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Parameter Units
I
D
@ V
GS
= 10V, T
C
= 25C Continuous Drain Current 38
I
D
@ V
GS
= 10V, T
C
= 100C Continuous Drain Current 24
I
DM
Pulsed Drain Current 152
P
D
@ T
C
= 25C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/C
V
GS
Gate-to-Source Voltage 20 V
E
AS
Single Pulse Avalanche Energy 150 mJ
I
AR
Avalanche Current 38 A
E
AR
Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
PD - 90337G
o
C
A
08/21/01
www.irf.com 1
Product Summary
Part Number BVDSS RDS(on) ID
IRF150 100V 0.055 38A
For footnotes refer to the last page
REPETITIVE AVALANCHE AND dv/dt RATED IRF150
HEXFET
TRANSISTORS JANTX2N6764
THRU-HOLE (TO-204AA/AE) JANTXV2N6764
[REF:MIL-PRF-19500/543]
The HEXFET