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Absolute Maximum Ratings

Parameter Units
I
D
@ V
GS
= 10V, T
C
= 25C Continuous Drain Current 38
I
D
@ V
GS
= 10V, T
C
= 100C Continuous Drain Current 24
I
DM
Pulsed Drain Current 152
P
D
@ T
C
= 25C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/C
V
GS
Gate-to-Source Voltage 20 V
E
AS
Single Pulse Avalanche Energy 150 mJ
I
AR
Avalanche Current 38 A
E
AR
Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
PD - 90337G
o
C
A
08/21/01
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Product Summary
Part Number BVDSS RDS(on) ID
IRF150 100V 0.055 38A
For footnotes refer to the last page
REPETITIVE AVALANCHE AND dv/dt RATED IRF150
HEXFET

TRANSISTORS JANTX2N6764
THRU-HOLE (TO-204AA/AE) JANTXV2N6764
[REF:MIL-PRF-19500/543]
The HEXFET

technology is the key to International


Rectifiers advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
State of the Art design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
TO-3
100V, N-CHANNEL
IRF150
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Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Junction to Case 0.83
R
thJA
Junction to Ambient 30 Typical socket mount
C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
S
Continuous Source Current (Body Diode) 38
I
SM
Pulse Source Current (Body Diode) 152
V
SD
Diode Forward Voltage 1.9 V Tj = 25C, I
S
=38A, V
GS
= 0V
t
rr
Reverse Recovery Time 500 nS Tj = 25C, I
F
= 38A, di/dt 100A/s
Q
RR
Reverse Recovery Charge 2.9 c V
DD
30V
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 100 V V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/T
J
Temperature Coefficient of Breakdown 0.13 V/C Reference to 25C, I
D
= 1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State 0.055 V
GS
= 10V, I
D
=24A
Resistance 0.065 V
GS
=10V, I
D
=38A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
=250A
g
fs
Forward Transconductance 9.0 S ( ) V
DS
> 15V, I
DS
=24A
I
DSS
Zero Gate Voltage Drain Current 25 V
DS
=80V, V
GS
=0V
250 V
DS
=80V
V
GS
= 0V, T
J
= 125C
I
GSS
Gate-to-Source Leakage Forward 100 V
GS
=20V
I
GSS
Gate-to-Source Leakage Reverse -100 V
GS
=-20V
Q
g
Total Gate Charge 50 125 V
GS
=10V, ID
=
38A
Q
gs
Gate-to-Source Charge 8.0 22 nC V
DS
=50V
Q
gd
Gate-to-Drain (Miller) Charge 25 65
t
d(on)
Turn-On Delay Time 35 V
DD
=50V, I
D
=38A,
t
r
Rise Time 190 V
GS
=10V,R
G
=2.35
t
d(off)
Turn-Off Delay Time 170
t
f
Fall Time 130
L
S +
L
D
Total Inductance 6.1
C
iss
Input Capacitance 3700 V
GS
= 0V, V
DS
=25V
C
oss
Output Capacitance 1100 pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance 200
nA

nH
ns
A

Measured from the center of
drain pad to center of source
pad
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IRF150
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF150
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13 a& b
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IRF150
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
GS
IRF150
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3F
50K
.2F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01 t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
.
V
GS
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IRF150
Foot Notes:
I
SD
38A, di/dt 300A/s,
V
DD
100V, T
J
150C
Suggested RG =2.35
Repetitive Rating; Pulse width limited by
maximum junction temperature.
V
DD
=50V, starting T
J
= 25C,
Peak I
L
= 38A, V
GS
=10V Pulse width 300 s; Duty Cycle 2%
Case Outline and Dimensions TO-204AE (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01