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A 12-bit linearity binary-weighted all MOS transistor D / a converter is presented. Results demonstrate the feasibility of fabricating with high yield such a converter in a standard CMOS 0.7pm technology. The output drives a doubly terminated 50Q coaxial cable.
A 12-bit linearity binary-weighted all MOS transistor D / a converter is presented. Results demonstrate the feasibility of fabricating with high yield such a converter in a standard CMOS 0.7pm technology. The output drives a doubly terminated 50Q coaxial cable.
A 12-bit linearity binary-weighted all MOS transistor D / a converter is presented. Results demonstrate the feasibility of fabricating with high yield such a converter in a standard CMOS 0.7pm technology. The output drives a doubly terminated 50Q coaxial cable.
Katholieke Universiteit Leuven, ESAT-MICAS Kard. Mercierlaan 94, B-3001 Heverlee, Belgium Abstract A 12-bit linearity binary-weighted all MOS transistor D/A converter is presented. Experimental results demonstrate the feasibility of fabricating with high yield such a converter in a standard CMOS 0.7pm technology. The output drives a doubly terminated 50Q coaxial cable. The full scale 10-90% rise/fall time is 4 ns. The active chip area is lmm2. Introduction Recent interest in using digital signal processing in such fields as wireless personal communications and video signal processing has created a demand for fast D/A converters with accuracy higher than 10 bits. The accuracy of D/A converters that rely on static mirrors is limited by the achievable transistor matching in a given technology. In CMOS VLSI technologies the maximum accuracy is typically 10 bits [ 11- 121. In this paper we present a 12 bit linearity 250MS/s all MOS transistor D/A converter, which demonstrates the feasibility of fabricating with high yield such a converter in a CMOS 0.7pm digital standard technology. Chip Architecture In order to achieve high speed current steering is the preferred architecture. Current steering D/A converters are based on current cells which are binary weighted, or monotonic decoded unit cells. The two architectures trade a reduction in layout area and complexity for increased differential non linearity (DNL) and glitch energy. Independent of the architecture, the most important static specification, the integral non linearity (I NL) has the same difficulty requirement. As our most important goal is to achieve 12 bit integral linearity, we have chosen a binary weighted architecture because it has minimum layout area and it offers considerable advantages in eliminating systematic errors introduced by process gradients. A block diagram of the DAC architecture is shown in Fig. 1. Design for Linearity A. Random Errors Due to the matching fluctuation of the current sources, the INL specification varies randomly in a set of several DACs realized in the same process technology. Hence it is of primary importance to establish the circuit yield as a function of the matching accuracy in the current sources. Theoretical yield estimations are found in the literature [3]-[4]. However, a correct yield estimation can only be obtained by Monte-Carlo simulations. The result of such a simulation is shown in graphical form in Fig. 2. We can see that, with a unit current source relative standard deviation (oyl) of 0.3%, we can guarantee a 99% yield. This result allows to estimate the minimum channel area of the unit current source. The relative standard deviation of matching between two unit current sources as function of the bias point and the channel dimensions is approximately given by [5] CT 2 ( AV, ) =- AVT WL The parameters AVT and AD are technology constants previously extracted for the 0.7pm CMOS technology, and are shown in Table I [6]. Defining a bias point of V,,=Z.OV, a minimum channel area of the unit current source is obtained. This value is (WL),,,=50pm2. This is the first and most important constraint of the design. A second constraint arrives from the total drain current specification Ztotal of ZOmA, for a 0.5V voltage output over a 25Q load. This constraint imposes a maximum W/L ratio 20.6.1 0-7803-3177-6 $5.00 0 1996 IEEE 431 IEEE 1996 CUSTOM INTEGRATED CIRCUITS CONFERENCE of U12.5. The unit current source transistor has thus channel dimensions W/L=2/25 p d p m. B. Systematic Errors The unit current source finite output impedance and the voltage drop along the ground line can introduce significant linearity errors [7]. Due to the large L of the unit current source, the output resistance of the cascode configuration of the unit current source and the current switch transistor is sufficiently high. Maximum resistance for the column ground lines and the backbone ground line is not exceeded. Parameter gradients over the die can represent the limiting accuracy obtainable for large dies. For this reason, the distance influence on matching has been studied for the applied technology. Table I shows the process parameters SVT and Sp which model the matching degradation with distance for the threshold voltage and the current factor. Although the wafer gradients introduce a deterministic matching error, we do not know the position of the die in the wafer, which means that the parameter gradient can have any direction in the die. This problem has been tackled in the linear architecture by introducing a special wiring method or switching sequence [ 11-[2], which increases the wiring complexity and silicon area. We have defined an algorithm, which builds the binary weighted current sources by connecting the outputs of centroid distributed unit current sources over the array area. In this way all the two dimensional systematic error sources whose period is a rational fraction of the array length, do not contribute to the degradation of the integral linearity. Fig. 3 shows this distribution for the four most significant bits. Layout A straightforward approach to the layout of a matrix with 4096 unit current sources spends a considerable amount of layout area. For this technology, if we route 12 bit lines in a 64x64 square matrix, the total area occupied by the routing is 2.4mm2, roughly 10 times more area than the gate area of the transistors! A straightforward layout is thus not acceptable. The solution is to reduce the array size and to route less bit lines. We define a 16x16 matrix of new unit current sources, each having a value of 16 old unit current sources, for the 8 most significant bits. The channel dimensions of the current source are now 32/25 ,um/pm, and the routing of the 8 bit lines is done over the transistor. In this approach no silicon area is used in the routing, and a most compact layout for the array is obtained. The four least significant bits are constructed by connecting in series the necessary number of new unit current sources. These current sources are layed out around the array, and also serve to provide identical surroundings to all the array elements, thus avoiding micro loading effects. The layout of the unit current source is shown in Fig. 4. The sources are connected by the vertical running metal 1, over the gate, and thus occupies no extra area. The drains are connected to the corresponding bit line (running parallel in metal 2), also over the gate. The complete layout of the unit current source array occupies only650x650pm2. Design for Speed The conventional D/A has three main dynamic error sources: imperfect synchronization of the inputs, digital signal feedthrough, and current variation due to drain voltage variation of the current sources. The transistors used in the differential switches have the same (minimum) length but a width proportional to the current they are switching. For the most significant bits, the width is very large, and thus their gate and drain capacitance are also large, and significant delays are introduced. To synchronize the inputs a 4-stage tapered driver stage with a size factor of 2 has been used to buffer the bit lines. Charge feedthrough of digital input signals to the output can, due to the large gate-drain capacitance of the MSBs, also affects negatively the settling time. This source of error is significantly reduced by using cascode switches. The cross point of rising/falling waveforms in the input drivers is also very important. In a symmetrical switching circuit the cross point is too low and there is a significant voltage swing at the drain of the current sources. We use an input driver scheme which combines the advantages of decreased gate voltage swing and delayed switching. The scheme is shown in Fig. 5 In this circuit, the cross coupled NMOS transistors work as delay elements, so that the on-off transition is slightly delayed. The delay can be fine tuned by changing the voltage V, at the source of the transistors. Changing the voltage V, has the extra advantage that, by decreasing the voltage swing at the gates of the switching transistors, there is less digital signal feedthrough. Measurement Results Figure 6 shows a microphotograph of the DAC. The active area occupied by the circuit is lmm2. The INL error measured in 30 out of 30 functionally working samples is less than 112LSB. It can be stated that the design yield is greater than 90%, at a 95% confidence level. Figure 7 shows a typical integral linearity plot. The average INL is 0.39 LSB. In most of the cases, the maximum INL occurs at half the scale, and coincides with the DNL at the MSB transition, as expected. This fact demonstrates that the centroid layout has successfully minimized the effect of the die gradients. Figure 8 shows a full scale positive and negative output step (50Q doubly terminated coaxial cable, 20pF load). The rise/fall time is less than 4ns. The dies have been bonded to a 28pin DIP. The bond wire inductance is the remaining source 20.6.2 432 of error, causing the extra ringing at the output for a full scale voltage swing. Conclusion A 12 bit linearity current steering CMOS DIA converter capable of video speed has been presented. Taking advantage of the matching properties of a modem CMOS 0.7pm technology and using a very compact layout, a design yield greater than 90% is obtained. Acknowledgment J. Bastos is supported by a grant from the Portuguese National Research Board (J NICT). References [I ] Y . Nakamura et al., "A IO-bit 70MS/s CMOS D/A Converter", IEEE J . Solid-State Circuits, vol. 26, pp. 637-642, April 1991. [2] T. Wu, C. J ih, J . Chen, C. Wu, "A Low Glitch 10-hit 75-MHz CMOS Video D/A Converter", IEEE J . Solid-State Circuits, vol. 30, pp. 68-72, 16- 14- 12- 10 8 - 6 - 4 - 2- 0 ~~ J anuary 1995. [3] K. Lakshmikumar, R. Hadaway, and M. Copeland, "Characterization and Modeling of Mismatch in MOS Transistors for Precision Analog Design", IEEE J. Solid-State Circuits, vol. SC-21, no. 6, pp. 1057-1066, 0 X + X 0 X X % X ?$C 0 X + Y 0 X * O Y + X O Y x X O X + * O + X 0 X 0 X + f + K 0 Y 0 X + X X + * O * * o x o x * o x + 0 x x o x + * + * o x t o * x o x o x o * x * x x o x o * o - x o x x x o x o Y x x o * x X x x + * + x o x o * + * + x x x o x x x o * o x x x o * x x x x + * + x o x o x + x + x x 0 Y x 0 * + * + * 0 x * o x * o x o x o x x * x x o * o * o + Y 0 x 0 x + x + x 0 x 0 Y + x Y O * + % + * o x 0 x + x 0 x x Y x x 0 x + x 0 x x o * + * o * Y * o x + x o * O * O Y 2 4 6 8 10 12 14 16 December 1986. [4] K. Lakshmikumar, M. Copeland, and R. Hadaway, "Reply to 'A Comment on 'Characterization and Modeling of Mismatch in MOS Transistors for Precision Analog Design'", IEEE J . Solid-state Circuits, vol. 23, pp. 296, February 1988. [5] M. Pelgrom, A. Duinmaijer, and A. WelbersMatching Properties of MOS Transistors", IEEE J . Solid-state Circuits, vol. SC-24, pp. 294- .~ 296, February 1988. [6] J . Bastos et al., "Matching of MOS Transistors with Different Layout Stvles", IEEE International Conference on Microelectronic Test Structures, Trento, 1996, in press. State Circuits, vol. SC-21, pp. 983-988, December 1986. [7] T. Miki et al., "An 80 MHz 8-bit CMOS D/A Converter", IEEE J . Solid- Table I Mismatch Parameters -channel unit 0.4 m V/ m m 0.2 0.3 %/mm Table I1 Characteristics of the DAC Resolution 12 bit Differential Nonlinearity <OS LSB Integral Nonlinearity <O.SLSB Conversion Rate 250MSIs RiseFall Time (1 0-90%) <4ns F.S. Output Current 20mA Supply Voltage 3.3v Process 0.7pm CMOS Chip Size (without pads) 1 mm2 100 40 20 Bits, ( Fig. 4. Unit current source layout. 20.6.3 433 0.3 t b lout ldump I I I I 0 500 1000 1500 2000 2500 3000 3500 4000 4500 -0.5' Fig. 5. Basic current cell. m r i m - 1-_1 Fig. 7. DAC integral linearity plot (typical) Fig 8 Full scale output transitions Fig 6 Die microphotograph lx l x Fig. 1. DAC architecture. 20.6.4 434