mW
R2
R34
R35
---------------------------------------C21
1
470u
16V
---------------------------------------R39
1
560E
250mW
---------------------------------------C2
1
5p6
5_0 mm
---------------------------------------R17
2
68K
250mW
R26
---------------------------------------C19
2
68p
5_0 mm
C20
---------------------------------------R18
2
6K8
250mW
R27
---------------------------------------J1
1
8191-6
DSC
---------------------------------------Page 1
300watt power amp.lsp

Q21
1
MJE340
TO-126
---------------------------------------Q22
1
MJE350
TO-126
---------------------------------------Q16
4
MPSA42
TO-92
Q17
Q18
Q19
---------------------------------------Q13
4
MPSA92
TO-92
Q14
Q15
Q20
----------------------------------------
Page 2
RAS 300 Driver Board R02
RAS 300 Driver Board R02
V-NEG
V-POS
RAS350 OUTPUT STAGE
300watt power amp O-P.lsp

Ref
Qty
Name
Package
---------------------------------------R9
12
0E22
2 Watt
R10
R11
R12
R13
R14
R15
R16
R21
R22
R23
R24
---------------------------------------REF1
1
0V
---------------------------------------C24
1
150n
DSC
---------------------------------------D8
2
1N4007
DSC
D9
---------------------------------------Q1
6
2SJ162
TOP-3P
Q2
Q3
Q4
Q9
Q11
---------------------------------------Q5
6
2SK1058
TO-3P
Q6
Q7
Q8
Q10
Q12
---------------------------------------R1
12
470E
500mW
R2
R3
R4
R5
R6
R7
R8
R17
R18
R19
R20
---------------------------------------J1
1
8191-5
DSC
----------------------------------------
Page 1
300W MOSFET AMP.CIR
80.000
40.000
0.000
-40.000
-80.000
-120.000
10
db(v(OUT))
100
1K
10K
100K
1M
10M
100M
100K
1M
10M
100M
F (Hz)
300.000
150.000
0.000
-150.000
-300.000
-450.000
10
100
ph(v(OUT)) (Degrees)
1K
10K
F (Hz)
10K
1K
100
10
1000m
100m
10m
1m
100u
10u
1u
300W MOSFET AMP.CIR
Amplitude of V(OUT) vs Frequency
1.000K
2.000K
HARM(V(OUT))
3.000K
4.000K
5.000K
6.000K
7.000K
8.000K
9.000K
10.000K
F (Hz)
0.00125
Cumulative Percent Distortion of V(OUT) vs Frequency
0.00100
0.00075
0.00050
0.00025
0.00000
1.000K
2.000K
3.000K
THD(HARM(V(OUT)),1000) (%)
4.000K
5.000K
6.000K
7.000K
8.000K
9.000K
10.000K
F (Hz)
75.000
Sampled Waveform V(OUT) vs T
50.000
25.000
0.000
-25.000
-50.000
0.000m
V(OUT) (V)
1.000m
2.000m
T (Secs)
3.000m
4.000m
5.000m
300W MOSFET AMP.CIR
90.000
60.000
30.000
108.907
0.000
-30.000
-60.000
0.000m
v(OUT) (V)
0.200m
0.400m
0.600m
0.800m
1.000m
0.600m
0.800m
1.000m
T (Secs)
600.000
480.000
997.698u,372.713
360.000
240.000
120.000
0.000
0.000m
RMS(v(r52))*RMS(i(R52))
0.200m
0.400m
T (Secs)
20.000
16.000
12.000
8.000
13.621
13.642
4.000
0.000
0.000m
0.200m
0.400m
0.600m
I(R97)+I(R98)+I(R99)+I(R100)+I(R126)+I(R127) I(R101)+I(R102)+I(R103)+I(R104)+I(R128)+I(R129)
T (Secs)
0.800m
1.000m
2SJ160, 2SJ161, 2SJ162

Silicon P-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
Good frequency characteristic

High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
2SJ160, 2SJ161, 2SJ162

Outline
TO-3P
D
1
3
1. Gate
2. Source
(Flange)
3. Drain
Absolute Maximum Ratings (Ta = 25C)

Item
Drain to source voltage
2SJ160
Symbol
Ratings
Unit
VDSX
120
2SJ161
140
2SJ162
160
Gate to source voltage
VGSS
15
Drain current
ID
Body to drain diode reverse drain current
I DR
Channel dissipation
Pch*
100
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Note:
1. Value at TC = 25C
2SJ160, 2SJ161, 2SJ162

Electrical Characteristics (Ta = 25C)
Item
Symbol Min
V(BR)DSX
Typ
Max
Unit
Test conditions
120
I D = 10 mA , VGS = 10 V
Drain to source
2SJ160
breakdown voltage
2SJ161
140
2SJ162
160
Gate to source breakdown

voltage
V(BR)GSS
15
I G = 100 A, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.15
1.45
I D = 100 mA, VDS = 10 V
Drain to source saturation

voltage
VDS(sat)
12
I D = 7 A, VGD = 0*1
Forward transfer admittance
|yfs|
0.7
1.0
1.4
I D = 3 A, VDS = 10 V*1
Input capacitance
Ciss
900
pF
VGS = 5 V, VDS = 10V,
Output capacitance
Coss
400
pF
f = 1 MHz
Reverse transfer capacitance
Crss
40
pF
Turn-on time
t on
230
ns
Turn-off time
t off
110
ns
Note:
VDD = 20 V, ID = 4 A
1. Pulse test
2SJ160, 2SJ161, 2SJ162

Maximum Safe Operation Area
Power vs. Temperature Derating

20
150
10
ms
1
Sh
Sh
ot)
=
(T C
s(
(1
ot
25
1.0
Drain Current ID (A)
tio
(120 V, 0.83 A)
(140 V, 0.71 A)
(160 V, 0.63 A)
2SJ160
2SJ161
2SJ162
0.5
0.2
5
150
Typical Output Characteristics
Typical Transfer Characteristics

1.0
TC = 25C
VDS = 10 V
9
7
6
5
Pch
0W
3
2
= 10
0.8
75
10
10 20
50 100 200 500
Drain to Source Voltage VDS (V)
25
C
25
50
100
Case Temperature TC (C)
PW
ra
50
e
Op
100
ID max (Continuous)
PW
(14.3 V,
5 7 A)
=
10
0
m
DC
Channel Dissipation Pch (W)
Ta = 25C
10
0.6
0.4
0.2
2
1 V
VGS = 0
10
30
40
20
50
0.4
1.2
1.6
2.0
0.8
Gate to Source Voltage VGS (V)
10
5
2
1.0
0.5
75
10
10
25
Drain to Source Saturation Voltage

vs. Drain Current
VGD = 0
25
TC
Input Capacitance vs.

Gate to Source Voltage
VDS = 10 V
f = 1 MHz
4
2
6
8
10
3.0
1.0
0.3
0.1
0.03
0.01
0.003
10 k

Forward Transfer Admittance yfs (S)
0.2
0.1
0.1 0.2
0.5 1.0 2
100
200
500
1,000
Drain to Source Saturation Voltage VDS (sat) (V)

Input Capacitance Ciss (pF)
2SJ160, 2SJ161, 2SJ162

Drain to Source Voltage vs.
2
ID = 1 A
10 M
2
6
8
4
10
3M
Forward Transfer Admittance

vs. Frequency
TC = 25C
VDS = 10 V
ID = 2 A
30 k 100 k 300 k 1 M
Frequency f (Hz)
2SJ160, 2SJ161, 2SJ162

Switching Time vs. Drain Current
Switching Time ton, toff (ns)
500
200
ton
100
50
toff
20
10
5
0.1 0.2
0.5 1.0 2
Switching Time Test Circuit
10
Waveforms
Output
10%
RL
Input
Input
90%
ton
PW = 50 s
duty ratio
= 1%
20 V
toff
90%
50
Output
10%
15.6 0.3
1.5
0.3
19.9 0.2
2.0
14.9 0.2
0.5
1.0
3.2 0.2
5.0 0.3
Unit: mm
4.8 0.2
1.6
2.0
1.4 Max
18.0 0.5
2.8
1.0 0.2
3.6
5.45 0.5
0.6 0.2
0.9
1.0
5.45 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
Conforms
5.0 g
2SK1056, 2SK1057, 2SK1058

Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
Good frequency characteristic

High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058

Outline
TO-3P
D
1
3
1. Gate
2. Source
(Flange)
3. Drain
Absolute Maximum Ratings (Ta = 25C)

Item
Drain to source voltage
2SK1056
Symbol
Ratings
Unit
VDSX
120
2SK1057
140
2SK1058
160
Gate to source voltage
VGSS
15
Drain current
ID
Body to drain diode reverse drain current
I DR
Channel dissipation
Pch*
100
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Note:
1. Value at TC = 25C
2SK1056, 2SK1057, 2SK1058

Item
Symbol Min
Drain to source
2SK1056 V(BR)DSX
120
breakdown voltage
2SK1057
140
2SK1058
160
Typ
Max
Unit
Test conditions
I D = 10 mA, VGS = 10 V
Gate to source breakdown

voltage
V(BR)GSS
15
I G = 100 A, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.15
1.45
I D = 100 mA, VDS = 10 V
Drain to source saturation

voltage
VDS(sat)
12
I D = 7 A, VGD = 0 *1
Forward transfer admittance
|yfs|
0.7
1.0
1.4
I D = 3 A, VDS = 10 V *1
Input capacitance
Ciss
600
pF
VGS = 5 V, VDS = 10 V,
Output capacitance
Coss
350
pF
f = 1 MHz
Reverse transfer capacitance
Crss
10
pF
Turn-on time
t on
180
ns
Turn-off time
t off
60
ns
Note:
VDD = 20 V, ID = 4 A,
1. Pulse test
2SK1056, 2SK1057, 2SK1058

Maximum Safe Operation Area
Power vs. Temperature Derating

20
Ta = 25C
100
tio
ra
pe
(T C
)
C
25
50
ID max (Continuous)
P PW
5
PW W = = 1
10 0 m
=
0 s
1
m 1
s
s sh
1
2
1 ot
sh
sh
ot
ot
1.0
O
10
C
D
0.5
2SK1056
0
50
100
Case Temperature TC (C)
0.2
5
150
Typical Output Characteristics

1.0
TC = 25C
7
6
5
4
Pch =
100 W
VDS = 10 V
C=
0.8
VGS = 10 V
9
8
500
10
20
50 100 200
Typical Transfer Characteristics
10
2SK1057
2SK1058
2
5C
25
75
Channel Dissipation Pch (W)
150
0.6
0.4
0.2
2
1
0
10
20
40
50
30
0.4
0.8
1.6
2.0
1.2
2SK1056, 2SK1057, 2SK1058

Drain to Source Voltage vs.
Drain to Source Saturation

Voltage vs. Drain Current
VGD = 0
25
75
10
TC
25
Drain to Source Saturation Voltage

VDS (on) (V)
10
2
1.0
0.5
0.2
0.1
0.1
0.2
0.5 1.0
2
6
5A
4
10
Input Capacitance vs. Gate

Source Voltage
500
200
VDS = 10 V
f = 1 MHz
100
0
2
4
6
8
10
2A
ID = 1 A
6
2
4
8
10
Forward Transfer Admittance

vs. Frequency
Forward Transfer Admittance yfs (S)
Input Capacitance Ciss (pF)
1000
TC = 25C
3.0
1.0
0.3
0.1
0.03
0.01
0.003
10 k
TC = 25C
VDS = 10 V
ID = 2 A
30 k 100 k 300 k 1 M 3 M
Frequency f (Hz)
10 M
2SK1056, 2SK1057, 2SK1058

Switching Time vs. Drain Current
Switching Time ton,toff (ns)
500
t on
200
100
50
t off
20
10
5
0.1
0.2
0.5 1.0
2
10
Switching Time Test Circuit

Output
RL= 2
Input
PW = 50s
duty ratio
=1%
20 V
50
Waveforms
90 %
Input
10 %
t on
t off
10 %
Output
90 %
15.6 0.3
1.5
0.3
19.9 0.2
2.0
14.9 0.2
0.5
1.0
3.2 0.2
5.0 0.3
Unit: mm
4.8 0.2
1.6
2.0
1.4 Max
18.0 0.5
2.8
1.0 0.2
3.6
5.45 0.5
0.6 0.2
0.9
1.0
5.45 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
Conforms
5.0 g
2SA970
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970
Low Noise Audio Amplifier Applications
Unit: mm
Low noise : NF = 3dB (typ.) RG = 100 , VCE = 6 V, IC = 100 A,

f = 1 kHz
: NF = 0.5dB (typ.) RG = 1 k, VCE = 6 V, IC = 100 A,
f = 1 kHz
High DC current gain: hFE = 200~700
High breakdown voltage: VCEO = 120 V
Low pulse noise. Low 1/f noise
Maximum Ratings (Ta = 25C)

Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
Collector-emitter voltage
VCEO
-120
Emitter-base voltage
VEBO
-5
Collector current
IC
-100
mA
Base current
IB
-20
mA
JEDEC
TO-92
Collector power dissipation
PC
300
mW
JEITA
SC-43
Junction temperature
Tj
125
TOSHIBA
2-5F1B
Tstg
-55~125
Weight: 0.21 g (typ.)
Storage temperature range

Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -120 V, IE = 0
-0.1
mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
mA
V (BR) CEO
IC = -1 mA, IB = 0
-120
VCE = -6 V, IC = -2 mA
200
700
VCE (sat)
IC = -10 mA, IB = -1 mA
-0.3
Base-emitter voltage
VBE
VCE = -6 V, IC = -2 mA
0.65
Transition frequency
fT
VCE = -6 V, IC = -1 mA
100
MHz
VCB = -10 V, IE = 0, f = 1 MHz
4.0
pF
VCE = -6 V, IC = -0.1 mA, f = 10 Hz,

RG = 10 kW
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,

RG = 10 kW
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,

RG = 100 W
Collector-emitter breakdown voltage
hFE
DC current gain
(Note)
Collector-emitter saturation voltage
Collector output capacitance
Noise figure
Note: hFE classification
Cob
NF
dB
GR: 200~400, BL: 350~700
2003-03-24
2SA970
2003-03-24
2SA970
2003-03-24

Order this document

by MJE340/D
SEMICONDUCTOR TECHNICAL DATA

0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
300 VOLTS
20 WATTS
. . . useful for highvoltage general purpose applications.

Suitable for Transformerless, LineOperated Equipment
Thermopad Construction Provides High Power Dissipation Rating for High
Reliability
CASE 7708
TO225AA TYPE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
VEB
3.0
Vdc
Collector Current Continuous
IC
500
mAdc
Total Power Dissipation @ TC = 25_C

Derate above 25_C
PD
20
0.16
Watts
W/_C
TJ, Tstg
65 to + 150
_C
Symbol
Max
Unit
JC
6.25
_C/W
CollectorEmitter Voltage
EmitterBase Voltage
Operating and Storage Junction

Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
300
Vdc
Collector Cutoff Current

(VCB = 300 Vdc, IE = 0)
ICBO
100
Adc
Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)
IEBO
100
Adc
hFE
30
240
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage

(IC = 1.0 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
REV 7
Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data
MJE340
32
1.0
PD, POWER DISSIPATION (WATTS)
28
TJ = 25C
0.8
V, VOLTAGE (VOLTS)
24
20
16
12
VBE @ VCE = 10 V
0.6
0.4
VCE(sat) @ IC/IB = 10
MJE340
8.0
0.2
4.0
0
VBE(sat) @ IC/IB = 10
IC/IB = 5.0
20
40
80
60
100
120
0
10
160
140
20
TC, CASE TEMPERATURE (C)
30
50
100
200
IC, COLLECTOR CURRENT (mA)
300
500
Figure 2. On Voltages
Figure 1. Power Temperature Derating
ACTIVEREGION SAFE OPERATING AREA
IC, COLLECTOR CURRENT (AMP)
1.0
10 s
0.5
0.3
500 s
TJ = 150C
dc
0.2
1.0 ms
0.1
0.05
SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT
THERMAL LIMIT TC = 25C
SINGLE PULSE
0.03
0.02
0.01
10
50
70 100
200
20
30
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
300
Figure 3. MJE340
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided T J(pk)
150_C. At high case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by second breakdown.
300
hFE , DC CURRENT GAIN
200
VCE = 10 V
VCE = 2.0 V
TJ = 150C
100
70
+100C
50
+ 25C
30
20
10
55C
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
70
100
200
300
500
Figure 4. DC Current Gain

2
MJE340
PACKAGE DIMENSIONS
B
U
Q
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
V
G
S
R
0.25 (0.010)
D 2 PL
0.25 (0.010)
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 7708
TO225AA TYPE
ISSUE V
ON Semiconductor
MJE350
Plastic Medium Power PNP

Silicon Transistor
. . . designed for use in lineoperated applications such as low
power, lineoperated series pass and switching regulators requiring
PNP capability.
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS
20 WATTS
High CollectorEmitter Sustaining Voltage
VCEO(sus) = 300 Vdc @ IC

= 1.0 mAdc
Excellent DC Current Gain
hFE = 30240 @ IC
= 50 mAdc
Plastic Thermopad Package
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
3 2
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vdc
VEB
3.0
Vdc
IC
500
mAdc
Total Power Dissipation @ TC = 25C

Derate above 25C
PD
20
0.16
Watts
W/C
TJ, Tstg
65 to +150
C
Symbol
Max
Unit
JC
6.25
C/W
CollectorEmitter Voltage
EmitterBase Voltage
Operating and Storage Junction Temperature

Range
CASE 7709
TO225AA TYPE
Characteristic
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
300
Vdc

(VCB = 300 Vdc, IE = 0)
ICBO
100
Adc

(VEB = 3.0 Vdc, IC = 0)
IEBO
100
Adc
hFE
30
240
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage

(IC = 1.0 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 12
Publication Order Number:

MJE350/D
MJE350
100
1.0
TJ = 150C
TJ = 25C
0.8
25C
V, VOLTAGE (VOLTS)
200
70
50
-55C
30
20
VCE = 2.0 V
VCC = 10 V
10
5.0 7.0 10
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
IC/IB = 10
0.2
VCE(sat)
200
20 30
50 70 100
300
500
5.0 7.0
10
1000
700
500
300
100s
dc
200
100
70
50
30
20
10
20
20 30
50 70 100
200 300
500
Figure 2. On Voltages
1.0ms
500s
TJ = 150C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25C
SECOND BREAKDOWN LIMITED
V, TEMPERATURE COEFFICIENTS (mV/C)
IC/IB = 5.0
50
100
200
30
70
300 400
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
+1.2
+0.8
*APPLIES FOR IC/IB < hFE/4
+0.4
0
*VC for VCE(sat)
-0.4
-0.8
+100C to +150C
+25C to +100C
-55C to +25C
+25C to +150C
-1.2
-1.6
VB for VBE
-2.0
-55C to +25C
-2.4
-2.8
5.0 7.0
Figure 3. ActiveRegion Safe Operating Area
10
20 30
50 70 100
200 300
500
Figure 4. Temperature Coefficients
20
PD, POWER DISSIPATION (WATTS)
There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T J(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
16
12
8.0
4.0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (C)
Figure 5. Power Derating
http://onsemi.com
2
140
160
MJE350
PACKAGE DIMENSIONS
TO225
CASE 7709
ISSUE W
B
U
Q
A
NOTES:
Y14.5M, 1982.
C
M
1 2 3
V
G
S
R
0.25 (0.010)
D 2 PL
0.25 (0.010)
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
http://onsemi.com
3
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---

Order this document

by MPSA42/D

NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MPSA42
MPSA43
Unit
Collector Emitter Voltage
VCEO
300
200
Vdc
Collector Base Voltage
VCBO
300
200
Vdc
Emitter Base Voltage
VEBO
6.0
6.0
CASE 2911, STYLE 1

TO92 (TO226AA)
Vdc
IC
500
mAdc
Total Device Dissipation @ TA = 25C

Derate above 25C
PD
625
5.0
mW
mW/C
Total Device Dissipation @ TC = 25C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
C/mW
RqJC
83.3
C/mW
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic
Symbol
Min
Max
300
200
300
200
6.0
0.1
0.1
0.1
0.1
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPSA42
MPSA43
V(BR)CBO
MPSA42
MPSA43
Emitter Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)
V(BR)EBO

(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
MPSA42
MPSA43

(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MPSA42
MPSA43
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Vdc
Vdc
Vdc
Adc
ICBO
Adc
IEBO
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1998

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
25
40
40
0.5
0.4
VBE(sat)
0.9
Vdc
fT
50
MHz
3.0
4.0
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
Collector Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
hFE
VCE(sat)
MPSA42
MPSA43
BaseEmitter Saturation Voltage

Vdc
SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
CollectorBase Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
MPSA42
MPSA43
pF

120
VCE = 10 Vdc
TJ = +125C
100
80
25C
60
40
55C
20
0
0.1
1.0
10
100
100
f T, CURRENTGAIN BANDWIDTH (MHz)
80
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
70
60
50
40
30
TJ = 25C
VCE = 20 V
f = 20 MHz
20
10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
Figure 3. CurrentGain Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25C, IC/IB = 10

VBE(sat) @ 25C, IC/IB = 10
1.0
0.8

VBE(on) @ 25C, VCE = 10 V
VBE(on) @ 125C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
100
Figure 4. ON Voltages

PACKAGE DIMENSIONS
NOTES:
Y14.5M, 1982.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
X X
G
H
V
C
SECTION XX
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
0.250
0.080
0.105
0.100
0.115
0.135
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
6.35
2.04
2.66
2.54
2.93
3.43
CASE 02911
(TO226AA)
ISSUE AJ
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals
must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 13036752140 or 18004412447
JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141,

4321 NishiGotanda, Shinagawaku, Tokyo, Japan. 81354878488
Customer Focus Center: 18005216274

Mfax: RMFAX0@email.sps.mot.com TOUCHTONE 16022446609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Motorola Fax Back System
US & Canada ONLY 18007741848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298
http://sps.motorola.com/mfax/
HOME PAGE: http://motorola.com/sps/
MPSA42/D
Motorola SmallSignal Transistors, FETs and Diodes Device
Data

Order this document

by MPSA92/D

PNP Silicon
COLLECTOR
3
*Motorola Preferred Device
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
MPSA92
MPSA93
Unit
Collector Emitter Voltage
VCEO
300
200
Vdc
Collector Base Voltage
VCBO
300
200
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Total Device Dissipation @ TA = 25C

Derate above 25C
PD
625
5.0
mW
mW/C
Total Device Dissipation @ TC = 25C

Derate above 25C
PD
1.5
12
Watts
mW/C
TJ, Tstg
55 to +150
Symbol
Max
Unit

Temperature Range
CASE 2911, STYLE 1

TO92 (TO226AA)
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
C/W
RqJC
83.3
C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic
Symbol
Min
Max
300
200
300
200
5.0
0.25
0.25
0.1
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CEO
MPSA92
MPSA93
V(BR)CBO
MPSA92
MPSA93
Emitter Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
V(BR)EBO
Vdc
IEBO
Vdc
Adc
ICBO
MPSA92
MPSA93

(VEB = 3.0 Vdc, IC = 0)
Vdc
Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1

Motorola, Inc. 1998

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
Both Types
Both Types
25
40
MPSA92
MPSA93
25
25
0.5
0.4
VBE(sat)
0.9
Vdc
fT
50
MHz
6.0
8.0
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
Collector Emitter Saturation Voltage
hFE
VCE(sat)
MPSA92
MPSA93
BaseEmitter Saturation Voltage

Vdc
SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
CollectorBase Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
MPSA92
MPSA93
pF

300
VCE = 10 Vdc
TJ = +125C
250
200
25C
150
55C
100
50
0
0.1
1.0
10
100
f T, CURRENTGAIN BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Cib @ 1MHz
10
Ccb @ 1MHz
1.0
0.1
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
150
130
110
90
70
50
TJ = 25C
VCE = 20 Vdc
F = 20 MHz
30
10
1
11
13
15
7
9
17
19
21
Figure 3. CurrentGain Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2

1.0
0.8

VBE(on) @ 125C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
100
Figure 4. ON Voltages

PACKAGE DIMENSIONS
NOTES:
Y14.5M, 1982.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
X X
G
H
V
C
SECTION XX
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
0.250
0.080
0.105
0.100
0.115
0.135
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
6.35
2.04
2.66
2.54
2.93
3.43
CASE 02911
(TO226AA)
ISSUE AJ
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals
must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 13036752140 or 18004412447
JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141,

4321 NishiGotanda, Shinagawaku, Tokyo, Japan. 81354878488
Customer Focus Center: 18005216274

Mfax: RMFAX0@email.sps.mot.com TOUCHTONE 16022446609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Motorola Fax Back System
US & Canada ONLY 18007741848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298
http://sps.motorola.com/mfax/
HOME PAGE: http://motorola.com/sps/
MPSA92/D
Motorola SmallSignal Transistors, FETs and Diodes Device
Data

RAS300

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RAS 300 Power Amplifier

372 watt rms

0.0064% @ 1 kHz into 8 Ohms

2Hz to 260 kHz (-3dB)

Note all derivatives are at just before the onset of clipping.

300watt power amp.lsp

300watt power amp.lsp

RAS 300 Driver Board R02

RAS 300 Driver Board R02

RAS350 OUTPUT STAGE

300watt power amp O-P.lsp

300W MOSFET AMP.CIR

300W MOSFET AMP.CIR

Amplitude of V(OUT) vs Frequency

Cumulative Percent Distortion of V(OUT) vs Frequency

Sampled Waveform V(OUT) vs T

300W MOSFET AMP.CIR

2SJ160, 2SJ161, 2SJ162

Good frequency characteristic

2SJ160, 2SJ161, 2SJ162

Absolute Maximum Ratings (Ta = 25C)

Gate to source voltage

Body to drain diode reverse drain current

2SJ160, 2SJ161, 2SJ162

Gate to source breakdown

Gate to source cutoff voltage

I D = 100 mA, VDS = 10 V

Drain to source saturation

Forward transfer admittance

VGS = 5 V, VDS = 10V,

Reverse transfer capacitance

2SJ160, 2SJ161, 2SJ162

Power vs. Temperature Derating

Drain Current ID (A)

Typical Output Characteristics

Typical Transfer Characteristics

Drain Current ID (A)

Channel Dissipation Pch (W)

Drain to Source Saturation Voltage

Input Capacitance vs.

Drain to Source Voltage VDS (V)

Drain to Source Saturation Voltage VDS (sat) (V)

2SJ160, 2SJ161, 2SJ162

Forward Transfer Admittance

2SJ160, 2SJ161, 2SJ162

Switching Time ton, toff (ns)

Switching Time Test Circuit

2SK1056, 2SK1057, 2SK1058

Good frequency characteristic

2SK1056, 2SK1057, 2SK1058

Absolute Maximum Ratings (Ta = 25C)

Gate to source voltage

Body to drain diode reverse drain current

2SK1056, 2SK1057, 2SK1058

Gate to source breakdown

Gate to source cutoff voltage

I D = 100 mA, VDS = 10 V

Drain to source saturation

Forward transfer admittance

Reverse transfer capacitance

2SK1056, 2SK1057, 2SK1058

Power vs. Temperature Derating

Drain Current ID (A)